小鼠双尾C蛋白Bicc1多克隆抗体的制备及细胞内定位的初步研究

目的:制备小鼠双尾C蛋白Bicc1的多克隆抗体并确定其在细胞内定位.方法:根据生物信息学分析结果, PCR扩增小鼠Bicc1编码61E-199A的cDNA片段.将该片段克隆到GST融合蛋白表达载体上, 在IPTG诱导下产生Bicc1-N抗原.纯化目的蛋白并制备兔抗Bicc1蛋白多克隆抗体.Western blot鉴定抗体特异性, 并以间接免疫荧光法初步分析该蛋白在细胞内定位.结果:成功构建Bicc1-N片段原核表达载体, 在大肠杆菌中实现可溶性表达, 制备小鼠Bicc1蛋白的多克隆抗体, 并证实该蛋白主要表达于细胞质内.结论:成功制备了高效价并特异的兔抗Bicc1多克隆抗体, 为进一步研究Bicc1基因产物的生物功能奠定了基础.

云南大山包越冬黑颈鹤迁徙路线的卫星跟踪

2005年2月26日和3月1日在云南省昭通大山包黑颈鹤国家级自然保护区,分别为4只越冬黑颈鹤佩戴卫星信号发射器(PTTs),跟踪研究其迁徙路线和迁徙停歇地.2005年春季迁徙中,有2只跟踪黑颈鹤到达繁殖地,其中1只黑颈鹤在2005年11月和2006年3月分别完成从繁殖地返回越冬地和从越冬地再次到达繁殖地的迁徙过程.2只春季迁徙黑颈鹤的迁徙路线大致相同--沿着长江上游金沙江、大渡河一直向北到达黄河上游白河及黑河沿岸若尔盖湿地内.春季迁徙过程中,途中停歇3-4次,总迁徙距离是674-713 km,迁徙全程所用时间3-4天.秋季迁徙全程所用时间8天.在4个PTTs工作期间,共确定有13个黑颈鹤迁徙停歇地,其中11个停歇地在河流滩地;其他2个停歇地在高山湖泊附近.总体上,黑颈鹤一般选择海拔在1 900 m以上湖泊、河流等湿地内,距离耕地较近且人、畜干扰较少的栖息地停歇.

Prefrontal white matter abnormalities in young adult with major depressive disorder: A diffusion tensor imaging study

Prefrontal impairments have been hypothesized to be most strongly associated with the cognitive and emotional dysfunction in depression. Recently, white matter microstructural abnormalities in prefrontal lobe have been reported in elderly patients with ma

Identification of triosephosphate isomerase (TIM) genes from Microcystis (Cyanobacteria : Chroococcales) and theoretical analyses of the potential of cyanobacterial TIM as a target for designing specific inhibitors

The genes encoding triosephosphate isomerase (TIM) in three species of Microcystis (M. aeruginosa, M. viridis and M. wesenbergii) were investigated. Reverse transcriptase-polymerase chain reaction indicated that they were transcribed in the cells. Analyses showed that their DNA and deduced amino acid sequences were highly conserved between all the three species, only a single nonsynonymous substitution was seen at position 31, from an Asp in M. aeruginosa and M. viridis to Glu in M. wesenbergii. Sequence alignment of these with 12 other known cyanobacterial TIM sequences showed that all the cyanobacterial TIMs had a very high level of amino acid identity (over 50% between each two). Comparison of the cyanobacterial TIMs with other reported TIMs (from diverse lineages of the three Domains) showed that they possessed common active-site residues and sequence motifs. All cyanobacterial TIMs have two common cysteine residues (Cys127 and Cys176), and the Cys176 is almost cyanobacteria-specific with only one exception in Streptomyces coelicolor. Both secondary structure alignment and comparative modelling of Synechocystis sp. TIM showed that Cys176 was located at the hinge region of the flexible loop-6 and might therefore be critical to the movement of TIM's loop-6, which is important to the function of the enzyme. Thus, the cyanobacterial TIM-specific Cys176 may be a potential site for the discovery of suitable drugs against cyanobacteria, and such drugs may have utility in controlling water blooms due to cyanobacteria.

Triosephosphate isomerase genes in two trophic modes of euglenoids (Euglenophyceae) and their phylogenetic analysis

Two different length cDNAs encoding triosephosphate isomerase (TIM) were identified in the two trophic modes of euglenoids, the phototrophic Euglena gracilis and Euglena intermedia and the saprotrophic Astasia longa. Sequence analyses and presequence pred

Magnetic anisotropy of BaM ferrites

Using the point charge model with weak field scheme, a calculation of the single ion anisotropy of Fe3+ ionsn at all crystal sites in BaFe12O19 was made by perturbation theory. The results show that in addition to the 2b site, all other sites have non-negligible contributions. © 1983.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.