997 resultados para POLYCRYSTALLINE FILM

Turn-on characteristics of polycrystalline silicon TFT's - impact of hydrogenation and channel length

Relevância:

20.00% 20.00%

Publicador:

Veja mais

The simulation of switching in polycrystalline ferroelectric ceramics

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Thin film deformation behavior of power-law creeping materials

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Aerodynamic aspects of endwall film-cooling

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Aerodynamic aspects of endwall film cooling

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Tetrahedrally bonded amorphous carbon (ta-C) thin film transistors

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Filtered cathodic vacuum arc (FCVA) deposition of thin film silicon

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Distribution of film cooling effectiveness on a turbine endwall measured using the ammonia and Diazo technique

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Distribution of film cooling effectiveness on a turbine endwall measured using the ammonia and diazo technique

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Properties of carbon ion deposited tetrahedral amorphous carbon film's as a function of ion energy

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Investigation of novel high voltage polycrystalline silicon TFTs

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Activated hydrogen effects on the electrical stability of a-Si:H thin-film transistors

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Thermally stimulated defect removal in hydrogenated amorphous silicon thin film transistors

Relevância:

20.00% 20.00%

Publicador:

Veja mais

The role of the gate insulator in the defect pool model for hydrogenated amorphous silicon thin film transistor characteristics

Relevância:

20.00% 20.00%

Publicador:

Veja mais

Posthydrogenation of low-pressure chemical-vapor-deposited amorphous silicon using a novel internal lamp system and its application to thin-film transistor fabrication

Relevância:

20.00% 20.00%

Publicador:

Veja mais