950 resultados para Laser Scanning Confocal Fluorescence Microscopy (LSCFM)


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La corrosión bajo tensiones (SCC) es un problema de gran importancia en las aleaciones de aluminio de máxima resistencia (serie Al-Zn-Mg-Cu). La utilización de tratamientos térmicos sobremadurados, en particular el T73, ha conseguido prácticamente eliminar la susceptibilidad a corrosión bajo tensiones en dichas aleaciones pero a costa de reducir su resistencia mecánica. Desde entonces se ha tratado de optimizar simultáneamente ambos comportamientos, encontrándose para ello diversos inconvenientes entre los que destacan: la dificultad de medir experimentalmente el crecimiento de grieta por SCC, y el desconocimiento de las causas y el mecanismo por el cual se produce la SCC. Los objetivos de esta Tesis son mejorar el sistema de medición de grietas y profundizar en el conocimiento de la SCC, con el fin de obtener tratamientos térmicos que aúnen un óptimo comportamiento tanto en SCC como mecánico en las aleaciones de aluminio de máxima resistencia utilizadas en aeronáutica. Para conseguir los objetivos anteriormente descritos se han realizado unos cuarenta tratamientos térmicos diferentes, de los cuales la gran mayoría son nuevos, para profundizar en el conocimiento de la influencia de la microestructura (fundamentalmente, de los precipitados coherentes) en el comportamiento de las aleaciones Al-Zn-Mg-Cu, y estudiar la viabilidad de nuevos tratamientos apoyados en el conocimiento adquirido. Con el fin de obtener unos resultados aplicables a productos o semiproductos de aplicación aeronáutica, los tratamientos térmicos se han realizado a trozos grandes de una plancha de 30 mm de espesor de la aleación de aluminio 7475, muy utilizada en las estructuras aeronáuticas. Asimismo con el objeto de conseguir una mayor fiabilidad de los resultados obtenidos se han utilizado, normalmente, tres probetas de cada tratamiento para los diferentes ensayos realizados. Para la caracterización de dichos tratamientos se han utilizado diversas técnicas: medida de dureza y conductividad eléctrica, ensayos de tracción, calorimetría diferencial de barrido (DSC), metalografía, fractografía, microscopia electrónica de transmisión (MET) y de barrido (MEB), y ensayos de crecimiento de grieta en probeta DCB, que a su vez han permitido hacer una estimación del comportamiento en tenacidad del material. Las principales conclusiones del estudio realizado se pueden resumir en las siguientes: Se han diseñado y desarrollado nuevos métodos de medición de grieta basados en el empleo de la técnica de ultrasonidos, que permiten medir el crecimiento de grieta por corrosión bajo tensiones con la precisión y fiabilidad necesarias para valorar adecuadamente la susceptibilidad a corrosión bajo tensiones. La mejora de medida de la posición del frente de grieta ha dado lugar, entre otras cosas, a la definición de un nuevo ensayo a iniciación en probetas preagrietadas. Asimismo, se ha deducido una nueva ecuación que permite calcular el factor de intensidad de tensiones existente en punta de grieta en probetas DCB teniendo en cuenta la influencia de la desviación del plano de crecimiento de la grieta del plano medio de la probeta. Este aspecto ha sido determinante para poder explicar los resultados experimentales obtenidos ya que el crecimiento de la grieta por un plano paralelo al plano medio de la probeta DCB pero alejado de él reduce notablemente el factor de intensidades de tensiones que actúa en punta de grieta y modifica las condiciones reales del ensayo. Por otro lado, se han identificado los diferentes constituyentes de la microestructura de precipitación de todos los tratamientos térmicos estudiados y, en especial, se ha conseguido constatar (mediante MET y DSC) la existencia de zonas de Guinier-Preston del tipo GP(II) en la microestructura de numerosos tratamientos térmicos (no descrita en la bibliografía para las aleaciones del tipo de la estudiada) lo que ha permitido establecer una nueva interpretación de la evolución de la microestructura en los diferentes tratamientos. Al hilo de lo anterior, se han definido nuevas secuencias de precipitación para este tipo de aleaciones, que han permitido entender mejor la constitución de la microestructura y su relación con las propiedades en los diferentes tratamientos térmicos estudiados. De igual manera, se ha explicado el papel de los diferentes microconstituyentes en diversas propiedades mecánicas (propiedades a tracción, dureza y tenacidad KIa); en particular, el estudio realizado de la relación de la microestructura con la tenacidad KIa es inédito. Por otra parte, se ha correlacionado el comportamiento en corrosión bajo tensiones, tanto en la etapa de incubación de grieta como en la de propagación, con las características medidas de los diferentes constituyentes microestructurales de los tratamientos térmicos ensayados, tanto de interior como de límite de grano, habiéndose obtenido que la microestructura de interior de grano tiene una mayor influencia en el comportamiento en corrosión bajo tensiones que la de límite de grano. De forma especial, se ha establecido la importancia capital, y muy negativa, de la presencia en la microestructura de zonas de Guinier-Preston en el crecimiento de la grieta por corrosión bajo tensiones. Finalmente, como consecuencia de todo lo anterior, se ha propuesto un nuevo mecanismo por el que se produce la corrosión bajo tensiones en este tipo de aleaciones de aluminio, y que de forma muy resumida se puede concretar lo siguiente: la acumulación de hidrógeno (formado, básicamente, por un proceso corrosivo de disolución anódica) delante de la zonas GP (en especial, de las zonas GP(I)) próximas a la zona libre de precipitados que se desarrolla alrededor del límite de grano provoca enfragilización local y causa el rápido crecimiento de grieta característico de algunos tratamientos térmicos de este tipo de aleaciones. ABSTRACT The stress corrosion cracking (SCC) is a major problem in the aluminum alloys of high resistance (series Al-Zn-Mg-Cu). The use of overaged heat treatments, particularly T73 has achieved virtually eliminate the susceptibility to stress corrosion cracking in such alloys but at the expense of reducing its mechanical strength. Since then we have tried to simultaneously optimize both behaviors, several drawbacks found for it among them: the difficulty of measuring experimentally the SCC crack growth, and ignorance of the causes and the mechanism by which SCC occurs. The objectives of this thesis are to improve the measurement system of cracks and deeper understanding of the SCC, in order to obtain heat treatments that combine optimum performance in both SCC and maximum mechanical strength in aluminum alloys used in aerospace To achieve the above objectives have been made about forty different heat treatments, of which the vast majority are new, to deepen the understanding of the influence of microstructure (mainly of coherent precipitates) in the behavior of the alloys Al -Zn-Mg-Cu, and study the feasibility of new treatments supported by the knowledge gained. To obtain results for products or semi-finished aircraft application, heat treatments were performed at a large pieces plate 30 mm thick aluminum alloy 7475, widely used in aeronautical structures. Also in order to achieve greater reliability of the results obtained have been used, normally, three specimens of each treatment for various tests. For the characterization of these treatments have been used several techniques: measurement of hardness and electrical conductivity, tensile testing, differential scanning calorimetry (DSC), metallography, fractography, transmission (TEM) and scanning (SEM) electron microscopy, and crack growth tests on DCB specimen, which in turn have allowed to estimate the behavior of the material in fracture toughness. The main conclusions of the study can be summarized as follows: We have designed and developed new methods for measuring crack based on the use of the ultrasound technique, for measuring the growth of stress corrosion cracks with the accuracy and reliability needed to adequately assess the susceptibility to stress corrosion. Improved position measurement of the crack front has resulted, among other things, the definition of a new initiation essay in pre cracked specimens. Also, it has been inferred a new equation to calculate the stress intensity factor in crack tip existing in DCB specimens considering the influence of the deviation of the plane of the crack growth of the medium plane of the specimen. This has been crucial to explain the experimental results obtained since the crack growth by a plane parallel to the medium plane of the DCB specimen but away from it greatly reduces the stress intensity factor acting on the crack tip and modifies the actual conditions of the essay. Furthermore, we have identified the various constituents of the precipitation microstructure of all heat treatments studied and, in particular note has been achieved (by TEM and DSC) the existence of the type GP (II) of Guinier-Preston zones in the microstructure of several heat treatments (not described in the literature for alloys of the type studied) making it possible to establish a new interpretation of the evolution of the microstructure in the different treatments. In line with the above, we have defined new precipitation sequences for these alloys, which have allowed a better understanding of the formation of the microstructure in relation to the properties of different heat treatments studied. Similarly, explained the role of different microconstituents in various mechanical properties (tensile properties, hardness and toughness KIa), in particular, the study of the relationship between the tenacity KIa microstructure is unpublished. Moreover, has been correlated to the stress corrosion behavior, both in the incubation step as the crack propagation, with the measured characteristics of the various microstructural constituents heat treatments tested, both interior and boundary grain, having obtained the internal microstructure of grain has a greater influence on the stress corrosion cracking behavior in the grain boundary. In a special way, has established the importance, and very negative, the presence in the microstructure of Guinier-Preston zones in crack growth by stress corrosion. Finally, following the above, we have proposed a new mechanism by which stress corrosion cracking occurs in this type of aluminum alloy, and, very briefly, one can specify the following: the accumulation of hydrogen (formed basically by a corrosive process of anodic dissolution) in front of the GP zones (especially the GP (I) zones) near the precipitates free zone that develops around grain boundary causes local embrittlement which characterizes rapid crack growth of some heat treatments such alloys.

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A new version of the TomoRebuild data reduction software package is presented, for the reconstruction of scanning transmission ion microscopy tomography (STIMT) and particle induced X-ray emission tomography (PIXET) images. First, we present a state of the art of the reconstruction codes available for ion beam microtomography. The algorithm proposed here brings several advantages. It is a portable, multi-platform code, designed in C++ with well-separated classes for easier use and evolution. Data reduction is separated in different steps and the intermediate results may be checked if necessary. Although no additional graphic library or numerical tool is required to run the program as a command line, a user friendly interface was designed in Java, as an ImageJ plugin. All experimental and reconstruction parameters may be entered either through this plugin or directly in text format files. A simple standard format is proposed for the input of experimental data. Optional graphic applications using the ROOT interface may be used separately to display and fit energy spectra. Regarding the reconstruction process, the filtered backprojection (FBP) algorithm, already present in the previous version of the code, was optimized so that it is about 10 times as fast. In addition, Maximum Likelihood Expectation Maximization (MLEM) and its accelerated version Ordered Subsets Expectation Maximization (OSEM) algorithms were implemented. A detailed user guide in English is available. A reconstruction example of experimental data from a biological sample is given. It shows the capability of the code to reduce noise in the sinograms and to deal with incomplete data, which puts a new perspective on tomography using low number of projections or limited angle.

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A phosphorus diffusion gettering model is used to examine the efficacy of a standard gettering process on interstitial and precipitated iron in multicrystalline silicon. The model predicts a large concentration of precipitated iron remaining after standard gettering for most as-grown iron distributions. Although changes in the precipitated iron distribution are predicted to be small, the simulated post-processing interstitial iron concentration is predicted to depend strongly on the as-grown distribution of precipitates, indicating that precipitates must be considered as internal sources of contamination during processing. To inform and validate the model, the iron distributions before and after a standard phosphorus diffusion step are studied in samples from the bottom, middle, and top of an intentionally Fe-contaminated laboratory ingot. A census of iron-silicide precipitates taken by synchrotron-based X-ray fluorescence microscopy confirms the presence of a high density of iron-silicide precipitates both before and after phosphorus diffusion. A comparable precipitated iron distribution was measured in a sister wafer after hydrogenation during a firing step. The similar distributions of precipitated iron seen after each step in the solar cell process confirm that the effect of standard gettering on precipitated iron is strongly limited as predicted by simulation. Good agreement between the experimental and simulated data supports the hypothesis that gettering kinetics is governed by not only the total iron concentration but also by the distribution of precipitated iron. Finally, future directions based on the modeling are suggested for the improvement of effective minority carrier lifetime in multicrystalline silicon solar cells.

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En los últimos años, las sociedades industrializadas han tomado una mayor conciencia sobre el problema que suponen las emisiones indiscriminadas de gases de efecto invernadero a la atmósfera. El hormigón, cuyo principal componente es el cemento, es probablemente el material más utilizado en construcción. En la actualidad, las emisiones globales de CO2 debidas a la combustión del CaCO3 del cemento Pórtland representan entre el 5% y el 10% respecto del total. Estos valores son de gran interés si se considera que el compromiso aceptado al firmar el Protocolo de Kioto es de una reducción del 5% antes del año 2020, sobre el total de gases producidos. El principal objetivo del presente trabajo es el estudio microestructural y de los procesos de hidratación de los cementos con adiciones. Para ello se propone contribuir a la investigación sobre nuevos productos cementicios basados en micropartículas esféricas vítreas que pueden adicionarse al cemento antes del proceso de amasado. Los resultados obtenidos se han contrastado con las adiciones convencionales de más uso en la actualidad. El nuevo material basa su composición en la química del aluminio y el silicio. Al disminuir la cantidad de CaCO3, se contribuye al desarrollo sostenible y a la reducción de emisiones de CO2. La patente creada por el Grupo Cementos Pórtland Valderrivas (GCPV), describe el proceso de producción de las cemesferas (WO 2009/007470, 2010). Los productos que forman la materia prima para la elaboración de las cemesferas son arcillas, calizas, margas o productos o subproductos industriales, que tras su molienda, son fundidos mediante un fluido gaseoso a elevada temperatura (entre 1250ºC y 1600ºC). Este proceso permite obtener un producto final en forma esférica maciza o microesfera, que tras estabilizarse mediante un enfriamiento rápido, consigue una alta vitrificación idónea para su reactividad química, con una mínima superficie específica en relación a su masa. El producto final obtenido presenta prácticamente la finura requerida y no precisa ser molido, lo que reduce las emisiones de CO2 por el ahorro de combustible durante el proceso de molienda. El proceso descrito permite obtener un amplio abanico de materiales cementantes que, no solo pueden dar respuesta a los problemas generados por las emisiones de CO2, sino también a la disponibilidad de materiales en países donde hasta el momento no se puede fabricar cemento debido a la falta de calizas. Complementariamente se ha optimizado el método de cálculo del grado de hidratación a partir de los resultados del ensayo de ATD-TG en base a los modelos de cálculo de Bhatty y Pane. El método propuesto permite interpretar el comportamiento futuro del material a partir de la interpolación numérica de la cantidad de agua químicamente enlazada. La evolución del grado de hidratación tiene una relación directa con el desarrollo de la resistencia mecánica del material. Con el fin de caracterizar los materiales de base cemento, se ha llevado a cabo una amplia campaña experimental en pasta de cemento, mortero y hormigón. La investigación abarca tres niveles: caracterización microestructural, macroestructural y caracterización del comportamiento a largo plazo, fundamentalmente durabilidad. En total se han evaluado ocho adiciones diferentes: cuatro adiciones convencionales y cuatro tipos de cemesferas con diferente composición química. Los ensayos a escala microscópica comprenden la caracterización química, granulométrica y de la superficie específica BET de los materiales anhidros, análisis térmico diferencial y termogravimétrico en pasta de cemento y mortero, resonancia magnética de silicio en pasta de cemento, difracción de rayos X de los materiales anhidros y de las probetas de pasta, microscopía electrónica de barrido con analizador de energía dispersiva por rayos X en pasta y mortero, y porosimetría por intrusión de mercurio en mortero. La caracterización macroscópica del material comprende ensayos de determinación del agua de consistencia normal y de los tiempos de inicio y fin de fraguado en pasta de cemento, ensayos de resistencia mecánica a flexión y compresión en probetas prismáticas de mortero, y ensayos de resistencia a compresión en probetas de hormigón. Para caracterizar la durabilidad se han desarrollado ensayos de determinación del coeficiente de migración de cloruros y ensayos de resistividad eléctrica en probetas de mortero. Todos los ensayos enumerados permiten clarificar el comportamiento de las cemesferas y compararlo con las distintas adiciones de uso convencional. Los resultados reflejan un buen comportamiento resistente y durable de los materiales con adición de cemesferas. La caracterización microscópica refleja su relación con las propiedades mesoscópicas y permite comprender mejor la evolución en los procesos de hidratación de las cemesferas. In recent years industrialised societies have become increasingly aware of the problem posed by indiscriminate emission of greenhouse gases into the atmosphere. Concrete, with a main component being cement, is arguably the most widely used construction material. At present, global emissions of CO2 due to the combustion of CaCO3 from Portland cement represent between 5% and 10% of the total. If the requirement of the Kyoto Protocol of a reduction of 5% of the total gas produced before 2020 is considered, then such values are of significant interest. The main objective of this work is the assessment of the microstructure and the hydration processes of cements with additions. Such an examination proposes research into new cementitious products based on vitreous spherical microparticles that may be added to the cement before the mixing process. The results are compared with the most commonly used conventional additions. The new material bases its composition on the chemistry of aluminium and silicates. By decreasing the amount of CaCO3, it is possible both to contribute to sustainable development and reduce CO2 emissions. The patent created by Grupo Cementos Portland Valderrivas (GCPV) describes the production process of microspheres (WO 2009/007470, 2010). The products that form the raw material for manufacture are clays, lime-stone, marl and industrial products or by-products that melt after being ground and fed into a gaseous fluid at high temperatures (1250°C and 1600°C). This process allows the obtaining of a product with a solid-spherical or micro-spherical shape and which, after being stabilised in a solid state by rapid cooling, obtains a high vitrification suitable for chemical reactivity, having a minimal surface in relation to its mass. Given that the final product has the fineness required, it prevents grinding that reduces CO2 emissions by saving fuel during this process. The process, which allows a wide range of cementitious materials to be obtained, not only addresses the problems caused by CO2 emissions but also enhances the availability of materials in countries that until the time of writing have not produced cement due to a lack of limestone. In addition, the calculation of the degree of hydration from the test results of DTA-TG is optimised and based on Bhatty and Pane calculation models. The proposed method allows prediction of the performance of the material from numerical interpolation of the amount of chemically bound water. The degree of hydration has a direct relationship with the development of material mechanical strength. In order to characterise the cement-based materials, an extensive experimental campaign in cement paste, concrete and mortar is conducted. The research comprises three levels: micro-structural characterisation, macro-structural and long-term behaviour (mainly durability). In total, eight additions are assessed: four conventional additions and four types of microspheres with different chemical compositions. The micro-scale tests include characterisation of chemical composition, particle size distribution and the BET specific surface area of anhydrous material, differential thermal and thermogravimetric analysis in cement paste and mortar, silicon-29 nuclear magnetic resonance in cement paste, X-ray diffraction of the anhydrous materials and paste specimens, scanning of electron microscopy with energy dispersive X-ray analyser in cement paste and mortar, and mercury intrusion porosimetry in mortar. The macroscopic material characterisation entails determination of water demand for normal consistency, and initial and final setting times of cement paste, flexural and compressive mechanical strength tests in prismatic mortar specimens, and compressive strength tests in concrete specimens. Tests for determining the chloride migration coefficient are performed to characterise durability, together with electrical resistivity tests in mortar specimens. All the tests listed allow clarification of the behaviour of the microspheres and comparison with the various additions of conventional use. The results show good resistance and durable behaviour of materials with a microsphere addition. Microscopic characterisation reflects their relationship with mesoscopic properties and provides insights into the hydration processes of the microspheres.

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Geographic information technologies (GIT) are essential to many fields of research, such as the preservation and dissemination of cultural heritage buildings, a category which includes traditional underground wine cellars. This article presents a methodology based on research carried out on this type of rural heritage building. The data were acquired using the following sensors: EDM, total station, close-range photogrammetry and laser scanning, and subsequently processed with a specific software which was verified for each case, in order to obtain a satisfactory graphic representation of these underground wine cellars. Two key aspects of this work are the accuracy of the data processing and the visualization of these traditional constructions. The methodology includes an application for geovisualizing these traditional constructions on mobile devices in order to contribute to raising awareness of this unique heritage.

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El objetivo de este trabajo es un estudio profundo del crecimiento selectivo de nanoestructuras de InGaN por epitaxia de haces moleculares asistido por plasma, concentrandose en el potencial de estas estructuras como bloques constituyentes en LEDs de nueva generación. Varias aproximaciones al problema son discutidas; desde estructuras axiales InGaN/GaN, a estructuras core-shell, o nanoestructuras crecidas en sustratos con orientaciones menos convencionales (semi polar y no polar). La primera sección revisa los aspectos básicos del crecimiento auto-ensamblado de nanocolumnas de GaN en sustratos de Si(111). Su morfología y propiedades ópticas son comparadas con las de capas compactas de GaN sobre Si(111). En el caso de las columnas auto-ensambladas de InGaN sobre Si(111), se presentan resultados sobre el efecto de la temperatura de crecimiento en la incorporación de In. Por último, se discute la inclusión de nanodiscos de InGaN en las nanocolumnas de GaN. La segunda sección revisa los mecanismos básicos del crecimiento ordenado de nanoestructuras basadas en GaN, sobre templates de GaN/zafiro. Aumentando la relación III/V localmente, se observan cambios morfológicos; desde islas piramidales, a nanocolumnas de GaN terminadas en planos semipolares, y finalmente, a nanocolumnas finalizadas en planos c polares. Al crecer nanodiscos de InGaN insertados en las nanocolumnas de GaN, las diferentes morfologias mencionadas dan lugar a diferentes propiedades ópticas de los nanodiscos, debido al diferente carácter (semi polar o polar) de los planos cristalinos involucrados. La tercera sección recoge experimentos acerca de los efectos que la temperatura de crecimiento y la razón In/Ga tienen en la morfología y emisión de nanocolumnas ordenadas de InGaN crecidas sobre templates GaN/zafiro. En el rango de temperaturas entre 650 y 750 C, la incorporacion de In puede modificarse bien por la temperatura de crecimiento, o por la razón In/Ga. Controlar estos factores permite la optimización de la longitud de onda de emisión de las nanocolumnas de InGaN. En el caso particular de la generación de luz blanca, se han seguidos dos aproximaciones. En la primera, se obtiene emisión amarilla-blanca a temperatura ambiente de nanoestructuras donde la región de InGaN consiste en un gradiente de composiciones de In, que se ha obtenido a partir de un gradiente de temperatura durante el crecimiento. En la segunda, el apilamiento de segmentos emitiendo en azul, verde y rojo, consiguiendo la integración monolítica de estas estructuras en cada una de las nanocolumnas individuales, da lugar a emisores ordenados con un amplio espectro de emisión. En esta última aproximación, la forma espectral puede controlarse con la longitud (duración del crecimiento) de cada uno de los segmentos de InGaN. Más adelante, se presenta el crecimiento ordenado, por epitaxia de haces moleculares, de arrays de nanocolumnas que son diodos InGaN/GaN cada una de ellas, emitiendo en azul (441 nm), verde (502 nm) y amarillo (568 nm). La zona activa del dispositivo consiste en una sección de InGaN, de composición constante nominalmente y longitud entre 250 y 500 nm, y libre de defectos extendidos en contraste con capas compactas de InGaN de similares composiciones y espesores. Los espectros de electroluminiscencia muestran un muy pequeño desplazamiento al azul al aumentar la corriente inyectada (desplazamiento casi inexistente en el caso del dispositivo amarillo), y emisiones ligeramente más anchas que en el caso del estado del arte en pozos cuánticos de InGaN. A continuación, se presenta y discute el crecimiento ordenado de nanocolumnas de In(Ga)N/GaN en sustratos de Si(111). Nanocolumnas ordenadas emitiendo desde el ultravioleta (3.2 eV) al infrarrojo (0.78 eV) se crecieron sobre sustratos de Si(111) utilizando una capa compacta (“buffer”) de GaN. La morfología y eficiencia de emisión de las nanocolumnas emitiendo en el rango espectral verde pueden ser mejoradas ajustando las relaciones In/Ga y III/N, y una eficiencia cuántica interna del 30% se deriva de las medidas de fotoluminiscencia en nanocolumnas optimizadas. En la siguiente sección de este trabajo se presenta en detalle el mecanismo tras el crecimiento ordenado de nanocolumnas de InGaN/GaN emitiendo en el verde, y sus propiedades ópticas. Nanocolumnas de InGaN/GaN con secciones largas de InGaN (330-830 nm) se crecieron tanto en sustratos GaN/zafiro como GaN/Si(111). Se encuentra que la morfología y la distribución espacial del In dentro de las nanocolumnas dependen de las relaciones III/N e In/Ga locales en el frente de crecimiento de las nanocolumnas. La dispersión en el contenido de In entre diferentes nanocolumnas dentro de la misma muestra es despreciable, como indica las casi identicas formas espectrales de la catodoluminiscencia de una sola nanocolumna y del conjunto de ellas. Para las nanocolumnas de InGaN/GaN crecidas sobre GaN/Si(111) y emitiendo en el rango espectral verde, la eficiencia cuántica interna aumenta hasta el 30% al disminuir la temperatura de crecimiento y aumentar el nitrógeno activo. Este comportamiento se debe probablemente a la formación de estados altamente localizados, como indica la particular evolución de la energía de fotoluminiscencia con la temperatura (ausencia de “s-shape”) en muestras con una alta eficiencia cuántica interna. Por otro lado, no se ha encontrado la misma dependencia entre condiciones de crecimiento y efiencia cuántica interna en las nanoestructuras InGaN/GaN crecidas en GaN/zafiro, donde la máxima eficiencia encontrada ha sido de 3.7%. Como alternativa a las nanoestructuras axiales de InGaN/GaN, la sección 4 presenta resultados sobre el crecimiento y caracterización de estructuras core-shell de InGaN/GaN, re-crecidas sobre arrays de micropilares de GaN fabricados por ataque de un template GaN/zafiro (aproximación top-down). El crecimiento de InGaN/GaN es conformal, con componentes axiales y radiales en el crecimiento, que dan lugar a la estructuras core-shell con claras facetas hexagonales. El crecimiento radial (shell) se ve confirmado por medidas de catodoluminiscencia con resolución espacial efectuadas en un microscopio electrónico de barrido, asi como por medidas de microscopía de transmisión de electrones. Más adelante, el crecimiento de micro-pilares core-shell de InGaN se realizó en pilares GaN (cores) crecidos selectivamente por epitaxia de metal-orgánicos en fase vapor. Con el crecimiento de InGaN se forman estructuras core-shell con emisión alrededor de 3 eV. Medidas de catodoluminiscencia resuelta espacialmente indican un aumento en el contenido de indio del shell en dirección a la parte superior del pilar, que se manifiesta en un desplazamiento de la emisión de 3.2 eV en la parte inferior, a 3.0 eV en la parte superior del shell. Este desplazamiento está relacionado con variaciones locales de la razón III/V en las facetas laterales. Finalmente, se demuestra la fabricación de una estructura pin basada en estos pilares core-shell. Medidas de electroluminiscencia resuelta espacialmente, realizadas en pilares individuales, confirman que la electroluminiscencia proveniente del shell de InGaN (diodo lateral) está alrededor de 3.0 eV, mientras que la emisión desde la parte superior del pilar (diodo axial) está alrededor de 2.3 eV. Para finalizar, se presentan resultados sobre el crecimiento ordenado de GaN, con y sin inserciones de InGaN, en templates semi polares (GaN(11-22)/zafiro) y no polares (GaN(11-20)/zafiro). Tras el crecimiento ordenado, gran parte de los defectos presentes en los templates originales se ven reducidos, manifestándose en una gran mejora de las propiedades ópticas. En el caso de crecimiento selectivo sobre templates con orientación GaN(11-22), no polar, la formación de nanoestructuras con una particular morfología (baja relación entre crecimiento perpedicular frente a paralelo al plano) permite, a partir de la coalescencia de estas nanoestructuras, la fabricación de pseudo-templates no polares de GaN de alta calidad. ABSTRACT The aim of this work is to gain insight into the selective area growth of InGaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. Several nanocolumn-based approaches such as standard axial InGaN/GaN structures, InGaN/GaN core-shell structures, or InGaN/GaN nanostructures grown on semi- and non-polar substrates are discussed. The first section reviews the basics of the self-assembled growth of GaN nanocolumns on Si(111). Morphology differences and optical properties are compared to those of GaN layer grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanocolumns grown on Si(111) is described. The second section reviews the basic growth mechanisms of selectively grown GaNbased nanostructures on c-plane GaN/sapphire templates. By increasing the local III/V ratio morphological changes from pyramidal islands, to GaN nanocolumns with top semi-polar planes, and further to GaN nanocolumns with top polar c-planes are observed. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semipolar and polar nature of the crystal planes involved. The third section reports on the effect of the growth temperature and In/Ga ratio on the morphology and light emission characteristics of ordered InGaN nanocolumns grown on c-plane GaN/sapphire templates. Within the growth temperature range of 650 to 750oC the In incorporation can be modified either by the growth temperature, or the In/Ga ratio. Control of these factors allows the optimization of the InGaN nanocolumns light emission wavelength. In order to achieve white light emission two approaches are used. First yellow-white light emission can be obtained at room temperature from nanostructures where the InGaN region is composition-graded by using temperature gradients during growth. In a second approach the stacking of red, green and blue emitting segments was used to achieve the monolithic integration of these structures in one single InGaN nanocolumn leading to ordered broad spectrum emitters. With this approach, the spectral shape can be controlled by changing the thickness of the respective InGaN segments. Furthermore the growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells. Next the selective area growth of In(Ga)N/GaN nanocolumns on Si(111) substrates is discussed. Ordered In(Ga)N/GaN nanocolumns emitting from ultraviolet (3.2 eV) to infrared (0.78 eV) were then grown on top of GaN-buffered Si substrates. The morphology and the emission efficiency of the In(Ga)N/GaN nanocolumns emitting in the green could be substantially improved by tuning the In/Ga and total III/N ratios, where an estimated internal quantum efficiency of 30 % was derived from photoluminescence data. In the next section, this work presents a study on the selective area growth mechanisms of green-emitting InGaN/GaN nanocolumns and their optical properties. InGaN/GaN nanocolumns with long InGaN sections (330-830nm) were grown on GaN/sapphire and GaN-buffered Si(111). The nanocolumn’s morphology and spatial indium distribution is found to depend on the local group (III)/N and In/Ga ratios at the nanocolumn’s top. A negligible spread of the average indium incorporation among different nanostructures is found as indicated by similar shapes of the cathodoluminescence spectra taken from single nanocolumns and ensembles of nanocolumns. For InGaN/GaN nanocolumns grown on GaN-buffered Si(111), all emitting in the green spectral range, the internal quantum efficiency increases up to 30% when decreasing growth temperature and increasing active nitrogen. This behavior is likely due to the formation of highly localized states, as indicated by the absence of a complete s-shape behavior of the PL peak position with temperature (up to room temperature) in samples with high internal quantum efficiency. On the other hand, no dependence of the internal quantum efficiency on the growth conditions is found for InGaN/GaN nanostructures grown on GaN/sapphire, where the maximum achieved efficiency is 3.7%. As alternative to axial InGaN/GaN nanostructures, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods etched from a GaN/sapphire template. Growth of InGaN/GaN is conformal, with axial and radial growth components leading to core-shell structures with clear hexagonal facets. The radial InGaN growth (shell) is confirmed by spatially resolved cathodoluminescence performed in a scanning electron microscopy as well as in scanning transmission electron microscopy. Furthermore the growth of InGaN core-shell micro pillars using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template is demonstrated. Upon InGaN overgrowth core-shell structures with emission at around 3.0 eV are formed. With spatially resolved cathodoluminescence, an increasing In content towards the pillar top is found to be present in the InGaN shell, as indicated by a shift of CL peak position from 3.2 eV at the shell bottom to 3.0 eV at the shell top. This shift is related to variations of the local III/V ratio at the side facets. Further, the successful fabrication of a core-shell pin diode structure is demonstrated. Spatially resolved electroluminescence measurements performed on individual micro LEDs, confirm emission from the InGaN shell (lateral diode) at around 3.0 eV, as well as from the pillar top facet (axial diode) at around 2.3 eV. Finally, this work reports on the selective area growth of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the GaN templates is strongly reduced as indicated by TEM and a dramatic improvement of the optical properties. In case of SAG on non-polar (11-22) templates the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of the nanostructures.

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In Bacillus subtilis, parE and parC were shown to be essential genes for the segregation of replicated chromosomes. Disruption of either one of these genes resulted in failure of the nucleoid to segregate. Purified ParE and ParC proteins reconstituted to form topoisomerase IV (topo IV), which was highly proficient for ATP-dependent superhelical DNA relaxation and decatenation of interlocked DNA networks. By immunofluorescence microscopy and by directly visualizing fluorescence by using green fluorescence protein fusions, we determined that ParC is localized at the poles of the bacteria in rapidly growing cultures. The bipolar localization of ParC required functional ParE, suggesting that topo IV activity is required for the localization. ParE was found to be distributed uniformly throughout the cell. On the other hand, fluorescence microscopy showed that the GyrA and GyrB subunits of gyrase were associated with the nucleoid. Our results provide a physiologic distinction between DNA gyrase and topo IV. The subcellular localization of topo IV provides physical evidence that it may be part of the bacterial segregation machinery.

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Neuropeptides are slowly released from a limited pool of secretory vesicles. Despite decades of research, the composition of this pool has remained unknown. Endocrine cell studies support the hypothesis that a population of docked vesicles supports the first minutes of hormone release. However, it has been proposed that mobile cytoplasmic vesicles dominate the releasable neuropeptide pool. Here, to determine the cellular basis of the releasable pool, single green fluorescent protein-labeled secretory vesicles were visualized in neuronal growth cones with the use of an inducible construct or total internal reflection fluorescence microscopy. We report that vesicle movement follows the diffusion equation. Furthermore, rapidly moving secretory vesicles are used more efficiently than stationary vesicles near the plasma membrane to support stimulated release. Thus, randomly moving cytoplasmic vesicles participate in the first minutes of neuropeptide release. Importantly, the preferential recruitment of diffusing cytoplasmic secretory vesicles contributes to the characteristic slow kinetics and limited extent of sustained neuropeptide release.

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The leucine-rich nuclear export signal (NES) is used by a variety of proteins to facilitate their delivery from the nucleus to the cytoplasm. One of the best-studied examples, protein kinase inhibitor (PKI), binds to the catalytic subunit of protein kinase A in the nucleus and mediates its rapid export to the cytoplasm. We developed a permeabilized cell assay that reconstitutes nuclear export mediated by PKI, and we used it to characterize the cytosolic factors required for this process. The two-step assay involves an import phase and an export phase, and quantitation is achieved by digital fluorescence microscopy. During the import phase, a fluorescent derivative of streptavidin is imported into the nuclei of digitonin-permeabilized HeLa cells. During the export phase, biotinylated PKI diffuses into the nucleus, binds to fluorescent streptavidin, and mediates export of the complex to the cytoplasm. Nuclear export of the PKI complex is cytosol dependent and can be stimulated by addition of the purified NES receptor, Crm1. HeLa cell cytosol treated with N-ethylmaleimide (NEM) or phenyl-Sepharose to inactivate or deplete Crm1, respectively, is still fully active in the PKI export assay. Significantly, the export activity can be depleted from cytosol by preadsorption with a protein conjugate that contains a functional NES. These data indicate that cytosol contains an export activity that is distinct from Crm1 and is likely to correspond to an NES receptor.

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The human estrogen receptor α (ER α) has been tagged at its amino terminus with the S65T variant of the green fluorescent protein (GFP), allowing subcellular trafficking and localization to be observed in living cells by fluorescence microscopy. The tagged receptor, GFP-ER, is functional as a ligand-dependent transcription factor, responds to both agonist and antagonist ligands, and can associate with the nuclear matrix. Its cellular localization was analyzed in four human breast cancer epithelial cell lines, two ER+ (MCF7 and T47D) and two ER− (MDA-MB-231 and MDA-MB-435A), under a variety of ligand conditions. In all cell lines, GFP-ER is observed only in the nucleus in the absence of ligand. Upon the addition of agonist or antagonist ligand, a dramatic redistribution of GFP-ER from a reticular to punctate pattern occurs within the nucleus. In addition, the full antagonist ICI 182780 alters the nucleocytoplasmic compartmentalization of the receptor and causes partial accumulation in the cytoplasm in a process requiring continued protein synthesis. GFP-ER localization varies between cells, despite being cultured and treated in a similar manner. Analysis of the nuclear fluorescence intensity for variation in its frequency distribution helped establish localization patterns characteristic of cell line and ligand. During the course of this study, localization of GFP-ER to the nucleolar region is observed for ER− but not ER+ human breast cancer epithelial cell lines. Finally, our work provides a visual description of the “unoccupied” and ligand-bound receptor and is discussed in the context of the role of ligand in modulating receptor activity.

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Pseudomonas exotoxin (PE) is a cytotoxin which, after endocytosis, is delivered to the cytosol where it inactivates protein synthesis. Using diaminobenzidine cytochemistry, we found over 94% of internalized PE in transferrin (Tf) -positive endosomes of lymphocytes. When PE translocation was examined in a cell-free assay using purified endocytic vesicles, more than 40% of endosomal 125I-labeled PE was transported after 2 h at 37°C, whereas a toxin inactivated by point mutation in its translocation domain was not translocated. Sorting of endosomes did not allow cell-free PE translocation, whereas active PE transmembrane transport was observed after > 10 min of endocytosis when PE and fluorescent-Tf were localized by confocal immunofluorescence microscopy within a rab5-positive and rab4- and rab7-negative recycling compartment in the pericentriolar region of the cell. Accordingly, when PE delivery to this structure was inhibited using a 20°C endocytosis temperature, subsequent translocation from purified endosomes was impaired. Translocation was also inhibited when endosomes were obtained from cells labeled with PE in the presence of brefeldin A, which caused fusion of translocation-competent recycling endosomes with translocation-incompetent sorting elements. No PE processing was observed in lymphocyte endosomes, the full-sized toxin was translocated and recovered in an enzymatically active form. ATP hydrolysis was found to directly provide the energy required for PE translocation. Inhibitors of endosome acidification (weak bases, protonophores, or bafilomycin A1) when added to the assay did not significantly affect 125I-labeled PE translocation, demonstrating that this transport is independent of the endosome-cytosol pH gradient. Nevertheless, when 125I-labeled PE endocytosis was performed in the presence of one of these molecules, translocation from endosomes was strongly inhibited, indicating that exposure to acidic pH is a prerequisite for PE membrane traversal. When applied during endocytosis, treatments that protect cells against PE intoxication (low temperatures, inhibitors of endosome acidification, and brefeldin A) impaired 125I-labeled PE translocation from purified endosomes. We conclude that PE translocation from a late receptor recycling compartment is implicated in the lymphocyte intoxication procedure.

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The mechanisms responsible for coated pit formation in cells remain unknown, but indirect evidence has argued both for and against a critical role of receptor cytoplasmic domains in the process. If the endocytic motifs of receptors are responsible for recruiting AP2 to the plasma membrane, thereby driving coated pit formation, then the level of constitutively internalized receptors at the membrane would be expected to govern the steady-state level of coated pits in cells. Here we directly test this hypothesis for broad classes of receptors containing three distinct constitutive internalization signals. Chimeric proteins consisting of an integral membrane reporter protein (Tac) coupled to cytoplasmic domains bearing tyrosine-, di-leucine-, or acidic cluster/casein kinase II-based internalization signals were overexpressed to levels that saturated the internalization pathway. Quantitative confocal immunofluorescence microscopy indicated that the number of plasma membrane clathrin-coated pits and the concentration of their structural components were invariant when comparing cells expressing saturating levels of the chimeric receptors to nonexpressing cells or to cells expressing only the Tac reporter lacking cytoplasmic internalization signals. Biochemical analysis showed that the distribution of coat proteins between assembled coated pits and soluble pools was also not altered by receptor overexpression. Finally, the cellular localizations of AP2 and AP1 were similarly unaffected. These results provide a clear indication that receptor endocytic signals do not determine coated pit levels by directly recruiting AP2 molecules. Rather, the findings support a model in which coated pit formation proceeds through recruitment and activation of AP2, likely through a limited number of regulated docking sites that act independently of endocytic signals.

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The Nucleolar Localization Elements (NoLEs) of Xenopus laevis U3 small nucleolar RNA (snoRNA) have been defined. Fluorescein-labeled wild-type U3 snoRNA injected into Xenopus oocyte nuclei localized specifically to nucleoli as shown by fluorescence microscopy. Injection of mutated U3 snoRNA revealed that the 5′ region containing Boxes A and A′, known to be important for rRNA processing, is not essential for nucleolar localization. Nucleolar localization of U3 snoRNA was independent of the presence and nature of the 5′ cap and the terminal stem. In contrast, Boxes C and D, common to the Box C/D snoRNA family, are critical elements for U3 localization. Mutation of the hinge region, Box B, or Box C′ led to reduced U3 nucleolar localization. Results of competition experiments suggested that Boxes C and D act in a cooperative manner. It is proposed that Box B facilitates U3 snoRNA nucleolar localization by the primary NoLEs (Boxes C and D), with the hinge region of U3 subsequently base pairing to the external transcribed spacer of pre-rRNA, thus positioning U3 snoRNA for its roles in rRNA processing.

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The nucleolar localization elements (NoLEs) of U17 small nucleolar RNA (snoRNA), which is essential for rRNA processing and belongs to the box H/ACA snoRNA family, were analyzed by fluorescence microscopy. Injection of mutant U17 transcripts into Xenopus laevis oocyte nuclei revealed that deletion of stems 1, 2, and 4 of U17 snoRNA reduced but did not prevent nucleolar localization. The deletion of stem 3 had no adverse effect. Therefore, the hairpins of the hairpin–hinge–hairpin–tail structure formed by these stems are not absolutely critical for nucleolar localization of U17, nor are sequences within stems 1, 3, and 4, which may tether U17 to the rRNA precursor by base pairing. In contrast, box H and box ACA are major NoLEs; their combined substitution or deletion abolished nucleolar localization of U17 snoRNA. Mutation of just box H or just the box ACA region alone did not fully abolish the nucleolar localization of U17. This indicates that the NoLEs of the box H/ACA snoRNA family function differently from the bipartite NoLEs (conserved boxes C and D) of box C/D snoRNAs, where mutation of either box alone prevents nucleolar localization.