Estudio experimental del Sistema de Albañilería Integral en la construcción de viviendas sismorresistentes. Experimental study of the Integral Masonry System in the construction of earthquake resistant houses

This paper presents the application of the Integral Masonry System (IMS) to the construction of earthquake resistant houses and its experimental study. To verify the security of this new type of building in seismic areas of the third world two prototypes have been tested, one with adobe and the other with hollow brick. In both cases it’s a two-story 6x6x6 m3 house built to scale 1/2. The tests are carried out at the Laboratory of Antiseismic Structures of the Department of Engineering, Pontifical Catholic University of Peru in Lima, in collaboration with the UPM (Technical University of Madrid). This article shows the design process of the prototypes to test, including the sizing of the reinforcements, the characteristics of the tests and the results obtained. These results show that the IMS with adobe or brick remains stable with no significant cracks faced with a severe earthquake, with an estimated acceleration of 1.8 g. Este artículo presenta una aplicación del Sistema de Albañilería Integral (SAI) a la construcción de viviendas sismorresistentes y su estudio experimental. Para verificar su seguridad para su construcción en zonas sísmicas del tercer mundo se han ensayado dos prototipos, uno con adobe, y otro con ladrillo hueco. Se trata de una vivienda de 6x6x6 m3 y dos plantas que se construyen a escala 1/2. Los ensayos se realizaron en el Laboratorio de Estructuras Antisísmicas del Departamento de Ingeniería de la Pontificia Católica Universidad del Perú (PUCP) de Lima en colaboración con la UPM (Universidad Politécnica de Madrid). Este artículo muestra el proceso de diseño de los prototipos a ensayar, incluido el dimensionado de los refuerzos, las características de los ensayos y los resultados obtenidos. Estos resultados muestran que el SAI con adobe o ladrillo permanece estable sin grietas significativas ante un sismo severo, con una aceleración estimada de 1,8 g.

Impact of N2 plasma power and duration on AlGaN/GaN HEMT

urface treatments have been recently shown to play an active role in electrical characteristics in AlGaN/GaN HEMTs, in particular during the passivation processing [1-4]. However, the responsible mechanisms are partially unknown and further studies are demanding. The effects of power and time N2 plasma pre-treatment prior to SiN deposition using PE-CVD (plasma enhanced chemical vapour deposition) on GaN and AlGaN/GaN HEMT have been investigated. The low power (60 W) plasma pre-treatment was found to improve the electronic characteristics in GaN based HEMT devices, independently of the time duration up to 20 min. In contrast, high power (150 and 210 W) plasma pretreatment showed detrimental effects in the electronic properties (Fig. 1), increasing the sheet resistance of the 2DEG, decreasing the 2DEG charge density in AlGaN/GaN HEMTs, transconductance reduction and decreasing the fT and fmax values up to 40% respect to the case using 60 W N2 plasma power. Although AFM (atomic force microscopy) results showed AlGaN and GaN surface roughness is not strongly affected by the N2-plasma, KFM (Kelvin force microscopy) surface analysis shows significant changes in the surface potential, trending to increase its values as the plasma power is higher. The whole results point at energetic ions inducing polarization-charge changes that affect dramatically to the 2-DEG charge density and the final characteristics of the HEMT devices. Therefore, we conclude that AlGaN surface is strongly sensitive to N2 plasma power conditions, which turn to be a key factor to achieve a good surface preparation prior to SiN passivation.