Trench MOS-gated power devices

MOS gated power devices are now available for power switching applications with voltage blocking requirements up to 1 kV and current ratings up to 300A. This is due to the invention of the IGBT, a device in which MOS gate turn-on leads to minority carrier injection to modulate the high resistance drift region required for voltage blocking. The paper presents current technologies being developed in order to expand the applications of MOS gated power devices. Also explained is the available trench gate technology that can be used to fabricate power devices.

Using strong sustainability to optimize electricity generation fuel mixes

This work represents a contribution to the field of sustainable electricity system design by using an optimization tool to specify the final mix composition, subject to the constraints of: emissions that are within the biocapacity of the region; a diverse and robust electricity supply system; and supply that at least meets current demand. The 25-country European Union (EU-25) is used as a case study. All the goals, save diversity, can be met by re-structuring the current fuel mix, thus maintaining current consumption levels. The diversity target is only met when consumption is reduced by 10-15% and the constraint on maximum material throughput is relaxed. Re-structuring the mix and reducing consumption is insufficient to achieve a sustainable EU carbon footprint. However, the solution proposed singlehandedly allows the EU to meet its Kyoto emissions target as well as its 2007 policy of a reduction of 20% in greenhouse gas emissions by 2020. © 2007 Elsevier Ltd. All rights reserved.

Optimum design of 1.4KV trench IGBTs - The next generation of high power switching devices

The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1-4 kV) to HVDC (6.5 kV). Here we present for the first time an optimum design of a 1.4kV Trench IGBT using a new, fully integrated optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4kV Trench IGBTs which are in excellent agreement with the TCAD predictions are reported.

Reducing energy demand: what are the practical limits?

Concern over the global energy system, whether driven by climate change, national security, or fears of shortage, is being discussed widely and in every arena but with a bias toward energy supply options. While demand reduction is often mentioned in passing, it is rarely a priority for implementation, whether through policy or through the search for innovation. This paper aims to draw attention to the opportunity for major reduction in energy demand, by presenting an analysis of how much of current global energy demand could be avoided. Previous work led to a "map" of global energy use that traces the flow of energy from primary sources (fuels or renewable sources), through fuel refinery, electricity generation, and end-use conversion devices, to passive systems and the delivery of final energy services (transport, illumination, and sustenance). The key passive systems are presented here and analyzed through simple engineering models with scalar equations using data based on current global practice. Physically credible options for change to key design parameters are identified and used to predict the energy savings possible for each system. The result demonstrates that 73% of global energy use could be saved by practically achievable design changes to passive systems. This reduction could be increased by further efficiency improvements in conversion devices. A list of the solutions required to achieve these savings is provided.

An extended computational model of the circulatory system for designing ventricular assist devices.

An extended computational model of the circulatory system has been developed to predict blood flow in the presence of ventricular assist devices (VADs). A novel VAD, placed in the descending aorta, intended to offload the left ventricle (LV) and augment renal perfusion is being studied. For this application, a better understanding of the global hemodynamic response of the VAD, in essence an electrically driven pump, and the cardiovascular system is necessary. To meet this need, a model has been established as a nonlinear, lumped-parameter electrical analog, and simulated results under different states [healthy, congestive heart failure (CHF), and postinsertion of VAD] are presented. The systemic circulation is separated into five compartments and the descending aorta is composed of three components to accurately yield the system response of each section before and after the insertion of the VAD. Delays in valve closing time and blood inertia in the aorta were introduced to deliver a more realistic model. Pump governing equations and optimization are based on fundamental theories of turbomachines and can serve as a practical initial design point for rotary blood pumps. The model's results closely mimic established parameters for the circulatory system and confirm the feasibility of the intra-aortic VAD concept. This computational model can be linked with models of the pump motor to provide a valuable tool for innovative VAD design.