Age determination and sedimentology on profile Lz1021

A 9.14 m long sediment sequence was recovered from Lake Fryxell, Taylor Valley, southern Victoria Land, Antarctica, and investigated for its chronology and sedimentological, mineralogical, and biogeochemical changes. The basal part of the sequence is dominated by coarse clastic matter, i.e., mainly sand. The sediment composition suggests that a lake existed in Fryxell basin during the Middle Weichselian by ca. 48,000 cal. year BP. After a short period of lake-level lowstand ca. 43,000 cal. year BP, lower Taylor Valley became occupied by the proglacial Lake Washburn, which was at least partly supplied by meltwater and sediments from the Ross Ice Sheet that was advanced to the mouth of Taylor Valley. Evaporation of Lake Washburn to lower levels started during the Last Glacial Maximum at ca. 22,000 cal. year BP, long before the Ross Ice Sheet retreated significantly. Lake-level lowering was discontinuous with a series of high and low stands. From ca. 4000 cal. year BP environmental conditions were similar to those of today and lower Fryxell basin was occupied by a small lake. This lake evaporated to a saline or hypersaline pond between ca. 2500 and 1000 cal. year BP and refilled subsequently.

Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors

This work looks at the effect on mid-gap interface state defect density estimates for In0.53Ga0.47As semiconductor capacitors when different AC voltage amplitudes are selected for a fixed voltage bias step size (100 mV) during room temperature only electrical characterization. Results are presented for Au/Ni/Al2O3/In0.53Ga0.47As/InP metal–oxide–semiconductor capacitors with (1) n-type and p-type semiconductors, (2) different Al2O3 thicknesses, (3) different In0.53Ga0.47As surface passivation concentrations of ammonium sulphide, and (4) different transfer times to the atomic layer deposition chamber after passivation treatment on the semiconductor surface—thereby demonstrating a cross-section of device characteristics. The authors set out to determine the importance of the AC voltage amplitude selection on the interface state defect density extractions and whether this selection has a combined effect with the oxide capacitance. These capacitors are prototypical of the type of gate oxide material stacks that could form equivalent metal–oxide–semiconductor field-effect transistors beyond the 32 nm technology node. The authors do not attempt to achieve the best scaled equivalent oxide thickness in this work, as our focus is on accurately extracting device properties that will allow the investigation and reduction of interface state defect densities at the high-k/III–V semiconductor interface. The operating voltage for future devices will be reduced, potentially leading to an associated reduction in the AC voltage amplitude, which will force a decrease in the signal-to-noise ratio of electrical responses and could therefore result in less accurate impedance measurements. A concern thus arises regarding the accuracy of the electrical property extractions using such impedance measurements for future devices, particularly in relation to the mid-gap interface state defect density estimated from the conductance method and from the combined high–low frequency capacitance–voltage method. The authors apply a fixed voltage step of 100 mV for all voltage sweep measurements at each AC frequency. Each of these measurements is repeated 15 times for the equidistant AC voltage amplitudes between 10 mV and 150 mV. This provides the desired AC voltage amplitude to step size ratios from 1:10 to 3:2. Our results indicate that, although the selection of the oxide capacitance is important both to the success and accuracy of the extraction method, the mid-gap interface state defect density extractions are not overly sensitive to the AC voltage amplitude employed regardless of what oxide capacitance is used in the extractions, particularly in the range from 50% below the voltage sweep step size to 50% above it. Therefore, the use of larger AC voltage amplitudes in this range to achieve a better signal-to-noise ratio during impedance measurements for future low operating voltage devices will not distort the extracted interface state defect density.

Bulk density, and peat and net carbon accumulation of samples from Selwyn lake, Canada

Peat and net carbon accumulation rates in two sub-arctic peat plateaus of west-central Canada have been studied through geochemical analyses and accelerator mass spectrometry (AMS) radiocarbon dating. The peatland sites started to develop around 6600-5900 cal. yr BP and the peat plateau stages are characterized by Sphagnum fuscum peat alternating with rootlet layers. The long-term peat and net carbon accumulation rates for both profiles are 0.30-0.31 mm/yr and 12.5-12.7 gC/m**2/yr, respectively. These values reflect very slow peat accumulation (0.04-0.09 mm/yr) and net carbon accumulation (3.7-5.2 gC/m**2/yr) in the top rootlet layers. Extensive AMS radiocarbon dating of one profile shows that accumulation rates are variable depending on peat plateau stage. Peat accumulation rates are up to six times higher and net carbon accumulation rates up to four times higher in S. fuscum than in rootlet stages. Local fires represented by charcoal remains in some of the rootlet layers result in very low accumulation rates. High C/N ratios throughout most of the peat profiles suggest low degrees of decomposition due to stable permafrost conditions. Hence, original peat accretion has remained largely unaltered, except in the initial stages of peatland development when permafrost was not yet present.