957 resultados para Directly modulated semiconductor lasers
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Monolithical series connection of silicon thin-film solar cells modules performed by laser scribing plays a very important role in the entire production of these devices. In the current laser process interconnection the two last steps are developed for a configuration of modules where the glass is essential as transparent substrate. In addition, the change of wavelength in the employed laser sources is sometimes enforced due to the nature of the different materials of the multilayer structure which make up the device. The aim of this work is to characterize the laser patterning involved in the monolithic interconnection process in a different configurations of processing than the usually performed with visible laser sources. To carry out this study, we use nanosecond and picosecond laser sources working at 355nm of wavelength in order to achieve the selective ablation of the material from the film side. To assess this selective removal of material has been used EDX (energy dispersive using X-ray) analysis
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X-ray free-electron lasers1,2 delivering up to 131013 coherent photons in femtosecond pulses are bringing about a revolution in X-ray science3?5. However, some plasma-based soft X-ray lasers6 are attractive because they spontaneously emit an even higher number of photons (131015), but these are emitted in incoherent and long (hundreds of picoseconds) pulses7 as a consequence of the amplification of stochastic incoherent self-emission. Previous experimental attempts to seed such amplifiers with coherent femtosecond soft X-rays resulted in as yet unexplained weak amplification of the seed and strong amplification of incoherent spontaneous emission8. Using a time-dependent Maxwell?Bloch model describing the amplification of both coherent and incoherent soft X-rays in plasma, we explain the observed inefficiency and propose a new amplification scheme based on the seeding of stretched high harmonics using a transposition of chirped pulse amplification to soft X-rays. This scheme is able to deliver 531014 fully coherent soft X-ray photons in 200 fs pulses and with a peak power of 20 GW.
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We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimonides, III-V quaternary compounds, III-nitrides) exhibiting such a profile suggests a universal behavior. We show that sigmoidal profiles emerge from a simple model of cooperative growth mediated by twodimensional island formation, wherein cooperative effects are described by a specific functional dependence of the sticking coefficient on the surface coverage. Experimental results confirm that, except in the very early stages, island growth prevails over nucleation as the mechanism governing the interface development and ultimately determines the sigmoidal shape of the chemical profile in these two-dimensional grown layers. In agreement with our experimental findings, the model also predicts a minimum value of the interfacial width, with the minimum attainable value depending on the chemical identity of the species.
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A solar cell is a solid state device that converts the energy of sunlight directly into electricity by the photovoltaic effect. When light with photon energies greater than the band gap is absorbed by a semiconductor material, free electrons and free holes are generated by optical excitation in the material. The main characteristic of a photovoltaic device is the presence of internal electric field able to separate the free electrons and holes so they can pass out of the material to the external circuit before they recombine. Numerical simulation of photovoltaic devices plays a crucial role in their design, performance prediction, and comprehension of the fundamental phenomena ruling their operation. The electrical transport and the optical behavior of the solar cells discussed in this work were studied with the simulation code D-AMPS-1D. This software is an updated version of the one-dimensional (1D) simulation program Analysis of Microelectronic and Photonic Devices (AMPS) that was initially developed at The Penn State University, USA. Structures such as homojunctions, heterojunctions, multijunctions, etc., resulting from stacking layers of different materials can be studied by appropriately selecting characteristic parameters. In this work, examples of cells simulation made with D-AMPS-1D are shown. Particularly, results of Ge photovoltaic devices are presented. The role of the InGaP buffer on the device was studied. Moreover, a comparison of the simulated electrical parameters with experimental results was performed.
Mixing effect on volume growth of Fagus sylvatica and Pinus sylvestris is modulated by stand density
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Despite the increasing relevance of mixed stands due to their potential benefits; little information is available with regard to the effect of mixtures on yield in forest systems. Hence, it is necessary to study inter-specific relationships, and the resulting yield in mixed stands, which may vary with stand development, site or stand density, etc. In Spain, the province of Navarra is considered one of the biodiversity reservoirs; however, mixed forests occupy only a small area, probably as a consequence of management plans, in which there is an excessive focus on the productivity aspect, favoring the presence of pure stands of the most marketable species. The aim of this paper is to study how growth efficiencies of beech (Fagus sylvatica) and pine (Pinus sylvestris) are modified by the admixture of the other species and to determine whether stand density modifies interspecific relationships and to what extent. Two models were fitted from Spanish National Forest Inventory data, for P. sylvestris and F. sylvatica respectively, which relate the growth efficiency of the species, i.e. the volume increment of the species divided by the species proportion by area, with dominant height, quadratic mean diameter, stocking degree, and the species proportions by area of each species. Growth efficiency of pine increased with the admixture of beech, decreasing this positive effect when stocking degree increased. However, the positive effect of pine admixture on beech growth was greater at higher stocking degrees. Growth efficiency of beech was also dependent on stand dominant height, resulting in a net negative mixing effect when stand dominant heights and stocking degrees were simultaneously low. There is a relatively large range of species proportions and stocking degrees which results in transgressive overyielding: higher volume increments in mixed stands than that of the most productive pure pine stands. We concluded that stocking degree is a key factor in between-species interactions, being the effects of mixing not always greater at higher stand densities, but it depends on species composition.
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Due to the particular characteristics of the fusion products, i.e. very short pulses (less than a few μs long for ions when arriving to the walls; less than 1 ns long for X-rays), very high fluences ( 10 13 particles/cm 2 for both ions and X rays photons) and broad particle energy spectra (up to 10 MeV ions and 100 keV photons), the laser fusion community lacks of facilities to accurately test plasma facing materials under those conditions. In the present work, the ability of ultraintese lasers to create short pulses of energetic particles and high fluences is addressed as a solution to reproduce those ion and X-ray bursts. Based on those parameters, a comparison between fusion ion and laser driven ion beams is presented and discussed, describing a possible experimental set-up to generate with lasers the appropriate ion pulses. At the same time, the possibility of generating X-ray or neutron beams which simulate those of laser fusion environments is also indicated and assessed under current laser intensities. It is concluded that ultraintense lasers should play a relevant role in the validation of materials for laser fusion facilities.
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The ability of ultraintese lasers to create short pulses of energetic particles and high fluences is addressed as a solution to reproduce ion and X-ray ICF bursts for the characterization and validation of plasma facing components. The possibility of using a laser neutron source for material testing will also be discussed.
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One of the main causes for age-related declines in working memory is a higher vulnerability to retroactive interference due to a reduced ability to suppress irrelevant information. However, the underlying neural correlates remain to be established. Magnetoencephalography was used to investigate differential neural patterns in young and older adults performing an interference-based memory task with two experimental conditions, interrupting and distracting, during successful recognition. Behaviorally, both types of retroactive interference significantly impaired accuracy at recognition more in older adults than in young adults with the latter exhibiting greater disruptions by interrupters. Magnetoencephalography revealed the presence of differential age-related neural patterns. Specifically, time-modulated activations in temporo-occipital and superior parietal regions were higher in young adults compared with older adults for the interrupting condition. These results suggest that age-related deficits in inhibitory mechanisms that increase vulnerability to retroactive interference may be associated with neural under-recruitments in a high-interference task.
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Outline: • Introduction • Process Experimental Setup • Experimental Procedure • Experimental Results for Al2024-T351 and Ti6Al4V - Residual stresses - Tensile Strength - Fatigue Life • Discussion and Outlook - Prospects for technological applications of LSP
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One presents in this work the study of the interaction between a focused laser beam and Si nanowires (NWs). The NWs heating induced by the laser beam is studied by solving the heat transfer equation by finite element methods (fem). This analysis permits to establish the temperature distribution inside the NW when it is excited by the laser beam. The overheating is dependent on the dimensions of the NW, both the diameter and the length. When performing optical characterization of the NWs using focused laser beams, one has to consider the temperature increase introduced by the laser beam. An important issue concerns the fact that the NWs diameter has subwavelength dimensions, and is also smaller than the focused laser beam. The analysis of the thermal behaviour of the NWs under the excitation with the laser beam permits the interpretation of the Raman spectra of Si NWs, where it is demonstrated that temperature induced by the laser beam play a major role in shaping the Raman spectrum of Si NWs
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Switching of a signal beam by another control beam at different wavelength is demonstrated experimentally using the optical bistability occurring in a 1.55 mm-distributed feedback semiconductor optical amplifier (DFBSOA) working in reflection. Counterclockwise (S-shaped) and reverse (clockwise) bistability are observed in the output of the control and the signal beam respectively, as the power of the input control signal is increased. With this technique an optical signal can be set in either of the optical input wavelengths by appropriate choice of the powers of the input signals. The switching properties of the DFBSOA are studied experimentally as the applied bias current is increased from below to above threshold and for different levels of optical power in the signal beam and different wavelength detunings between both input signals. Higher on-off extinction ratios, wider bistable loops and lower input power requirements for switching are obtained when the DFBSOA is operated slightly above its threshold value.
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The characteristics of optical bistability in a vertical- cavity semiconductor optical amplifier (VCSOA) operated in reflection are reported. The dependences of the optical bistability in VCSOAs on the initial phase detuning and on the applied bias current are analyzed. The optical bistability is also studied for different numbers of superimposed periods in the top distributed bragg reflector (DBR) that conform the internal cavity of the device. The appearance of the X-bistable and the clockwise bistable loops is predicted theoretically in a VCSOA operated in reflection for the first time, to the best of our knowledge. Moreover, it is also predicted that the control of the VCSOA’s top reflectivity by the addition of new superimposed periods in its top DBR reduces by one order of magnitude the input power needed for the assessment of the X- and the clockwise bistable loop, compared to that required in in-plane semiconductor optical amplifiers. These results, added to the ease of fabricating two-dimensional arrays of this kind of device could be useful for the development of new optical logic or optical signal regeneration devices.
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This paper analyzes the behavior of a neural processing unit based on the optical bistable properties of semiconductor laser amplifiers. A similar unit to the reported here was previously employed in the simulation of the mammalian retina. The main advantages of the present cell are its larger fan-out and the possibility of different responses according to the light wavelength impinging onto the cell. These properties allow to work with larger structures as well as to obtain different behaviors according to the light characteristics. This new approach gives a possible modeling closer to the real biological configurations. Moreover, a more detailed analysis of the basic cell internal behavior is reported
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The optical bistability occurring in laser diode amplifiers is used to design an all-optical logic gate capable to provide the whole set of logic functions. The structure of the reported logic gate is based on two connected 1550nm laser amplifiers (Fabry-Perot and distributed feedback laser amplifiers).
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El origen del proyecto se encuentra en la mejora de un inversor trifásico sinusoidal comercial sobre la base del estudio de las técnicas de excitación óptimas para los IGBTs que lo componen en su etapa de potencia. En las primeras fases de planteamiento del proyecto se propone una idea mucho más ambiciosa, la realización de un nuevo convertidor de emergencia, destinado al sector ferroviario, para dar servicio de climatización. Este convertidor está formado por la asociación en cascada de un bloque DC/DC elevador y un bloque inversor DC/AC trifásico controlado mediante PWM con modulación sinusoidal. Se pretendía así dar solución a las siguientes problemáticas detectadas en los convertidores comercializados hasta el momento: un bloque elevador excesivamente sobredimensionado, subsistemas de control independientes para los dos bloques que configuran el convertidor, adicionalmente, la tarjeta driver se rediseña con cada cambio de especificaciones por parte de un nuevo cliente y finalmente, las comunicaciones tanto de diagnosis como de mantenimiento necesitaban una importante actualización. Inicialmente, se ha realizado un estudio teórico de los bloques elevador e inversor para poder realizar el diseño y dimensionamiento de sus componentes tanto semiconductores como electromagnéticos. Una vez completada la parte de potencia, se estudia el control que se realiza mediante medidas directas y simulación tanto de la estrategia de control del elevador como del inversor. Así se obtiene una información completa de la funcionalidad de las tarjetas existentes. Se desea realizar el diseño de una única tarjeta controladora y una única tarjeta de drivers para ambos bloques. Por problemas ajenos, en el transcurso de este proyecto se cancela su realización comercial, con lo que se decide al menos crear la placa de control y poder gobernar un convertidor ya existente, sustituyendo la tarjeta de control del bloque elevador. Para poder fabricar la placa de control se divide en dos tarjetas que irán conectadas en modo sándwich. En una tarjeta está el microcontrolador y en otra está todo el interface necesario para operar con el sistema: entradas y salidas digitales, entradas y salidas analógicas, comunicación CAN, y un pequeño DC/DC comercial que proporciona alimentación al prototipo. Se realiza un pequeño programa funcional para poder manejar el convertidor, el cual con una tensión de 110V DC, proporciona a la salida una tensión de 380V AC. Como ya se ha expuesto, debido a la cancelación del proyecto industrial no se profundiza más en su mejora y se decide proponerlo para su evaluación en su fase actual. ABSTRACT. The beginning of the project is found in the improvement of a commercial sine wave three phase inverter which is based in a study about optimal excitation techniques to IGBTs which compose in the power stage. In the early phases of project it is proposed a much more ambitious idea, the fact of a new emergency converter, proposed for the rail sector to work in an air condition unit. This converter is formed by an association of a block cascaded DC/DC booster and a block DC/AC inverter three-phase controlled by a sine wave modulation PWM. The purposed was to give a solution to following problems detected in commercial converters nowadays: an excessively oversized block boost, independent control subsystems for two blocks that configure the converter. In addition, driver board is redesigned with each specifications change demand it a new customer, and finally, the communications, diagnostic and maintenance that needed a important upgrade. Initially, it has been performed a theoretical study of boost and the inverter blocks to be able to perform the component’s design and the size (semiconductor and electromagnetic fields). Once finished power study, it is analysed the control performed using direct measures and simulation of boost control strategy and inverter. With this it is obtained complete information about existing cards functionality. The project is looking for the design of just one controller card and one drivers´ card for both blocks. By unrelated problems, during the course of this project a commercial realization. So at least its decided to create control board to be able to existing converter, replacing boost block’s control board. To be able to manufacture control board it is divided in two cards connected in sandwiching mode. In a card is microcontroller and in another is all needed interface to operate with the system: digital inputs and outputs, analogical inputs and outputs, CAN communication, and a small DC / DC business that provide power supply to the prototype. It is performed a small functional program to handle the converter, which with an input voltage 110V DC provides an output voltage 380V AC. As already has been exposed, due to industrial project cancellation it is decided no to continue with all improvements and directly to evaluate it in the current phase.