Turn-off failure mechanism in large area IGCTs

The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer. © 2011 IEEE.

Stability enhancement by casing grooves: The importance of stall inception mechanism and solidity

This paper concerns the optimisation of casing grooves and the important influence of stall inception mechanism on groove performance. Installing casing grooves is a well known technique for improving the stable operating range of a compressor, but the wide-spread use of grooves is restricted by the loss of efficiency and flow capacity. In this paper, laboratory tests are used to examine the conditions under which casing treatment can be used to greatest effect. The use of a single casing groove was investigated in a recently published companion paper. The current work extends this to multiple-groove treatments and considers their performance in relation to stall inception mechanisms. Here it is shown that the stall margin gain from multiple grooves is less than the sum of the gains if the grooves were used individually. By contrast, the loss of efficiency is additive as the number of grooves increases. It is then shown that casing grooves give the greatest stall margin improvement when used in a compressor which exhibits spike-type stall inception, while modal activity before stall can dramatically reduce the effectiveness of the grooves. This finding highlights the importance of being able to predict the stall inception mechanism which might occur in a given compressor before and after grooves are added. Some published prediction techniques are therefore examined, but found wanting. Lastly, it is shown that casing grooves can, in some cases, be used to remove rotor blades and produce a more efficient, stable and light-weight rotor. © 2010 by ASME.

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.

Conduction bottleneck in silicon nanochain single electron transistors operating at room temperature

Single electron transistors are fabricated on single Si nanochains, synthesised by thermal evaporation of SiO solid sources. The nanochains consist of one-dimensional arrays of ~10nm Si nanocrystals, separated by SiO 2 regions. At 300 K, strong Coulomb staircases are seen in the drain-source current-voltage (I ds-V ds) characteristics, and single-electron oscillations are seen in the drain-source current-gate voltage (I ds-V ds) characteristics. From 300-20 K, a large increase in the Coulomb blockade region is observed. The characteristics are explained using singleelectron Monte Carlo simulation, where an inhomogeneous multiple tunnel junction represents a nanochain. Any reduction in capacitance at a nanocrystal well within the nanochain creates a conduction " bottleneck", suppressing current at low voltage and improving the Coulomb staircase. The single-electron charging energy at such an island can be very high, ~20k BT at 300 K. © 2012 The Japan Society of Applied Physics.

The in vivo synaptic plasticity mechanism of EGb 761-induced enhancement of spatial learning and memory in aged rats

1 It has not been uniform to date that the Ginkgo biloba extracts enhance cognitive function in aged animals, and the mechanisms of action remain difficult to elucidate. In this study, the Morris water maze task and electrophysiological methods were used

Growth window and possible mechanism of millimeter-thick single-walled carbon nanotube forests.

Our group recently reproduced the water-assisted growth method, so-called "SuperGrowth", of millimeter-thick single-walled carbon nanotube (SWNT) forests by using C2H4/H2/H2O/Ar reactant gas and Fe/Al2O3, catalyst. In this current work, a parametric study was carried out on both reaction and catalyst conditions. Results revealed that a thin Fe catalyst layer (about 0.5 nm) yielded rapid growth of SWNTs only when supported on Al2O3, and that Al2O3 support enhanced the activity of Fe, Co, and Ni catalysts. The growth window for the rapid SWNT growth was narrow, however. Optimum amount of added H2O increased the SWNT growth rate but further addition of H2O degraded both the SWNT growth rate and quality. Addition of H2 was also essential for rapid SWNT growth, but again, further addition decreased both the SWNT growth rate and quality. Because Al2O3 catalyzes hydrocarbon reforming, Al2O3 support possibly enhances the SWNT growth rate by supplying the carbon source to the catalyst nanoparticles. The origin of the narrow window for rapid SWNT growth is also discussed.

Centrifugal modelling of the landslides triggering mechanism in layered fill slopes

Concerns over loosely compacted fill slopes stability in Hong Kong arouse in the past few decades, since the Sau Mau Ping disasters in 1972 and 1976. Research conducted on loose fill slopes in the past few years aimed to understand the failure mechanisms of a loosely compacted fill slope. Recently, layering effect has been hypothesised to be a possible condition in the fill slopes leading to a fast flowslide triggered by a rise of water table. Centrifuge experiments were conducted to investigate the layering effect on a model granular slope and hence to determine the triggering mechanisms of seepage induced slope failure. Test results showed that slope failure can be easily triggered in layered fill model slopes when seepage is restricted and localised pore water pressure is allowed to build up within the slope. © 2006 Taylor & Francis Group, London.