Batch and filter approaches to spacecraft sensor alignment estimation

Two Kalman-filter formulations are presented for the estimation of spacecraft sensor misalignments from inflight data. In the first the sensor misalignments are part of the filter state variable; in the second the state vector contains only dynamical variables, but the sensitivities of the filter innovations to the misalignments are calculated within the Kalman filter. This procedure permits the misalignments to be estimated in batch mode as well as a much smaller dimension for the Kalman filter state vector. This results not only in a significantly smaller computational burden but also in a smaller sensitivity of the misalignment estimates to outliers in the data. Numerical simulations of the filter performance are presented.

New 12kW three-phase 18-pulse high power factor AC-DC converter with regulated output voltage for rectifier units

This work presents a new high power factor three-phase rectifier based on a Y-connected differential autotransformer with reduced kVA and 18-pulse input current followed by three DC-DC boost converters. The topology provides a regulated output voltage and natural three-phase input power factor correction. The lowest input current harmonic components are the 17th and the 19th. Three boost converters, with constant input currents and regulated parallel connected output voltages are used to process 4kW each one. Analytical results from Fourier analyses of winding currents and the vector diagram of winding voltages are presented. Simulation results to verify the proposed concept and experimental results are shown in the paper.

On designing linearly-tunable ultra-low voltage CMOS gm-C filters

A linearly-tunable ULV transconductor featuring excellent stability of the processed signal common-mode voltage upon tuning, critical for very-low voltage applications, is presented. Its employment to the synthesis of CMOS gm-C high-frequency and voiceband filters is discussed. SPICE data describe the filter characteristics. For a 1.3 V-supply, their nominal passband frequencies are 1.0 MHz and 3.78 KHz, respectively, with tuning rates of 12.52 KHz/mV and 0.16 KHz/m V, input-referred noise spectral density of 1.3 μV/Hz1/2 and 5.0μV/Hz1/2 and standby consumption of 0.87 mW and 11.8 μW. Large-signal distortion given by THD = 1% corresponds to a differential output-swing of 360 mVpp and 480 mVpp, respectively. Common-mode voltage deviation is less than 4 mV over tuning interval.

Sensor for hydrogen peroxide based on Prussian Blue modified electrode: Improvement of the operational stability

Improvement of the operational stability of amperometric sensors based on Prussian Blue (PB) modified glassy carbon electrodes is presented. The long term performance of the sensors was evaluated by injection of hydrogen peroxide (5 μM in potassium buffer) solutions in a flow-injection system during a period of 5-10 h. The following parameters were investigated and correlated with the performance of the sensor: the times for electrodeposition and electrochemical activation, temperature, storage time, pH, composition of the buffer solution and of volume sample injected. These analytical characteristics of the modified electrode can be emphasized: initial sensitivity of 0.3 A cm-2 M-1, detection limit of ca. 0.5 μM, precise results (r.s.d.< 1.5%) and possibility to carry out around 50 samples (50 μL) per hour.

An accurate low-voltage analog memory-cell with built-in multiplication

A CMOS memory-cell for dynamic storage of analog data and suitable for LVLP applications is proposed. Information is memorized as the gate-voltage of input-transistor of a gain-boosting triode-transconductor. The enhanced output-resistance improves accuracy on reading out the sampled currents. Additionally, a four-quadrant multiplication between the input to regulation-amplifier of the transconductor and the stored voltage is provided. Designing complies with a low-voltage 1.2μm N-well CMOS fabrication process. For a 1.3V-supply, CCELL=3.6pF and sampling interval is 0.25μA≤ ISAMPLE ≤ 0.75μA. The specified retention time is 1.28ms and corresponds to a charge-variation of 1% due to junction leakage @75°C. A range of MR simulations confirm circuit performance. Absolute read-out error is below O.40% while the four-quadrant multiplier nonlinearity, at full-scale is 8.2%. Maximum stand-by consumption is 3.6μW/cell.

A low-voltage programmable-gain CMOS amplifier with very-low temperature-drift

A new topology for a LVLP variable-gain CMOS amplifier is presented. Input- and load-stage are built around triode-transconductors so that voltage-gain is fully defined by a linear relationship involving only device-geometries and biases. Excellent gain-accuracy, temperature-insensitivity; and wide range of programmability, are thus achieved. Moreover, adaptative biasing improves the common-mode voltage stability upon gain-adjusting. As an example, a 0-40dB programmablegain audio-amplifier is designed. Its performance is supported by a range of simulations. For VDD=1.8V and 20dB-nominal gain, one has Av=19.97dB, f3db=770KHz and quiescent dissipation of 378μW. Over temperatures from -25°C to 125°C, the 0. ldB-bandwidth is 52KHz. Dynamic-range is optimized to 57.2dB and 42.6dB for gains of 20dB and 40dB, respectively. THD figures correspond to -60.6dB@Vout= 1Vpp and -79.7dB@Vout= 0.5 Vpp. A nearly constant bandwidth for different gains is also attained.

A low-voltage triode-MOSFET four-quadrant multiplier with optimized current-efficiency

A low-voltage, low-power four-quadrant analog multiplier with optimized current-efficiency is presented. Its core corresponds to a pseudodifferential cascode, gain-boosting triode-transconductor. According to a low-voltage 1.2μm CMOS n-well process, operand differential-amplitudes are 1.0Vpp and 0.32Vpp for a 1.3V-supply. Common-mode voltages are properly chosen to maximize current-efficiency to 58%. Total quiescent dissipation is 260μW. A range of PSPICE simulation supports theoretical analysis. Excellent linearity is observed on dc characteristic. Assuming a ±0.5% mismatch on (W/L) and VTH THD at full-scale is 0.93% and 1.42%, for output frequencies of 1MHz and 10MHz, respectively.

Effect of powder milling and dopant addition on the current-voltage characteristics of SnO2-based ceramics

Non-linear electrical properties of SnO2-based ceramics were investigated as a function of powder agglomeration condition and as a function of dopant addition. All doped powders presented a single phase, cassiterite, as evidenced by X-ray diffraction analysis. The effect of milling was quite evident, with non-milled powder showing higher agglomerated particle size than milled powder. Cr addition seemed to increase the non-linear coefficient. Cu and Mn rendered dense ceramics, but α values for systems with Mn were higher than for systems with Cu.

Electrode poling of cellular polypropylene films with short high-voltage pulses

Recently, piezoelectric cellular polypropylene (PP) was proposed as a new type of quasi-ferroelectric. The observed hysteresis of the charge density as a function of the electric field could be explained as field-dependent charging inside the gas-filled voids. Interestingly enough, the measurable poling behavior of the macroscopic dipoles formed by charges that are trapped at the internal void surfaces is phenomenologically completely identical to the cooperative poling behavior of microscopic molecular dipoles in ferroelectric polymers. Therefore, it can be assumed that charge separation (or charge redistribution) and subsequent trapping in cellular PP is a rather fast switching process. In order to examine the poling dynamics, we developed an experimental setup for pulsed poling. High-voltage pulses with a duration of 45 μs (FWHM) were applied in direct contact to two-side metallized cellular PP films. The pulsed poling yields piezoelectricity in the cellular PP. We study and discuss the dependence of the resulting piezoelectricity on the poling field. We also characterize the charge separation during application of higher electric poling fields of up to -10 kV in direct contact to the two-side metallized films for longer times.

A linearly-tunable OTA-C sinusoidal oscillator for low-voltage applications

A low-voltage, low-power OTA-C sinusoidal oscillator based on a triode-MOSFET transconductor is here discussed. The classical quadrature model is employed and the transconductor inherent nonlinear characteristic with input voltage is used as the amplitude-stabilization element. An external bias VTUNE linearly adjusts the oscillation frequency. According to a standard 0.8μm CMOS n-well process, a prototype was integrated, with an effective area of 0.28mm2. Experimental data validate the theoretical analysis. For a single 1.8V-supply and 100mV≤VTUNE≤250mV, the oscillation frequency fo ranges from 0.50MHz to 1.125MHz, with a nearly constant gain KVCO=4.16KHz/mV. Maximum output amplitude is 374mVpp @1.12MHz. THD is -41dB @321mVpp. Maximum average consumption is 355μW.

A low-voltage programmable-gain current-mode amplifier

A CMOS low-voltage, wide-band continuous-time current amplifier is presented. Based on an open-loop topology, the circuit is composed by transresistance and transconductance stages built around triode-operating transistors. In addition to an extended dynamic range, the amplifier gain can be programmed within good accuracy by the rapport between the aspect-ratio of such transistors and tuning biases Vxand Vy. A balanced current-amplifier according to a single I. IV-supply and a 0.35μm fabrication process is designed. Simulated results from PSPiCE and Bsm3v3 models indicate a programmable gain within the range 20-34dB and a minimum break-frequency of IMHz @CL=IpF. For a 200 μApp-level, THD is 0.8% and 0.9% at IKHz and 100KHz, respectively. Input noise is 405pA√Hz @20dB-gain, which gives a SNR of 66dB @1MHz-bandwidth. Maximum quiescent power consumption is 56μ W. © 2002 IEEE.

Stable and metastable ferroelectric polarization analyzed by the ramp voltage technique

The study of the stable and the metastable ferroelectric polarization of poly(vinylidene fluoride), PVDF, was performed using two successive equal sign ramp voltages, mediated by a short-circuit period. Rates from 10 V/s up to 0.7 MV/s were used. Results showed that they follow different formation kinetics; that the stable part decreases for higher ramp voltage rates and its apparent coercive field increases.

Using artificial intelligence for the control of medium voltage substations

This paper introduces a method for the supervision and control of devices in electric substations using fuzzy logic and artificial neural networks. An automatic knowledge acquisition process is included which allows the on-line processing of operator actions and the extraction of control rules to replace gradually the human operator. Some experimental results obtained by the application of the implemented software in a simulated environment with random signal generators are presented.

The effect of actuator and sensor placement on the active control of rotor unbalance

This paper investigates both theoretically and experimentally the effect of the location and number of sensors and magnetic bearing actuators on both global and local vibration reduction along a rotor using a feedforward control scheme. Theoretical approaches developed for the active control of beams have been shown to be useful as simplified models for the rotor scenario. This paper also introduces the time-domain LMS feedforward control strategy, used widely in the active control of sound and vibration, as an alternative control methodology to the frequency-domain feedforward approaches commonly presented in the literature. Results are presented showing that for any case where the same number of actuators and error sensors are used there can be frequencies at which large increases in vibration away from the error sensors can occur. It is also shown that using a larger number of error sensors than actuators results in better global reduction of vibration but decreased local reduction. Overall, the study demonstrated that an analysis of actuator and sensor locations when feedforward control schemes are used is necessary to ensure that harmful increased vibrations do not occur at frequencies away from rotor-bearing natural frequencies or at points along the rotor not monitored by error sensors.

An active leakage-injection scheme applied to low-voltage SRAMs

An active leakage-injection scheme (ALIS) for low-voltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a common-drain MOSFET, a current matching the respective bit-line leakage is injected onto the line during precharge and sensing, preventing the respective capacitances from erroneous discharges. The technique is able to handle leakages up to hundreds of μA at high operating temperatures. Since no additional timing is required, read-out operations are performed at no speed penalty. A simplified 256×1bit array was designed in accordance with a 0.35 CMOS process and 1.2V-supply. A range of PSPICE simulation attests the efficacy of ALIS. With an extra power consumption of 242 μW, a 200 μA-leakage @125°C, corresponding to 13.6 times the cell current, is compensated.