982 resultados para topological insulator


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We have synthesized La0.83Na0.11MnO2.93 by heating La2O3 and MnCO3 in NaCl melt at 900 °C. The exact composition was arrived by analyzing each ion by an independent chemical method. The compound crystallized in a rhombohedral structure and showed an insulator-to-metal transition at 290 K. Epitaxial thin films were fabricated on LaAlO3 (100) using a pulsed laser deposition technique. The film also showed an insulator-to-metal transition at 290 K. Magnetoresistance [ΔR/R0 = (RH−R0)/R0] was −71% near the insulator-to-metal transition temperature of 290 K at 6 T magnetic field.

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The Morse-Smale complex is a useful topological data structure for the analysis and visualization of scalar data. This paper describes an algorithm that processes all mesh elements of the domain in parallel to compute the Morse-Smale complex of large two-dimensional data sets at interactive speeds. We employ a reformulation of the Morse-Smale complex using Forman's Discrete Morse Theory and achieve scalability by computing the discrete gradient using local accesses only. We also introduce a novel approach to merge gradient paths that ensures accurate geometry of the computed complex. We demonstrate that our algorithm performs well on both multicore environments and on massively parallel architectures such as the GPU.

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Transport and magnetic properties of flux-grown Nd1−xPbxMnO3 single crystals (x=0.15–0.5) are studied in the temperature range 300–77 K and 280–2 K, respectively. Magnetization measurements with a superconducting quantum interference device confirm a paramagnetic to ferromagnetic transition around 110, 121, 150, 160, and 178 K for x=0.15, 0.2, 0.3, 0.4, and 0.5, respectively. Four probe resistivity measurements at low temperatures show a monotonic increase for x=0.15 which represents a ferromagnetic insulating (FMI) phase. For Nd0.8Pb0.2MnO3 there is a slope change present in the resistivity profile at 127 K where metal to insulator transition (MI) sets in. For x=0.3 this MI transition is more prominent. However, both these samples have FMI phase at low temperature. When the concentration of lead increases (x>0.3) the sample displays a clear insulator to metal transition with a low temperature ferromagnetic metallic phase. On the basis of these measurements we have predicted the phase diagram of Nd1−xPbxMnO3. Magnetization measurements by a vibration sample magnetometer point out the appreciable differences between zero field cooled and field cooled profiles below the ferromagnetic to paramagnetic transition temperature for all x. These are indicative of magnetic frustration.

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Barium zirconium titanate [Ba(Zr0.05Ti0.95)O3, BZT] thin films were prepared by pulsed laser ablation technique and dc leakage current conduction behavior was extensively studied. The dc leakage behavior study is essential, as it leads to degradation of the data storage devices. The current-voltage (I-V) of the thin films showed an Ohmic behavior for the electric field strength lower than 7.5 MV/m. Nonlinearity in the current density-voltage (J-V) behavior has been observed at an electric field above 7.5 MV/m. Different conduction mechanisms have been thought to be responsible for the overall I-V characteristics of BZT thin films. The J-V behavior of BZT thin films was found to follow Lampert’s theory of space charge limited conduction similar to what is observed in an insulator with charge trapping moiety. The Ohmic and trap filled limited regions have been explicitly observed in the J-V curves, where the saturation prevailed after a voltage of 6.5 V referring the onset of a trap-free square region. Two different activation energy values of 1.155 and 0.325 eV corresponding to two different regions have been observed in the Arrhenius plot, which was attributed to two different types of trap levels present in the film, namely, deep and shallow traps.

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Abstract | Electrical switching which has applications in areas such as information storage, power control, etc is a scientifically interesting and technologically important phenomenon exhibited by glassy chalcogenide semiconductors. The phase change memories based on electrical switching appear to be the most promising next generation non-volatile memories, due to many attributes which include high endurance in write/read operations, shorter write/read time, high scalability, multi-bit capability, lower cost and a compatibility with complementary metal oxide semiconductor technology.Studies on the electrical switching behavior of chalcogenide glasses help us in identifying newer glasses which could be used for phase change memory applications. In particular, studies on the composition dependence of electrical switching parameters and investigations on the correlation between switching behavior with other material properties are necessary for the selection of proper compositions which make good memory materials.In this review, an attempt has been made to summarize the dependence of the electrical switching behavior of chalcogenide glasses with other material properties such as network topological effects, glass transition & crystallization temperature, activation energy for crystallization, thermal diffusivity, electrical resistivity and others.

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Generalized Bose operators correspond to reducible representations of the harmonic oscillator algebra. We demonstrate their relevance in the construction of topologically non-trivial solutions in noncommutative gauge theories, focusing our attention to flux tubes, vortices, and instantons. Our method provides a simple new relation between the topological charge and the number of times the basic irreducible representation occurs in the reducible representation underlying the generalized Bose operator. When used in conjunction with the noncommutative ADHM construction, we find that these new instantons are in general not unitarily equivalent to the ones currently known in literature.

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In order to improve the tracking and erosion performance of outdoor polymeric silicone rubber (SR) insulators used in HV power transmission lines, micron sized inorganic fillers are usually added to the base SR matrix. In addition, insulators used in high voltage dc transmission lines are designed to have increased creepage distance to mitigate the tracking and erosion problems. ASTM D2303 standard gives a procedure for finding the tracking and erosion resistance of outdoor polymeric insulator weathershed material samples under laboratory conditions for ac voltages. In this paper, inclined plane (IP) tracking and erosion tests similar to ASTM D2303 were conducted under both positive and negative dc voltages for silicone rubber samples filled with micron and nano sized particles to understand the phenomena occurring during such tests. Micron sized Alumina Trihydrate (ATH) and nano sized alumina fillers were added to silicone rubber matrix to improve the resistance to tracking and erosion. The leakage current during the tests and the eroded mass at the end of the tests were monitored. Scanning Electron Microscopy (SEM) and Energy dispersive Xray (EDX) studies were conducted to understand the filler dispersion and the changes in surface morphology in both nanocomposite and microcomposite samples. The results suggest that nanocomposites performed better than microcomposites even for a small filler loading (4%) for both positive and negative dc stresses. It was also seen that the tracking and erosion performance of silicone rubber is better under negative dc as compared to positive dc voltage. EDX studies showed migration of different ions onto the surface of the sample during the IP test under positive dc which has led to an inferior performance as compared to the performance under negative dc.

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We report the results of the electrical switching studies performed on the bulk Al20GexTe80-x (2.5 less than or equal to x less than or equal to 15) chalcogenide glasses. The well known topological features, mechanical and chemical thresholds are observed. Mechanical threshold is seen at a mean coordination number of atoms, < r > = 2.50 (x = 5) a clear shift rom the mean field value of < r > = 2.4 whereas the chemical threshold is observed at < r > = 2.65 (x = 12.5) as predicted by the chemically ordered covalent network model These experiments are a sequel to similar experiments on Al20AsxTe80-x glasses in which mechanical threshold was seen at < r > = 2.60 and no chemical threshold was observed These results am well understood by a chemical bond picture developed in this article.

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Energy and charge aspects of two types of ion association - between oppositely-charged and between like-charged species - were quantified using the topological analysis of the electron density function derived from the low-temperature X-ray diffraction experiment for a crystal of aminoacetonitrile picrate (sp. gr. Cmca, Z = 8, R = 0.0187), providing an experimental evidence of their ``equal rights'' in crystal packing formation.

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We develop an inhomogeneous mean-field theory for the extended Bose-Hubbard model with a quadratic, confining potential. In the absence of this potential, our mean-field theory yields the phase diagram of the homogeneous extended Bose-Hubbard model. This phase diagram shows a superfluid (SF) phase and lobes of Mott-insulator (MI), density-wave (DW), and supersolid (SS) phases in the plane of the chemical potential mu and on-site repulsion U; we present phase diagrams for representative values of V, the repulsive energy for bosons on nearest-neighbor sites. We demonstrate that, when the confining potential is present, superfluid and density-wave order parameters are nonuniform; in particular, we obtain, for a few representative values of parameters, spherical shells of SF, MI, DW, and SS phases. We explore the implications of our study for experiments on cold-atom dipolar condensates in optical lattices in a confining potential.

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Deleterious topological-closed-packed (tcp) phases grow in the interdiffusion zone in turbine blades mainly because of the addition of refractory elements such as Mo and W in the Ni- and Co-based superalloys. CoNi/Mo and CoNi/W diffusion couples are prepared to understand the growth mechanism of the phases in the interdiffusion zone. Instead of determining the main and cross-interdiffusion coefficients following the conventional method, we preferred to determine the average effective interdiffusion coefficients of two elements after fixing the composition of one element more or less the same in the interdiffusion zone. These parameters can be directly related to the growth kinetics of the phases and shed light on the atomic mechanism of diffusion. In both systems, the diffusion rate of elements and the phase layer thickness increased because of the addition of Ni in the solid solution phase, probably because of an increase in driving force. On the other hand, the growth rate of the mu phase and the diffusion coefficient of the species decreased because of the addition of Ni. This indicates the change in defect concentration, which assists diffusion. Further, we revisited the previously published Co-Ni-Mo and Co-Ni-W ternary phase diagrams and compared them with the composition range of the phases developed in the interdiffusion zone. Different composition ranges of the tcp phases are found, and corrected phase diagrams are shown. The outcome of this study will help to optimize the concentration of elements in superalloys to control the growth of the tcp phases.

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The last few decades have witnessed application of graph theory and topological indices derived from molecular graph in structure-activity analysis. Such applications are based on regression and various multivariate analyses. Most of the topological indices are computed for the whole molecule and used as descriptors for explaining properties/activities of chemical compounds. However, some substructural descriptors in the form of topological distance based vertex indices have been found to be useful in identifying activity related substructures and in predicting pharmacological and toxicological activities of bioactive compounds. Another important aspect of drug discovery e. g. designing novel pharmaceutical candidates could also be done from the distance distribution associated with such vertex indices. In this article, we will review the development and applications of this approach both in activity prediction as well as in designing novel compounds.

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Helicopter trim involves solution of nonlinear force equilibrium equations. As in many nonlinear dynamic systems, helicopter trim problem can show chaotic behavior. This chaotic behavior is found in the basin of attraction of the nonlinear trim equations which have to be solved to determine the main rotor control inputs given by the pilot. This study focuses on the boundary of the basin of attraction obtained for a set of control inputs. We analyze the boundary by considering it at different magnification levels. The magnified views reveal intricate geometries. It is also found that the basin boundary exhibits the characteristic of statistical self-similarity, which is an essential property of fractal geometries. These results led the authors to investigate the fractal dimension of the basin boundary. It is found that this dimension is indeed greater than the topological dimension. From all the observations, it is evident that the boundary of the basin of attraction for helicopter trim problem is fractal in nature. (C) 2012 Elsevier Inc. All rights reserved.

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We present an extensive study of Mott insulator (MI) and superfluid (SF) shells in Bose-Hubbard (BH) models for bosons in optical lattices with harmonic traps. For this we apply the inhomogeneous mean-field theory developed by Sheshadri et al. Phys. Rev. Lett. 75, 4075 (1995)]. Our results for the BH model with one type of spinless bosons agree quantitatively with quantum Monte Carlo simulations. Our approach is numerically less intensive than such simulations, so we are able to perform calculations on experimentally realistic, large three-dimensional systems, explore a wide range of parameter values, and make direct contact with a variety of experimental measurements. We also extend our inhomogeneous mean-field theory to study BH models with harmonic traps and (a) two species of bosons or (b) spin-1 bosons. With two species of bosons, we obtain rich phase diagrams with a variety of SF and MI phases and associated shells when we include a quadratic confining potential. For the spin-1 BH model, we show, in a representative case, that the system can display alternating shells of polar SF and MI phases, and we make interesting predictions for experiments in such systems.

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The Morse-Smale complex is a topological structure that captures the behavior of the gradient of a scalar function on a manifold. This paper discusses scalable techniques to compute the Morse-Smale complex of scalar functions defined on large three-dimensional structured grids. Computing the Morse-Smale complex of three-dimensional domains is challenging as compared to two-dimensional domains because of the non-trivial structure introduced by the two types of saddle criticalities. We present a parallel shared-memory algorithm to compute the Morse-Smale complex based on Forman's discrete Morse theory. The algorithm achieves scalability via synergistic use of the CPU and the GPU. We first prove that the discrete gradient on the domain can be computed independently for each cell and hence can be implemented on the GPU. Second, we describe a two-step graph traversal algorithm to compute the 1-saddle-2-saddle connections efficiently and in parallel on the CPU. Simultaneously, the extremasaddle connections are computed using a tree traversal algorithm on the GPU.