Application of Imaging to Study the Evolution and Dynamics of Laser Produced Plasma from Solid and Thin Film Li Targets

The present thesis report the results obtained from the studies carried out on the laser blow off plasma (LBO) from LiF-C (Lithium Fluoride with Carbon) thin film target, which is of particular importance in Tokamak plasma diagnostics. Keeping in view of its significance, plasma generated by the irradiation of thin film target by nanosecond laser pulses from an Nd:YAG laser over the thin film target has been characterized by fast photography using intensified CCD. In comparison to other diagnostic techniques, imaging studies provide better understanding of plasma geometry (size, shape, divergence etc) and structural formations inside the plume during different stages of expansion.

Highly conductive and transparent ZnO thin film using Chemical Spray Pyrolysis technique: Effect of doping and deposition parameters

In the present work we report the preparation details studies on ZnO thin films. ZnO thin films are prepared using cost effective deposition technique viz., Chemical Spray Pyrolysis (CSP). The method is very effective for large area preparation of the ZnO thin film. A new post-deposition process could also be developed to avoid the adsorption of oxygen that usually occurs after the spraying process i.e., while cooling. Studies were done by changing the various deposition parameters for optimizing the properties of ZnO thin film. Moreover, different methods of doping using various elements are also tried to enhance the conductivity and transparency of the film to make these suitable for various optoelectronic applications.

Electrical switching studies on the thin films of polyfuran and polyacrylonitrile prepared by plasma polymerisation and vacuum evaporated amorphous silicon

This thesis Entitled Electrical switching studies on the thin flims of polyfuran and polyacrylonitrile prepared by plasma polymerisation and vacuum evaporated amorphous silicon.A general introduction to the switching and allied phenomena is presented. Subsequently, developments of switching in thin films are described. The Mott transition is qualitatively presented. The working of a switching transitor is outlined and compared to the switching observed in thin films. Characteristic parameters of switching such as threshold voltage, time response to a, voltage pulse, and delay time are described. The various switching configurations commonly used are discussed. The mechanisms used to explain the switching behaviour like thermal, electrothermal and purely electronic are reviewed. Finally the scope, feasibility and the importance of polymer thin films in switching are highlighted.

Elecrical conduction and dielectric behaviour of thin films of vacuum evaporated amorphous silicon, hydrogenated amorphous silicon and chemically deposited cadmium sulphide

A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering, glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode structure, film area and film geometry.

Formation and characterisation of indium selenide thin films by elemental evaporation

This thesis deals with preparing stoichiometric crystalline thin films of InSe and In2Se3 by elemental evapouration and their property investigation.In the present study three temperature( or Elemental evapouration) method is utilized for the deposition of crystalline thin films . The deposition mechanism using three temperature method deals’ with condensation of solids on heated surfaces when the critical supersaturation of the vapour phase exceeds a certain limit. The critical values of the incident flux are related to substrate temperature and the interfacial energies of the involved vapours. At a favorable presence of component atoms in the vapour phase these can react and condense onto a substrate even at a elevated temperature. In the studies conducted the most significant factor is the formation of single compositional film namely indium mono selenide in the In –se system of compounds .Further this work shows the feasibility of thin film photovoltaic junctions of the schottky barrier type

An investigation on the preparation and properties of certian semiconducting sulphide thin films

In this thesis the preparation and properties of thin films of certain semiconducting sulphides (sulphides of tin, copper and indium) are reported. As single source evaporation does not yield satisfactory films of these compounds for a variety of reasons, reactive evaporation of the metal in a sulphur atmosphere has been used for film preparation. It was found that for each metal sulphide a stoichimetric interval of fluxes and substrate temperature exists for the formation of the compound in accordance with the analysis of Guenther. The first chapter of the thesis gives a resume of the basic principles of semiconductor physics relevant to the work reported here. In the second chapter is discussed in detail the reactive evaporation techniques like ordinary reactive evaporation, activated reactive evaporation and reactive ion plating. Third chapter deals with the experimental techniques used in this study for film preparation and characterization. In the next seven chapters is discussed the preparation and properties of the compound films studied. The last chapter gives a general theory of the formation of compound films in various deposition techniques in terms of the kinetic energy of the film forming particles. It must be mentioned here that this is of fundamental importance to thin film deposition and is virtually untouched in the literature

Investigations on polyaniline based systems for technologically important applications and some novel polymers as prospective candidates for fabricating polymer light emitting diodes

Light emitting polymers (LEP) have drawn considerable attention because of their numerous potential applications in the field of optoelectronic devices. Till date, a large number of organic molecules and polymers have been designed and devices fabricated based on these materials. Optoelectronic devices like polymer light emitting diodes (PLED) have attracted wide-spread research attention owing to their superior properties like flexibility, lower operational power, colour tunability and possibility of obtaining large area coatings. PLEDs can be utilized for the fabrication of flat panel displays and as replacements for incandescent lamps. The internal efficiency of the LEDs mainly depends on the electroluminescent efficiency of the emissive polymer such as quantum efficiency, luminance-voltage profile of LED and the balanced injection of electrons and holes. Poly (p-phenylenevinylene) (PPV) and regio-regular polythiophenes are interesting electro-active polymers which exhibit good electrical conductivity, electroluminescent activity and high film-forming properties. A combination of Red, Green and Blue emitting polymers is necessary for the generation of white light which can replace the high energy consuming incandescent lamps. Most of these polymers show very low solubility, stability and poor mechanical properties. Many of these light emitting polymers are based on conjugated extended chains of alternating phenyl and vinyl units. The intra-chain or inter-chain interactions within these polymer chains can change the emitted colour. Therefore an effective way of synthesizing polymers with reduced π-stacking, high solubility, high thermal stability and high light-emitting efficiency is still a challenge for chemists. New copolymers have to be effectively designed so as to solve these issues. Hence, in the present work, the suitability of a few novel copolymers with very high thermal stability, excellent solubility, intense light emission (blue, cyan and green) and high glass transition temperatures have been investigated to be used as emissive layers for polymer light emitting diodes.

Studies on electroluminescence using Powder and thin film devices

The subject of electroluminescence has currently acquired great importance because of its potential applications in display systems of a wide variety. A large number of scientists working in commercial, governmental as well as academic institutions all over the world are at present engaged in the intense effort to develop new and efficient phosphor materials and electroluminescent devices. This thesis presents the work carried out by the author in this field during the past few years. The studies discussed in this thesis are mostly confined to the development of some new phosphor materials, their uses in powder and thin film electroluminescent devices and to their electrical and spectral characteristics. Care has been taken to bring' out the physics involved in all the above aspects of the phenomenon

Nd:Glass laser-induced damage to thin films, two-photon excited fluorescence and plasma studies

Laser-induced damage is the principal limiting constraint in the design and operation of high-power laser systems used in fusion and other high-energy laser applications. Therefore, an understanding of the mechanisms which cause the radiation damage to the components employed in building a laser and a knowledge of the damage threshold of these materials are of great importance in designing a laser system and to operate it without appreciable degradation in performance. This thesis, even though covers three distinct problems for investigations using a dye Q-switched multimode Nd:glass laser operating at 1062 nm and emitting 25 ns (FWHM) pulses, lays its main thrust on damage threshold studies on thin films. Using the same glass laser two-photon excited fluorescence in rhodamine 6G and generation and characterisation of a carbon plasma have also been carried out. The thesis is presented in seven chapters.

Evidence of extended orientational order in amorphous Fe/Sm thin films

Amorphous thin films of Fe/Sm, prepared by evaporation methods, have been magnetically characterized and the results were interpreted in terms of the random magnets theory. The samples behave as 2D and 3D random magnets depending on the total thickness of the film. From our data the existence of orientational order, which greatly influences the magnetic behavior of the films, is also clear.

Competing tunneling and capacitive paths in Co-ZrO2 granular thin films

The ac electrical response is studied in thin films composed of well-defined nanometric Co particles embedded in an insulating ZrO2 matrix which tends to coat them, preventing the formation of aggregates. In the dielectric regime, ac transport originates from the competition between interparticle capacitive Cp and tunneling Rt channels, the latter being thermally assisted. This competition yields an absorption phenomenon at a characteristic frequency 1/(RtCp), which is observed in the range 1010 000 Hz. In this way, the effective ac properties mimic the universal response of disordered dielectric materials. Temperature and frequency determine the complexity and nature of the ac electrical paths, which have been successfully modeled by an Rt-Cp network.