985 resultados para spray technology


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Wave pipelining is a design technique for increasing the throughput of a digital circuit or system without introducing pipelining registers between adjacent combinational logic blocks in the circuit/system. However, this requires balancing of the delays along all the paths from the input to the output which comes the way of its implementation. Static CMOS is inherently susceptible to delay variation with input data, and hence, receives a low priority for wave pipelined digital design. On the other hand, ECL and CML, which are amenable to wave pipelining, lack the compactness and low power attributes of CMOS. In this paper we attempt to exploit wave pipelining in CMOS technology. We use a single generic building block in Normal Process Complementary Pass Transistor Logic (NPCPL), modeled after CPL, to achieve equal delay along all the propagation paths in the logic structure. An 8×8 b multiplier is designed using this logic in a 0.8 ?m technology. The carry-save multiplier architecture is modified suitably to support wave pipelining, viz., the logic depth of all the paths are made identical. The 1 mm×0.6 mm multiplier core supports a throughput of 400 MHz and dissipates a total power of 0.6 W. We develop simple enhancements to the NPCPL building blocks that allow the multiplier to sustain throughputs in excess of 600 MHz. The methodology can be extended to introduce wave pipelining in other circuits as well

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Nebulized spray pyrolysis provides a good low?temperature chemical route for preparing thin films of PbTiO3, (Pb0.9,La0.1)TiO3 and Pb(Zr0.52,Ti0.48)O3. The films are a? or c? axis oriented, with spherical grains of ?30 nm and give satisfactory P?E hysteresis loops. © 1995 American Institute of Physics.

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The technique of nebulized spray pyrolysis has been explored to find out whether oriented films of certain important oxides can be produced on single-crystal substrates by this relatively gentle method. Starting with acetylacetonate precursors, oriented films of metallic LaNiO3 containing nearly spherical grains (30 nm) have been obtained. Films of near-stoichiometric La4Ni3O10 and La3Ni2O7 showing metallic conductivity have been obtained by this method. This is indeed gratifying since it is difficult to prepare monophasic and stoichiometric bulk samples of these materials. Films of La2NiO4 show the expected semiconducting behavior. In the La-Cu-O system, starting with acetylacetonates, we have obtained films mainly comprising semiconducting La2Cu2O5, which is generally difficult to prepare in bulk form. More interestingly, nebulized spray pyrolysis gives excellent stoichiometric films of Pb(Zr0.52Ti0.48)O-3 consisting of nearly spherical grains (30 nm) which show ferroelectric behavior. The present investigation demonstrates that nebulized spray pyrolysis provides a useful and desirable route to deposite oriented films of complex oxide materials on single-crystal substrates.

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Devitrification of spray pyrolysed, amorphous ZrO2-Al2O3 solid solution produces nanocrystalline microstructures (grain sizes 10-20 nm). In this study, spray pyrolysed amorphous ZrO2-40 mol% Al2O3 powder displayed good sinterability during decomposition, after spraying, of the nitrate precursors up to 1023K. Hot pressing of fully pyrolysed, pre-sintered (more than 70% dense) pellets at 923K and 750 MPa produced an amorphous pellet with less than 2% porosity. The results indicate the possibility of producing dense, amorphous pellets that can be heat treated further to produce nanocrystalline microstructures conducive for superplasticity.

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Nebulized spray pyrolysis of metal-organic precursors in methanol solution has been employed to prepare powders of TiO2, ZrO2 and PbZr0.5Ti0.5O3 (PZT). This process ensures complete decomposition of the precursors at relatively low temperatures. The particles have been examined by scanning and transmission electron microscopy as well as X-ray diffraction. As prepared, the particles are hollow agglomerates of diameter 0.1-1.6 mu m, but after heating to higher temperatures the ultimate size of the particles comprising the agglomerates are considerably smaller (0.1 mu m or less in diameter) and crystalline.

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Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 1.55 mu m. The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices. Consequently, there has been tremendous upthrust in research activities of GaSb-based systems. As a matter of fact, this compound has proved to be an interesting material for both basic and applied research. At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication. This article presents an up to date comprehensive account of research carried out hitherto. It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility. An overview of the lattice, electronic, transport, optical and device related properties is presented. Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed. These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc. Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed. It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication. (C) 1997 American Institute of Physics.

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The aim of logic synthesis is to produce circuits which satisfy the given boolean function while meeting timing constraints and requiring the minimum silicon area. Logic synthesis involves two steps namely logic decomposition and technology mapping. Existing methods treat the two as separate operation. The traditional approach is to minimize the number of literals without considering the target technology during the decomposition phase. The decomposed expressions are then mapped on to the target technology to optimize the area, Timing optimization is carried out subsequently, A new approach which treats logic decomposition and technology maping as a single operation is presented. The logic decomposition is based on the parameters of the target technology. The area and timing optimization is carried out during logic decomposition phase itself. Results using MCNC circuits are presented to show that this method produces circuits which are 38% faster while requiring 14% increase in area.

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Aqueous solutions of acetates and nitrates of zinc and cobalt have been spray decomposed to study the production of extended solid solutions in the ZnO-CoO system. Examination of the products of a variety of synthesis conditions indicates that up to 70% CoO may be retained in the solid solution in the wurzite phase, even though a comparison of the equilibrium solubility in the phase diagram might be expected to favor the formation of a rock-salt-based solid solution.

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This article explores issues and challenges in the field of education in nanoscience and technology with special emphasis with respect to India, where an expanding programme of research in nano science and technology is in place. The article does not concentrate on actual curricula that are needed in nano science and technology education course. Rather it focuses on the desirability of nanoscience and technology education at different levels of education and future prospect of students venturing into this within the economic and cultural milieu of India. We argue that care is needed in developing the education programme in India. However, the risk is worth taking as the education on nanoscience and technology can bridge the man power gap not only in this area of technology but also related technologies of hardware and micro electronics for which the country is a promising destination at global level. This will also unlock the demographical advantage that India will enjoy in the next five decades.

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This paper analyses the influence of management on Technical Efficiency Change (TEC) and Technological Progress (TP) in the communication equipment and consumer electronics sub-sectors of Indian hardware electronics industry. Each sub-sector comprises 13 sample firms for two time periods.The primary objective is to determine the relative contribution of TP and TEC to TFP Growth (TFPG) and to establish the influence of firm specific operational management decision variables on these two components. The study finds that both the sub-sectors have strived and achieved steady TP but not TEC in the period of economic liberalisation to cope with the intensifying competition. The management decisions with respect to asset and profit utilization, vertical integration, among others, improved TP and TE in the sub-sectors. However, R&D investments and technology imports proved costly for TFP indicating inadequate efforts and/or poor resource utilisation by the management. Management was found to be complacent in terms of improving or developing their own technology as indicated by their higher dependence on import of raw materials and no influence of R&D on TP.

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ZrO2–Al2O3 powders were synthesized by spray pyrolysis. These powders were sintered at 1 GPa in the temperature range of 700–1100 °C. The microstructural evolution and densification are reported in this paper. The application of 1 Gpa pressure lowers the crystallization temperature from ∼850 to <700 °C. Similarly, the transformation temperature under 1 GPa pressure for γ → α–Al2O3 reduces from ∼1100 to 700–800 °C range, and that for t → m ZrO2 reduces from ∼1050 to 700–800 °C range. It was possible to obtain highly dense nanocrystalline ZrO2–Al2O3 composite at temperatures as low as 700 °C. The effect of high pressure on nucleation and transformation of phases is discussed.

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Numerical modeling of several turbulent nonreacting and reacting spray jets is carried out using a fully stochastic separated flow (FSSF) approach. As is widely used, the carrier-phase is considered in an Eulerian framework, while the dispersed phase is tracked in a Lagrangian framework following the stochastic separated flow (SSF) model. Various interactions between the two phases are taken into account by means of two-way coupling. Spray evaporation is described using a thermal model with an infinite conductivity in the liquid phase. The gas-phase turbulence terms are closed using the k-epsilon model. A novel mixture fraction based approach is used to stochastically model the fluctuating temperature and composition in the gas phase and these are then used to refine the estimates of the heat and mass transfer rates between the droplets and the surrounding gas-phase. In classical SSF (CSSF) methods, stochastic fluctuations of only the gas-phase velocity are modeled. Successful implementation of the FSSF approach to turbulent nonreacting and reacting spray jets is demonstrated. Results are compared against experimental measurements as well as with predictions using the CSSF approach for both nonreacting and reacting spray jets. The FSSF approach shows little difference from the CSSF predictions for nonreacting spray jets but differences are significant for reacting spray jets. In general, the FSSF approach gives good predictions of the flame length and structure but further improvements in modeling may be needed to improve the accuracy of some details of the Predictions. (C) 2011 The Combustion Institute. Published by Elsevier Inc. All rights reserved.

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Spray formation in ambient atmosphere from gas-centered swirl coaxial atomizers is described by carrying out experiments in a spray test facility. The atomizer discharges a circular air jet and an axisymmetric swirling water sheet from its coaxially arranged inner and outer orifices. A high-speed digital imaging system along with a backlight illumination arrangement is employed to record the details of liquid sheet breakup and spray development. Spray regimes exhibiting different sheet breakup mechanisms are identified and their characteristic features presented. The identified spray regimes are wave-assisted sheet breakup, perforated sheet breakup, segmented sheet breakup, and pulsation spray regime. In the regime of wave-assisted sheet breakup, the sheet breakup shows features similar to the breakup of two-dimensional planar air-blasted liquid sheets. At high air-to-liquid momentum ratios, the interaction process between the axisymmetric swirling liquid sheet and the circular air jet develops spray processes which are more specific to the atomizer studied here. The spray exhibits a periodic ejection of liquid masses whose features are dominantly controlled by the central air jet.