992 resultados para rapid congestion recovery
Resumo:
On two occasions Nursia abbreviata Bell, 1855 has been recovered from the stomachs of Batrochus grunniens (Linnaeus, 1758) caught with commercial fish. Nursia abbreviata has been previously recorded from Karachi by Alcock (1896). The present specimens afford the first subsequent record of the species from the region, and are represented by only two males recovered from fish stomachs. The only other species of the genus from Pakistan is N. Rubifera Muller, 1866 which is common in shore collections (Tirmizi and Kazmi, 1988). A brief description of the present material is given below.
Resumo:
The production of colour by homogenised fish material in a simplified sugar medium containing and acid indicator has been made use of for the rapid approximation of bacterial load in such products. The medium thus developed contains poptone, tryptone, yeast extract, sodium chloride and beef extract besides dextrose. The time of colour production is influenced to some extent by the level of sodium chloride in the medium and is almost always inversely proportional to the bacterial load in the homogenate.
Resumo:
Results of the studies carried out to elucidate the factors influencing colour production from the sugar medium used for the rapid approximation of bacterial counts in fishery products are reported. The effect of particle size, trace elements, salt soluble protein and non-protein fractions, rate of multiplication of bacteria, in the medium, surface bacteria and the rate of colour production by individual strains of bacteria were studied. It is observed that the best results are obtained when a sea-water homogenate is used.
Resumo:
The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632. 8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.
Resumo:
The crystal quality of 0.3-μm-thick as-grown epitaxial silicon-on-sapphire (SOS) was improved using solid-phase epitaxy (SPE) by implantation with silicon to 1015 ions/cm2 at 175 keV and rapid annealing using electron-beam heating, n-channel and p-channel transistormobilities increased by 31 and 19 percent, respectively, and a reduction in ring-oscillator stage delay confirmed that crystal defects near the upper silicon surface had been removed. Leakage in n-channel transistors was not significantly affected by the regrowth process but for p-channel transistors back-channel leakage was considerably greater than for the control devices. This is attributed to aluminum released by damage to the sapphire during silicon implantation. © 1985 IEEE
Resumo:
An asymptotic recovery design procedure is proposed for square, discrete-time, linear, time-invariant multivariable systems, which allows a state-feedback design to be approximately recovered by a dynamic output feedback scheme. Both the case of negligible processing time (compared to the sampling interval) and of significant processing time are discussed. In the former case, it is possible to obtain perfect. © 1985 IEEE.
Resumo:
Implants of boron into silicon which has been made amorphous by silicon implantation have a shallower depth profile than the same implants into silicon. This results in higher activation and restricted diffusion of the B implants after annealing, and there are also significant differences in the microstructure after annealing compared with B implants into silicon. Rapid isothermal heating with an electron beam and furnace treatments are used to characterize the defect structure as a function of time and temperature. Defects are seen to influence the diffusion of non-substitutional boron.
Resumo:
We have investigated a resonant refractive nonlinearity in a semiconductor waveguide by measuring intensity dependent phase shifts and bias-dependent recovery times. The measurements were performed on an optimized 750-μm-long AR coated buried heterostructure MQW p-i-n waveguide with a bandedge at 1.48 μm. Figure 1 shows the experimental arrangement. The mode-locked color center laser was tuned to 50 meV beyond the bandedge and 8 ps pulses with peak incident power up to 57 W were coupled into the waveguide. Some residual bandtail absorption remains at this wavelength and this is sufficient to cause carriers to be photogenerated and these give rise to a refractive nonlinearity, predominantly by plasma and bandfilling effects. A Fabry-Perot interferometer is used to measure the spectrum of the light which exits the waveguide. The nonlinearity within the guide causes self phase modulation (SPM) of the light and a study of the spectrum allows information to be recovered on the magnitude and recovery time of the nonlinear phase shift with a reasonable degree of accuracy. SPM spectra were recorded for a variety of pulse energies coupled into he unbiased waveguide. Figure 2 shows the resultant phase shift measured from the SPM spectra as a function of pulse energy. The relationship is a linear one, indicating that no saturation of the nonlinearity occurs for coupled pulse energies up to 230 pJ. A π phase shift, the minimum necessary for an all-optical switch, is obtained for a coupled pulse energy of 57 pJ while the maximum phase shift, 4 π, was measured for 230 pJ. The SPM spectra were highly asymmetric with pulse energy shifted to higher frequencies. Such spectra are characteristic of a slow, negative nonlinearity. This relatively slow speed is expected for the unbiased guide as the recovery time will be of the order of the recombination time of the photogenerated electrons, about 1 ns for InGaAsP material. In order to reduce the recovery time of the nonlinearity, it is necessary to remove the photogenerated carriers from the waveguide by a process other than recombination. One such technique is to apply a reverse bias to the waveguide in order to sweep the carriers out. Figure 3 shows the effect on the recovery time of the nonlinearity of applying reverse bias to the waveguide for 230 pJ coupled power. The recovery time was reduced from one much longer than the length of the pulse, estimated to be about 1 ns, at zero bias to 18 ± 3 ps for a bias voltage greater than -4 V. This compares with a value of 24 ps obtained in a bulk waveguide.