Novel mechanism for high speed growth of transparent and conducting tin oxide thin films by spray pyrolysis

A novel mechanism is proposed for efficient manipulation of transport forces acting on the droplets during spray pyrolytic deposition of thin films. A ‘‘burst mode’’ technique of spraying is used to adjust the deposition conditions so as to transport the droplets under the new mechanism. Transparent, conducting thin films of undoped tin oxide prepared by this method showed significant improvement in growth rate. The films are found to be of fairly good quality with optical transmission of 82% and sheet resistance of 35 Ω/☒. The films are chemically homogeneous and grow preferentially along 〈200〉 direction.

Synthesis of Novel Oxide Pyrochlores, A2BB?O7 (A = La, Nd; BB? = Pb, Sn, Bi), by Alkali Melt Route

Oxide pyrochlores of the formula A2BB? O7 (A = La, Nd; BB? = Pb, Sn, Bi) have been synthesized by a low-temperature ambient-pressure route employing KOH melts. All the compositions, including La2Bi2O7 and its strontium-substituted derivatives, La2-xSrxBi2O7-?, are deeply colored insulators, confirming that a metallic ground state is not achieved for Pb(IV) and Bi(IV/V) oxides with the pyrochlore structure.

Temperature dependence of hydrogen evolution reaction on nickel oxide electrode in sealed nickel/cadmium cells

The impedance of sealed nickel/cadmium cells around a cell e.m.f. of 0.0 V was measured at five different temperatures between � 10 and +30 °C. The results show that the behaviour is similar at all temperatures. Based on the experimental results, the relation between charge-transfer resistance (Rct) and temperature (T) has been established for the Volmer reaction. Further, the value of cathodic transfer coefficient (?) has been estimated.

Synthesis and photocatalytic properties of AgLi1/3Ru2/3]O-2: A new delafossite oxide

A new delafossite oxide, AgLi1/3Ru2/3]O-2, synthesized by ion-exchanging interlayer-Li+ with Ag+ in layered Li2RuO3, is reported. The transformation of layered Li2RuO3 (monoclinic, space group C2/c) to AgLi1/3Ru2/3]O-2 possessing a delafossite structure (space group R (3) over barm) has been established with powder X-ray diffraction. The successful conversion of LiLi1/3Ru2/3]O-2 to AgLi1/3Ru2/3]O-2 is further confirmed by EDAX analysis. The diffuse reflectance spectrum of AgLi1/3Ru2/3]O-2 shows broad absorption in the UV-visible region suggesting its use as a photocatalyst. The photocatalytic activity of AgLi1/3Ru2/3]O-2 has been investigated by degrading various dyes. It showed significant photocatalytic activity for dye degradation both under UV and solar radiation. (C) 2010 Elsevier B.V. All rights reserved.

Poly-ols Based Sol-Gel Synthesis of Zinc Oxide Thin Films

We demonstrate that the structural and optical properties of a sol-gel deposited zinc oxide thin film can be tuned by varying the composition of the sol, consisting of ethylene glycol and glycerol. A systematic study of the effect of the composition of sol on the mean grain size, thickness, and defect density of the zinc oxide film is presented. About 20% glycerol content in the sol is observed to improve the quality of the film, as evaluated by X-ray diffraction and photoluminescence studies. Thus, optimizing the composition of the sol for about 60 nm thick ZnO film using 20% glycerol resulted in the zinc oxide film that is about 80% transparent in visible spectrum, exhibiting electrical resistivity of about 18 Omega cm and field-effect mobility of 0.78 cm(2)/(V s). (C) 2010 The Electrochemical Society. DOI: 10.1149/1.3515894] All rights reserved.

Electrochemical preparation of few layer-graphene nanosheets via reduction of oriented exfoliated graphene oxide thin films in acetamide-urea-ammonium nitrate melt under ambient conditions

Electrochemical reduction of exfoliated graphene oxide, prepared from pre-exfoliated graphite, in acetamide-urea-ammonium nitrate ternary eutectic melt results in few layer-graphene thin films. Negatively charged exfoliated graphene oxide is attached to positively charged cystamine monolyer self-assembled on a gold surface. Electrochemical reduction of the oriented graphene oxide film is carried out in a room temperature, ternary molten electrolyte. The reduced film is characterized by atomic force microscopy (AFM), conductive AFM, Fourier-transform infrared spectroscopy and Raman spectroscopy. Ternary eutectic melt is found to be a suitable medium for the regulated reduction of graphene oxide to reduced graphene oxide-based sheets on conducting surfaces. (C) 2010 Elsevier B.V. All rights reserved.

Bi2W1–xCuxO6–x(0.7[less-than-or-eq]x[less-than-or-eq]0.8): a new oxide-ion conductor

Anion-deficient Aurivillius phases of the general formula, Bi2Wi-xCuxO6-2x, possessing orthorhombic/tetragonal Bi2WO6-like structures, have been synthesized by quenching the oxide melts. The tetragonal phase stabilized for the compositions 0.7 less-than-or-equal-to x less-than-or-equal-to 0.8 is a good oxide-ion conductor in the temperature range 500-900 K, the x = 0.7 composition exhibiting the highest conductivity in the series.

Chemical Approaches to the Design of Oxide Materials.

Chemical methods of synthesis play a crucial role in designing and discovering new and novel materials and in providing less cumbersome methods for preparing known materials. Chemical methods also enable the synthesis of metastable materials which are otherwise difficult to prepare. In this presentation, the various innovative chemical methods of synthesising oxide materials will be briefly reviewed with emphasis on soft-chemical routes. Electrochemical synthesis, ion-exchange method, alkali-flux method and some of the interaction reactions will be highlighted, besides topochemical aspects of solid state synthesis. Cuprate superconductors as well as intergrowth structures will also be examined.

Combustion synthesis of oxide materials for nuclear waste immobilization

Oxide materials like perovskite, zirconolite, hollandite, pyrochlore, NASICON and sphene which are used for nuclear waste immobilization have been prepared by a solution combustion process. The process involves the combustion of stoichiometric amount of corresponding metal nitrates and carbohydrazide/tetraformyl trisazine/diformyl hydrazide at 450 degrees C. The combustion products have been characterized using powder X-ray diffraction, infrared spectroscopy, and Si-29 MAS-NMR. The fine particle nature of the combustion derived powders has been studied using density, particle size, BET surface area measurements and scanning electron microscopy. Sintering of combustion derived powder yields 85-95% dense ceramics in the temperature range 1000 degrees-1300 degrees C.

Growth and applications of superconducting and nonsuperconducting oxide epitaxial films

Growth and characterization of high-temperature-superconducting YBa2Cu3O7 and several metallic-oxide thin films by pulsed laser deposition is described here. An overview of substrates employed for epitaxial growth of perovskite-related oxides is presented. Ag-doped YBa2Cu3O7 films grown on bare sapphire are shown to give T-c = 90 K, critical current > 10(6) A/cm(2) at 77 K and surface resistance = 450 mu Omega. Application of epitaxial metallic LaNiO3 thin films as an electrode for ferroelectric oxide and as a normal metal layer barrier in the superconductor-normal metal-superconductor (SNS) Josephson junction is presented. Observation of giant magnetoresistance (GMR) in the metallic La0-6Pb0-4MnO3 thin films up to 50% is highlighted.

Soft-chemical routes to synthesis of solid oxide materials

We describe three different families of metal oxides, viz., (i) protonated layered perovskites, (ii) framework phosphates of NASICON and KTiOPO4 (KTP) structures and (iii) layered and three-dimensional oxides in the H-V-W-O system, synthesized by 'soft-chemical' routes involving respectively ion-exchange, redox deinteracalation and acid-leaching from appropriate parent oxides. Oxides of the first family, HyA2B3O10(A = La/Ca; B = Ti/Nb), exhibit variable Bronsted acidity and intercalation behaviour that depend on the interlayer structure. V2(PO4)3 prepared by oxidative deintercalation from Na3V2(PO4)3 is a new host material exhibiting reductive insertion of lithium/hydrogen, while K0.5Nb0.5 M0.5OPO4(M = Ti, V) are novel KTP-like materials exhibiting second harmonic generation of 1064 nm radiation. HxVxW1-xO3 for x = 0.125 and 0.33 possessing alpha-MoO3 and hexagonal WO3 structures, prepared by acid-leaching of LiVWO6, represent functionalized oxide materials exhibiting redox and acid-base intercalation reactivity.

Soft chemical synthesis of new layered and three-dimensional oxide hydrates, hxVxW1-xO3×yH2O, related to WO3×2 H2O and WO3. times.1/3 H2O

Two new vanadium-tungsten oxide hydrates of the formulas, H0.125V0.125W0.875O3.1.5H2O (I) and Ho.33V0.33W0.67O3.1/3H2O (II), have been synthesized by acid-leaching of LiVWO6 with aqueous HNO3/HCl. While phase I obtained by treatment of LiVWO6 with dilute HNO3/HCl possesses an orthorhombic structure (a = 7.77(3), b = 13.87(6), c = 7.44(3) angstrom) related to WO3.2H2O, phase II, prepared by refluxing LiVWO6 with concentrated HNO3, is isostructural with WO3.1/3H2O. Dehydration of II around 330-degrees-C yields a hexagonal phase (III, a = 7.25(4), c = 7.74(3) angstrom) isotypic with hexagonal WO3. Both land III exhibit redox and acid-base intercalation reactivity characteristic of layered and tunnel structures.

Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing

The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta2O5) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic beta-phase Ta2O5. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta2O5/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was < 20 nA cm(-2) at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was Poole-Frenkel. (C) 2010 Elsevier Ltd. All rights reserved.

8-(3-methylphenoxy)-16H-dinaphtho[2,1-d;1',2'-g][1,3,2]dioxaphosphocine 8-oxide

In the title compound, C28H21O4P, the eight-membered heterocyclic dioxaphosphocine ring has a distorted boat conformation, with the phosphoryl O atom axial and the phenoxy group equatorial. The P=O distance is 1.451 (1) Angstrom and the average length of the three P-O bonds is 1.573 (1) Angstrom. The phenyl ring is nearly perpendicular to both naphthalene planes, making dihedral angles of 91.30 (3) and 97.65 (5)degrees with them. The angle between the two naphthalene planes is 67.73 (3)degrees. The crystal structure is stabilized by van der Waals interactions.