Photoluminescence mechanism of Si nanocrystals embedded in SiO2 matrix

The interface state recombination effect from the quantum confinement effect in PL signals from the SRO material system was studied. The results show that the larger the size of Si NCs, the more beneficial for the interface state recombination process to surpass the quantum confinement process, in support of Qin's model.

SOI-based thermo-optic waveguide switch matrix with spot size converters

A SOI-based thermo-optic waveguide switch matrix worked at 1.55 mu m, integrated with spot size converters is designed and fabricated for the first time. The insertion loss and polarization dependent loss are less than 13dB and 2dB, respectively. The extinction ratio is larger than 19dB. The response time is less than 5 mu s and the power consumption of the switch cell is about 200mW.

Silicon-on-insulator based optical waveguide and integrated switch matrix

zhangdi于2010-03-29批量导入

Performance of an embedded optical vector matrix multiplication processor architecture

An embedded architecture of optical vector matrix multiplier (OVMM) is presented. The embedded architecture is aimed at optimising the data flow of vector matrix multiplier (VMM) to promote its performance. Data dependence is discussed when the OVMM is connected to a cluster system. A simulator is built to analyse the performance according to the architecture. According to the simulation, Amdahl's law is used to analyse the hybrid opto-electronic system. It is found that the electronic part and its interaction with optical part form the bottleneck of system.

Deterministic Column-Based Matrix Decomposition

In this paper, we propose a deterministic column-based matrix decomposition method. Conventional column-based matrix decomposition (CX) computes the columns by randomly sampling columns of the data matrix. Instead, the newly proposed method (termed as CX_D) selects columns in a deterministic manner, which well approximates singular value decomposition. The experimental results well demonstrate the power and the advantages of the proposed method upon three real-world data sets.

Sol-gel matrix modified microstructured optical fibre towards a fluoride sensitive optical probe

In this article, we report an optical fluoride probe based on microstructured polymer optical fibers (MPOFs) which is modified with morin-Al complex doped silica gel film. This probe is fabricated by sol-gel fluxion coating process. Sol solution doped with morin-Al is directly inhaled into array holes of MPOF and then forms morin-Al-gel matrix film in them. The sensing probe shows different fluorescence intensity to different fluoride ion concentrations in the aqueous solution. The range of response is 550 mmol/L, under the condition of pH 4.6. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.

THE MATRIX ANALYSIS FOR AN OPTICAL FREE-SPACE SWITCHING NETWORK AND AN OPTICAL CROSSOVER NETWORK WITH 4-FUNCTION INTERCHANGE NODES

A matrix analysis for free-space switching networks, such as perfect shuffle-exchange omega, crossover and Banyan is presented. On the basis of matrix analysis, the equivalence of these three switching networks and the route selection between input and output ports are simply explained. Furthermore, an optical crossover switching network, where MQW SEED arrays are used as electrically addressed four-function interchange nodes, is described and the optical crossover interconnection of 64 x 64, and high-speed four-function, interchange nodes is demonstrated in the experiment.

MATRIX DESCRIPTION OF DYNAMIC HOLZ DIFFRACTION TESTED ON THE STRAINED LAYER SUPERLATTICE SI/GESI

A matrix formulation has been developed and applied to simulate large-angle convergent-beam electron diffraction (LACBED) patterns from the Si/GexSi1-x strained layer superlattice (SLS). Good quantitative agreement has been achieved between experimental and simulated patterns. By utilizing dynamical HOLZ line patterns, we demonstrate that an accuracy of better than 0.1% can be achieved in the determination of the averaged lattice constant of a SLS, and the averaged number of layers of atoms within one period of SLS can be determined up to a single monolayer.

THE DEPENDENCE OF THE INVERSION LAYER THICKNESS ON THE FILM THICKNESS IN THIN-FILM SOI STRUCTURES

The dependence of the inversion-layer thickness on the film thickness in thin-film SOI structure is analyzed theoretically by using computer simulation. A new concept and parameter, the critical thickness of thin film all-bulk inversion, is introduced for the design of thin-film MOS/SOI devices. It is necessary to select the film thickness T(s1) close to the all-bulk strong inversion critical thickness in order to get high-speed and high-power operation of ultra-thin film MOS/SOI devices.