875 resultados para lithium ion battery


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A microchip thermocycler, fabricated from silicon and Pyrex #7740 glass, is described. Usual resistive heating has been replaced by induction heating, leading to much simpler fabrication steps. Heating and cooling rates of 6.5 and 4.2 degreesC/s, respectively have been achieved, by optimising the heater dimensions and heating frequency (similar to200 kHz). Four devices are mounted on a heater, resulting in low power consumption (similar to 1.4 W per device on the average). Using simple on-off electronic temperature control, a temperature stability within -0.2 degreesC is achieved. Features such as induction heating, good temperature control, battery operation, and low power consumption make the device suitable for portable applications, particularly in polymerase chain reaction (PCR) systems. (C) 2002 Elsevier Science B.V. All rights reserved.

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Glass nanocomposites in the system (100 - x)Li2B4O7-xSrBi(2)Ta(2)O(9) (0 less than or equal to x less than or equal to 22.5, in molar ratio) were fabricated via a melt quenching technique followed by controlled heat-treatment. The as-quenched samples were confirmed to be glassy and amorphous by differential thermal analysis (DTA) and X-ray powder diffraction (XRD) techniques, respectively. The phase formation and crystallite size of the heat-treated samples (glass nanocomposites) were monitored by XRD and transmission electron microscopy (TEM). The relative permittivities (epsilon(tau)') of the glass nanocomposites for different compositions were found to lie in between that of the parent host glass (Li2B4O7) and strontium bismuth tantalate (SBT) ceramic in the frequency range 100 Hz-40 MHz at 300 K, whereas the dielectric loss (D) of the glass nanocomposite was less than that of both the parent phases. Among the various dielectric models employed to predict the effective relative permittivity of the glass nanocomposite, the one obtained using the Maxwell's model was in good agreement with the experimentally observed value. Impedance analysis was employed to rationalize the electrical behavior of the glasses and glass nanocomposites. The pyroelectric response of the glasses and glass nanocomposites was monitored as a function of temperature and the pyroelectric coefficient for glass and glass nanocomposite (x = 20) at 300 K were 27 muC m(-2) K-1 and 53 muC m(-2) K-1, respectively. The ferroelectric behavior of these glass nanocomposites was established by P vs. E hysteresis loop studies. The remnant polarization (P-r) of the glass nanocomposite increases with increase in SBT content. The coercive field (E-c) and P-r for the glass nanocomposite (x = 20) were 727 V cm(-1) and 0.527 muC cm(-2), respectively. The optical transmission properties of these glass nanocomposites were found to be composition dependent. The refractive index (n = 1.722), optical polarizability (am = 1.266 6 10 23 cm 3) and third-order nonlinear optical susceptibility (x(3) = 3.046 6 10(-21) cm(3)) of the glass nanocomposite (x = 15) were larger than those of the as-quenched glass. Second harmonic generation (SHG) was observed in transparent glass nanocomposites and the d(eff) for the glass nanocomposite (x = 20) was found to be 0.373 pm V-1.

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Glass nanocomposites in the system (1-x)Li2B4O7-xBi(2)WO(6) (0 less than or equal to x less than or equal to 0.35, in molar ratio) were fabricated by splat quenching technique. The as-quenched samples were X-ray amorphous. Differential Thermal Analyses (DTA) confirmed their glassy nature. The composites on heat-treatment at 720 K yielded monophasic crystalline bismuth tungstate in lithium borate glass matrix. The average size and the spherical nature of the dispersed crystallites were assessed via High Resolution Transmission Electron Microscopy (HRTEM). The dielectric constants (epsilon(r)) of both the as-quenched and post heat-treated composites were found to increase with increase in x (bismuth tungstate content) at all the frequencies (100 Hz-40 MHz) in the temperature range 300 K-870 K. While the dielectric loss (D) decreased with increasing x. The pyroelectric coefficients of the as-quenched (consisting 20 nm sized crystallites) and 720 K heat-treated sample (x = 0.3) were determined as a function of temperature (300 K-873 K) and the values obtained at room temperature were 20 and 60 muC/m(2) K respectively. The as-quenched and heat-treated (720 K) glass nanocomposites exhibited ferroelectric (P Vs E) hysteresis loops. The remnant polarization and coercive field of the heat-treated glass nanocomposite at 300 K were respectively 2.597 muC/cm(2) and 543 V/cm. These glass nanocomposites were birefringent in the 300-873 K temperature range.

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LixCoOy films with x < 1 and y > 2 have been prepared by radio-frequency (rf) sputtering from high temperature (HT) LiCoO2 targets. Their structures have been examined with high resolution electron microscopy. Conductivities have been studied between 77 and 400 K. The electrochemical behaviour of film electrodes have been investigated with Li/LiClO4-PC/LixCoOy cells. The annealed films consist of nanocrystalline domains with amorphous boundaries. Electrical conductivities appear to arise from variable-range hopping (VRH) of holes. The films form good electrodes with operating potentials between 2.7 and 3.8 V. The observations have been discussed on the basis of a tentative and heuristic molecular orbital based energy band diagram. (C) 2002 Published by Elsevier Science Ltd.

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Two new classes of mono- and bis-D-pi-A cryptand derivatives with a flexible and a rigid cryptand core have been synthesized. The linear and nonlinear optical properties of these molecules are probed. The three dimensional cavity of the cryptand moiety has been utilized to modulate the SHG intensity to different extents in solution with metal ion inputs such as Ni-II,Cu-II,Zn-II, and Cd-II. We also report that decomplexation events can be used to reversibly modulate their NLO responses.

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Transparent glasses in the system (1−x)Li2B4O7–xBi2WO6 (0≤x≤0.35) were prepared via melt quenching technique. Differential thermal analysis was employed to characterize the as-quenched glasses. Glass-ceramics with high optical transparency were obtained by controlled heat-treatment of the glasses at 720 K for 6 h. The amorphous nature of the as-quenched glass and crystallinity of glass-ceramics were confirmed by X-ray powder diffraction studies. High resolution transmission electron microscopy (HRTEM) shows the presence of nearly spherical nanocrystallites of Bi2WO6 in Li2B4O7 glass matrix. Capacitance and dielectric loss measurements were carried out as a function of temperature (300–870 K) in the frequency range 100 Hz–40 MHz. Impedance spectroscopy employed to rationalize the electrical behavior of glasses and glass-ceramics suggest the coexistence of electronic and ionic conduction in these materials. The thermal activation energies for the electronic conduction and ionic conduction were also estimated based on the Arrhenius plots.

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Thermodynamic properties of Li3N dissolved in the molten LiCl salt at 900 K were explored using electrochemical methods. It was difficult to determine precisely the decomposition voltage of Li3N dissolved in the molten salt by cyclic voltammetry. The oxidation wave of N3– ion could not be located with high accuracy. However, the lithium activity of the Pb-Li alloy in equilibrium with the molten salt containing dissolved Li3N under nitrogen atmosphere could be measured electrochemically with high accuracy using the Li/Li + reference electrode. Under the conditions used in this study, the potential of the Li-Pb electrode is equal to the decomposition voltage of Li3N. The activity of Li3N in molten LiCl was determined for anionic fractions of N3– ranging from xN3– = 10–4 to 0.028. The nitride ion concentration in the salt was determined by chemical titration. The activity coefficient of the Li3N at high dilution was found to be very low, around 10–4. The activity coefficient increases sharply with composition and has a value of 0.25 at xN3– = 0.028. ©2001 The Electrochemical Society. All rights reserved.

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As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe(+) ion beam to an ion fluence of about 10(16) ions-cm(-2). Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti(5)Si(3) intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

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Detailed small angle neutron scattering ( SANS) studies were carried out with the aqueous vesicular (unilamellar) suspension of dimeric ion-paired lipids (2a-2c) for spacer lengths corresponding to n-values of 2, 6 and 10 and monomeric ion-paired lipid (3) below and above the phase transition temperature of each amphiphile. The vesicular structure strongly depends on the spacer chain length. The mean vesicle size is smallest for the lipid with a short spacer, n = 3 and it increases with the increase in the spacer chain length. The bilayer thickness also decreases with the increase in the spacer chain length. The size polydispersity increases with the increase in the spacer chain length (n-value).

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Aluminum oxide films have been prepared by ion assisted deposition using argon ions with energy in the range 300 to 1000 eV and current density in the range 50 to 220 μA/cm2. The influence of ion energy and current density on the optical and structural properties has been investigated. The refractive index, packing density, and extinction coefficient are found to be very sensitive to the ion beam parameters and substrate temperatures. The as-deposited films were found to be amorphous and could be transformed into crystalline phase on annealing. However, the crystalline phases were different in films prepared at ambient and elevated substrate temperatures.

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Thin films of Ceria, Titania and Ziroonia have been prepared using Ion Assisted Deposition(IAD). The energy of ions was varied between 0 and 1 keV and current densities up to 220 μA/cm were used. It was found that the stress behaviour is dependent on ion species, i.e. Argon or Oxygen, ion energy and current density and substrate temperature apart from the material. While oeria files showed tensile stresses under the influence of argon ion bombardment at ambient temperature, they showed a sharp transition from tensile to compressive stress with increase in substrate temperature. When bombarded with oxygen ions they showed a transition from tensile to compressive stress with increase in energy. The titania films deposited with oxygen ions, on the other hand showed purely tensile stresses. Zirconia films deposited with oxygen ions, however, showed a transition from tensile to compressive stress.

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As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe+ ion beam to an ion fluence of about 1016 ions-cm−2. Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti5Si3 intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

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We report the synthesis of thin films of B–C–N and C–N deposited by N+ ion-beam-assisted pulsed laser deposition (IBPLD) technique on glass substrates at different temperatures. We compare these films with the thin films of boron carbide synthesized by pulsed laser deposition without the assistance of ion-beam. Electron diffraction experiments in the transmission electron microscope shows that the vapor quenched regions of all films deposited at room temperature are amorphous. In addition, shown for the first time is the evidence of laser melting and subsequent rapid solidification of B4C melt in the form of micrometer- and submicrometer-size round particulates on the respective films. It is possible to amorphize B4C melt droplets of submicrometer sizes. Solidification morphologies of micrometer-size droplets show dispersion of nanocrystallites of B4C in amorphous matrix within the droplets. We were unable to synthesize cubic carbon nitride using the current technique. However, the formation of nanocrystalline turbostratic carbo- and boron carbo-nitrides were possible by IBPLD on substrate at elevated temperature and not at room temperature. Turbostraticity relaxes the lattice spacings locally in the nanometric hexagonal graphite in C–N film deposited at 600 °C leading to large broadening of diffraction rings.

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The ferroelectric Pb(Zr0.53Ti0.47)O-3 (PZT) and SrBi2Ta2O9 (SBT) thin films were prepared by laser ablation technique. The dielectric analysis, capacitance-voltage, ferroelectric hysteresis and DC leakage current measurements were performed before and after 50 MeV Li3+ ion irradiation. In both thin films, the irradiation produced some amount of amorphisation, considerable degradation in the ferroelectric properties and change in DC conductivity. On irradiation of these thin films, the phase transition temperature [T-c] of PZT decreased considerably from 628 to 508 K, while SBT exhibited a broad and diffuse transition with its T-c decreased from 573 to 548 K. The capacitance-voltage curve at 100 kHz showed a double butterfly loop with a large decrease in the capacitance and switching voltage. There was decrease in the ferroelectric hysteresis loop, remanant polarisation and coercive field. After annealing at a temperature of 673 K for 10 min while PZT partially regained the ferroelectric properties, while SBT did not. The DC conductivity measurements showed a shift in the onset of non-linear conduction region in irradiated SBT. The degradation of ferroelectric properties of the irradiated thin films is attributed to the irradiation-induced partial amorphization and the pinning of the ferroelectric domains by trapped charges. The regaining of properties after annealing is attributed to the thermal annealing of the defects generated during the irradiation. (C) 2003 Elsevier Science B.V. All rights reserved.