Excited state dynamics of the Ho3+ ions in holmium singly doped and holmium, praseodymium-codoped fluoride glasses

The deactivation of the two lowest excited states of Ho3+ was investigated in Ho3+ singly doped and Ho3+, Pr3+-codoped fluoride (ZBLAN) glasses. We establish that 0.1-0.3 mol % Pr3+ can efficiently deactivate the first excited (I-5(7)) state of Ho3+ while causing a small reduction of similar to 40% of the initial population of the second excited (I-5(6)) state. The net effect introduced by the Pr3+ ion deactivation of the Ho3+ ion is the fast recovery of the ground state of Ho3+. The Burshstein model parameters relevant to the Ho3+-> Pr3+ energy transfer processes were determined using a least squares fit to the measured luminescence decay. The energy transfer upconversion and cross relaxation parameters for 1948, 1151, and 532 nm excitations of singly Ho3+-doped ZBLAN were determined. Using the energy transfer rate parameters we determine from the measured luminescence, a rate equation model for 650 nm excitation of Ho3+-doped and Ho3+, Pr3+-doped ZBLAN glasses was developed. The rate equations were solved numerically and the population inversion between the I-5(6) and the I-5(7) excited states of Ho3+ was calculated to examine the beneficial effects on the gain associated with Pr3+ codoping. (c) 2007 American Institute of Physics.

Synthesis and electrical characterization of tungsten doped Pb(Zr0.53Ti0.47)O-3 ceramics obtained from a hybrid process

Pure and W-doped PZT ceramics (PZT and PZTW) were prepared by a hybrid process consisting in the association of polymeric precursor and partial oxalate methods. The phase formation was investigated by simultaneous thermal analysis (TG/DSC) and X-ray diffraction (XRD). The effect of W doping PZT and their electrical properties was evaluated. Substitution of W by Ti leads to an increase of Curie temperature and broadening of dielectric constant. A typical hysteresis loop was observed at room temperature and the remnant polarization was increased with the content of W. (c) 2007 Elsevier B.V. All rights reserved.

GIGAHERTZ CONDUCTIVITY OF PRESSED PELLETS OF CLO4--DOPED POLY(3-METHYLTHIOPHENE) OBTAINED FROM ELECTRON-SPIN-RESONANCE MEASUREMENTS

Gigahertz conductivity of pressed pellets of ClO4--doped poly( 3-methylthiophene) can be readily obtained from the asymmetry ratio (A / B) of the electron spin resonance line using Dyson's theory. The measurements were performed in three different frequencies, 1.3, 9.4, and 35 GHz. The temperature dependence of the gigahertz conductivity is sensitive to the heating rate, probably due to the ordering of the randomly assembled anions. (C) 1994 Academic Press, Inc.

Mechanism of conduction in doped polyaniline

The conductivity of H2SiF6-doped emeraldine polymers is studied as a function of temperature in the range 50 less than or equal to T less than or equal to 180 K. The dopant concentration of the samples varies between 0.1 M and 1.0 M. The temperature dependence of the do electrical conductivity gives evidence for a transport mechanism based on variable-range hopping in three dimensions. Using Mott's formula for the de conductivity, physically meaningful values of the density of states at the Fermi energy, the hopping energy and hopping distance are calculated.

Spectroscopic properties of lead fluoroborate glasses doped with ytterbium

A new lead fluoroborate glass (PbO-PbF2-B2O3) doped with ytterbium (Yb:PbFB) is presented. Samples with different concentrations of Yb3+ were produced and had their emission cross-sections, fluorescence lifetimes and minimum pump intensities determined. They have high refractive index of 2.2 and a density of 4.4 g/cm(3). For a doping level of 1.153x10(20) ions/cm(3), the fluorescence lifetime, after excitation at 968 nm, is 0.81 ms, which is comparable to Yb:tellurite laser glass. Also, an emission band at 1022 nm is measured with emission cross-section of approximately 1.07x10(-20) cm(2) and fluorescence effective linewidth of 60 nm, which is comparable to Yb:phosphate laser glass. (C) 2001 Optical Society of America.

Structure and luminescence of Eu3+-doped class I siloxane-poly(ethylene glycol) hybrids

Transparent, flexible, and luminescent EU3+-doped siloxane-poly(ethylene glycol) (PEG) nanocomposites have been obtained by the sol-gel process. The inorganic (siloxane) and organic PEG phases are usually linked by weak bonds (hydrogen bonds or van der Waals forces), and small-angle X-ray scattering (SAXS) measurements suggest that the structure of these materials consists of fractal siloxane aggregates embedded in the PEG matrix. For low Eu3+ contents, n = 300 and n = 80, the aggregates are small and isolated and their fractal dimensions are 2.1 and 1.7, respectively. These values are close to those expected for gelation mechanisms consisting of reaction-limited cluster-cluster aggregation (RLCCA) and diffusion-limited cluster-cluster aggregation (DLCCA). For high Eu3+ content, SAYS results are consistent with a two-level structure: a primary level of siloxane aggregates and a second level, much larger, formed by the coalescence of the primary ones. The observed increase in the glass transition temperature for increasing Eu3+ content is consistent with the structural model derived from SAXS measurements. Extended X-ray absorption fine structure (EXAFS) and luminescence spectroscopy measurements indicate that under the experimental conditions utilized here Eu3+ ions do not strongly interact with the polymeric phase.

Experimental and theoretical study of the ferroelectric and piezoelectric behavior of strontium-doped PZT

Theoretical data using ab initio perturbed ion calculation were compared with ferroelectric and piezoelectric experimental data of strontium doped PZT. Various concentrations of SrO in PZT at constant temperature and sintering time were carried out. Experimental results, such as the remanent polarization, P-R of 6.9-8.9 muC/Cm-2, the coercive field, E-C of 6.6-7.8 kVcm, and the planar coupling factor, Kp of 0.45-0.53, were compared with the energy of Zr4+ and Ti4+ ion dislocation and the lattice interaction energy which show that strontium increment in PZT alter the energies and increase the values of piezoelectric and ferroelectric variables. Calculations of lattice energy of the rhombohedral phase show that a phase non-stability is coincident with increasing experimental values of the P-R, E-C and Kp. (C) 2001 Elsevier B.V. Ltd. All rights reserved.

Influence of the rare-earths oxides doped on the SnO2CoOMnO2Ta2O5 varistor system

The tin dioxide is an n-type semiconductor, which exhibits varistor behavior with high capacity of absorption of energy, whose function is to restrict transitory over-voltages without being destroyed, when it is doped with some oxides. Varistors are used in alternated current fields as well as in continuous current, and it can be applied in great interval of voltages or in great interval of currents. The electric properties of the varistor depend on the defects that happen at the grain boundaries and the adsorption of oxygen. The (98.90-x)%SnO2.0.25%CoO+0.75%MnO2+0.05%Ta2O5+0.05%Tr2O3 systems, in which Tr=La or Nd. Current-voltage measurements were accomplished for determination of the non-linear coefficient were studied. SEM microstructure analysis was made to evaluate the microstructural characteristics of the systems. The results showed that the rare-earth oxides have influenced the electrical behavior presented by the system. (C) 2002 Kluwer Academic Publishers.

Small-angle X-ray scattering and X-ray absorption near-edge structure study of iron-doped siloxane-polyoxyethylene nanocomposites

The local and medium-range structures of siloxane-POE hybrids doped with Fe(III) ions and prepared by the sol-gel process were investigated by X-ray absorption near-edge structure (XANES)/extended X-ray absorption fine structure (EXAFS) and small-angle X-ray scattering (SAXS), respectively. The experimental results show that the structure of these composites depends on the doping level. EXAFS data reveal that, for low doping levels ([O]/[Fe] > 40, oxygens being of the ether-type of the POE chains), Fe(III) ions are surrounded essentially by a shell of chlorine atoms, suggesting the formation of FeCl4- anions. At high doping levels ([O]/[Fe] < 20), Fe(III) ions interacts mainly with oxygen atoms and form FeOx species. The relative proportion of FeOx species increases with iron concentration, this result being consistent with the results of SAXS measurements showing that increasing iron doping induces the formation of iron-rich nanodomains embedded in the polymer matrix.

Field-dependent conductivity at low electric fields in pressed pellets of doped poly (3-methylthiophene): evidence of charge-density wave depinning

Field-dependent conductivity at low electric fields was observed from low to room temperature in pressed pellets of doped poly(3-methylthiophene). The room temperature data showed good agreement with Bardeen's theory of charge-density wave depinning and the values of the parameters obtained are consistent with a strong electron-phonon interaction as expected for quasi-one dimensional systems. (C) 2003 Elsevier B.V. Ltd. All rights reserved.

Electrical transport properties of doped poly (p-phenylene)

An experimental study of the temperature dependent dc electrical conductivity of doped poly (p-phenylene) in the range of 50-300 K has been presented. The results have been analyzed in the framework of some hopping models. We have observed that hopping models are not consistent with the temperature dependence of the conductivity data over the entire temperature range of measurement. We find that the logarithmic conductivity is proportional to T-beta, wherethe exponent beta is independent of temperature. It is shown that the most probable transport process in this material for the entire range of temperature is due to multiphonon-assisted hopping of the charge carriers that interact weakly with phonons. The parameters obtained from the fits of the experimental data to this model appear reasonable.

Enhanced electrical property of nanostructured Sb-doped SnO2 thin film processed by soft chemical method

The effect of the Sb addition on the microstructural and electrical conductivity of the SnO2 thin film was studied in this work. Experimental results show that the Sb addition allowed to control the grain size and electrical conductivity of the SnO2 thin film, resulting in a nanostructured material. The nanostructured Sb-doped SnO2 thin films present high electrical conductivity, even in the presence of high porosity, supporting the hypothesis that nanostructured material must possess strong electrical conductivity. This work involves important aspects that can be applied to the development of high performance transparent conducting thin film. (C) 2003 Elsevier B.V. All rights reserved.

Effect of substitution of [Pd(PPh3)(4)] by related compounds as catalysts in reactions of organic syntheses

The effect of substitution of [Pd(PPh3)(4)], which is unstable in air, by complexes of the type [MCl2L2] (M = Pd, Pt; L = AsPh3, SbPh3), [PdL4](L = PPh3, AsPh3, SbPh3) and [NiX2(PPh3)(2)] on the syntheses of thioethers, acetylenes and ketones is described.

Blue cooperative luminescence properties in Yb3+ doped GeO2-PbO-Bi2O3 vitreous system for the production of thin films

Germanate glasses are of interest for optoelectronic applications because they combine high mechanical strength, high chemical durability and temperature stability with a large transmission window (400 to 4500 nm) and high refractive index (2.0). GeO2-PbO-Bi2O3 glasses doped with Y-b(3+) were fabricated by melting powders in a crucible and then pouring them in a brass mold. Energy Dispersive Spectroscopy showed that the glass composition has a high spatial uniformity and that the Yb concentration in the solid sample is proportional to the Yb concentration in the melt, what was confirmed by absorption measurements. Intense blue emission at 507 nm was observed, corresponding to half of the wavelength of the near infrared region (NIR) emission; besides, a decay lifetime of 0.25 ms was measured and this corresponds to half of the decay lifetime in the infrared region; these are very strong indications of the presence of blue cooperative luminescence. Larger targets have been produced to be sputtered, resulting in thin films for three dimensional (3D) display and waveguide applications. (c) 2006 Elsevier B.V. All rights reserved.

Drude's model calculation rule on electrical transport in Sb-doped SnO2 thin films, deposited via sol-gel

The evaluation of free carrier concentration based on Drude's theory can be performed by the use of optical transmittance in the range 800-2000 nm (near infrared) for Sb-doped SnO2 thin films. In this article, we estimate the free carrier concentration for these films, which are deposited via sol-gel dip-coating. At approximately 900 mn, there is a separation among transmittance curves of doped and undoped samples. The plasma resonance phenomena approach leads to free carrier concentration of about 5 x 1020 cm(-3). The increase in the Sb concentration increases the film conductivity; however, the magnitude of measured resistivity is still very high. The only way to combine such a high free carrier concentration with a rather low conductivity is to have a very low mobility. It becomes possible when the crystallite dimensions are taken into account. We obtain grains with 5 nm of average size by estimating the grain size from X-ray diffraction data, and by using line broadening in the diffraction pattern. The low conductivity is due to very intense scattering at the grain boundary, which is created by the presence of a large amount of nanoscopic crystallites. Such a result is in accordance with X-ray photoemission spectroscopy data that pointed to Sb incorporation proportional to the free electron concentration, evaluated according to Drude's model. (c) 2006 Elsevier Ltd. All rights reserved.