Critical voltage levels as the criterion for planning power systems: Poland.

Mode of access: Internet.

The threshold of religion,

Mode of access: Internet.

A versatile high-voltage bias supply for extended range MIS C(V) and G(V) measurements /

Includes bibliographical references (p. 61).

The forgotten threshold; a journal of Arthur Middleton [pseud.]

Mode of access: Internet.

Democracy, the threshold of freedom.

Bibliographical footnotes.

The threshold covenant;

Mode of access: Internet.

The threshold of manhood /

Mode of access: Internet.

Operator's manual including basic issue items list : test set, generator, and voltage regulator, automotive (Allen Electric and Equipment Co. model 30-82) (4910-270-3780).

"April 1965."

Operator's manual : test set, generator, and voltage regulator, automotive, 6, 12, and 24 volt systems (Sun Electric Corp., model no. VAT-25) (4910-270-3780).

"August 1966."

Operator, organizational, direct support, and general support maintenance manual (including repair parts and special tools list and depot maintenance repair parts and special tools) : test set, generator and voltage regulator, automotive, 12-and 24-volt systems (Allen Electric and Equipment Company model no. 30-92) (4910-092-9136).

"15 October 1971."

Operator's manual for low voltage circuit testers.

"April 1975."

High voltage electrical safety orders.

Mode of access: Internet.

Crane, H. Richard "Dick" Experiments - High Voltage Accelerator

Glass Slide #11

Diode laser treatment of pre-threshold and threshold retinopathy of prematurity

Purpose: Retinopathy of prematurity (ROP) is a sight-threatening condition of premature infants. This study aimed to investigate the efficacy of diode laser photocoagulation in the treatment of pre-threshold and threshold ROP. Methods: A retrospective review was conducted of patients who underwent diode laser treatment for ROP by one author (GAG) from 1992 to 2000. During this time, 2137 babies

Voltage control of exchange coupling in phosphorus doped silicon

Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These voltage biases create electro-static fields within the crystal substrate, perturbing the states of the donor electrons and thus altering the strength of the exchange interaction between them. We find that control gates of this kind can be used to either enhance or reduce the strength of the interaction, by an amount that depends both on the magnitude and orientation of the donor separation.