A thermal-elastic analysis on laser-induced reverse bulging and plugging in circular brass foil

A new failure mode is observed in circular brass foils induced by laser beam. The new failure is based on the following experimental facts : (1) the peripheries of the circular brass foils are fixed and the surfaces of the foils are radiated by laser beam ; (2) the laser beam used is considered to be non-Gaussian spatially, actually an approximately uniform distribution limited in a certain size spot ; (3) the pulse on time of laser beam should be 250 μs, i.e. so called long duration pulse laser. The failure process consists of three stages ; i.e. thermal bulging, localized shear deformation and perforation by plugging. The word reverse in reverse bulging and plugging mode means that bulging and plugging occur in the direction of incident laser beam. To study the newly-discovered type of failure quantitatively, analytical solutions for the axisymmetric temperature field and deflection curve are derived. The calculated results show that the newly discovered failure mode is attributed to the spatial structure effect of laser beam indeed.

Morphological Stability of Epitaxial Thin Elastic Films by Van Der Waals Force

The morphological stability of epitaxial thin elastic films on a substrate by van der Waals force is discussed. It is found that only van der Waals force with negative Hamaker constant (A < 0) tends to stabilize the film, and the lower bound for the Hamaker constant is also obtained for the stability of thin film. The critical value of the undulation wavelength is found to be a function of both film thickness and external stress. The charateristic time-scale for surface mass diffusion scales to the fourth power to the wavelength of the perturbation.

Modeling Nonlinear Peeling of Ductile Thin Films-Critical Assessment of Analytical Bending Models Using FE Simulations

Three analytical double-parameter criteria based on a bending model and a two-dimensional finite element analysis model are presented for the modeling of ductile thin film undergoing a nonlinear peeling process. The bending model is based on different governing parameters: (1) the interfacial fracture toughness and the separation strength, (2) the interfacial fracture toughness and the crack tip slope angle, and (3) the interfacial fracture toughness and the critical Mises effective strain of the delaminated thin film at the crack tip. Thin film nonlinear peeling under steady-state condition is solved with the different governing parameters. In addition, the peeling test problem is simulated by using the elastic-plastic finite element analysis model. A critical assessment of the three analytical bending models is made by comparison of the bending model solutions with the finite element analysis model solutions. Furthermore, through analyses and comparisons for solutions based on both the bending model and the finite element analysis model, some connections between the bending model and the finite element analysis model are developed. Moreover, in the present research, the effect of different selections for cohesive zone shape on the ductile film peeling solutions is discussed.

Microscale mechanics for metal thin film delamination along ceramic substrates

The metal thin film delamination along metal/ceramic interface in the case of large scale yielding is studied by employing the strain gradient plasticity theory and the material microscale effects are considered. Two different fracture process models are used in this study to describe the nonlinear delamination phenomena for metal thin films. A set of experiments have been done on the mechanism of copper films delaminating from silica substrates, based on which the peak interface separation stress and the micro-length scale of material, as well as the dislocation-free zone size are predicted.

Ink-jet printing of carbon nanotube thin film transistors

Ink-jet printing is an important process for placing active electronics on plastic substrates. We demonstrate ink-jet printing as a viable method for large area fabrication of carbon nanotube (CNT) thin film transistors (TFTs). We investigate different routes for producing stable CNT solutions ("inks"). These consist of dispersion methods for CNT debundling and the use of different solvents, such as N -methyl-2-pyrrolidone. The resulting printable inks are dispensed by ink-jet onto electrode bearing silicon substrates. The source to drain electrode gap is bridged by percolating networks of CNTs. Despite the presence of metallic CNTs, our devices exhibit field effect behavior, with effective mobility of ∼0.07 cm2 /V s and ON/OFF current ratio of up to 100. This result demonstrates the feasibility of ink-jet printing of nanostructured materials for TFT manufacture. © 2007 American Institute of Physics.

High performance nanocomposite thin film transistors with bilayer carbon nanotube-polythiophene active channel by ink-jet printing

Nanocomposite thin film transistors (TFTs) based on nonpercolating networks of single-walled carbon nanotubes (CNTs) and polythiophene semiconductor [poly [5, 5′ -bis(3-dodecyl-2-thienyl)- 2, 2′ -bithiophene] (PQT-12)] thin film hosts are demonstrated by ink-jet printing. A systematic study on the effect of CNT loading on the transistor performance and channel morphology is conducted. With an appropriate loading of CNTs into the active channel, ink-jet printed composite transistors show an effective hole mobility of 0.23 cm 2 V-1 s-1, which is an enhancement of more than a factor of 7 over ink-jet printed pristine PQT-12 TFTs. In addition, these devices display reasonable on/off current ratio of 105-10 6, low off currents of the order of 10 pA, and a sharp subthreshold slope (<0.8 V dec-1). The work presented here furthers our understanding of the interaction between polythiophene polymers and nonpercolating CNTs, where the CNT density in the bilayer structure substantially influences the morphology and transistor performance of polythiophene. Therefore, optimized loading of ink-jet printed CNTs is crucial to achieve device performance enhancement. High performance ink-jet printed nanocomposite TFTs can present a promising alternative to organic TFTs in printed electronic applications, including displays, sensors, radio-frequency identification (RFID) tags, and disposable electronics. © 2009 American Institute of Physics.

A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.