Characterization of polymorphous silicon thin film and solar cells

Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm(2)) at room temperature (T-R).

Transition films from amporphous to microcrystalline silicon and solar cells

A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasmaenhanced chemical vapor deposition (VHF-PECVD)from a mixture of SiH4 diluted in H-2. The effect of hydrogen dilution ratios R = [H-2]/[SiH4] on the microstructure of the films was investigated. The photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that the diphasic films gain both the fine photoelectric properties like a-Si: H and high stability like mu w-Si:H. By using the diphasic silicon films as the intrinsic layer, p-i-n junction solar cells were prepared. Current-voltage (J-V) characteristics and stability of the solar cells were measured under an AM1.5 solar simulator. We observed a light-induced increase of 5.2% in the open-circuit voltage (V-oc) and a light-induced degradation of similar to 2.9% inefficiency.

Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells

Based on our experimental research on diphasic silicon films, the parameters such as absorption coefficient, mobility lifetime product and bandgap were estimated by means of effective-medium theory. And then computer simulation of a-Si: H/mu c-Si: H diphasic thin film solar cells was performed. It was shown that the more crystalline fraction in the diphasic silicon films, the higher short circuit density, the lower open-circuit voltage and the lower efficiency. From the spectral response, we can see that the response in long wave region was improved significantly with increasing crystalline fraction in the silicon films. Taking Lambertian back refraction into account, the diphasic silicon films with 40%-50% crystalline fraction was considered to be the best intrinsic layer for the bottom solar cell in micromorph tandem.

NIP a-Si : H solar cells on stanless steel with p-type nc-Si : H window layer

The successful application of boron-doped hydrogenated nanocrystalline silicon as window layer in a-Si: H nip solar cells on stainless steel foil with a thickness of 0.05 mm is reported. Open circuit voltage and fill factor of the fabricated solar cell were 0.90V and 0.70 respectively. The optical and structural properties of the p-layers have been investigated by using UV-VIS and Raman spectroscopy. It is confirmed that the p-layer is hydrogenated nanocrystalline silicon with a wide optical gap due to quantum size effect.

AMPS modeling of light J-V characteristics of a-Si based solar cells

AMPS (Analysis of microelectronic and photonic structures) mode,which was developed by Pennsylvania State University, has been used to module the light J-V characteristics of a-Si solar cells with a structure of TCO/p-a-SiC:H/i-a-Si:H/n-a-Si:H/ metal. The effects of valence band offset and contact barriers at p/i and TOC/p, n/metal interfaces on the light J-V characteristics have been examined. The modeling has qualitatively categorized and explained the non-ideal J-V behaviors (rollover, crossover, Voc shift,and rollunder) observed in a-Si based solar cells.

QE and Suns-V-oc study on the epitaxial CSiTF solar cells

In order to clarify the major factors having confined the efficiencies of as-prepared crystalline silicon thin film (CSiTF) solar cells on the SSP (silicon sheets from powder) ribbons, QE (quantum efficiency) and Suns-V-oc study were performed on the epitaxial CSiTF solar cells fabricated on the SSP ribbons, the SSP ribbons after surface being zone melting recrystallized (ZMR) and single crystalline silicon (sc-Si) substrates. The results show that the epi-layers deposited on the SSP ribbons have rough surfaces, which not only increases the diffusion reflectance on the surfaces but also makes the anti-reflection coatings become structure-loosened, both of which would deteriorate the light trapping effect; in addition, the epi-layers deposited on the SSP ribbons possess poor crystallographic quality, so the heavy grain boundary (GB) recombination limits the diffusion length of the minority carriers in the epi-layers, which makes the as-prepared CSiTF solar cells suffer the worse spectra response at long-wavelength range. Nearly all the dark characteristic parameters of the CSiTF solar cells are far away from the ideal values. The performances of the CSiTF solar cells are especially affected by too high I-02 (the dark saturation current of space charge region) values and too low R-sh (parallel resistance) values. The higher 102 values are mainly caused by the heavy GB recombination resulting from the poor crystallographic qualities of the silicon active layers in the space charge regions, while the lower R-sh values are attributed to the electrical leakage at the un-passivated PN junction or solar cell edges after the solar cells are cut by the laser scriber.

High-temperature electron-hole liquid and dynamics of Fermi excitons in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array

State-filling effects of the exciton in a In0.65Al0.35As/Al0.4Ga0.6As quantum dot array are observed by quantum dot array photolumineseence at a sample temperature of 77 K. The exciton emission at low excitation density is dominated by the radiative recombination of the states in the s shell and at high excitation density the emission mainly results from the radiative recombination of the exciton state in the p shell. The spectral interval between the states in the s and p shells is about 30-40 mcV. The time resolved photoluminescence shows that the decay time of exciton states in the p shell is longer than that of exciton states in the s shell, and the emission intensity of the exciton state in the p shell is superlinearly dependent on excitation density. Furthermore, electron-hole liquid in the quantum dot array is observed at 77 K, which is a much higher temperature than that in bulk. The emission peak of the. recombination, of electron-hole liquid has an about 200 meV redshift from the exciton fluorescence. Two excitation density-dependent emission peaks at 1.56 and 1.59 eV are observed, respectively, which result from quantum confinement effects in QDs. The emission intensity of electron-hole liquid is directly proportional to the cubic of excitation densities and its decay time decreases significantly at the high excitation density.

A new technique for boosting efficiency of silicon solar cells

A new type of photovoltaic system with higher generation power density has been studied in detail. The feature of the system is a V-shaped module (VSM) with two tilted monocrystalline solar cells. Compared to solar cells in a flat orientation, the VSM enhances external quantum efficiency and leads to an increase of 31% in power conversion efficiency. Due to the VSM technique, short-circuit current density was raised from 24.94 to 33.7mA/cm(2), but both fill factor and open-circuit voltage were approximately unchanged. For the VSM similar results (about 30% increase) were obtained for solar cells fabricated by using mono-crystal line silicon wafers with only conventional background impurities. (c) 2004 Elsevier B.V. All rights reserved.

Calculation of energy levels in InGaAs/GaAs quantum dot array

The subbands of the ground state E-c1, the first excited state E-c2 and heavy hole state E-HH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H-0 which is derived from eight-band k . p theory and the calculations are performed at k(x) = k, = k = 0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%,the intersubband transition wavelength of E-c2 to E-c1, blue-shifts from 18.50 to 11.87 mu m,while the transition wavelength of E-c1, to E-HH1, red-shifts from 1. 04 to 1. 73 mu m. With the sizes of Ir-0.5 Ga-0.5 As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from E-c1, to E-C2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 pm (5.90 pm) to 53.47 mu m (31.87 pm), respectively, and the transition wavelengths of E-C1 to E-HH1 red-shift from 1. 13 mu m (1.60 mu m) to 1.27 mu m (2.01 mu m), respectively.

Effect of ultraviolet light on hybrid zinc oxide polymer bulk heterojunction solar cells

Compared to conjugated polymer poly[2-methoxy-5- (3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) solar cells, bulk heterojunction solar cells composed of zinc oxide (ZnO) nanocrystals and MDMO-PPV have a better energy conversion efficiency, However, ultraviolet (UV) light deteriorates the performance of solar cells composed of ZnO and MDMO-PPV. We propose a model to explain the effect of UV illumination on these ZnO:MDMO-PPV solar cells. According to this model, the degradation from UV illumination is due to a decrease of exciton dissociation efficiency, Our model is based on the experimental results such as the measurements of current density versus voltage, photoluminescence, and photocurrent.

Deposition of p-type nc-SiC : H thin films with subtle carbon incorporation for applications in p-i-n solar cells

This paper presents a detailed study on the effects of carbon incorporation and substrate temperature on structural, optical, and electrical properties of p-type nanocrystalline amorphous silicon films. A p-nc-SiC: H thin film with optical gap of 1.92 eV and activation energy of 0.06 eV is obtained through optimizing the plasma parameters. By using this p-type window layer, single junction diphasic nc-SiC : H/a-Si : H solar cells have been successfully prepared with a V-oc of 0.94 eV.

mc-Si : H/c-Si solar cell prepared by PECVD

Hetero-junction solar cells with an me-Si: H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer's thickness of emitter layer. The highest of V-oc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the V-oc of 549.8 mV, J(sc) of 32.19 mA center dot cm(-2) and the cell's area of 1 cm(2).

XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells

Detailed X-ray photoelectron spectroscopy (XPS) depth profiling measurements were performed across the back n-layer/transparent conducting oxide (n/TCO) inter-faces for superstrate p-i-n solar cells to examine differences between amorphous silicon (a-Si:H) and microcrystalline silicon (mu c-Si:H) n-layer materials as well as TCO materials ZnO and ITO in the chemical, microstructural and diffusion properties of the back interfaces. No chemical reduction of TCO was found for all variations of n-layer/TCO interfaces. We found that n-a-Si:H interfaces better with ITO, while n-mu c-Si:H, with ZnO. A cross-comparison shows that the n-a-Si:H/ITO interface is superior to the n-mu c-Si:H/ZnO interface, as evidenced by the absence of oxygen segregation and less oxidized Si atoms observed near the interface together with much less diffusion of TCO into the n-layer. The results suggest that the n/TCO interface properties are correlated with the characteristics of both the n-layer and the TCO layer. Combined with the results reported on the device performance using similar back n/TCO contacts, we found the overall device performance may depend on both interface and bulk effects related to the back n/TCO contacts. (c) 2006 Elsevier B.V. All rights reserved.

Silicon thin films prepared in the transition region and their use in solar cells

Diphasic silicon films (nc-Si/a-Si:H) have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the nc-Si/a-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. The blue shift for the stretching mode and red shift for the wagging mode in the IR spectra also show the variation of the microstructure. By using this kind of film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51 % and a stabilized efficiency of 8.01% (AM 1.5, 100 mw/cm(2)) at room temperature. (c) 2006 Published by Elsevier B.V.

Emitter of hetero-junction solar cells created using pulsed rapid thermal annealing

In this paper, we use a pulsed rapid thermal processing (RTP) approach to create an emitter layer of hetero-junction solar cell. The process parameters and crystallization behaviour are studied. The structural, optical and electric properties of the crystallized films are also investigated. Both the depth of PN junction and the conductivity of the emitter layer increase with the number of RTP pulses increasing. Simulation results show that efficiencies of such solar cells can exceed 15% with a lower interface recombination rate, but the highest efficiency is 11.65% in our experiments.