渭北泥炭资源在栽培基质中的应用研究

针对人工栽培基质中基质配比问题,采用生物试验的方法,对陕西彬县的泥炭、陕西铜川的油页岩、陕西关中土粘化层土壤,进行不同比例的配合后,再对配合基质设制不同处理,进行作物的室内栽培试验,通过生物量、生物性状(根冠比)、及产量分析来判断基质配比的优劣。研究结果表明:随着泥炭比例的增加,小青菜的产量增加,泥炭量达到一定值后,随着泥炭量的增加,小青菜的产量反而降低;泥炭与<1 mm粘土配合(PS)处理中,PS3处理(泥炭∶粘土为3∶1)小青菜地上部分产量最大;在泥炭与7~10 mm粘土配合(PB)处理中,PB2处理(泥炭∶粘土为2∶1)小青菜地上部分产量最大;对小青菜根系生物量来说,在泥炭和粘土比例较小时,小颗粒粘土处理的根量明显高于大颗粒粘土处理,在泥炭和粘土的比例较大时,大颗粒处理高于小颗粒处理。对油页岩处理而言,在泥炭量较少的配合基质中加入8%的油页岩能起到良好的增产作用;而在泥炭含量较多时,对小青菜产量的影响是负面的;石灰处理对小青菜地上部分产量影响都是负面的,但是对小青菜根系生物量的影响基本是正面的。高温处理对小青菜地上部分产量的影响基本上都是负面的,对小青菜根系的生长也基本是起负作用的。根冠比达到某一适宜值...

施氮量对黄土旱塬区冬小麦产量和土壤水分动态的影响

为了探明施氮量对黄土旱塬区冬小麦(Triticum aestivum L.)籽粒产量和麦田土壤水分动态的影响规律,以抗旱性冬小麦品种长武58为供试材料,于2006～2008年连续两个年度在陕西省长武县对不同施氮量条件下麦田土壤贮水量动态、耗水规律、小麦产量和夏闲期降水补给率等特征进行研究。结果表明,麦田土壤贮水量随季节和降水明显变化,同一生育时期2.7m土层的土壤贮水量基本随施氮量的增加而减少。偏旱年每公顷施氮300kg和平水年每公顷施氮225kg均能够获得当年最大的籽粒产量和水分利用效率。每公顷施氮75kg和225kg均能在夏闲期获得较大的降水补给率。每公顷施氮225kg更有利于黄土旱塬区冬小麦的高产和稳产。

黄土高原南瓜高糖低硝酸盐施肥模式研究

采用N、P、K3因素最优设计,在陕北黄土高原进行了南瓜氮、磷、钾用量及其肥效反应模式田间试验,研究不同施肥量对南瓜硝态氮、可溶性糖两项营养品质的影响,旨在探讨南瓜品质高糖低硝酸盐的N、P、K肥效反应模式,提出优化的施肥方案。结果表明,N肥单因素对南瓜硝态氮和可溶性糖含量影响最大,K肥单因素对南瓜硝态氮和可溶性糖含量影响不显著,N与P交互作用对南瓜高糖低硝酸盐影响显著,K肥施用量一定时,氮肥与磷肥的施用量不易过大。根据南瓜N、P、K肥效反应模式,筛选出南瓜品质硝态氮含量在200mg·kg-1以下、可溶性糖含量在7%以上的较佳施肥量为施氮95～120 kg·hm-2,施磷40～70 kg·hm-2,施钾35～80 kg·hm-2,N∶P2O5∶K2O=1∶0.42∶0.37。

沃特和PAM施用方式对土壤水分及玉米生长的影响

为了鉴别沃特保水剂和PAM不同施用方式的施用效果,在陕北黄土丘陵沟壑区开展了撒施、沟施、穴施对土壤水含量和玉米生长影响的田间试验。结果表明不同施用方式提高了0～10cm土层土壤水含量,而30～40cm土层土壤水含量则随降水量的多少呈现出不同的规律性。随着玉米的生长,不同施用方式影响的土层深度逐渐加深,从三叶期0～50cm土层增加到成熟期的0～200cm土层,土壤水含量表现为沟施、穴施高于撒施,撒施高于对照。3种施用方式对玉米出苗无显著影响,但均提高了玉米生物量、籽粒产量、水分利用效率,降低了玉米的耗水量,其中沟施、穴施的效果强于撒施。沃特、PAM相同施用方式对土壤水含量和玉米生长无显著影响,且沟施和穴施之间无显著性差异,但沃特单位施用量单位面积的增产量高于PAM。玉米生产中,沃特、PAM应以沟施或穴施为主。

陕北黄土区陡坡地人工植被的土壤水分生态环境

通过定点土壤水分测定与对比分析,研究了陕北黄土区35~45°陡坡地人工植被的土壤水分亏缺状况、年际、年内动态变化规律、干燥化特征及其补偿恢复特征。结果表明:陡坡地多年生人工植被的土壤水分亏缺极为严重,贫水年0~10m土层贮水量仅相当于田间持水量的26.2%~42.0%,丰水年贮水量也仅占田间持水量的27.0%~43.3%;亏缺次序为:柠条>刺槐>苜蓿>侧柏>杨树>油松>荒坡>杏>枣>农地。年际间同一植被土壤水分含量的变化主要发生在200 cm以上土层内,变异程度随土壤深度的增加而减弱。同一生长季,各种植被0~120 cm土层含水量的变异系数都较大,但植被间差异较小;120 cm以下土层,变异系数较小,但植被间差异较大。陡坡地多年生植被均有永久干层存在,但深层土壤干燥化强度因植物种类和生长年限而存在明显的差异。雨季土壤水分的补偿和恢复深度为1.0~1.4m,但不同植被的土壤贮水增量和补偿度有较大差异。同一植被丰水年的雨水补偿深度比干旱年可增加60 cm以上,5m土层贮水增量增加3倍以上。在自然降雨条件下,陡坡地多年生人工植被的土壤贮水亏缺状况不能得到改善,土壤干化现象也不可能有所缓解。

中国沙棘、俄罗斯沙棘和俄罗斯沙棘×中国沙棘光合特性及影响因子

在陕北黄土丘陵沟壑区用LI-6400光合仪对中国沙棘、俄罗斯沙棘和俄罗斯沙棘×中国沙棘光合特性及影响因子进行了测定。测定结果表明三者的光合速率、气孔导度、胞间CO2浓度、蒸腾速率日变化均为"双峰"曲线。中国沙棘光合"午休"现象较轻,日光合速率和午后光合速率、气孔导度、胞间CO2浓度、蒸腾速率极显著(p<0.01)高于俄罗斯沙棘和俄罗斯沙棘×中国沙棘。中国沙棘光合作用最适气孔导度、大气CO2浓度、空气相对湿度比俄罗斯沙棘小,最适胞间CO2浓度、蒸腾速率、气温、光合有效辐射比俄罗斯沙棘高。中国沙棘在最适气孔导度、胞间CO2浓度、蒸腾速率和大气CO2浓度下的光合速率比俄罗斯沙棘高;在最适气温、空气相对湿度、光合有效辐射下的光合速率比俄罗斯沙棘低。俄罗斯沙棘×中国沙棘光合"午休"现象比中国沙棘强,比俄罗斯沙棘弱,午后光合速率与俄罗斯沙棘相近;俄罗斯沙棘×中国沙棘最适气孔导度、大气CO2浓度高于中国沙棘和俄罗斯沙棘,最适胞间CO2浓度低于中国沙棘和俄罗斯沙棘,最适蒸腾速率、气温、空气相对湿度、光合有效辐射居于中国沙棘和俄罗斯沙棘之间。俄罗斯沙棘×中国沙棘在最适气孔导度下的光合速率高于中国沙棘和俄罗斯沙棘;在最适胞间CO...

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

Type-II SiGe/Si MQWS (multi-quantum wells) and self-organized Ge/Si islands grown by UHV/CVD system

Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.

Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films

Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide (a-SiOX:H(x<2.0)) films was measured. Two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-SiOX:H intrinsic emission and Er3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesC. Micro-Raman results indicate that the a-SiOX:H films are a mixture of two phases, an amorphous SiOX matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a-SiOX:H films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er3+ emission. Our study emphasizes the role of a-Si domains on Er3+ emission in a-SiOX:H films.

Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si

In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si/gamma-Al2O3/Si. First, single crystalline gamma-Al2O3 (100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si/gamma-Al2O3 (100)/Si(100) SOI materials are characterized in detail by RHEED, XRD and AES techniques. The results demonstrate that the device-quality novel SOI materials Si/gamma-Al2O3 (100)/Si(100) has been fabricated successfully and can be used for application of MOS device.

Simulation and fabrication of thermo-optic variable optical attenuators based on multimode interference coupler

A type of thermo-optic variable optical attenuator based on multimode interference coupler is proposed. The optical field propagation properties of the devices are simulated using finite difference beam propagation method. The propagation loss of the fabricated device is 2-4.2 dB at the wavelength range 1510-1610 nm. The total power consumption is 370 mW and the maximum attenuation is more than 25 dB, which almost can meet the requirements of optical fiber communication systems.

Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon

The gamma-Al2O3 films were grown on Si (100) substrates using the sources of TMA (Al (CH3)(3)) and O-2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the gamma-Al2O3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was gamma-Al2O3(100)/Si(100). The thickness uniformity of gamma-Al2O3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000degreesC in O-2 atmosphere. The high-frequency C-V and leakage current of Al/gamma-Al2O3/Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick gamma-Al2O3 film on silicon increases from 17V to 53V.

Study on optical band gap of boron-doped nc-Si : H film

The optical band gap (E-g) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the E-g was evaluated utilizing three different relations for comparison, namely: alphahnu=C(hnu-E-g)(3), alphahnu=B-0(hnu-E-g)(2), alphahnu=C-0(hnu-E-g)(2). Result showed that E-g decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (T-s), respectively. E-g raises up with rf power density (P-d) from 0.45W.cm(-2) to 0.60w.cm(-2) and then drops to the end. These can be explained for E-g decreases with disorder in the films.

Symmetry in the diagonal self-assembled InAs quantum wire arrays on InP substrate

Diagonal self-assembled InAs quantum wire (QWR) arrays with the stacked InAs/In0.52Al0.48As structure are grown on InP substrates, which are (001)-oriented and misoriented by 6degrees towards the [100] direction. Both the molecular beam epitaxy (MBE) and migration enhanced epitaxy (MEE) techniques are employed. Transmission electron microscopy reveals that whether a diagonal InAs QWR array of the stacked InAs/InAlAs is symmetrical about the growth direction or not depends on the growth method as well as substrate orientation. Asymmetry in the diagonal MEE-grown InAs QWR array can be ascribed to the influence of surface reconstruction on upward migration of adatoms during the self-assembly of the InAs quantum wires.

Exploration on enhancing innovation capability of functional information materials in China

The present status and future prospects of functional information materials, mainly focusing on semiconductor microstructural materials, are introduced first in this paper. Then a brief discussion how to enhance the academic level and innovation capability of research and development of functional information materials in China are made. Finally the main problems concerning the studies of materials science and technology are analyzed, and possible measures for promoting its development are proposed.