Electrochemistry of carbon based engineered structures

The main aims of my PhD research work have been the investigation of the redox, photophysical and electronic properties of carbon nanotubes (CNT) and their possible uses as functional substrates for the (electro)catalytic production of oxygen and as molecular connectors for Quantum-dot Molecular Automata. While for CNT many and diverse applications in electronics, in sensors and biosensors field, as a structural reinforcing in composite materials have long been proposed, the study of their properties as individual species has been for long a challenging task. CNT are in fact virtually insoluble in any solvent and, for years, most of the studies has been carried out on bulk samples (bundles). In Chapter 2 an appropriate description of carbon nanotubes is reported, about their production methods and the functionalization strategies for their solubilization. In Chapter 3 an extensive voltammetric and vis-NIR spectroelectrochemical investigation of true solutions of unfunctionalized individual single wall CNT (SWNT) is reported that permitted to determine for the first time the standard electrochemical potentials of reduction and oxidation as a function of the tube diameter of a large number of semiconducting SWNTs. We also established the Fermi energy and the exciton binding energy for individual tubes in solution and, from the linear correlation found between the potentials and the optical transition energies, one to calculate the redox potentials of SWNTs that are insufficiently abundant or absent in the samples. In Chapter 4 we report on very efficient and stable nano-structured, oxygen-evolving anodes (OEA) that were obtained by the assembly of an oxygen evolving polyoxometalate cluster, (a totally inorganic ruthenium catalyst) with a conducting bed of multiwalled carbon nanotubes (MWCNT). Here, MWCNT were effectively used as carrier of the polyoxometallate for the electrocatalytic production of oxygen and turned out to greatly increase both the efficiency and stability of the device avoiding the release of the catalysts. Our bioinspired electrode addresses the major challenge of artificial photosynthesis, i.e. efficient water oxidation, taking us closer to when we might power the planet with carbon-free fuels. In Chapter 5 a study on surface-active chiral bis-ferrocenes conveniently designed in order to act as prototypical units for molecular computing devices is reported. Preliminary electrochemical studies in liquid environment demonstrated the capability of such molecules to enter three indistinguishable oxidation states. Side chains introduction allowed to organize them in the form of self-assembled monolayers (SAM) onto a surface and to study the molecular and redox properties on solid substrates. Electrochemical studies on SAMs of these molecules confirmed their attitude to undergo fast (Nernstian) electron transfer processes generating, in the positive potential region, either the full oxidized Fc+-Fc+ or the partly oxidized Fc+-Fc species. Finally, in Chapter 6 we report on a preliminary electrochemical study of graphene solutions prepared according to an original procedure recently described in the literature. Graphene is the newly-born of carbon nanomaterials and is certainly bound to be among the most promising materials for the next nanoelectronic generation.

Confocal microscopy applied to the study of single entity fluorescence and light scattering

A sample scanning confocal optical microscope (SCOM) was designed and constructed in order to perform local measurements of fluorescence, light scattering and Raman scattering. This instrument allows to measure time resolved fluorescence, Raman scattering and light scattering from the same diffraction limited spot. Fluorescence from single molecules and light scattering from metallic nanoparticles can be studied. First, the electric field distribution in the focus of the SCOM was modelled. This enables the design of illumination modes for different purposes, such as the determination of the three-dimensional orientation of single chromophores. Second, a method for the calculation of the de-excitation rates of a chromophore was presented. This permits to compare different detection schemes and experimental geometries in order to optimize the collection of fluorescence photons. Both methods were combined to calculate the SCOM fluorescence signal of a chromophore in a general layered system. The fluorescence excitation and emission of single molecules through a thin gold film was investigated experimentally and modelled. It was demonstrated that, due to the mediation of surface plasmons, single molecule fluorescence near a thin gold film can be excited and detected with an epi-illumination scheme through the film. Single molecule fluorescence as close as 15nm to the gold film was studied in this manner. The fluorescence dynamics (fluorescence blinking and excited state lifetime) of single molecules was studied in the presence and in the absence of a nearby gold film in order to investigate the influence of the metal on the electronic transition rates. The trace-histogram and the autocorrelation methods for the analysis of single molecule fluorescence blinking were presented and compared via the analysis of Monte-Carlo simulated data. The nearby gold influences the total decay rate in agreement to theory. The gold presence produced no influence on the ISC rate from the excited state to the triplet but increased by a factor of 2 the transition rate from the triplet to the singlet ground state. The photoluminescence blinking of Zn0.42Cd0.58Se QDs on glass and ITO substrates was investigated experimentally as a function of the excitation power (P) and modelled via Monte-Carlo simulations. At low P, it was observed that the probability of a certain on- or off-time follows a negative power-law with exponent near to 1.6. As P increased, the on-time fraction reduced on both substrates whereas the off-times did not change. A weak residual memory effect between consecutive on-times and consecutive off-times was observed but not between an on-time and the adjacent off-time. All of this suggests the presence of two independent mechanisms governing the lifetimes of the on- and off-states. The simulated data showed Poisson-distributed off- and on-intensities, demonstrating that the observed non-Poissonian on-intensity distribution of the QDs is not a product of the underlying power-law probability and that the blinking of QDs occurs between a non-emitting off-state and a distribution of emitting on-states with different intensities. All the experimentally observed photo-induced effects could be accounted for by introducing a characteristic lifetime tPI of the on-state in the simulations. The QDs on glass presented a tPI proportional to P-1 suggesting the presence of a one-photon process. Light scattering images and spectra of colloidal and C-shaped gold nano-particles were acquired. The minimum size of a metallic scatterer detectable with the SCOM lies around 20 nm.

Plasmonenresonanzen von sichelförmigen metallischen Nanoobjekten

Metallische Objekte in der Größenordnung der optischen Wellenlänge zeigen Resonanzen im optischen Spektralbereich. Mit einer Kombination aus Kolloidlithographie, Metallfilmbedampfung und reaktivem Ionenstrahl¨atzen wurden Nanosicheln aus Gold bzw. Silber mit identischer Form und Orientierung in Sichelform mit einer Größe von 60nm bis 400nm hergestellt. Der Öffnungswinkel der Nanosicheln lässt sich kontinuierlich einstellen. Durch die einheitliche Orientierung lassen sich Messungen am Ensemble direkt auf das Verhalten des Einzelobjektes übertragen, wie ein Vergleich der Extinktionsspektren einer Ensemblemessung am UV/Vis/NIR-Spektrometer mit einer Einzelpartikelmessung in einem konfokalen Mikroskop zeigt. Die optische Antwort der Nanosicheln wurde als zwei-dimensionales Modell mit einer Finite Elemente Methode berechnet. Das Ergebnis sind mehrere polarisationsabhängige Resonanzen im optischen Spektrum. Diese lassen sich durch Variation des Öffnungswinkels und der Gr¨oße der Nanosichel verschieben. Durch Beleuchten lassen sich plasmonische Schwingungen anregen, die ein stark lokalisiertes Nahfeld an den Spitzen und in der Öffnung der Nanosicheln erzeugen. Das Nahfeld der Partikelresonanz wurde mit einer Fotolackmethode nachgewiesen. Die Untersuchungen am UV/Vis/NIR-Spektrometer zeigen mehrere polarisationsabhängige Resonanzen im Spektralbereich von 300 nm bis 3200 nm. Die Resonanzen der Nanosicheln lassen sich durch den Öffnungswinkel und den Durchmesser in der Größenordnung der Halbwertbreite im optischen Spektrum verschieben. In der Anwendung als Chemo- bzw. Biosensor zeigen Gold-Nanosicheln eine ähnliche Empfindlichkeit wie vergleichbare Sensoren auf der Basis von dünnen Metallstrukturen. Das Nahfeld zeichnet sich durch eine starke Lokalisierung aus und dringt, je nach Multipolordnung, zwischen 14 nm und 70 nm in die Umgebung ein. Quantenpunkte wurden an das Nahfeld der Nanosicheln gekoppelt. Die Emission der Quantenpunkte bei einer Wellenlänge von 860nm wird durch die Resonanz der Nanosicheln verstärkt. Die Nanosicheln wurden als optische Pinzette eingesetzt. Bei einer Anregung mit einem Laser bei einer Wellenlänge von 1064 nm wurden Polystyrolkolloide mit einem Durchmesser von 40 nm von den resonanten Nanosicheln eingefangen. Die Nanosicheln zeigen außergewöhnliche optische Eigenschaften, die mithilfe der Geometrieparameter über einen großen Bereich verändert werden können. Die ersten Anwendungen haben Anknüpfungspunkte zur Verwendung in der Sensorik, Fluoreszenzspektroskopie und als optische Pinzette aufgezeigt.

Development of synthetic methods of silicon nanocrystals functionalized with photoactive molecules

The thesis is focused on the development of a method for the synthesis of silicon nanocrystals with different sizes, narrow size distribution, good optical properties and stability in air. The resulting silicon nanocrystals have been covalently functionalized with different chromophores with the aim to exploit the new electronic and chemical properties that emerge from the interaction between silicon nanocrystal surface and ligands. The purpose is to use these chromophores as light harvesting antennae, increasing the optical absorption of silicon nanocrystals. Functionalized silicon nanocrystals have been characterized with different analytical techniques leading to a good knowledge of optical properties of semiconductor quantum dots.

Studio di celle solari innovative basate su "multiple electron-hole generation"

L’aumento dei consumi energetici e la sempre maggiore attenzione posta al tema ambientale fanno delle energie alternative una valida alternativa alle fonti , quali carbone e petrolio,che presentano una elevata generazione di gas serra . Tra le varie fonti alternative di energia un ruolo preponderante è stato assunto dal solare fotovoltaico, che dagli anni ’80 ad oggi ha conosciuto un rapido sviluppo sia in termini di ricerca che di utilizzo su larga scala. Negli ultimi anni tutti gli studi si stanno concentrando su un nuovo tipo di fotovoltaico, quello di terza generazione , il cui scopo è quello di ottenere dispositivi che possano garantire elevate efficienze in modo tale che la tecnologia fotovoltaica sia in grado di affermarsi definitivamente nel settore dell’energia. Il presente lavoro di tesi analizza il processo di conversione fotovoltaica ed il principio di funzionamento delle celle solari . I limiti termodinamici per l'efficienza di conversione di celle solari a singola giunzione sono stati discussi nella tesi. E' presentata nella tesi una rassegna delle principali strategie per il superamento dei limiti termodinamici per l'efficienza di una cella solare a singola giunzione . Sono stati analizzati : •il processo di rilassamento intrabanda dei nanocristalli ; •la generazione multipla di eccitoni (MEG) •il processo di Generazione di eccitoni multipli in nanocristalli di silicio colloidali (MEG in Si NCs). Tali risultati rivestono un particolare interesse per lo sviluppo di celle solari innovative , ad alta efficienza di conversione , utilizzando un materiale facilmente reperibile ed economico come appunto è il Silicio.

Addition of Zinc Sulfide Shells to Semiconducting Nanoparticles and its Effect on the Nanoparticle Fluorescence Emission Properties

The addition of a ZnS shell to CdSe and CdS quantum dot cores was explored using various methods. Spectrophotometry was used to assess the success of ZnS overcoating, which produces both an increase in overall fluorescence and decrease in particle size distribution. A new method was developed, involving preheating of the zinc and sulfide precursor solutions, resulting in CdSe(ZnS) particles with improved fluorescence and a more uniform shell coating from oleylamine-capped CdSe core particles.

A numerical study of Bi-periodic binary diffraction gratings for solar cell applications

In this paper, a numerical study is made of simple bi-periodic binary diffraction gratings for solar cell applications. The gratings consist of hexagonal arrays of elliptical towers and wells etched directly into the solar cell substrate. The gratings are applied to two distinct solar cell technologies: a quantum dot intermediate band solar cell (QD-IBSC) and a crystalline silicon solar cell (SSC). In each case, the expected photocurrent increase due to the presence of the grating is calculated assuming AM1.5D illumination. For each technology, the grating period, well/tower depth and well/tower radii are optimised to maximise the photocurrent. The optimum parameters are presented. Results are presented for QD-IBSCs with a range of quantum dot layers and for SSCs with a range of thicknesses. For the QD-IBSC, it is found that the optimised grating leads to an absorption enhancement above that calculated for an ideally Lambertian scatterer for cells with less than 70 quantum dot layers. In a QD-IBSC with 50 quantum dot layers equipped with the optimum grating, the weak intermediate band to conduction band transition absorbs roughly half the photons in the corresponding sub-range of the AM1.5D spectrum. For the SSC, it is found that the optimised grating leads to an absorption enhancement above that calculated for an ideally Lambertian scatterer for cells with thicknesses of 10 ?m or greater. A 20um thick SSC equipped with the optimised grating leads to an absorption enhancement above that of a 200um thick SSC equipped with a planar back reflector.

Desarrollo de estructuras nanofotonicas de campo cercano para intensificacion localizada de luz en celulas solares de banda intermedia - Near-field nanophotonic structures for localized light enhancement in intermediate band solar cells

This doctoral thesis explores some of the possibilities that near-field optics can bring to photovoltaics, and in particular to quantum-dot intermediate band solar cells (QD-IBSCs). Our main focus is the analytical optimization of the electric field distribution produced in the vicinity of single scattering particles, in order to produce the highest possible absorption enhancement in the photovoltaic medium in their surroundings. Near-field scattering structures have also been fabricated in laboratory, allowing the application of the previously studied theoretical concepts to real devices. We start by looking into the electrostatic scattering regime, which is only applicable to sub-wavelength sized particles. In this regime it was found that metallic nano-spheroids can produce absorption enhancements of about two orders of magnitude on the material in their vicinity, due to their strong plasmonic resonance. The frequency of such resonance can be tuned with the shape of the particles, allowing us to match it with the optimal transition energies of the intermediate band material. Since these metallic nanoparticles (MNPs) are to be inserted inside the cell photovoltaic medium, they should be coated by a thin insulating layer to prevent electron-hole recombination at their surface. This analysis is then generalized, using an analytical separation-of-variables method implemented in Mathematica7.0, to compute scattering by spheroids of any size and material. This code allowed the study of the scattering properties of wavelengthsized particles (mesoscopic regime), and it was verified that in this regime dielectric spheroids perform better than metallic. The light intensity scattered from such dielectric spheroids can have more than two orders of magnitude than the incident intensity, and the focal region in front of the particle can be shaped in several ways by changing the particle geometry and/or material. Experimental work was also performed in this PhD to implement in practice the concepts studied in the analysis of sub-wavelength MNPs. A wet-coating method was developed to self-assemble regular arrays of colloidal MNPs on the surface of several materials, such as silicon wafers, amorphous silicon films, gallium arsenide and glass. A series of thermal and chemical tests have been performed showing what treatments the nanoparticles can withstand for their embedment in a photovoltaic medium. MNPs arrays are then inserted in an amorphous silicon medium to study the effect of their plasmonic near-field enhancement on the absorption spectrum of the material. The self-assembled arrays of MNPs constructed in these experiments inspired a new strategy for fabricating IBSCs using colloidal quantum dots (CQDs). Such CQDs can be deposited in self-assembled monolayers, using procedures similar to those developed for the patterning of colloidal MNPs. The use of CQDs to form the intermediate band presents several important practical and physical advantages relative to the conventional dots epitaxially grown by the Stranski-Krastanov method. Besides, this provides a fast and inexpensive method for patterning binary arrays of QDs and MNPs, envisioned in the theoretical part of this thesis, in which the MNPs act as antennas focusing the light in the QDs and therefore boosting their absorption

Synthesis and characterization of GaAsSb-capped InAs-based QDIPs

Quantum dot infrared photodetectors (QDIPs) are very attractive for infrared imaging applications due to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high quality active region which requires a structural optimization of the nanostructures. With using GaAsSb capping layer, the optical properties, such as the PL intensity and its full width at half maximum (FWHM), of InAs QDs have been improved in the range between 1.15 and 1.5 m, because of the reduction of the compressive strain in QDs and the increment of QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponse spectra from GaAsSb-capped InAs-based QDIPs

Symmetry considerations in the empirical k.p Hamiltonian for the study of intermediate band solar cells

With the purpose of assessing the absorption coefficients of quantum dot solar cells, symmetry considerations are introduced into a Hamiltonian whose eigenvalues are empirical. In this way, the proper transformation from the Hamiltonian's diagonalized form to the form that relates it with Γ-point exact solutions through k.p envelope functions is built accounting for symmetry. Forbidden transitions are thus determined reducing the calculation burden and permitting a thoughtful discussion of the possible options for this transformation. The agreement of this model with the measured external quantum efficiency of a prototype solar cell is found to be excellent.

Epitaxial self-alignment: A new route to hybrid active plasmonic nanostructures

Concepts of lateral ordering of epitaxial semiconductor quantum dots (QDs) are for the first time transferred to hybrid nanostructures for active plasmonics. We review our recent research on the self-alignment of epitaxial nanocrystals of In and Ag on ordered one-dimensional In(Ga)As QD arrays and isolated QDs by molecular beam epitaxy. By changing the growth conditions the size and density of the metal nanocrystals are easily controlled and the surface plasmon resonance wavelength is tuned over a wide range in order to match the emission wavelength of the QDs. Photoluminescence measurements reveal large enhancement of the emitted light intensity due to plasmon enhanced emission and absorption down to the single QD level.

Realistic performance prediction in nanostructured solar cells as a function of nanostructure dimensionality and density

The behavior of quantum dot, quantum wire, and quantum well InAs/GaAs solar cells is studied with a very simplified model based on experimental results in order to assess their performance as a function of the low bandgap material volume fraction fLOW. The efficiency of structured devices is found to exceed the efficiency of a non-structured GaAs cell, in particular under concentration, when fLOW is high; this condition is easier to achieve with quantum wells. If three different quasi Fermi levels appear with quantum dots the efficiency can be much higher.

Propiedades Ópticas de los Materiales Activos en Diodos Láser con Confinamiento Cuántico

En esta tesis se recoge el trabajo experimental realizado para la caracterización de las propiedades ópticas en diodos láser construidos con estructuras basadas en pozos cuánticos (QW) y puntos cuánticos (QD). Las propiedades que se han estudiado en estos dispositivos son los espectros de ganancia, ganancia diferencial, índice diferencial y factor de ensanchamiento de línea (LEF). La comprensión de estas propiedades es de especial importancia para el diseño de nuevos diodos láser destinados a ser utilizados en aplicaciones exigentes como son las comunicaciones ópticas o aplicaciones médicas. El estudio se ha llevado a cabo en muestras de diodos láser suministrados por diferentes fabricantes: Ferdinand Braun Institut für Hóchstfrequenztechnik, Thales Research and Technology y la Universidad de Würzburg. Debido a esto las muestras de los láseres se han suministrado en diferentes configuraciones, utilizándose tanto dispositivos con cavidades de área ancha como de tipo caballete (“ridge”). En los trabajos se ha realizado el diseño y la construcción de los montajes experimentales y la implementación de los métodos analíticos necesarios para el estudio de las diferentes muestras. En los montajes experimentales se han implementado procesos para el filtrado espacial de los modos laterales de la cavidad presentes en los láseres de área ancha. Los métodos analíticos implementados se han utilizado para reducir los errores existentes en los sistemas de medida, mejorar su precisión y para separar la variación de índice en debida al calentamiento y la variación de corriente cuando los láseres operan en continua. El estudio sistemático de las propiedades de ópticas de los diodos láser basados en QW y QD ha permitido concluir que propiedades como el factor de ensanchamiento de línea no tienen por qué ser necesariamente inferiores en estos últimos, ya que dependen de las condiciones de inyección. En los láseres de QW se ha observado experimentalmente una reducción del factor de ensanchamiento de línea al alcanzarse la segunda transición, debido al aumento de la ganancia diferencial. ABSTRACT This thesis includes the experimental work for the characterization of optical properties of quantum well (QW) and quantum dot (QD) laser diodes. The properties that have been studied in these devices are the gain, differential gain, differential index and the linewith enhancement factor (LEF). The understating of these properties is of special importance for the design of new laser diodes to be used in exigent applications such as optical communications or medical applications. The study has been carried out using laser samples supplied by different manufacturers: Ferdinand Braun Institut fu¨r H¨ochstfrequenztechnik, Thales Research and Technology and the University of Wu¨rzburg. Because of this the laser samples were supplied in various configurations, using both broad area and ridge devices. In the work it has been done the design and construction of the experimental setups and implementation of analytical methods required for the study of the different devices. In the experimental set-ups it has been implemented a spatial filtering process to remove the lateral modes present in broad area lasers. The implemented analytical methods has been used to reduce the experimental errors in the measurement systems, improve the accuracy and separate the index variation caused by heating and current variation when the lasers operated on continuous wave. The systematic study of the optical properties of the QW and QD laser diodes has allowed concluding that properties such the linewith enhancement factor does not have to be necessary to be lower in the QD devices, since it is dependent on the injections conditions. In this work it has been experimentally observed a reduction of the linewith enhancement factor where the second transition has been reached mainly due to in the increased of the differential gain which is observed in this situation.

Research on wide-bandgap intermediate band solar cells and development of experimental techniques for their characterization

El trabajo que ha dado lugar a esta Tesis Doctoral se enmarca en la invesitagación en células solares de banda intermedia (IBSCs, por sus siglas en inglés). Se trata de un nuevo concepto de célula solar que ofrece la posibilidad de alcanzar altas eficiencias de conversión fotovoltaica. Hasta ahora, se han demostrado de manera experimental los fundamentos de operación de las IBSCs; sin embargo, esto tan sólo has sido posible en condicines de baja temperatura. El concepto de banda intermedia (IB, por sus siglas en inglés) exige que haya desacoplamiento térmico entre la IB y las bandas de valencia y conducción (VB and CB, respectivamente, por sus siglas en inglés). Los materiales de IB actuales presentan un acoplamiento térmico demasiado fuerte entre la IB y una de las otras dos bandas, lo cual impide el correcto funcionamiento de las IBSCs a temperatura ambiente. En el caso particular de las IBSCs fabricadas con puntos cuánticos (QDs, por sus siglas en inglés) de InAs/GaAs - a día de hoy, la tecnología de IBSC más estudiada - , se produce un rápido intercambio de portadores entre la IB y la CB, por dos motivos: (1) una banda prohibida estrecha (< 0.2 eV) entre la IB y la CB, E^, y (2) la existencia de niveles electrónicos entre ellas. El motivo (1) implica, a su vez, que la máxima eficiencia alcanzable en estos dispositivos es inferior al límite teórico de la IBSC ideal, en la cual E^ = 0.71 eV. En este contexto, nuestro trabajo se centra en el estudio de IBSCs de alto gap (o banda prohibida) fabricadsas con QDs, o lo que es lo mismo, QD-IBSCs de alto gap. Hemos fabricado e investigado experimentalmente los primeros prototipos de QD-IBSC en los que se utiliza AlGaAs o InGaP para albergar QDs de InAs. En ellos demostramos une distribución de gaps mejorada con respecto al caso de InAs/GaAs. En concreto, hemos medido valores de E^ mayores que 0.4 eV. En los prototipos de InAs/AlGaAs, este incremento de E^ viene acompaado de un incremento, en más de 100 meV, de la energía de activación del escape térmico. Además, nuestros dispositivos de InAs/AlGaAs demuestran conversión a la alza de tensión; es decir, la producción de una tensión de circuito abierto mayor que la energía de los fotones (dividida por la carga del electrón) de un haz monocromático incidente, así como la preservación del voltaje a temperaura ambiente bajo iluminación de luz blanca concentrada. Asimismo, analizamos el potencial para detección infrarroja de los materiales de IB. Presentamos un nuevo concepto de fotodetector de infrarrojos, basado en la IB, que hemos llamado: fotodetector de infrarrojos activado ópticamente (OTIP, por sus siglas en inglés). Nuestro novedoso dispositivo se basa en un nuevo pricipio físico que permite que la detección de luz infrarroja sea conmutable (ON y OFF) mediante iluminación externa. Hemos fabricado un OTIP basado en QDs de InAs/AlGaAs con el que demostramos fotodetección, bajo incidencia normal, en el rango 2-6/xm, activada ópticamente por un diodoe emisor de luz de 590 nm. El estudio teórico del mecanismo de detección asistido por la IB en el OTIP nos lleva a poner en cuestión la asunción de quasi-niveles de Fermi planos en la zona de carga del espacio de una célula solar. Apoyados por simuaciones a nivel de dispositivo, demostramos y explicamos por qué esta asunción no es válida en condiciones de corto-circuito e iluminación. También llevamos a cabo estudios experimentales en QD-IBSCs de InAs/AlGaAs con la finalidad de ampliar el conocimiento sobre algunos aspectos de estos dispositivos que no han sido tratados aun. En particular, analizamos el impacto que tiene el uso de capas de disminución de campo (FDLs, por sus siglas en inglés), demostrando su eficiencia para evitar el escape por túnel de portadores desde el QD al material anfitrión. Analizamos la relación existente entre el escape por túnel y la preservación del voltaje, y proponemos las medidas de eficiencia cuántica en función de la tensión como una herramienta útil para evaluar la limitación del voltaje relacionada con el túnel en QD-IBSCs. Además, realizamos medidas de luminiscencia en función de la temperatura en muestras de InAs/GaAs y verificamos que los resltados obtenidos están en coherencia con la separación de los quasi-niveles de Fermi de la IB y la CB a baja temperatura. Con objeto de contribuir a la capacidad de fabricación y caracterización del Instituto de Energía Solar de la Universidad Politécnica de Madrid (IES-UPM), hemos participado en la instalación y puesta en marcha de un reactor de epitaxia de haz molecular (MBE, por sus siglas en inglés) y el desarrollo de un equipo de caracterización de foto y electroluminiscencia. Utilizando dicho reactor MBE, hemos crecido, y posteriormente caracterizado, la primera QD-IBSC enteramente fabricada en el IES-UPM. ABSTRACT The constituent work of this Thesis is framed in the research on intermediate band solar cells (IBSCs). This concept offers the possibility of achieving devices with high photovoltaic-conversion efficiency. Up to now, the fundamentals of operation of IBSCs have been demonstrated experimentally; however, this has only been possible at low temperatures. The intermediate band (IB) concept demands thermal decoupling between the IB and the valence and conduction bands. Stateof- the-art IB materials exhibit a too strong thermal coupling between the IB and one of the other two bands, which prevents the proper operation of IBSCs at room temperature. In the particular case of InAs/GaAs quantum-dot (QD) IBSCs - as of today, the most widely studied IBSC technology - , there exist fast thermal carrier exchange between the IB and the conduction band (CB), for two reasons: (1) a narrow (< 0.2 eV) energy gap between the IB and the CB, EL, and (2) the existence of multiple electronic levels between them. Reason (1) also implies that maximum achievable efficiency is below the theoretical limit for the ideal IBSC, in which EL = 0.71 eV. In this context, our work focuses on the study of wide-bandgap QD-IBSCs. We have fabricated and experimentally investigated the first QD-IBSC prototypes in which AlGaAs or InGaP is the host material for the InAs QDs. We demonstrate an improved bandgap distribution, compared to the InAs/GaAs case, in our wide-bandgap devices. In particular, we have measured values of EL higher than 0.4 eV. In the case of the AlGaAs prototypes, the increase in EL comes with an increase of more than 100 meV of the activation energy of the thermal carrier escape. In addition, in our InAs/AlGaAs devices, we demonstrate voltage up-conversion; i. e., the production of an open-circuit voltage larger than the photon energy (divided by the electron charge) of the incident monochromatic beam, and the achievement of voltage preservation at room temperature under concentrated white-light illumination. We also analyze the potential of an IB material for infrared detection. We present a IB-based new concept of infrared photodetector that we have called the optically triggered infrared photodetector (OTIP). Our novel device is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. We have fabricated an OTIP based on InAs/AlGaAs QDs with which we demonstrate normal incidence photodetection in the 2-6 /xm range optically triggered by a 590 nm light-emitting diode. The theoretical study of the IB-assisted detection mechanism in the OTIP leads us to questioning the assumption of flat quasi-Fermi levels in the space-charge region of a solar cell. Based on device simulations, we prove and explain why this assumption is not valid under short-circuit and illumination conditions. We perform new experimental studies on InAs/GaAs QD-IBSC prototypes in order to gain knowledge on yet unexplored aspects of the performance of these devices. Specifically, we analyze the impact of the use of field-damping layers, and demonstrate this technique to be efficient for avoiding tunnel carrier escape from the QDs to the host material. We analyze the relationship between tunnel escape and voltage preservation, and propose voltage-dependent quantum efficiency measurements as an useful technique for assessing the tunneling-related limitation to the voltage preservation of QD-IBSC prototypes. Moreover, we perform temperature-dependent luminescence studies on InAs/GaAs samples and verify that the results are consistent with a split of the quasi-Fermi levels for the CB and the IB at low temperature. In order to contribute to the fabrication and characterization capabilities of the Solar Energy Institute of the Universidad Polite´cnica de Madrid (IES-UPM), we have participated in the installation and start-up of an molecular beam epitaxy (MBE) reactor and the development of a photo and electroluminescence characterization set-up. Using the MBE reactor, we have manufactured and characterized the first QD-IBSC fully fabricated at the IES-UPM.

Four-Band Hamiltonian for fast calculations in intermediate-band solar cells

The 8-dimensional Luttinger–Kohn–Pikus–Bir Hamiltonian matrix may be made up of four 4-dimensional blocks. A 4-band Hamiltonian is presented, obtained from making the non-diagonal blocks zero. The parameters of the new Hamiltonian are adjusted to fit the calculated effective masses and strained QD bandgap with the measured ones. The 4-dimensional Hamiltonian thus obtained agrees well with measured quantum efficiency of a quantum dot intermediate band solar cell and the full absorption spectrum can be calculated in about two hours using Mathematica© and a notebook. This is a hundred times faster than with the commonly-used 8-band Hamiltonian and is considered suitable for helping design engineers in the development of nanostructured solar cells.