Fabrication of Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 pedestal type waveguide for optical amplifiers

We report, for the first time to our knowledge, experimental results on pedestal waveguides produced with Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 thin films deposited by RF Sputtering for photonic applications. Thin films were deposited using Ar/O-2 plasma at 5 mTorr pressure and RF power of 40 W on substrates of silicon wafers. The definition of the pedestal waveguide structure was made using conventional optical lithography followed by plasma etching. Propagation losses around 2.0 dB/cm and 2.5 dB/cm were obtained at 633 and 1050 nm, respectively, for waveguides in the 20-100 mu m width range. Single-mode propagation was measured for waveguides width up to 10 mu m and 12 mu m, at 633 nm and 1050 nm, respectively; for larger waveguides widths multi-mode propagation was obtained. Internal gain of 5.6 dB at 1530 nm, under 980 nm excitation, was measured for 1.5 cm waveguide length (similar to 3.7 dB/cm). The present results show the possibility of using Yb3+/Er3+ codoped Bi2O3-WO3-TeO2 pedestal waveguide for optical amplifiers. (C) 2014 Elsevier B.V. All rights reserved.

Optical spectrum of bottom-up graphene nanoribbons: towards efficient atom-thick excitonic solar cells

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

High-throughput sugarcane leaf analysis using a low cost closed-vessel conductively heated digestion system and inductively coupled plasma optical emission spectroscopy

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Correlation between structural and electronic order-disorder effects and optical properties in ZnO nanocrystals

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Efeitos fotocrômico e termocrômico em ormosils dopados com azobenzenos

The sol-gel process and the wide variety of alkoxides commercially available have facilitated the processing of various Organic-Inorganic Hybrid Materials. In general, the hybrids are excellents matrix to incorporate organic or inorganic dopants that presents photochromic, thermochromic, and halochromic effects and in some cases photorefractive effects. The GPTS-TEOS hybrid matrix when deposited in the form of film is very resistant, adherent, has excellent transparency in visible region and allows to be doped with various azo-dye and metal salts of unusual oxidation states. One of the main characteristics of the azo-dyes when immersed in some hybrid matrix , is the capacity to isomerizes through group Azo (-N = N-) would can be commutated between the Cis (Z) and Trans (E) configurations by means of light or heat. Our goal was through the sol-gel process to prepare hybrid films of GPTS-TEOS doped with azo-dyes Methyl Red and Disperse Red 1, and characterize them optically. The characterizations are performed using techniques of UV / Vis spectroscopy, to identify changes in the absorption band of azo-dyes in the presence of optical pumping, (photochromic effects), in function of temperature (thermochromic effect). These properties are of wide scientific and technological interest because they will contribute to the confection Smart Windows (windows sensible to light), temperature sensors monitored optically and also in the recording of amplitude and phase diffraction gratings

Structural and optical properties of Er3+ doped SiO2-Al2O3-GeO2 compounds prepared by a simple route

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

New flexible and transparent solution-based germanium-sulfide polymeric materials

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Structure, Morphology, and Optical Properties of (Cal(1-3x)Eu(2x)) WO4 Microcrystals

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Optical characterization of europium-doped indium hydroxide nanocubes obtained by Microwave-Assisted Hydrothermal method

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Non-centrosymmetric crystals of new N-benzylideneaniline derivatives as potential materials for non-linear optics

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Effect of Zn Sputtering Rate on the Morphological and Optical Properties of ZnO Films

Zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass and silicon substrates by RF magnetron sputtering using a zinc-aluminum target. Both films were deposited at a growth rate of 12.5 nm/min to a thickness of around 750 nm. In the visible region, the films exhibit optical transmittances which are greater than 80%. The optical energy gap of ZnO films increased from 3.28 eV to 3.36 eV upon doping with Al. This increase is related to the increase in carrier density from 5.9 × 1018 cm-3 to 2.6 × 1019 cm-3. The RMS surface roughness of ZnO films grown on glass increased from 14 to 28 nm even with only 0.9% at Al content. XRD analysis revealed that the ZnO films are polycrystalline with preferential growth parallel to the (002) plane, which corresponds to the wurtzite structure of ZnO.

Continuous/Cluster-Pinned Recording Media

We propose and theoretically investigate a new class of nanostructured magnetic recording films, cluster-pinned recording media. The films consist of magnetic clusters exchange coupled to a continuous hard layer with perpendicular anisotropy and low coercivity. Our calculations yield the coercivity and the cross-track correlation length as a function of film thickness and pinning density and strength. The mechanism is very similar to the Gaunt–Friedel pinning in bulk magnets, which differs from ordinary strong pinning by the selfconsistent dependence of wall curvature and coercivity on defect concentration. The main difference is the exponent for the coercivity as a function of the pinning strength, which is equal to 2 in the bulk but equal to 3/2 in thin films. The pinning strength is estimated for various regimes, and it is shown that the diminished domain-wall curvature reduces jitter.

Photopatternable di-ureasil-zirconium oxocluster organic-inorganic hybrids as cost effective integrated optical substrates

Organic-inorganic hybrids containing methacrylic acid (McOH, CH(2)= C(CH(3))COOH)) modified zirconium tetrapropoxide, Zr(OPr(n))(4), classed as di-ureasil-zirconium oxo-cluster hybrids, have been prepared and structurally characterized by X-ray diffraction (XRD), small-angle X-ray scattering (SAXS), Fourier transform infrared (FT-IR) and Raman (FT-Raman) spectroscopies, Si and C nuclear magnetic resonance (NMR), and atomic force microscopy (AFM). XRD and SAXS results have pointed out the presence of Si- and Zr-based nanobuilding blocks (NBBs) dispersed into the organic phase. Inter-NBBs correlation distances have been estimated for the pure di-ureasil and a model compound obtained. by hydrolysis/condensation of Zr(OPr(n))(4):McOH (molar ratio 1: 1): d(Si) approximate to 26 +/- 1 angstrom and d(Zr) approximate to 16 +/- 1 angstrom, respectively. In the case of the di-ureasil-zirconium oxo-cluster hybrids, these distances depend on the Zr relative molar percentage (rel. mol. Zr %) (d(Si) ranges from 18 to 25 angstrom and d(Zr) from 14 to 23 angstrom, as the rel. mol. Zr % increases from 5 to 75), suggesting that the Si- and Zr-based clusters are interconstrained. Complementary data from FT-IR, FT-Raman, (29)Si and (13)C NMR, and AFM support to a structural model where McOH-modified Zr-based NBBs (Zr-OMc) are present over the whole range of composition. At low Zr-OMc contents (rel. mol. Zr % <30) the clusters are well-dispersed within the di-ureasil host, whereas segregation occurs at the 0.1 mu m scale at high Zr-OMc concentration (rel. mol. Zr % = 50). No Zr-O-Si heterocondensation has been discerned. Monomode waveguides, diffractions gratings, and Fabry-Perot cavities have been written through the exposure of the hybrid monoliths to UV light. FT-Raman has shown that the chemical process that takes place under illumination is the polymerization of the methacrylate groups of the Zr-OMc NBBs. The guidance region in patterned channels is a Gaussian section located below the exposed surface with typical dimensions of 320 mu m wide and 88 mu m deep. The effective refractive index is 1.5162 (maximum index contrast on the order of 1 x 10(-4)) and the reflection coeficient of the Fabry-Perot cavity (formed by a grating patterned into a 0.278 cm channel) is 0.042 with a free spectral range value of 35.6 GHz.

Persistent luminescence behavior of materials doped with Eu2+ and Tb3+

In this work, the persistent luminescence mechanisms of Tb3+ (in CdSiO3) and Eu2+ (in BaAl2O4) based on solid experimental data are compared. The photoluminescence spectroscopy shows the different nature of the inter- and intraconfigurational transitions for Eu2+ and Tb3+, respectively. The electron is the charge carrier in both mechanisms, implying the presence of electron acceptor defects. The preliminary structural analysis shows a free space in CdSiO3 able to accommodate interstitial oxide ions needed by charge compensation during the initial preparation. The subsequent annealing removes this oxide leaving behind an electron trap. Despite the low band gap energy for CdSiO3, determined with synchrotron radiation UV-VUV excitation spectroscopy of Tb3+, the persistent luminescence from Tb3+ is observed only with UV irradiation. The need of high excitation energy is due to the position of F-7(6) level deep below the bottom of the conduction band, as determined with the 4f(8)-> 4f(7)5d(1) and the ligand-to-metal charge-transfer transitions. Finally, the persistent luminescence mechanisms are constructed and, despite the differences, the mechanisms for Tb3+ and Eu2+ proved to be rather similar. This similarity confirms the solidity of the interpretation of experimental data for the Eu2+ doped persistent luminescence materials and encourages the use of similar models for other persistent luminescence materials. (C) 2012 Optical Society of America

Persistent luminescence fading in Sr2MgSi2O7:Eu2+,R3+ materials: a thermoluminescence study

The fading of persistent luminescence in Sr2MgSi2O7:Eu2+,R3+ (R: Y, La-Nd, Sm-Lu) was studied combining thermoluminescence (TL) and room temperature (persistent) luminescence measurements to gain more information on the mechanism of persistent luminescence. The TL glow curves showed the main trap signal at ca. 80 degrees C, corresponding to 0.6 eV as the trap depth, with every R co-dopant. The TL measurements carried out with different irradiation times revealed the general order nature of the TL bands. The results obtained from the deconvolutions of the glow curves allowed the prediction of the fading of persistent luminescence with good accuracy, though only when using the Becquerel decay law. (C) 2012 Optical Society of America