COMPLEX GEODESICS, THEIR BOUNDARY REGULARITY, AND A HARDY-LITTLEWOOD-TYPE LEMMA

We begin by giving an example of a smoothly bounded convex domain that has complex geodesics that do not extend continuously up to partial derivative D. This example suggests that continuity at the boundary of the complex geodesics of a convex domain Omega (sic) C-n, n >= 2, is affected by the extent to which partial derivative Omega curves or bends at each boundary point. We provide a sufficient condition to this effect (on C-1-smoothly bounded convex domains), which admits domains having boundary points at which the boundary is infinitely flat. Along the way, we establish a Hardy-Littlewood-type lemma that might be of independent interest.

Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film

We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Curvature Management in Buffer Layer for Device Quality GaN Growth on Si (111)

An efficient buffer layer scheme has been designed to address the issue of curvature management during metalorganic chemical vapour deposition growth of GaN on Si (111) substrate. This is necessary to prevent cracking of the grown layer during post-growth cooling down from growth temperature to room temperature and to achieve an allowable bow (<40 m) in the wafer for carrying out lithographic processes. To meet both these ends simultaneously, the stress evolution in the buffer layers was observed carefully. The reduction in precursor flow during the buffer layer growth provided better control over curvature evolution in the growing buffer layers. This has enabled the growth of a suitable high electron mobility transistor (HEMT) stack on 2'' Si (111) substrate of 300 m thickness with a bow as low as 11.4 m, having a two-dimensional electron gas (2DEG) of mobility, carrier concentration, and sheet resistance values 1510 cm(2)/V-s, 0.96 x 10(13)/cm(2), and 444 /, respectively. Another variation of similar technique resulted in a bow of 23.4 m with 2DEG mobility, carrier concentration, and sheet resistance values 1960 cm(2)/V-s, 0.98 x 10(13)/cm(2), and 325 /, respectively.

Generation of large-scale vortex dislocations in a three-dimensional wake-type flow

Numerical study of three-dimensional evolution of wake-type flow and vortex dislocations is performed by using a compact finite diffenence-Fourier spectral method to solve 3-D incompressible Navier-Stokes equations. A local spanwise nonuniformity in momentum defect is imposed on the incoming wake-type flow. The present numerical results have shown that the flow instability leads to three-dimensional vortex streets, whose frequency, phase as well as the strength vary with the span caused by the local nonuniformity. The vortex dislocations are generated in the nonuniform region and the large-scale chain-like vortex linkage structures in the dislocations are shown. The generation and the characteristics of the vortex dislocations are described in detail.

Vortex breaking and cutting in type II superconductors.

In technological superconductors, the Lorentz force on the flux vortices is opposed by inhomogeneous pinning and so the critical current may be controlled by a combination of vortex entanglement, cutting, and cross-joining. To understand the roles of these processes we report measurements of structures in which a weak pinning layer is sandwiched between two strongly pinning leads. Quantitative modeling of the results demonstrates that in such systems the critical current is limited by the deformation of individual vortices and not by subsequent cross-joining processes.

Insulin analog preparations and their use in children and adolescents with type 1 diabetes mellitus.

Standard or 'traditional' human insulin preparations such as regular soluble insulin and neutral protamine Hagedorn (NPH) insulin have shortcomings in terms of their pharmacokinetic and pharmacodynamic properties that limit their clinical efficacy. Structurally modified insulin molecules or insulin 'analogs' have been developed with the aim of delivering insulin replacement therapy in a more physiological manner. In the last 10 years, five insulin analog preparations have become commercially available for clinical use in patients with type 1 diabetes mellitus: three 'rapid' or fast-acting analogs (insulin lispro, aspart, and glulisine) and two long-acting analogs (insulin glargine and detemir). This review highlights the specific pharmacokinetic properties of these new insulin analog preparations and focuses on their potential clinical advantages and disadvantages when used in children and adolescents with type 1 diabetes mellitus. The fast-acting analogs specifically facilitate more flexible insulin injection timing with regard to meals and activities, whereas the long-acting analogs have a more predictable profile of action and lack a peak effect. To date, clinical trials in children and adolescents have been few in number, but the evidence available from these and from other studies carried out in adults with type 1 diabetes suggest that they offer significant benefits in terms of reduced frequency of nocturnal hypoglycemia, better postprandial blood glucose control, and improved quality of life when compared with traditional insulins. In addition, insulin detemir therapy is unique in that patients may benefit from reduced risk of excessive weight, particularly during adolescence. Evidence for sustained long-term improvements in glycosylated hemoglobin, on the other hand, is modest. Furthermore, alterations to insulin/insulin-like growth factor I receptor binding characteristics have also raised theoretical concerns that insulin analogs may have an increased mitogenic potential and risk of tumor development, although evidence from both in vitro and in vivo animal studies do not support this assertion. Long-term surveillance has been recommended and further carefully designed prospective studies are needed to evaluate the overall benefits and clinical efficacy of insulin analog therapy in children and adolescents with type 1 diabetes.

Structure of Vortex Dislocations in a Wake-type Flow

Structure and dynamical processes of vortex dislocations in a kind of wake-type flow are described clearly by vortex lines, which are directly constructed from data of three-dimensional direct numerical simulations of the flow evolution.

Investigation of Mn-Implanted n-Type Ge

Mn+ irons were implanted to n-type Ge(1 1 1) single crystal at room temperature with an energy of 100 keV and a dose of 3 x 10(16) cm(-2). Subsequently annealing was performed at 400degreesC for 1 h under flowing nitrogen gas. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is restored after annealing. Polycrystalline germanium is formed in annealed sample. There are no new phases found except germanium. The samples surface morphologies indicate that annealed sample has island-like feature while there is no such kind of characteristic in as-implanted sample. The elemental composition of annealed sample was analyzed by Auger electron spectroscopy. It shows that manganese ions are deeply implanted into germanium substrate and the highest manganese atomic concentration is 8% at the depth of 120 nm. The magnetic properties of samples were investigated by an alternating gradient magnetometer. The annealed sample shows ferromagnetic behavior at room temperature.

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an A1N nucleation layer in conjunction with an AlGaN buffer layer for stress management, and together with the interactive use of real time in-situ optical monitoring it was possible to realise flat, crack-free and uniform GaN and LED structures on 6-inch Si (111) substrates. The EL performance of processed LED devices was also studied on-wafer, giving good EL characteristics including a forward bias voltage of ∼3.5 V at 20 mA from a 500 μm × 500 μm device. © 2009 SPIE.

InGaN/GaN LEDs grown on Si(111): Dependence of device performance on threading dislocation density and emission wavelength

We demonstrate the growth of crack-free blue and greenemitting LED structures grown on 2-inch and 6-inch Si(111) substrates by metalorganic vapour phase epitaxy (MOVPE), using AlN nucleation layers and AlGaN buffer layers for stress management. LED device performance and its dependence on threading dislocation (TD) density and emission wavelength were studied. Despite the inherently low light extraction efficiency, an output power of 1.2 mW at 50 mA was measured from a 500 μm square planar device, emitting at 455 nm. The light output decreases dramatically as the emission wavelength increases from 455 nm to 510 nm. For LED devices emitting at similar wavelength, the light output was more than doubled when the TD density was reduced from 5×1 09 cm-2 to 2×109 cm-2. Our results clearly show that high TD density is detrimental to the overall light output, highlighting the need for further TD reduction for structures grown on Si. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

The optical efficiency of GaN-based multiple quantum well (MQW) and light emitting diode (LED) structures grown on Si(111) substrates by metal-organic vapor phase epitaxy was measured and compared with equivalent structures on sapphire. The crystalline quality of the LED structures was comprehensively characterized using x-ray diffraction, atomic force microscopy, and plan-view transmission electron microscopy. A room temperature photoluminescence (PL) internal quantum efficiency (IQE) as high as 58% has been achieved in an InGaN/GaN MQW on Si, emitting at 460 nm. This is the highest reported PL-IQE of a c-plane GaN-based MQW on Si, and the radiative efficiency of this sample compares well with similar structures grown on sapphire. Processed LED devices on Si also show good electroluminescence (EL) performance, including a forward bias voltage of ∼3.5 V at 20 mA and a light output power of 1 mW at 45 mA from a 500 ×500 μm2 planar device without the use of any additional techniques to enhance the output coupling. The extraction efficiency of the LED devices was calculated, and the EL-IQE was then estimated to have a maximum value of 33% at a current density of 4 A cm-2, dropping to 30% at a current density of 40 A cm-2 for a planar LED device on Si emitting at 455 nm. The EL-IQE was clearly observed to increase as the structural quality of the material increased for devices on both sapphire and Si substrates. © 2011 American Institute of Physics.