New optoelectronic devices using GaAs-GaAlAs epitaxy

Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:

1. Embedded Epitaxy

This is a technique of selective multilayer growth of GaAs- Ga_1-xAl_xAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga_1-xAl_xAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm² have been achieved.

2. Barrier Controlled PNPN Laser Diode

It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.

3. Injection Lasers on Semi-Insulating Substrates

GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga_1-xAl_xAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga_1-xAl_xAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.

Optical properties of excited silicon and germanium at low temperatures

Part I of this thesis deals with 3 topics concerning the luminescence from bound multi-exciton complexes in Si. Part II presents a model for the decay of electron-hole droplets in pure and doped Ge.

Part I.

We present high resolution photoluminescence data for Si doped With Al, Ga, and In. We observe emission lines due to recombination of electron-hole pairs in bound excitons and satellite lines which have been interpreted in terms of complexes of several excitons bound to an impurity. The bound exciton luminescence in Si:Ga and Si:Al consists of three emission lines due to transitions from the ground state and two low lying excited states. In Si:Ga, we observe a second triplet of emission lines which precisely mirror the triplet due to the bound exciton. This second triplet is interpreted as due to decay of a two exciton complex into the bound exciton. The observation of the second complete triplet in Si:Ga conclusively demonstrates that more than one exciton will bind to an impurity. Similar results are found for Si:Al. The energy of the lines show that the second exciton is less tightly bound than the first in Si:Ga. Other lines are observed at lower energies. The assumption of ground state to ground-state transitions for the lower energy lines is shown to produce a complicated dependence of binding energy of the last exciton on the number of excitons in a complex. No line attributable to the decay of a two exciton complex is observed in Si:In.

We present measurements of the bound exciton lifetimes for the four common acceptors in Si and for the first two bound multi-exciton complexes in Si:Ga and Si:Al. These results are shown to be in agreement with a calculation by Osbourn and Smith of Auger transition rates for acceptor bound excitons in Si. Kinetics determine the relative populations of complexes of various sizes and work functions, at temperatures which do not allow them to thermalize with respect to one another. It is shown that kinetic limitations may make it impossible to form two-exciton complexes in Si:In from a gas of free excitons.

We present direct thermodynamic measurements of the work functions of bound multi-exciton complexes in Al, B, P and Li doped Si. We find that in general the work functions are smaller than previously believed. These data remove one obstacle to the bound multi-exciton complex picture which has been the need to explain the very large apparent work functions for the larger complexes obtained by assuming that some of the observed lines are ground-state to ground-state transitions. None of the measured work functions exceed that of the electron-hole liquid.

Part II.

A new model for the decay of electron-hole-droplets in Ge is presented. The model is based on the existence of a cloud of droplets within the crystal and incorporates exciton flow among the drops in the cloud and the diffusion of excitons away from the cloud. It is able to fit the experimental luminescence decays for pure Ge at different temperatures and pump powers while retaining physically reasonable parameters for the drops. It predicts the shrinkage of the cloud at higher temperatures which has been verified by spatially and temporally resolved infrared absorption experiments. The model also accounts for the nearly exponential decay of electron-hole-droplets in lightly doped Ge at higher temperatures.

Isotopic fractionation in sputtering

Isotopic fractionation due to sputtering has been investigated via a collector type experiment in which targets of known isotopic composition have been bombarded with several keV Ar⁺ and Xe⁺ ions with fluences down to 3.0x10¹⁴ ions/cm² , believed to be the lowest fluences for which such detailed measurements have ever been made. The isotopes were sputtered onto carbon collectors and analyzed with Secondary Ion Mass Spectroscopy (SIMS.) There is clear indication of preferential effects several times that predicted by the dominant analytical theory. Results also show a fairly strong angular variation in the fractionation. The maximum effect is usually seen in the near normal direction, measured from the target surface, falling continuously, by a few percent in some cases, to a minimum in the oblique direction. Measurements have been made using Mo isotopes: ¹⁰⁰Mo and ⁹²Mo and a liquid metal system of In:Ga eutectic. The light isotope of Mo is found to suffer a 53 ± 5‰ (note: 1.0‰ ≡ 0.1%) enrichment in the sputtered flux in the near normal direction, compared to the steady state near normal sputtered composition, under 5.0 keV Xe⁺ bombardment of 3.0 x 10¹⁴ ions/cm². In the liquid metal study only the angular dependence of the fractionation could be measured due to the lack of a well defined reference and the nature of the liquid surface, which is able to 'repair' itself during the course of a bombardment. The results show that ¹¹³In is preferentially sputtered over ¹¹⁵In in the near normal direction by about 8.7 ± 2.7‰ compared to the oblique direction. ⁶⁹Ga, on the other hand, is sputtered preferentially over ⁷¹Ga in the oblique direction by about 13 ± 4.4‰ with respect to the near normal direction.

Avaliação de proposições matemáticas para interpretação do comportamento de solos residuais não saturados

Nas últimas décadas, teorias têm sido formuladas para interpretar o comportamento de solos não saturados e estas têm se mostrado coerentes com resultados experimentais. Paralelamente, várias técnicas de campo e de laboratório têm sido desenvolvidas. No entanto, a determinação experimental dos parâmetros dos solos não saturados é cara, morosa, exige equipamentos especiais e técnicos experientes. Como resultado, essas teorias têm aplicação limitada a pesquisas acadêmicas e são pouco utilizados na prática da engenharia. Para superar este problema, vários pesquisadores propuseram equações para representar matematicamente o comportamento de solos não saturados. Estas proposições são baseadas em índices físicos, caracterização do solo, em ensaios convencionais ou simplesmente em ajustes de curvas. A relação entre a umidade e a sucção matricial, convencionalmente denominada curva característica de sucção do solo (SWCC) é também uma ferramenta útil na previsão do comportamento de engenharia de solos não saturados. Existem muitas equações para representar matematicamente a SWCC. Algumas são baseadas no pressuposto de que sua forma está diretamente relacionada com a distribuição dos poros e, portanto, com a granulometria. Nestas proposições, os parâmetros são calibrados pelo ajuste da curva de dados experimentais. Outros métodos supõem que a curva pode ser estimada diretamente a partir de propriedades físicas dos solos. Estas propostas são simples e conveniente para a utilização prática, mas são substancialmente incorretas, uma vez que ignoram a influência do teor de umidade, nível de tensões, estrutura do solo e mineralogia. Como resultado, a maioria tem sucesso limitado, dependendo do tipo de solo. Algumas tentativas têm sido feitas para prever a variação da resistência ao cisalhamento com relação a sucção matricial. Estes procedimentos usam, como uma ferramenta, direta ou indiretamente, a SWCC em conjunto com os parâmetros efetivos de resistência c e . Este trabalho discute a aplicabilidade de três equações para previsão da SWCC (Gardner, 1958; van Genuchten, 1980; Fredlund; Xing, 1994) para vinte e quatro amostras de solos residuais brasileiros. A adequação do uso da curva característica normalizada, proposta por Camapum de Carvalho e Leroueil (2004), também foi investigada. Os parâmetros dos modelos foram determinados por ajuste de curva, utilizando técnicas de problema inverso; dois métodos foram usados: algoritmo genético (AG) e Levenberq-Marquardt. Vários parâmetros que influênciam o comportamento da SWCC são discutidos. A relação entre a sucção matricial e resistência ao cisalhamento foi avaliada através de ajuste de curva utilizando as equações propostas por Öberg (1995); Sällfors (1997), Vanapalli et al., (1996), Vilar (2007); Futai (2002); oito resultados experimentais foram analisados. Os vários parâmetros que influênciam a forma da SWCC e a parcela não saturadas da resistência ao cisalhamento são discutidos.

First principles based multiparadigm modeling of electronic structures and dynamics

Electronic structures and dynamics are the key to linking the material composition and structure to functionality and performance.

An essential issue in developing semiconductor devices for photovoltaics is to design materials with optimal band gaps and relative positioning of band levels. Approximate DFT methods have been justified to predict band gaps from KS/GKS eigenvalues, but the accuracy is decisively dependent on the choice of XC functionals. We show here for CuInSe₂ and CuGaSe₂, the parent compounds of the promising CIGS solar cells, conventional LDA and GGA obtain gaps of 0.0-0.01 and 0.02-0.24 eV (versus experimental values of 1.04 and 1.67 eV), while the historically first global hybrid functional, B3PW91, is surprisingly the best, with band gaps of 1.07 and 1.58 eV. Furthermore, we show that for 27 related binary and ternary semiconductors, B3PW91 predicts gaps with a MAD of only 0.09 eV, which is substantially better than all modern hybrid functionals, including B3LYP (MAD of 0.19 eV) and screened hybrid functional HSE06 (MAD of 0.18 eV).

The laboratory performance of CIGS solar cells (> 20% efficiency) makes them promising candidate photovoltaic devices. However, there remains little understanding of how defects at the CIGS/CdS interface affect the band offsets and interfacial energies, and hence the performance of manufactured devices. To determine these relationships, we use the B3PW91 hybrid functional of DFT with the AEP method that we validate to provide very accurate descriptions of both band gaps and band offsets. This confirms the weak dependence of band offsets on surface orientation observed experimentally. We predict that the CBO of perfect CuInSe₂/CdS interface is large, 0.79 eV, which would dramatically degrade performance. Moreover we show that band gap widening induced by Ga adjusts only the VBO, and we find that Cd impurities do not significantly affect the CBO. Thus we show that Cu vacancies at the interface play the key role in enabling the tunability of CBO. We predict that Na further improves the CBO through electrostatically elevating the valence levels to decrease the CBO, explaining the observed essential role of Na for high performance. Moreover we find that K leads to a dramatic decrease in the CBO to 0.05 eV, much better than Na. We suggest that the efficiency of CIGS devices might be improved substantially by tuning the ratio of Na to K, with the improved phase stability of Na balancing phase instability from K. All these defects reduce interfacial stability slightly, but not significantly.

A number of exotic structures have been formed through high pressure chemistry, but applications have been hindered by difficulties in recovering the high pressure phase to ambient conditions (i.e., one atmosphere and room temperature). Here we use dispersion-corrected DFT (PBE-ulg flavor) to predict that above 60 GPa the most stable form of N₂O (the laughing gas in its molecular form) is a 1D polymer with an all-nitrogen backbone analogous to cis-polyacetylene in which alternate N are bonded (ionic covalent) to O. The analogous trans-polymer is only 0.03-0.10 eV/molecular unit less stable. Upon relaxation to ambient conditions both polymers relax below 14 GPa to the same stable non-planar trans-polymer, accompanied by possible electronic structure transitions. The predicted phonon spectrum and dissociation kinetics validate the stability of this trans-poly-NNO at ambient conditions, which has potential applications as a new type of conducting polymer with all-nitrogen chains and as a high-energy oxidizer for rocket propulsion. This work illustrates in silico materials discovery particularly in the realm of extreme conditions.

Modeling non-adiabatic electron dynamics has been a long-standing challenge for computational chemistry and materials science, and the eFF method presents a cost-efficient alternative. However, due to the deficiency of FSG representation, eFF is limited to low-Z elements with electrons of predominant s-character. To overcome this, we introduce a formal set of ECP extensions that enable accurate description of p-block elements. The extensions consist of a model representing the core electrons with the nucleus as a single pseudo particle represented by FSG, interacting with valence electrons through ECPs. We demonstrate and validate the ECP extensions for complex bonding structures, geometries, and energetics of systems with p-block character (C, O, Al, Si) and apply them to study materials under extreme mechanical loading conditions.

Despite its success, the eFF framework has some limitations, originated from both the design of Pauli potentials and the FSG representation. To overcome these, we develop a new framework of two-level hierarchy that is a more rigorous and accurate successor to the eFF method. The fundamental level, GHA-QM, is based on a new set of Pauli potentials that renders exact QM level of accuracy for any FSG represented electron systems. To achieve this, we start with using exactly derived energy expressions for the same spin electron pair, and fitting a simple functional form, inspired by DFT, against open singlet electron pair curves (H₂ systems). Symmetric and asymmetric scaling factors are then introduced at this level to recover the QM total energies of multiple electron pair systems from the sum of local interactions. To complement the imperfect FSG representation, the AMPERE extension is implemented, and aims at embedding the interactions associated with both the cusp condition and explicit nodal structures. The whole GHA-QM+AMPERE framework is tested on H element, and the preliminary results are promising.

Sensitivity of sturgeons to environmental hypoxia: a review of physiological and ecological evidence

In this essay, three lines of evidence are developed that sturgeons in the Chesapeake Bay and elsewhere are unusually sensitive to hypoxic conditions: 1. In comparison to other fishes,sturgeons have a limited behavioral and physiological capacity to respond to hypoxia. Basal metabolism, growth, feeding rate, and survival are sensitive to changes in oxygen level, which may indicate a relatively poor ability of sturgeons to oxyregulate. 2. During summertime, temperatures >20°C amplify the effect of hypoxia on sturgeons and other fishes due to a temperature oxygen "squeeze" (Coutant 1987). In bottom waters, this interaction results in substantial reduction of habitat; in dry years, sturgeon nursery habitats in the Chesapeake Bay may be particularly reduced or even eliminated. 3. While evidence for population level effects due to hypoxia is circumstantial, there are corresponding trends between the absence of Atlantic sturgeon reproduction in estuaries like the Chesapeake Bay where summertime hypoxia predominates on a system-wide scale. Also, the recent and dramatic recovery of shortnose sturgeon in the Hudson River (4-bid increase in abundance from 1980 to1995) may have been stimulated by improvement of a large portion of the nursery habitat that was restored from hypoxia to normoxia during the period 1973-1978.

Studies of the representation of interatomic distances in molecules and crystal as sum of atomic radii

The electron diffraction investigation of the following compounds has been carried out: sulfur, sulfur nitride, realgar, arsenic trisulfide, spiropentane, dimethyltrisulfide, cis and trans lewisite, methylal, and ethylene glycol.

The crystal structures of the following salts have been determined by x-ray diffraction: silver molybdateand hydrazinium dichloride.

Suggested revisions of the covalent radii for B, Si, P, Ge, As, Sn, Sb, and Pb have been made, and values for the covalent radii of Al, Ga, In, Ti, and Bi have been proposed.

The Schomaker-Stevenson revision of the additivity rule for single covalent bond distances has been used in conjunction with the revised radii. Agreement with experiment is in general better with the revised radii than with the former radii and additivity.

The principle of ionic bond character in addition to that present in a normal covalent bond has been applied to the observed structures of numerous molecules. It leads to a method of interpretation which is at least as consistent as the theory of multiple bond formation.

The revision of the additivity rule has been extended to double bonds. An encouraging beginning along these lines has been made, but additional experimental data are needed for clarification.

Cómo puede influir la política económica en el nivel y el crecimiento del nivel de vida? Algunas medidas para fomentar el crecimiento económico

En este trabajo se ha utilizado el modelo de Solow con el objetivo de estudiar el crecimiento económico. Se define la tasa de ahorro de la regla de oro (aquella que permite un mayor consumo para los individuos) y se calcula el capital, el consumo y la producción en el estado estacionario. Basándonos en el modelo de Solow y mediante un ejercicio, mostramos que cuando la tasa de crecimiento del progreso tecnológico, gA, es positiva y crece de una forma continuada, obtiene aumentos de todas las variables (consumo, producción y capital) también de una forma continuada. Por el contrario, si el estado de la tecnología, A, aumentase solo en un periodo, obtendríamos un valor mayor para cada variable pero este aumento no se mantendría de forma continuada, ya que las tasas de crecimiento volverían a su nivel inicial. Finalmente proponemos diferentes medidas para fomentar el crecimiento económico, entre las que destacan el fomento del progreso tecnológico, gA, y la inversión en capital público y capital humano.

Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

Electrical and optical investigations of beta-gallium oxide

An experimental investigation of the optical properties of β–gallium oxide has been carried out, covering the wavelength range 220-2500 nm.

The refractive index and birefringence have been determined to about ± 1% accuracy over the range 270-2500 nm, by the use of a technique based on the occurrence of fringes in the transmission of a thin sample due to multiple internal reflections in the sample (ie., the "channelled spectrum" of the sample.)

The optical absorption coefficient has been determined over the range 220 - 300 nm, which range spans the fundamental absorption edge of β – Ga₂O₃. Two techniques were used in the absorption coefficient determination: measurement of transmission of a thin sample, and measurement of photocurrent from a Schottky barrier formed on the surface of a sample. Absorption coefficient was measured over a range from 10 to greater than 10⁵, to an accuracy of better than ± 20%. The absorption edge was found to be strongly polarization-dependent.

Detailed analyses are presented of all three experimental techniques used. Experimentally determined values of the optical constants are presented in graphical form.

Algoritmos genéticos aplicados ao projeto de filtros com coeficientes em soma de potências de dois

Esta dissertação tem como objetivo aplicar um algoritmo genético (GA) ao projeto de filtros FIR com coeficientes quantizados representados em somas de potências de dois com sinal (SPT). Os filtros FIR apresentam configurações que permitem a obtenção de fase linear, atributo desejado em diversas aplicações que necessitam de atraso de grupo constante. A representação SPT, de fácil implementação em circuitos, foi discutida e uma comparação das representações SPT mínimas e canônicas foi feita, baseada no potencial de redução de operações e na variedade de valores representáveis. O GA é aplicado na otimização dos coeficientes SPTs do filtro, para que este cumpra as suas especificações de projeto. Foram feitas análises sobre o efeito que diversos parâmetros do GA como a intensidade de seleção, tamanho das populações, cruzamento, mutação, entre outros, têm no processo de otimização. Foi proposto um novo cruzamento que produz a recombinação dos coeficientes e que obteve bons resultados. Aplicou-se o algoritmo obtido na produção de filtros dos tipos passa-baixas, passa-altas, passa-faixas e rejeita-faixas.