Plasma enhanced chemical vapour deposited carbon nanotubes for field emission applications

Plasma Enhanced Chemical Vapour Deposition is an extremely versatile technique for directly growing multiwalled carbon nanotubes onto various substrates. We will demonstrate the deposition of vertically aligned nanotube arrays, sparsely or densely populated nanotube forests, and precisely patterned arrays of nanotubes. The high-aspect ratio nanotubes (∼50 nm in diameter and 5 microns long) produced are metallic in nature and direct contact electrical measurements reveal that each nanotube has a current carrying capacity of 107-108 A/cm2, making them excellent candidates as field emission sources. We examined the field emission characteristics of dense nanotube forests as well as sparse nanotube forests and found that the sparse forests had significantly lower turn-on fields and higher emission currents. This is due to a reduction in the field enhancement of the nanotubes due to electric field shielding from adjacent nanotubes in the dense nanotube arrays. We thus fabricated a uniform array of single nanotubes to attempt to overcome these issues and will present the field emission characteristics of this.

Electrical and field emission investigation of individual carbon nanotubes from plasma enhanced chemical vapour deposition

Plasma enhanced chemical vapour deposition (PECVD) is a controlled technique for the production of vertically aligned multiwall carbon nanotubes for field emission applications. In this paper, we investigate the electrical properties of individual carbon nanotubes which is important for designing field emission devices. PECVD nanotubes exhibit a room temperature resistance of 1-10 kΩ/μm length (resistivity 10-6 to 10-5 Ω m) and have a maximum current carrying capability of 0.2-2 mA (current density 107-108 A/cm2). The field emission characteristics show that the field enhancement of the structures is strongly related to the geometry (height/radius) of the structures and maximum emission currents of ∼ 10 μA were obtained. The failure of nanotubes under field emission is also discussed. © 2002 Elsevier Science B.V. All rights reserved.

Athermal colourless C-band optical transmitter for passive optical networks

A new control algorithm with reduced mode-hopping is demonstrated for uncooled WDM C-band channel generation from a DS-DBR laser with 100GHz spacing and low thermal drift up to 70°C. 10Gb/s external modulation with transmission over a 25km link is achieved. ©2010 IEEE.

An Approximate Method for Evaluating the Shear Band Thickness in Saturated Soils

formula for the thickness of a shear band formed in saturated soils under a simple shear or a combined stress state has been proposed. It is shown that the shear band thickness is dependent on the pore pressure properties of the material and the dilatancy rate, but is independent of the details of the combined stress state. This is in accordance with some separate experimental observations.

Formation of adiabatic shear band in metal matrix composites

A modified single-pulse loading split Hopkinson torsion bar (SSHTB) is introduced to investigate adiabatic shear banding behavior in SiCp particle reinforced 2024 Al composites in this work. The experimental results showed that formation of adiabatic shear band in the composite with smaller particles is more readily observed than that in the composite with larger particles. To characterize this size-dependent deformation localization behavior of particle reinforced metal matrix composites (MMCp), a strain gradient dependent shear instability analysis was performed. The result demonstrated that high strain gradient provides a deriving force for the formation of adiabatic shear banding in MMCp. (C) 2004 Elsevier Ltd. All rights reserved.

A unified model for dislocation nucleation, dislocation emission and dislocation free zone

In this paper, a unified model for dislocation nucleation, emission and dislocation free zone is proposed based on the Peierls framework. Three regions are identified ahead of the crack tip. The emitted dislocations, located away from the crack tip in the form of an inverse pileup, define the plastic zone. Between that zone and the cohesive zone immediately ahead of the crack tip, there is a dislocation free zone. With the stress field and the dislocation density field in the cohesive zone and plastic zone being, respectively, expressed in the first and second Chebyshev polynomial series, and the opening and slip displacements in trigonometric series, a set of nonlinear algebraic equations can be obtained and solved with the Newton-Raphson Method. The results of calculations for pure shearing and combined tension and shear loading after dislocation emission are given in detail. An approximate treatment of the dynamic effects of the dislocation emission is also developed in this paper, and the calculation results are in good agreement with those of molecular dynamics simulations.