Enhanced electron-electron correlations in nanometric epitaxial SrRuO3 epitaxial films

Epitaxial and fully strained SrRuO3 thin films have been grown on SrTiO3(100). At initial stages the growth mode is three-dimensional- (3D-)like, leading to a finger-shaped structure aligned with the substrate steps and that eventually evolves into a 2D step-flow growth. We study the impact that the defect structure associated with this unique growth mode transition has on the electronic properties of the films. Detailed analysis of the transport properties of nanometric films reveals that microstructural disorder promotes a shortening of the carrier mean free path. Remarkably enough, at low temperatures, this results in a reinforcement of quantum corrections to the conductivity as predicted by recent models of disordered, strongly correlated electronic systems. This finding may provide a simple explanation for the commonly observed¿in conducting oxides-resistivity minima at low temperature. Simultaneously, the ferromagnetic transition occurring at about 140 K, becomes broader as film thickness decreases down to nanometric range. The relevance of these results for the understanding of the electronic properties of disordered electronic systems and for the technological applications of SrRuO3¿and other ferromagnetic and metallic oxides¿is stressed.

Thermohaline variability in the upper layers of the Arabian Sea

The Arabian Sea is an area of complex air-sea interaction processes with seasonal reversing monsoons. The associated thermohaline variability in the upper layers appears to control the large scale monsoon flow which is not yet completely understood. The variability in the thermohaline fields is known to occur in temporal domain ranging from intra-diurnal to inter-annual time scales and on spatial domains of few tens of kilometers to few thousands of kilometers. In the Arabian Sea though the surface temperature was routinely measured by both conventional measurements and satellites, the corresponding information on the subsurface thermohaline field is very sparse due to the lack cw adequate measurements. In such cases the numerical models offer promise in providing information on the subsurface features given an initial thermohaline field and surface heat flux boundary conditions. This thesis is an outcome of investigations carried out on the various aspects of the thermohaline variability on different time scales. In addition to the description of the mean annual cycle. the one dimensional numerical models of Miller (1976) and Price et a1 (1986) are utilised to simulate the observed mixed layer characteristics at selected locations in the Arabian Sea on time scales ranging from intra-diurnal to synoptic scales under variable atmospheric forcing.

Studies on High- Tc Superconductors with Inequivalent Conducting Layers

The thesis deals with the study of super conducting properties of layered cuprates within the frame work of a modified Lawrence-Doniach (LD) model. The thesis is organized in seven chapters. Chapter I is a survey of the phenomena and theories of conventional superconductivity which can serve as a springboard for launching the study of the new class of oxide superconductors and it also includes a chronological description of the efforts made to overcome the temperature barrier. Chapter II deals with the structure and properties of the copper oxide superconductors and also the experimental constraints on the theories of high te:::nperature superconductivity. A modified Lawrence-Doniach type of phenomenological model which forms the basis of the presnt study is also discussed. In chapter III~ the temperature dependence of the upper critical field both parallel and perpendicular to the layers is determined and the results are compared with d.c. magnetization measurements on different superconducting compoilllds. The temperature and angular dependence of the lower critical field both parallel and perpendicular to the layers is also discussed. Chapters IV, V and VI deal with thermal fluctuation effects on superconducting properties. Fluctuation specific heat is studied in chapter IV. Paraconductivity both parallel and perpendicular to the layers is discussed in chapter V. Fluctuation diamagnetism is dealt with in chapter VI. Dimensional cross over in the fluctuation regime of all these quantities is also discussed. Chapter VII gives a summary of the results and the conclusions arrived at.

Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase, p-type, stoichiometric, SnS films with direct band gap of 1.33 eV and having very high absorption coefficient (N105/cm) were deposited at substrate temperature of 375 °C. The role of substrate temperature in determining the optoelectronic and structural properties of SnS films was established and concentration ratios of anionic and cationic precursor solutions were optimized. n-type SnS samples were also prepared using CSP technique at the same substrate temperature of 375 °C, which facilitates sequential deposition of SnS homojunction. A comprehensive analysis of both types of films was done using x-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurements. Deposition temperatures required for growth of other binary sulfide phases of tin such as SnS2, Sn2S3 were also determined

Anisotropic adaptive resolution of boundary layers for heat conduction problems

We deal with the numerical solution of heat conduction problems featuring steep gradients. In order to solve the associated partial differential equation a finite volume technique is used and unstructured grids are employed. A discrete maximum principle for triangulations of a Delaunay type is developed. To capture thin boundary layers incorporating steep gradients an anisotropic mesh adaptation technique is implemented. Computational tests are performed for an academic problem where the exact solution is known as well as for a real world problem of a computer simulation of the thermoregulation of premature infants.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates

The periodic silane burst technique was employed during metalorganic chemical vapor deposition of epitaxial GaN on AlN buffer layers grown on Si (111). Periodic silicon delta doping during growth of both the AlN and GaN layers led to growth of GaN films with decreased tensile stresses and decreased threading dislocation densities, as well as films with improved quality as indicated by x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. The possible mechanism of the reduction of tensile stress and the dislocation density is discussed in the paper.

Adobe Photoshop : Adjustment and Fill Layers

Find out more about Photoshop Adjustment and Fill Layers with this share of video tutorials.

Layers of generality and types of generalization in pattern activities. 'Niveles de generalidad y tipos de generalizaciones en actividades de patrones'.

Resumen basado en el de la publicación

The biometeorology of high-altitude insect layers.

Flight at high altitude is part of a migration strategy that maximises insect population displacement. This thesis represents the first substantial analysis of insect migration and layering in Europe. Vertical-looking entomological radar has revealed specific characteristics of high-altitude flight: in particular layering (where a large proportion of the migrating insects are concentrated in a narrow altitude band). The meteorological mechanisms underpinning the formation of these layers are the focus of this thesis. Aerial netting samples and radar data revealed four distinct periods of high-altitude insect migration: dawn, daytime, dusk, and night-time. The most frequently observed nocturnal profiles during the summertime were layers. It is hypothesised that nocturnal layers initiate at a critical altitude (200–500 m above ground level) and time (20:00–22:00 hours UTC). Case study analysis, statistical analysis, and a Lagrangian trajectory model showed that nocturnal insect layers probably result from the insects’ response to meteorological conditions. Temperature was the variable most correlated with nocturnal insect layer presence and intensity because insects are poikilothermic, and temperatures experienced during high-altitude migration in temperate climates are expected to be marginal for many insects’ flight. Hierarchical effects were detected such that other variables—specifically wind speed—were only correlated with insect layer presence and intensity once temperatures were warm. The trajectory model developed comprised: (i) insect flight characteristics; (ii) turbulent winds (which cause vertical spread of the layer); and (iii) mean wind speed, which normally leads to horizontal displacements of hundreds of kilometres in a single migratory flight. This thesis has revealed that there is considerable migratory activity over the UK in the summer months, and a range of fascinating phenomena can be observed (including layers). The UK has moved from one of the least studied to perhaps the best studied environments of aerial insect migration and layering in the world.