豢养长江江豚性行为的观察

2001年12月至2002年11月作者采用焦点动物取样法对豢养池中3头长江江豚(1♂,2♀)的性行为进行了持续1年的水下观察。结果表明:雄性江豚生殖器全年均有伸出行为,4～5月和9～10月为高峰期。其生殖器伸出方式主要有侧伸、弓伸、仰伸、下伸和竖伸5种方式。豢养池中的气压、光照、池水透明度和pH值能基本满足江豚性活动的要求。

pH对萼花臂尾轮虫种群动态和休眠卵的影响

应用种群累积培养法,研究了pH3.5～11.5(间隔1.0)之间萼花臂尾轮虫(Brachionuscalyciflorus)的种群动态及休眠卵的形成。结果表明,该轮虫在pH5.5～10.5为正增长,pH7.5时种群增长趋势最好;pH4.5时为负增长;pH3.5和11.5分别是该轮虫存活下限和上限。pH对轮虫休眠卵的产量和形成效率、平均混交雌体百分率和受精率皆具极显著影响。7.5是该种轮虫休眠卵规模化生产的最佳pH值,此时休眠卵的产量和藻类食物的形成效率最大,分别为(132567±20264)/(20ml·

萘及其衍生物对普通小球藻的毒性效应

本文研究了荣及其衍生物（萘、1-萘酚、2-萘酚和1-萘胺）对普通小球藻的生长、叶绿素，含量、光合强度和呼吸强度的影响，萘、1-萘酚和1-萘胺在低浓度下能促进普通小球藻的生长，高浓度则抑制藻的生长；2-萘酚在实验浓度下都抑制藻的生长．萘、1-萘酚、2-萘酚和1-萘胺的96hEC50分别为98．06、11．87、13．39和6．95mg／L．萘及其衍生物对叶绿素含量和光合强度的影响比对生长的影响强，而对叶绿素含量的影响又比对光合强度的影响强．可以这样认为：萘及其衍生物对普通小球藻生长的抑制是通过抑制藻叶绿素a

异育银鲫对鱼粉等11种饲料中磷的利用率

于1988年,以三氧化二铬间接指示法,在水温22±2℃条件下,测定了平均体重为55±5g/尾的异育银鲫对鱼粉、肉骨粉、芝麻饼、虾粉、骨粉、菜籽饼、玉米粉、脱氟磷酸氢钙、磷酸二氢钙、磷酸氢钙、磷酸钙的表观消化吸收率。结果表明:异育银鲫对第一、第二、第三磷酸钙的消化吸收率是不同的,分别为81％,65％和32％,此顺序与其溶解性由大到小的顺序一致;在所测试的八种商品饲料中,对骨粉、虾粉和菜籽饼中磷的表观消化吸收率较高,分别为65％,68％和65％;对鱼粉、芝麻饼、肉骨粉三种原料中磷的表观消化吸收率较低,分别是1

鱼苗养成夏花的成活率高达98.99％—水生生物研究所初步试验成功新的饲养方法

<正> 鱼苗养成夏花的成活率,过去一般只有50%左右,有些低的还不到10%。这是发展淡水养鱼生产的巨大障碍之一。湖北省每年从江中捕获鱼苗很多,留养的数量也很大,但每年大湖放养的鱼种,还要向外省购进。这便说明提高鱼苗养成夏花、养咸鱼种的成活率的重要意义了。我所鱼病学组的工作者,在党的支持下,进行了提高鱼苗养成夏花成活率的饲养方法的试验,已获得良好

Polishing Treatment of Molasses Wastewater with Iron Salts: the Role of Counter-ions

The effect of counter-ions on the coagulation of biologically treated molasses wastewater using iron-based coagulants was investigated. Parameters such as removals of chemical oxygen demand (COD) and color, and residual turbidity, were measured to evaluate coagulation performance. Experimental results showed that ferric chloride and ferric nitrate were more effective than ferric sulfate at optimal dosages, achieving 89 to 90% and 98 to 99% of COD and color removals, respectively, with residual turbidity of less than 5 NTU. High-performance size exclusion chromatography (HPSEC) results revealed differences in the removal of the molecular weight fraction of organic compounds using iron salts. Scanning electron microscopy (SEM) showed randomly formed coagulated flocs characterized with irregular, sheet-like shapes. Nitrate and chloride counter-ions had similar effects on coagulation performance compared to sulfate. Both FeCl3 and Fe(NO3)(3) yielded better results than Fe(SO4)(2) under underdosed and optimum dosage conditions. Coagulation efficiency was less adversely affected in the overdosed regions, however, if sulfate rather than chloride or nitrate was present. Water Environ. Res., 81, 2293 (2009).

Isolation and characterization of microsatellites in Chinese soft-shelled turtle, Pelodiscus sinensis

Fifteen polymorphic microsatellite loci were developed for the Chinese soft-shelled turtle (Pelodiscus sinensis) from the (GT)(n) microsatellite-enriched genomic library, using the fast isolation by amplified fragment length polymorphism of sequences containing repeats protocol. The polymorphism of all 15 loci ranged from two to seven alleles with observed heterozygosities ranging from 0.03 to 0.98 (mean 0.43) in one population of 40 individuals. These novel loci will be helpful for understanding the population structure at genetic level and marker-assisted breeding of this vulnerable species.

Energy budget of Nile tilapia (Oreochromis niloticus) in relation to ration size

Nile tilapia weighing 8.29-11.02 g were fed a practical diet at seven ration levels (starvation, 0.5, 1, 2, 3, 4% body weight per day and satiation) twice a day at 30 degrees C. Feed consumption, apparent digestibility, nitrogenous excretion and growth were determined directly, and heat production was calculated by difference of energy budget. The relationship between specific growth rate in wet weight (SGR(w), percentage per day) and ration size (RL, percentage per day) was a decelerating curve described as SGR(w) = 2.98 (1 - e(-0.61(RL-0.43))). The apparent digestibility coefficients for dry matter and protein showed a decreasing pattern with increasing ration while the apparent digestibility coefficient of energy was not significantly affected by ration size. The proportion of gross energy intake lost in nitrogenous excretion tended to decrease with increasing ration. Feed efficiency was highest, and the proportion of gross energy intake channelled to heat production was lowest, at an intermediate ration level (2% per day). The energy budget at the satiation level was: 100IE = 16.9FE + 1.2(ZE + UE) + 62.3HE + 19.6RE, where IE, FE, (ZE + UE), HE and RE represent gross energy intake, faecal energy, excretory (non-faecal) energy loss, heat production and recovered energy (growth), respectively. (C) 1997 Elsevier Science B.V.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition

Investigations on photoluminescence properties of (11 (2) over bar0) GaN grown on (1 (1) over bar 02) Al2O3 substrate by metalorganic chemical-vapor deposition are reported. Several emission lines not reported before are observed at low temperature. The sharp peak at 3.359 eV is attributed to the exciton bound to the neutral acceptor. Another peak at 3.310 eV represents a free-to-bound, probably a free electron-to-acceptor, transition. The 3.241 and 3.170 eV lines are interpreted as phonon replica lines of the 3.310 eV line. The phonon energy is 70 meV, consistent with the energy of transverse optical E-1 phonon. The optical properties of the lines are analyzed. (C) 2003 American Institute of Physics.

Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m)

In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measurement of high-power and high-brightness strained quantum-well lasers emitting at 0.98 mum, The material system of interest consists of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. Some key parameters of the laser structure are theoretically analyzed, and their effects on the laser performance are discussed. The laser material is grown by metal-organic chemical vapor deposition and demonstrates high quality with low-threshold current density, high internal quantum efficiency, and extremely low internal loss. High-performance broad-area multimode and ridge-waveguide single-mode laser devices are fabricated. For 100-mum-wide stripe lasers having a cavity length of 800 mum, a high slope efficiency of 1.08 W-A, a low vertical beam divergence of 34 degrees, a high output power of over 4.45 W, and a very high characteristic temperature coefficient of 250 K were achieved. Lifetime tests performed at 1.2-1.3 W (12-13 mW/mum) demonstrates reliable performance. For 4-mum-wide ridge waveguide single-mode laser devices, a maximum output power of 394 mW and fundamental mode power up to 200 mW with slope efficiency of 0.91 mW/mum are obtained.

Interference effects in differential reflectance spectra of the GaAs epilayers grown on Si substrate

We report the observation of oscillating features in differential reflectance spectra from the GaAs epilayer grown on Si substrate in the energy range both below and above the fundamental band gap. It is demonstrated that the oscillating features are due to the difference in the interference between two neighboring areas of the sample. The interference arises from two light beams reflected from different interfaces of the sample. The calculated spectra in the nonabsorption region are in good agreement with measured data. It is shown that the interference effect can be used as a sensitive method to characterize the inhomogeneity of the semiconductor heterostructures. (C) 1998 American Institute of Physics. [S0021-8979(98)08723-4].

Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors

We report the device performance of normal-incidence (In, Ga)As/GaAs quantum dot intersubband infrared photodetectors. A primary intersubband transition peak is observed at the wavelength of 13 mu m (E-0 --> E-1) and a secondary peak at 11 mu m (E-0 --> E-2). The measured energy spacing in the conduction band of the quantum dots is in good agreement with low temperature photoluminescence measurement and calculations. A peak detectivity of 1 x 10(10) cm Hz(1/2)/W at 13 mu m was achieved at 40 K for these devices. (C) 1998 American Institute of Physics. [S0003-6951(98)01440-5].