Necessity for quatum simulation for future technology nodes

In this paper we present and compare the results obtained from semi-classical and quantum mechanical simulation for a double gate MOSFET structure to analyze the electrostatics and carrier dynamics of this device. The geometries like gate length, body thickness of this device have been chosen according to the ITRS specification for the different technology nodes. We have shown the extent of deviation between the semi- classical and quantum mechanical results and hence the need of quantum simulations for the promising nanoscale devices in the future technology nodes predicted in ITRS.

A Simulation Based Study and Analysis of Double Gate Tunnel FET Performance for Low Stand-By Power Applications

The conventional metal oxide semiconductor field effect transistor (MOSFET)may not be suitable for future low standby power (LSTP) applications due to its high off-state current as the sub-threshold swing is theoretically limited to 60mV/decade. Tunnel field effect transistor (TFET) based on gate controlled band to band tunneling has attracted attention for such applications due to its extremely small sub-threshold swing (much less than 60mV/decade). This paper takes a simulation approach to gain some insight into its electrostatics and the carrier transport mechanism. Using 2D device simulations, a thorough study and analysis of the electrical parameters of the planar double gate TFET is performed. Due to excellent sub-threshold characteristics and a reverse biased structure, it offers orders of magnitude less leakage current compared to the conventional MOSFET. In this work, it is shown that the device can be scaled down to channel lengths as small as 30 nm without affecting its performance. Also, it is observed that the bulk region of the device plays a major role in determining the sub-threshold characteristics of the device and considerable improvement in performance (in terms of ION/IOFF ratio) can be achieved if the thickness of the device is reduced. An ION/IOFF ratio of 2x1012 and a minimum point sub-threshold swing of 22mV/decade is obtained.

Spectral Efficiency of Channel-Aware Schedulers in Non-identical Composite Links with Interference

Accurate system planning and performance evaluation requires knowledge of the joint impact of scheduling, interference, and fading. However, current analyses either require costly numerical simulations or make simplifying assumptions that limit the applicability of the results. In this paper, we derive analytical expressions for the spectral efficiency of cellular systems that use either the channel-unaware but fair round robin scheduler or the greedy, channel-aware but unfair maximum signal to interference ratio scheduler. As is the case in real deployments, non-identical co-channel interference at each user, both Rayleigh fading and lognormal shadowing, and limited modulation constellation sizes are accounted for in the analysis. We show that using a simple moment generating function-based lognormal approximation technique and an accurate Gaussian-Q function approximation leads to results that match simulations well. These results are more accurate than erstwhile results that instead used the moment-matching Fenton-Wilkinson approximation method and bounds on the Q function. The spectral efficiency of cellular systems is strongly influenced by the channel scheduler and the small constellation size that is typically used in third generation cellular systems.