Point injection in trench insulated gate bipolar transistor for ultra low losses

In this paper we propose novel designs that enhance the plasma concentration across the Field Stop IGBT. The "p-ring" and the "point-injection" type devices exhibit increased cathode side conductivity modulation which results in impressive IGBT performance improvement. These designs are shown to be extremely effective in lowering the on-state losses without compromising the switching performance or the breakdown rating. For the same switching losses we can achieve more than 20% reduction of the on state energy losses compared to the conventional FS IGBT. © 2012 IEEE.

Generating the Sparse Point Cloud of a Civil Infrastructure Scene Using a Single Video Camera under Practical Constraints

Automating the model generation process of infrastructure can substantially reduce the modeling time and cost. This paper presents a method to generate a sparse point cloud of an infrastructure scene using a single video camera under practical constraints. It is the first step towards establishing an automatic framework for object-oriented as-built modeling. Motion blur and key frame selection criteria are considered. Structure from motion and bundle adjustment are explored. The method is demonstrated in a case study where the scene of a reinforced concrete bridge is videotaped, reconstructed, and metrically validated. The result indicates the applicability, efficiency, and accuracy of the proposed method.

Sparsity-Inducing Optimization Algorithm for the Extraction of Planar Structures in Noisy Point-Cloud Data

Most of the manual labor needed to create the geometric building information model (BIM) of an existing facility is spent converting raw point cloud data (PCD) to a BIM description. Automating this process would drastically reduce the modeling cost. Surface extraction from PCD is a fundamental step in this process. Compact modeling of redundant points in PCD as a set of planes leads to smaller file size and fast interactive visualization on cheap hardware. Traditional approaches for smooth surface reconstruction do not explicitly model the sparse scene structure or significantly exploit the redundancy. This paper proposes a method based on sparsity-inducing optimization to address the planar surface extraction problem. Through sparse optimization, points in PCD are segmented according to their embedded linear subspaces. Within each segmented part, plane models can be estimated. Experimental results on a typical noisy PCD demonstrate the effectiveness of the algorithm.

Recovering 3D Structure of Poorly Textured Infrastructure Scenes Using Point and Line Features

Most of the existing automated machine vision-based techniques for as-built documentation of civil infrastructure utilize only point features to recover the 3D structure of a scene. However it is often the case in man-made structures that not enough point features can be reliably detected (e.g. buildings and roofs); this can potentially lead to the failure of these techniques. To address the problem, this paper utilizes the prominence of straight lines in infrastructure scenes. It presents a hybrid approach that benefits from both point and line features. A calibrated stereo set of video cameras is used to collect data. Point and line features are then detected and matched across video frames. Finally, the 3D structure of the scene is recovered by finding 3D coordinates of the matched features. The proposed approach has been tested on realistic outdoor environments and preliminary results indicate its capability to deal with a variety of scenes.

Scale-invariant vote-based 3D recognition and registration from point clouds

This chapter presents a method for vote-based 3D shape recognition and registration, in particular using mean shift on 3D pose votes in the space of direct similarity transformations for the first time. We introduce a new distance between poses in this spacethe SRT distance. It is left-invariant, unlike Euclidean distance, and has a unique, closed-form mean, in contrast to Riemannian distance, so is fast to compute. We demonstrate improved performance over the state of the art in both recognition and registration on a (real and) challenging dataset, by comparing our distance with others in a mean shift framework, as well as with the commonly used Hough voting approach. © 2013 Springer-Verlag Berlin Heidelberg.

Evidence for X(5) critical point symmetry in 128Ce

Lifetimes of excited states in 128Ce were measured using the recoil distance Doppler-shift (RDDS) and the Doppler-shift attenuation (DSAM) methods. The experiments were performed at the Wright Nuclear Structure Laboratory of Yale University. Excited states of 128Ce were populated in the 100Mo(32Si,4n) reaction at 120 MeV and the nuclear γ decay was measured with an array of eight Clover detectors positioned at forward and backward angles. The deduced yrast transition strengths together with the energies of the levels within the ground-state (gs) band of 128Ce are in agreement with the predicted values for the X(5) critical point symmetry. Thus, we suggest 128Ce as a benchmark X(5) nucleus in the mass A ≈ 130 region. © World Scientific Publishing Company.

Properties of trench defects in InGaN/GaN quantum well structures

The structural and optical properties of trench defects, which are poorly understood yet commonly occurring defects observed on the surfaces of InGaN multiple quantum wells (MQW), are reported. These defects comprise near-circular trenches which enclose areas of MQW which give rise to a red shift in peak photoluminescence emission and a change in cathodoluminescence intensity with respect to the surrounding material. Atomic force microscopy shows that the height of trench-enclosed areas differs from that of the surrounding quantum well structure, and that trenches are unrelated to the commonly observed V-defects in InGaN films, despite being occasionally intersected by them. Cross-sectional electron microscopy analysis of trenches with raised centres suggests that the red shift in the observed cathodoluminescence peak emission may be due to the quantum wells being thicker in the trench-enclosed regions than in the surrounding quantum well area. The mechanism of trench formation and its implication for the control of the emission properties of light-emitting diodes is discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

End-of-range defects in germanium and their role in boron deactivation

We investigated the thermal evolution of end-of-range (EOR) defects in germanium and their impact on junction thermal stability. After solid-phase epitaxial regrowth of a preamorphized germanium layer, EOR defects exhibiting dislocation loop-like contrast behavior are present. These defects disappear during thermal annealing at 400 °C, while boron electrical deactivation occurs. After the whole defect population vanishes, boron reactivation is observed. These results indicate that germanium self-interstitials, released by EOR defects, are the cause of B deactivation. Unlike in Si, the whole deactivation/reactivation cycle in Ge is found to take place while the maximum active B concentration exceeds its solubility limit. © 2010 American Institute of Physics.

A performance evaluation of volumetric 3D interest point detectors

This paper presents the first performance evaluation of interest points on scalar volumetric data. Such data encodes 3D shape, a fundamental property of objects. The use of another such property, texture (i.e. 2D surface colouration), or appearance, for object detection, recognition and registration has been well studied; 3D shape less so. However, the increasing prevalence of 3D shape acquisition techniques and the diminishing returns to be had from appearance alone have seen a surge in 3D shape-based methods. In this work, we investigate the performance of several state of the art interest points detectors in volumetric data, in terms of repeatability, number and nature of interest points. Such methods form the first step in many shape-based applications. Our detailed comparison, with both quantitative and qualitative measures on synthetic and real 3D data, both point-based and volumetric, aids readers in selecting a method suitable for their application. © 2012 Springer Science+Business Media, LLC.

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Atomic force microscopy (AFM) and scanning electron microscopy (SEM) with cathodoluminescence (CL) were performed on exactly the same defects in a blue-emitting InGaN/GaN multiple quantum well (QW) sample enabling the direct correlation of the morphology of an individual defect with its emission properties. The defects in question are observed in AFM and SEM as a trench partially or fully enclosing a region of the QW having altered emission properties. Their sub-surface structure has previously been shown to consist of a basal plane stacking fault (BSF) in the plane of the QW stack, and a stacking mismatch boundary (SMB) which opens up into a trench at the sample surface. In CL, the material enclosed by the trench may emit more or less intensely than the surrounding material, but always exhibits a redshift relative to the surrounding material. A strong correlation exists between the width of the trench and both the redshift and the intensity ratio, with the widest trenches surrounding regions which exhibit the brightest and most redshifted emission. Based on studies of the evolution of the trench width with the number of QWs from four additional MQW samples, we conclude that in order for a trench defect to emit intense, strongly redshifted light, the BSF must be formed in the early stages of the growth of the QW stack. The data suggest that the SMB may act as a non-radiative recombination center. © 2013 American Institute of Physics.

Theory of defects in amorphous semiconductors

We review the electronic structure of defects in aSi:H, aGaAs and aSi3N4, emphasising in aSi:H the doping mechanism, the evidence that its dangling bond defect has a small electron-lattice coupling and a positive correlation energy, and possible atomic mechanisms for the Staebler-Wronski effect. © 1985.