Switching Transients in Single-Phase Induction Motors

The subject of transients in polyphase induction motors and synchronous machines has been studied in very great detail by several investigators, but no published literature exists dealing exclusively with the analysis of the problem of transients in single-phase induction motors. This particular problem has been studied in this paper by applying the Laplace transform. The results of actual computation of the currents and developed electrical torque are compared with the data obtained by setting up the integro-differential equations of the machine on an electronic differential analyzer. It is shown that if the motor is switched on to the supply when the potential passes through its zero value, there is a pulsating fundamental frequency torque superimposed on the average steady-state unidirectional torque. If, on the other hand, the switch is closed when the applied potential passes through its maximum value, the developed electrical torque settles down to its final steady-state value during the first cycle of the supply voltage.

Editorial optical computing circuits, devices and systems

Information forms the basis of modern technology. To meet the ever-increasing demand for information, means have to be devised for a more efficient and better-equipped technology to intelligibly process data. Advances in photonics have made their impact on each of the four key applications in information processing, i.e., acquisition, transmission, storage and processing of information. The inherent advantages of ultrahigh bandwidth, high speed and low-loss transmission has already established fiber-optics as the backbone of communication technology. However, the optics to electronics inter-conversion at the transmitter and receiver ends severely limits both the speed and bit rate of lightwave communication systems. As the trend towards still faster and higher capacity systems continues, it has become increasingly necessary to perform more and more signal-processing operations in the optical domain itself, i.e., with all-optical components and devices that possess a high bandwidth and can perform parallel processing functions to eliminate the electronic bottleneck.

Influence of Switching Conditions on the VETO Magnitudes in a GIS

Estimation of very fast transient overvoltage (VFTO) has been carried out using EMTP for various switching conditions in a 420 kV gas-insulated substation (GIS). The variation of the VFTO peak along the GIS bus nodes for disconnector and circuit breaker switching operations, as well as the variation of VFTO peak with different magnitudes of trapped charges, have been studied. The results indicate a distinct pattern of variation of VFTO peak along the nodes of the GIS bus in the case of disconnector switch operation as compared to that of circuit-breaker operation. It has also been noticed that the variation of VFTO peak levels are not in direct proportion to the trapped charge present on the HV bus.

Structural, electrical, and optical properties of as-grown and heat treated ultra-thin SnS films

The composition, structural, electrical, and optical properties of as-grown and heat treated tin-mono-sulfide (SnS) ultra-thin films have been studied. The ultra-thin SnS films were prepared on glass substrates by thermal resistive evaporation technique. All the SnS films contained nanocrystallites and exhibited p-type conductivity with a low Hall-mobility, <50 cm(2)/Vs. All these films are highly tin rich in nature and exhibited orthorhombic crystal structure. As compared to other films, the SnS films annealed at 300 degrees C showed a low electrical resistivity of similar to 36 Omega cm with an optical band gap of similar to 1.98 eV. The observed electrical and optical properties of all the films are discussed based on their composition and structural parameters. These nanocrystalline ultra-thin SnS films could be expected as a buffer layer for the development of tandem solar cell devices due to their low-resistivity and high absorbability with an optimum band gap. (C) 2011 Elsevier B.V. All rights reserved.

Effect of indium doping on the electrical switching behaviour of Ge–Te glasses

Bulk Ge15Te85−x In x (1 ≤ x ≤ 11) series of glasses have been found to exhibit a threshold switching behaviour for an input current of 2 mA. An initial decrease is seen in the switching voltages (V T) with the addition of indium, which is due to the higher metallicity of indium. An increase is seen in V T above 3 at.% of indium, which proceeds until 8 at.%, with a change in slope (lower to higher) seen around 7 at.%. Beyond x = 8, a reversal in trend is exhibited in the variation of V T, with a well-defined minimum around x = 9 at.%. Based on the composition dependence of V T, it is proposed that Ge15Te85−x In x glasses exhibit an extended rigidity percolation threshold. The composition, x = 3, at which the V T starts to increase and the composition, x = 7, at which a slope change is exhibited correspond to the onset and completion, respectively, of the extended stiffness transition. Thermal studies and photoconductivity measurements also support the idea of an extended rigidity percolation in Ge15Te85−x In x glasses. In addition, the minimum seen in V T at x = 9 is associated with the chemical threshold (CT) of this glassy system.

A Review of Photo-Induced Inter-Diffusion in Nano-Layered Chalcogenide Films

Abstract | A growing interest in the research of chalcogenide glasses can be currently witnessed, which to a large extent is caused by newly opened fields of applications for these materials. Applications in the field of micro- and opto-electronics, xerography and lithography, acousto-optic and memory switching devices and detectors for medical imaging seem to be most remarkable. Accordingly, photo induced phenomena in chalcogenide glasses are attracting much interest. These phenomena can be found both in uniform thin films as well as multilayered films. Among amorphous multilayers, chalcogenide multilayers are attractive because of the potential it has for tailoring the optical properties. I will be presenting some basic idea of photoinduced effects followed by the diffusion mechanisms of Se, Sb and Bi in to As2S3 films.

Electrical Switching and Other Properties of Chalcogenide Glasses

Abstract | Electrical switching which has applications in areas such as information storage, power control, etc is a scientifically interesting and technologically important phenomenon exhibited by glassy chalcogenide semiconductors. The phase change memories based on electrical switching appear to be the most promising next generation non-volatile memories, due to many attributes which include high endurance in write/read operations, shorter write/read time, high scalability, multi-bit capability, lower cost and a compatibility with complementary metal oxide semiconductor technology.Studies on the electrical switching behavior of chalcogenide glasses help us in identifying newer glasses which could be used for phase change memory applications. In particular, studies on the composition dependence of electrical switching parameters and investigations on the correlation between switching behavior with other material properties are necessary for the selection of proper compositions which make good memory materials.In this review, an attempt has been made to summarize the dependence of the electrical switching behavior of chalcogenide glasses with other material properties such as network topological effects, glass transition & crystallization temperature, activation energy for crystallization, thermal diffusivity, electrical resistivity and others.

The electrical switching and thermal behavior of bulk Ge(15)Te(85-x)Sn(x) and Ge(17)Te(83-x)Sn(x) glasses

Bulk Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses, are found to exhibit memory type electrical switching. The switching voltages (V(t)) and thermal stability of Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses are found to decrease with Sn content. The composition dependence of v, has been understood on the basis of the decrease in the OFF state resistance and thermal stability of these glasses with tin addition. X-ray diffraction studies reveal that no elemental Sn or Sn compounds with Te or Ge are present in thermally crystallized Ge-Te-Sn samples. This indicates that Sn atoms do not interact with the host matrix and form a phase separated network of its own, which remains in the parent glass matrix as an inclusion. Consequently, there is no enhancement of network connectivity and rigidity. The thickness dependence of switching voltages of Ge(15)Te(85 - x)Sn(x) and Ge(17)Te(83 - x)Sn(x) glasses is found to be linear, in agreement with the memory switching behavior shown by these glasses. (C) 2011 Elsevier B.V. All rights reserved.

Repulsive fermions in optical lattices: Phase separation versus coexistence of antiferromagnetism and d-wave superfluidity

We investigate a system of fermions on a two-dimensional optical square lattice in the strongly repulsive coupling regime. In this case, the interactions can be controlled by laser intensity as well as by Feshbach resonance. We compare the energetics of states with resonating valence bond d-wave superfluidity, antiferromagnetic long-range order, and a homogeneous state with coexistence of superfluidity and antiferromagnetism. Using a variational formalism, we show that the energy density of a hole e(hole)(x) has a minimum at doping x = x(c) that signals phase separation between the antiferromagnetic and d-wave paired superfluid phases. The energy of the phase-separated ground state is, however, found to be very close to that of a homogeneous state with coexisting antiferromagnetic and superfluid orders. We explore the dependence of the energy on the interaction strength and on the three-site hopping terms and compare with the nearest-neighbor hopping t-J model.

A density matrix renormalization group method study of optical properties of porphines and metalloporphines

The symmetrized density matrix renormalization group method is used to study linear and nonlinear optical properties of free base porphine and metalloporphine. Long-range interacting model, namely, Pariser-Parr-Pople model is employed to capture the quantum many-body effect in these systems. The nonlinear optical coefficients are computed within the correction vector method. The computed singlet and triplet low-lying excited state energies and their charge densities are in excellent agreement with experimental as well as many other theoretical results. The rearrangement of the charge density at carbon and nitrogen sites, on excitation, is discussed. From our bond order calculation, we conclude that porphine is well described by the 18-annulenic structure in the ground state and the molecule expands upon excitation. We have modeled the regular metalloporphine by taking an effective electric field due to the metal ion and computed the excitation spectrum. Metalloporphines have D(4h) symmetry and hence have more degenerate excited states. The ground state of metalloporphines shows 20-annulenic structure, as the charge on the metal ion increases. The linear polarizability seems to increase with the charge initially and then saturates. The same trend is observed in third order polarizability coefficients. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3671946]

Radio-Optical Imaging of ATLBS Survey

We present the radio-optical imaging of ATLBS, a sensitive radio survey (Subrahmanyan et al. 2010). The primary aim of the ATLBS survey is to image low-power radio sources which form the bulk of the radio source population to moderately high red-shifts (z similar to 1.0). The accompanying multiband optical and near infra-red observations provide information about the hosts and environments of the radio sources. We give here details of the imaging of the radio data and optical data for the ATLBS survey.

Synthesis and nonlinear optical properties of Lead Telluride nanorods

Lead Telluride (PbTe) nanorods have been uniformly grown on silicon substrates, using the thermal evaporation technique under high vacuum conditions. The structural and morphological studies are done using X-ray diffraction and scanning electron microscopy. Optical nonlinearity studies using the open aperture z-scan employing 5 ns and 100 fs laser pulses reveal a three-photon type absorption. For nanosecond excitation the nonlinear absorption coefficients (gamma) are in the order of 10(-22) m(3) W-2 and for femtosecond excitation it is in the order of 10(-29) m(3) W-2. The role of free carriers and excitons in causing the nonlinearity in both excitation time domains is discussed. Results indicate that PbTe nanorods are good optical limiters with potential device applications. (C) 2011 Elsevier B.V. All rights reserved.

Transport, optical and magnetotransport properties of hetero-epitaxial InAsxSb1−x/GaAs(x0.06) and bulk View the MathML source crystals: experiment and theoretical analysis

We briefly review the growth and structural properties of View the MathML source bulk single crystals and View the MathML source epitaxial films grown on semi-insulating GaAs substrates. Temperature-dependent transport measurements on these samples are then correlated with the information obtained from structural (XRD, TEM, SEM) and optical (FTIR absorption) investigations. The temperature dependence of mobility and the Hall coefficient are theoretically modelled by exactly solving the linearized Boltzmann transport equation by inversion of the collision matrix and the relative role of various scattering mechanisms in limiting the low temperature and View the MathML source mobility is estimated. Finally, the first observation of Shubnikov oscillations in InAsSb is discussed.

Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost sol-gel method

ZnO:Al thin films were prepared on glass and silicon substrates by the sol-gel spin coating method. The x-ray diffraction (XRD) results showed that a polycrystalline phase with a hexagonal structure appeared after annealing at 400 degrees C for 1 h. The transmittance increased from 91 to about 93% from pure ZnO films to ZnO film doped with 1 wt% Al and then decreased for 2 wt% Al. The optical band gap energy increased as the doping concentration was increased from 0.5 wt% to 1 wt% Al. The metal oxide semiconductor (MOS) capacitors were fabricated using ZnO films deposited on silicon (100) substrates and electrical properties such as current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics were studied. The electrical resistivity decreased and the leakage current increased with an increase of annealing temperature. The dielectric constant was found to be 3.12 measured at 1 MHz. The dissipation value for the film annealed at 300 degrees C was found to be 3.1 at 5 V. (C) 2011 Elsevier Ltd. All rights reserved.