Voltage responsivity of pyroelectric sensor

Composites polymer-ceramic using castor oil-based polyurethane (PU) as non-ferroelectric matrix and Lead Zirconate Titanate (PZT) as ceramic powder have been prepared at thin films form by spin coating. The samples are poled by appropriated electric field to show piezo and pyroelectric activity. The pyroelectric coefficient p(T) at 343 K is obtained to be equal 5.8 X 10(-5) C m(-2) K-1 for a composite with 32 vol.% of ceramic. The figure of merit of this composite is six times higher than of PZT ceramic. The voltage responsivity of the pyroelectric is reduced when the thickness of the sample increases. It was used modulated white light as radiation source to excite the sensor film. The electric signal of the sensor decreases with the light modulation frequency by 1/f. (C) 1999 Elsevier B.V. S.A. All rights reserved.

Linear readout of dynamic phase modulation index in an optical voltage sensor using the new J(1) ... J(3) spectral method

The J(1)...J(3) is a recent optical method for linear readout of dynamic phase modulation index in homodyne interferometers. In this work, the J(1)... J(3) method is applied to measure voltage in an optical voltage sensor. Based on the classical J(1)...J(4) method, the J(1)... J(3) technique shows to be more stable to phase drift and simpler for implementation than the original one. The sensor dynamic range is enhanced. The agreement between theoretical and experimental results, based on 1/f noise, is demonstrated.

A CMOS/SOI single-input PWM discriminator for low-voltage body-implanted applications

A CMOS/SOI circuit to decode Pulse-Width Modulation (PWM) signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique is based on a novel double-integration concept and does not require low-pass filtering. Non-overlapping control phases are internally derived from the incoming pulses and a fast-settling comparator ensures good discrimination accuracy in the megahertz range. The circuit was integrated on a 2 mum single-metal thin-film CMOS/SOI fabrication process and has an effective area of 2 mm(2). Measured resolution of encoding parameter a is better than 10% at 6 MHz and V-DD = 3.3 V. Idle-mode consumption is 340 LW. Pulses of frequencies up to 15 MHz and alpha = 10% can be discriminated for 2.3 V less than or equal to V-DD less than or equal to 3.3 V. Such an excellent immunity to V-DD deviations meets a design specification with respect to inherent coupling losses on transmitting data and power by means of a transcutaneous link.

Incorporating voltage/reactive representation to short-term generation scheduling models

This paper proposes a methodology to incorporate voltage/reactive representation to Short Term Generation Scheduling (STGS) models, which is based on active/reactive decoupling characteristics of power systems. In such approach STGS is decoupled in both Active (AGS) and Reactive (RGS) Generation Scheduling models. AGS model establishes an initial active generation scheduling through a traditional dispatch model. The scheduling proposed by AGS model is evaluated from the voltage/reactive points of view, through the proposed RGS model. RGS is formulated as a sequence of T nonlinear OPF problems, solved separately but taking into account load tracking between consecutive time intervals. This approach considerably reduces computational effort to perform the reactive analysis of the RGS problem as a whole. When necessary, RGS model is capable to propose active generation redispatches, such that critical reactive problems (in which all reactive variables have been insufficient to control the reactive problems) can be overcome. The formulation and solution methodology proposed are evaluated in the IEEE30 system in two case studies. These studies show that the methodology is robust enough to incorporate reactive aspects to STGS problem.

Low voltage electroluminescence of terbium- and thulium-doped zinc oxide films

Strong interest in developing technology for visual information. stimulates research for thin film electroluminescent devices. Here, for the first time, we report that thulium- and terbium-doped zinc-oxide films are suitable for electroluminescence applications. Two different devices were assembled as lTO/LiF/ZnO:RE/LiF/Al or ITO/SiO2/ZnO:RE/SiO2/Al, where ZnO:RE is a film of zinc oxide containing 10 at% of Tb3+ or Tm3+. Electroluminescence spectra show that besides a broad emission band with maximum around 650 nm assigned to ZnO, also emission lines from Tb3+ at 484 nm (D-5(4) -> F-7(6)), 543 nm (D-5(4) -> F-7(6)), and 589 nm (D-5(4) -> F-7(4)), or from Tm3+ at 478 nm ((1)G(4) -> H-3(6)), and 511 mn (D-1(2) -> H-3(5)) were detected. Intensity of emission as function of applied voltage and current-voltage characteristic are shown and discussed. (c) 2005 Elsevier B.V. All rights reserved.

Mnltiloop Controller and Reference Generator for a Dynamic Voltage Restorer Implementation

This paper deals with the design and analysis of a Dynamic Voltage Restorer output voltage control. Such control is based on a multiloop strategy, with an inner current PID regulator and an outer P+Resonant voltage controller. The inner regulator is applied on the output inductor current. It will be also demonstrated how the load current behavior may influence in the DVR output voltage, which. justifies the need for the resonant controller. Additionally, it will be discussed the application of a modified algorithm for the identification of the DVR voltage references, which is based on a previously presented positive sequence detector. Since the studied three-phase DVR is assumed to be based on three identical H-bridge converters, all the analysis and design procedures were realized by means of single-phase equivalent circuits. The discussions and conclusions are supported by theoretical calculations, nonlinear simulations and some experimental results.

A linearly tunable low-voltage CMOS transconductor with improved common-mode stability and its application to (gm)-C filters

A linearly tunable low-voltage CMOS transconductor featuring a new adaptative-bias mechanism that considerably improves the stability of the processed-signal common,mode voltage over the tuning range, critical for very-low voltage applications, is introduced. It embeds a feedback loop that holds input devices on triode region while boosting the output resistance. Analysis of the integrator frequency response gives an insight into the location of secondary poles and zeros as function of design parameters. A third-order low-pass Cauer filter employing the proposed transconductor was designed and integrated on a 0.8-mum n-well CMOS standard process. For a 1.8-V supply, filter characterization revealed f(p) = 0.93 MHz, f(s) = 1.82 MHz, A(min) = 44.08, dB, and A(max) = 0.64 dB at nominal tuning. Mined by a de voltage V-TUNE, the filter bandwidth was linearly adjusted at a rate of 11.48 kHz/mV over nearly one frequency decade. A maximum 13-mV deviation on the common-mode voltage at the filter output was measured over the interval 25 mV less than or equal to V-TUNE less than or equal to 200 mV. For V-out = 300 mV(pp) and V-TUNE = 100 mV, THD was -55.4 dB. Noise spectral density was 0.84 muV/Hz(1/2) @1 kHz and S/N = 41 dB @ V-out = 300 mV(pp) and 1-MHz bandwidth. Idle power consumption was 1.73 mW @V-TUNE = 100 mV. A tradeoff between dynamic range, bandwidth, power consumption, and chip area has then been achieved.

New approach to four-phase transmission systems: analysis of the transient response and the possible voltage surges

This study describes a technical analysis of a four-phase line as a transmission system alternative. An analysis in the frequency and the time domains is performed to evaluate the electrical characteristics and the transient response of a generic four-phase system compared with those of a conventional three-phase transmission system. The technical features of this non-conventional system are discussed and reviewed based on the current literature. Thus, a new analysis of the four-phase system is presented that emphasises several technical characteristics that have not been discussed in previous studies.

The effect of TiO(2) on the microstructural and electrical properties of low voltage varistor based on (Sn,Ti)O(2) ceramics

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

SnO2, ZnO and related polycrystalline compound semiconductors: An overview and review on the voltage-dependent resistance (non-ohmic) feature

The present review describes mainly the history of SnO2-based voltage-dependent resistors, discusses the main characteristics of these polycrystalline semiconductor systems and includes a direct comparison with traditional ZnO-based voltage-dependent resistor systems to establish the differences and similarities, giving details of the basic physical principles involved with the non-ohmic properties in both polycrystalline systems. As an overview, the text also undertakes the main difficulties involved in processing SnO2- and ZnO-based non-ohmic systems, with an evaluation of the contribution of the dopants to the electronic properties and to the final microstructure and consequently to the system's non-ohmic behavior. However, since there are at least two review texts regarding ZnO-based systems [Levinson, L. M., and Philipp, H. R. Ceramic Bulletin 1985;64:639; Clarke, D. R. Journal of American Ceramic Society 1999;82:485], the main focus of the present text is dedicated to the SnO2-based varistor systems, although the basic physical principles described in the text are universally useful in the context of dense polycrystalline devices. However, the readers must be careful of how the microstructure heterogeneity and grain-boundary chemistry are capable to interfere in the global electrical response for particular systems. New perspectives for applications, commercialization and degradation studies involving SnO2-based polycrystalline non-ohmic systems are also outlined, including recent technological developments. Finally, at the end of this review a brief section is particularly dedicated to the presentation and discussions about others emerging non-ohmic polycrystalline ceramic devices (particularly based on perovskite ceramics) which must be deeply studied in the years to come, specially because some of these systems present combined high dielectric and non-ohmic properties. From both scientific and technological point of view these perovskite systems are quite interesting. (c) 2007 Elsevier Ltd. All rights reserved.

Stepped light-induced transient measurements of photocurrent and voltage in dye-sensitized solar cells based on ZnO and ZnO:Ga

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Modelling of the influence of the layer pollution thickness in high voltage polluted insulators

An experimental model and a mathematical model with the introduction of a ramp in the channel of Obenaus model are presented. The aim is to present a better reproduction of the real layer pollution deposited on the HV insulators. This better reproduction is obtained from two types of thickness variation: the introduction of a ramp (soft variation) and the introduction of a step (sudden variation). The computational simulations and the experimental data suggest that the introduction of the ramp is the better reproduction of the layer pollution. The ramp approximates to the real layer pollution more than the step.

New 12kW three-phase 18-pulse high power factor AC-DC converter with regulated output voltage for rectifier units

This work presents a new high power factor three-phase rectifier based on a Y-connected differential autotransformer with reduced kVA and 18-pulse input current followed by three DC-DC boost converters. The topology provides a regulated output voltage and natural three-phase input power factor correction. The lowest input current harmonic components are the 17th and the 19th. Three boost converters, with constant input currents and regulated parallel connected output voltages are used to process 4kW each one. Analytical results from Fourier analyses of winding currents and the vector diagram of winding voltages are presented. Simulation results to verify the proposed concept and experimental results are shown in the paper.