Self-consistent microscopic treatment of the effects of self-motion of the probe on ionic and dipolar solvation dynamics

A simple but self-consistent microscopic theory for the time dependent solvation energy of both ions and dipoles is presented which includes, for the first time, the details of the self-motion of the probe on its own solvation dynamics. The theory leads to several interesting predictions. The most important of them is that, for dipolar solvation, both the rotational and the translational motions of the dipolar solute probe can significantly accelerate the rate of solvation. In addition, the rotational self-motion of the solute can also give rise to an additional mechanism of nonexponentiality in solvation time correlation functions in otherwise slow liquids. A comparison between the present theoretical predictions and the recent experimental studies of Maroncelli et al. on solvation dynamics of aniline in l-propanol seems to indicate that the said experiments have missed the initial solvent response up to about 45 ps. After mapping the experimental results on the redefined time scale, the theoretical results can explain the experimental results for solvation of aniline in 1-propanol very well. For ionic solvation, the translational motion is significant for light solutes only. For example, for Li+ in water, translational motion speeds up the solvation by about 20%. The present theory demonstrates that in dipolar solvation the partial quenching of the self-motion due to the presence of specific solute-solvent interactions (such as H-bonding) may lead to a much slower solvation than that when the self-motion is present. This point has been discussed. In addition, we present the theoretical results for solvation of aniline in propylene carbonate, Here, the solvation is predicted to be complete within 15-20 ps.

Treatment of electroplating effluent through emulsion-free liquid embrane

Separation of dissolved heavy metals such-as Cr(VI) and Cu(II) from electroplating effluents using a new technique of emulsion-free liquid membrane (EFLM) has been studied. Experimental results show that nearly 95% extraction is obtained resulting in stripping phase enrichment up to 50 times relative to feed. It is also found that emulsion-free liquid membranes are highly efficient and superior to other types of liquid membranes.

Regarding the effect of aging heat treatment on the failure behaviour of a SiC reinforced Al based metal matrix composite

In the present study, 6061 Al metallic matrix was reinforced by 12.2 wt% df SiC particulates using liquid metallurgy route. The composite material thus obtained was extruded and characterized in the as-solutionized and peak aged conditions in order to delineate the effect of aging associated precipitation of secondary phases on the tensile fracture behavior of the composite samples. The results' of microstructural characterization studies carried out using scanning electron microscope revealed the increased presence of precipitated secondary phases in the metallic matrix and a more pronounced interfacial segregation of alloying elements in case of peak aged samples when compared to the as-solutionized samples. The results of the fractographic studies conducted on the as-solutionized samples revealed that the failure was dominated by the SiC particulates cracking while for the peak aged samples the fracture surface revealed a comparatively more pronounced SiC/6061 Al debonding and reduced SiC particulates cracking. This change in the failure behavior was rationalized in terms of embrittlement of the interfacial region brought about by the aging heat treatment and is correlated, in addition, with the mechanical properties of the composite samples in as-solutionized and peak aged conditions.

Constant pressure laminar, transitional and turbulent flows - An approximate unified treatment

A nondimensional number that is constant in two-dimensional, incompressible and constant pressure laminar and fully turbulent boundary, layer flows has been proposed. An extension of this to constant pressure transitional flow is discussed.

Phase transformation and semiconductor-metal transition in thin films of VO2 deposited by low-pressure metalorganic chemical vapor deposition

Thin films of the semiconducting, monoclinic vanadium dioxide, VO2(M) have been prepared on ordinary glass by two methods: directly by low-pressure metalorganic chemical vapor deposition (MOCVD), and by argon-annealing films of the VO2(B) phase deposited by MOCVD. The composition and microstructure of the films have been examined by x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Films made predominantly of either the B or the M phase, as deposited, can only be obtained over a narrow range of deposition temperatures. At the lower end of this temperature range, the as-deposited films are strongly oriented, although the substrate is glass. This can be understood from the drive to minimize surface energy. Films of the B phase have a platelet morphology, which leads to an unusual microstructure at the lower-deposition temperatures. Those grown at similar to370 degreesC convert to the metallic, rutile (R) phase when annealed at 550 degreesC, whereas those deposited at 420 degreesC transform to the R phase only at 580 degreesC. (When cooled to room temperature, the annealed films convert reversibly from the R phase to the M phase.) Electron microscopy shows that annealing leads to disintegration of the single crystalline VO2(B) platelets into small crystallites of VO2(R), although the platelet morphology is retained. When the annealing temperature is relatively low, these crystallites are nanometer sized. At a higher-annealing temperature, the transformation leads to well-connected and similarly oriented large grains of VO2(R), enveloped in the original platelet. The semiconductor-metal transition near 68 degreesC leads to a large jump in resistivity in all the VO2(M) films, nearly as large as in epitaxial films on single-crystal substrates. When the annealed films contain well-connected large grains, the transition is very sharp. Even when preferred orientation is present, the transition is not as sharp in as-deposited VO2(M), because the crystallites are not densely packed as in annealed VO2(B). However, the high degree of orientation in these films leads to a narrow temperature hysteresis. (C) 2002 American Institute of Physics.

Cobalt oxide thin films prepared by metalorganic chemical vapor deposition from cobalt acetylacetonate

Thin films of cobalt oxide have been deposited on various substrates, such as glass, Si(100), SrTiO3(100), and LaAlO3(100), by low pressure metalorganic chemical vapor deposition (MOCVD) using cobalt(IL), acetylacetonate as the precursor. Films obtained in the temperature range 400-600 degreesC were uniform and highly crystalline having Co3O4 phase as revealed by x-ray diffraction. Under similar conditions of growth, highly oriented thin films of cobalt oxide grow on SrTiO3(100) and LaAlO3(100). The microstructure and the surface morphology of cobalt oxide films on glass, Si(100) and single crystalline substrates, SrTiO3(100) and LaAlO3(100) were studied by scanning electron microscopy. Optical properties of the films were studied by uv-visible-near IR spectrophotometry.

A cascaded discharge plasma-adsorbent technique for engine exhaust treatment

A cascaded system of electrical discharges (non-thermal plasma) and adsorption process was investigated for the removal of oxides of Nitrogen (NOx) and total hydrocarbons (THC) from an actual diesel engine exhaust. The non-thermal plasma and adsorption processes were separately studied first and then the cascaded process was studied. In this study, different types of adsorbents were used. The NOx removal efficiency was higher with plasma-associated adsorption (cascaded) process compared to the individual processes and the removal efficiency was found almost invariant in time. When associated by plasma, among the adsorbents studied, activated charcoal and MS-13X were more effective for NOx and THC removal respectively. The experiments were conducted at no load and at 50% load conditions. The plasma reactor was kept at room temperature throughout the experiment, while the temperature of the adsorbent reactor was varied. A relative comparison of adsorbents was discussed at the end.

Epitaxial Growth of Co3O4 Films by Low Temperature, Low Pressure Chemical Vapor Deposition

The growth of strongly oriented or epitaxial thin films of metal oxides generally requires relatively high growth temperatures or infusion of energy to the growth surface through means such as ion bombardment. We have grown high quality epitaxial thin films of Co3O4 on different substrates at a temperature as low as 450°C by low-pressure metal-organic chemical vapor deposition (MOCVD) using cobalt(II) acetylacetonate as the precursor. With oxygen as the reactant gas, polycrystalline Co3O4 films are formed on glass and Si(100) in the temperature range 350-550°C. Under similar conditions of growth, highly oriented films of Co3O4 are formed on SrTiO3(100) and LaAlO3(100). The film on LaAlO3(100) grown at 450°C show a rocking curve FWHM of 1.61°, which reduces to 1.32° when it is annealed in oxygen at 725°C. The film on SrTiO3(100) has a FWHM of 0.330 (as deposited) and 0.29° (after annealing at 725°C). The ø-scan analysis shows cube-on-cube epitaxy on both these substrates. The quality of epitaxy on SrTiO3(100) is comparable to the best of the pervoskite-based oxide thin films grown at significantly higher temperatures.

Electron Cyclotron Resonance in Strained Si and Si0.94Ge0.06 Channels on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition

We report the far-infrared measurements of the electron cyclotron resonance absorption in n-type Si/Si0. 62Ge0.38 and Si0.94Ge0.06 /Si0. 62Ge0.38 modulation- doped heterostructures grown by rapid thermal chemical vapor deposition. The strained Si and Si0.94Ge0.06 channels were grown on relaxed Si0.62Ge0.38 buffer layers, which consist of 0.6 μm uniform Si0.62Ge0.38 layers and 0.5 μm compositionally graded relaxed SiGe layers from 0% Ge to 38 % Ge. The buffer layers were annealed at 800 °C for 1 hr to obtain complete relaxation. The samples had 100 Å spacers and 300 Å 2×1019 cm-3 n-type supply layers on the tops of the 75 Å channels. The far-infrared measurements of electron cyclotron resonance were performed at 4K with the magnetic field of 4 – 8 Tesla. The effective masses determined from the slope of center frequency of absorption peak vs applied magnetic field plot are 0.20 mo and 0.19 mo for the two dimensional electron gases in the Si and Si0.94Ge0.06 channels, respectively. The Si effective mass is very close to that of two dimensional electron gas in Si MOSFET (0.198mo). The electron effective mass of Si0.94Ge0.06 is reported for the first time and about 5 % lower than that of pure Si.

Growth of nanowires of beta-NaxV2O5 by metalorganic chemical vapor deposition

Films comprised of nanowires of beta-NaxV2O5 measuring 20-200 nm in diameter and 10-30 mum in length have been prepared on glass substrates by metalorganic chemical vapor deposition using the beta-diketonate complex, vanadyl acetyl acetonate, as precursor, but without the use of either templates or catalysts. Films consisting of nanowires of monophasic beta-NaxV2O5 with a preferred orientation along (h0l) are formed only at 550 degreesC, whereas those deposited at 540 degreesC comprise a mixture of nanowires (beta-NaxV2O5) and platelets (V2O5). The films deposited at lower temperatures are less crystalline and comprise a mixture of vanadium oxide phases. From the observations that nanowires are formed only in the narrow temperature range of 540-550 degreesC, and from the critical dependence of the formation of nanowires on the balance between the CVD growth rate and the evaporation rate of the film, it is inferred that the formation of nanowires of beta-NaxV2O5 is due to chemical vapor transport.

Performance evaluation of nonthermal plasma reactors for NO oxidation in diesel engine exhaust gas treatment

The discharge plasma-chemical hybrid process for NOinfinity removal from the flue gas emissions is an extremely effective and economical approach in comparison with the conventional selective catalytic reduction system. In this paper we bring out a relative comparison of several discharge plasma reactors from the point of NO removal efficiency. The reactors were either energized by ac or by repetitive pulses. Ferroelectric pellets were used to study the effect of pellet assisted discharges on gas cleaning. Diesel engine exhaust, at different loads; is used to approximately simulate the flue gas composition. Investigations were carried out at room temperature with respect to the variation of reaction products against the discharge power. Main emphasis is laid on the oxidation of NO to NO2, without reducing NOx concentration (i.e., minimum reaction byproducts), with least power consumption. The produced NO2 will be totally converted to N-2 and Na-2 SO4 using Na-2 SO3. The ac packed-bed reactor and pelletless pulsed corona reactor showed better performance, with minimum reaction products for a given power, when the NO concentration was low (similar to 100 ppm). When the engine load exceeds 50% (NO > 300 ppm) there was not much decrease in NO reduction and more or less all the reactors performed equally. The total operating cost of the plasma-chemical hybrid system becomes $4010/ton of NO, which is 1/3-1/5 of the conventional selective catalytic process.