Modeling the carbon nanofiber addressed liquid crystal microlens array from experimentally observed optical phenomena

This paper presents a novel method of using experimentally observed optical phenomena to reverse-engineer a model of the carbon nanofiber-addressed liquid crystal microlens array (C-MLA) using Zemax. It presents the first images of the optical profile for the C-MLA along the optic axis. The first working optical models of the C-MLA have been developed by matching the simulation results to the experimental results. This approach bypasses the need to know the exact carbon nanofiber-liquid crystal interaction and can be easily adapted to other systems where the nature of an optical device is unknown. Results show that the C-MLA behaves like a simple lensing system at 0.060-0.276 V/μm. In this lensing mode the C-MLA is successfully modeled as a reflective convex lens array intersecting with a flat reflective plane. The C-MLA at these field strengths exhibits characteristics of mostly spherical or low order aspheric arrays, with some aspects of high power aspherics. It also exhibits properties associated with varying lens apertures and strengths, which concur with previously theorized models based on E-field patterns. This work uniquely provides evidence demonstrating an apparent "rippling" of the liquid crystal texture at low field strengths, which were successfully reproduced using rippled Gaussian-like lens profiles. © 2014 Published by Elsevier B.V.

Refining sparse principal components

In this paper, we discuss methods to refine locally optimal solutions of sparse PCA. Starting from a local solution obtained by existing algorithms, these methods take advantage of convex relaxations of the sparse PCA problem to propose a refined solution that is still locally optimal but with a higher objective value. © 2010 Springer -Verlag Berlin Heidelberg.

Surface texturing through cylinder buckling

We consider the axial buckling of a thin-walled cylinder fitted onto a mandrel core with a prescribed annular gap. The buckling pattern develops fully and uniformly to yield a surface texture of regular diamond-shaped buckles, which we propose for novel morphing structures. We describe experiments that operate well into the postbuckling regime, where a classical analysis does not apply; we show that the size of buckles depends on the cylinder radius and the gap width, but not on its thickness, and we formulate simple relationships from kinematics alone for estimating the buckle proportions during loading. © 2014 by ASME.

Twin plane re-entrant mechanism for catalytic nanowire growth.

A twin-plane based nanowire growth mechanism is established using Au catalyzed Ge nanowire growth as a model system. Video-rate lattice-resolved environmental transmission electron microscopy shows a convex, V-shaped liquid catalyst-nanowire growth interface for a ⟨112⟩ growth direction that is composed of two Ge {111} planes that meet at a twin boundary. Unlike bulk crystals, the nanowire geometry allows steady-state growth with a single twin boundary at the nanowire center. We suggest that the nucleation barrier at the twin-plane re-entrant groove is effectively reduced by the line energy, and hence the twin acts as a preferential nucleation site that dictates the lateral step flow cycle which constitutes nanowire growth.

Surface contact and design of fibrillar 'friction pads' in stick insects (Carausius morosus): mechanisms for large friction coefficients and negligible adhesion.

Many stick insects and mantophasmids possess tarsal 'heel pads' (euplantulae) covered by arrays of conical, micrometre-sized hairs (acanthae). These pads are used mainly under compression; they respond to load with increasing shear resistance, and show negligible adhesion. Reflected-light microscopy in stick insects (Carausius morosus) revealed that the contact area of 'heel pads' changes with normal load on three hierarchical levels. First, loading brought larger areas of the convex pads into contact. Second, loading increased the density of acanthae in contact. Third, higher loads changed the shape of individual hair contacts gradually from circular (tip contact) to elongated (side contact). The resulting increase in real contact area can explain the load dependence of friction, indicating a constant shear stress between acanthae and substrate. As the euplantula contact area is negligible for small loads (similar to hard materials), but increases sharply with load (resembling soft materials), these pads show high friction coefficients despite little adhesion. This property appears essential for the pads' use in locomotion. Several morphological characteristics of hairy friction pads are in apparent contrast to hairy pads used for adhesion, highlighting key adaptations for both pad types. Our results are relevant for the design of fibrillar structures with high friction coefficients but small adhesion.

Pseudobagrus brachyrhabdion, a new catfish (Teleostei : Bagridae) from the middle Yangtze River drainage, South China

Pseudobagrus brachyrhabdion sp. nov., from the Yuan Jiang and Xiang Jiang of the middle Yangtze River drainage in Hunan and Guizhou Provinces, South China, is described herein. It is distinguished from all other Pseudobagrus species with a truncate or slightly emarginated caudal fin by an unique combination of the following characters: supraoccipital plate and nuchal plate broadly interspaced and covered with skin; nasal barbels only at most reaching anterior margin of eye; maxillary barbels reaching slightly beyond posterior margin of eye; outer mandibular barbels extending to posterior margin of eye; dorsal fin with a somewhat convex distal margin, origin nearer to pectoral-fin insertion than to pelvic-fin insertion; dorsal-fin spine shorter than pectoral spine, with a somewhat serrated posterior margin; pectoral-fin spine with a smooth anterior margin; anal fin with 20-23 rays, base length 23.8-32.0% of standard length, posterior end of anal-fin base anterior to posterior end of adipose fin base; no longitudinal black band extending along flank; eyes large, diameter 16.3-23.7% of head length; and number of vertebrae 5 + 43-46.

Redescription of Myxobolus pyramidis chen, 1958 (Myxosporea : Bivalvulida)

Redescription of Myxobolus pyramidis Chen, 1958, from gill lamellae of allogynogenetic gibel carp, Carassius auratus gibelio (Bloch), is presented in this paper to complete Chen's description. The diagnostic characters of the myxosporidia are: ovoid round, greyish-white polysporous plasmodia, averaging (159 +/- 21)x(72 +/- 6.5) mu m in size; spore pyriform in front view with smooth surface and symmetrical valves, convex-shaped in sutural view with straight and thick sutural line, averaging (10.5 +/- 1.1)x(10.3 +/- 0.9)x(6.1 +/- 0.2) mu m in size; two equal pyriform polar capsules averaging (5.5 +/- 0.7)x(3.5 +/- 0.2) mu m in size with distinct intercapsular process and polar filament wounded in five to six coils. The histological effects of the pathogen were observed by light microscopy, and the parasite-host relationship was discussed.

Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Thick nonpolar (10 (1) over bar0) GaN layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (10 (1) over bar(3) over bar) GaN layers were obtained by the conventional two-step growth method using the same substrate. The in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high. resolution X-ray diffraction and polarized Raman scattering measurements. Atomic force microscopy (AFM) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (10 (1) over bar0) and (10 (1) over bar(3) over bar) GaN films. The m-plane GaN surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled KOH, whereas the oblique hillocks appeared on the semipolar epilayers. In addition, the dominant emission at 3.42eV in m-plane GaN films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers. [DOI: 10.1143/JJAP.47.3346]

Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy

A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved.

Electronic states of a hydrogenic donor impurity in semiconductor nano-structures

We propose a method for uniformly calculating the electronic states of a hydrogenic donor impurity in low-dimensional semiconductor nano-structures in the framework of effective-mass envelope-function theory, and we study the electronic structures of this systems. Compared to previous methods, our method has the following merits: (a) It can be widely applied in the calculation of the electronic states of hydrogenic donor impurities in nano-structures of various shapes; (b) It can easily be extended to study the effects of external fields and other complex cases; (c) The excited states are more easily calculated than with the variational method; (d) It is convenient to calculate the change of the electronic states with the position of a hydrogenic donor impurity in nano-structures; (e) The binding energy can be calculated explicitly. (c) 2007 Elsevier B.V. All rights reserved.

Cancer subtypes recognition and its gene expression profiles analysis based on geometrical learning

The accurate recognition of cancer subtypes is very significant in clinic. Especially, the DNA microarray gene expression technology is applied to diagnosing and recognizing cancer types. This paper proposed a method of that recognized cancer subtypes based on geometrical learning. Firstly, the cancer genes expression profiles data was pretreated and selected feature genes by conventional method; then the expression data of feature genes in the training samples was construed each convex hull in the high-dimensional space using training algorithm of geometrical learning, while the independent test set was tested by the recognition algorithm of geometrical learning. The method was applied to the human acute leukemia gene expression data. The accuracy rate reached to 100%. The experiments have proved its efficiency and feasibility.

Investigation of Mn-doped Si films prepared by magnetron cosputtering

Mn-doped Si films were prepared on Si(001) substrates by magnetron cosputtering and post-annealing process. The structural, morphological and magnetic properties of the films have been investigated. X-ray diffraction results show that the as-prepared film is amorphous. By annealing at 800 degrees C, however, the film is crystallized. There is no secondary phase found except Si in the two films. Chemical mapping shows that no segregation of the Mn atoms appears in the annealed film. Atomic force microscopy images of the films indicate that the annealed film has a granular feature that covers uniformly the film surface while there is no such kind of characteristic in the as-prepared film. The field dependence of magnetization was measured using an alternating gradient magnetometer, and it has been indicated that the annealed film shows room-temperature ferromagnetism. (c) 2006 Elsevier B.V. All rights reserved.

Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells

The influence of nonradiative recombination on the photoluminescence (PL) decay dynamics in GaInNAs/GaAs quantum wells is studied by time-resolved photoluminescence under various excitation intensities. It is found that the PL decay process strongly depends on the excitation intensity. In particular, under the moderate excitation levels the PL decay curves exhibit unusual nonexponential behavior and show a convex shape. By introducing a new parameter of the effective concentration of nonradiative recombination centers into a rate equation, the observed results are well simulated. The cw PL data further demonstrate the nonradiative recombination effect on the optical properties of GaInNAs/GaAs quantum wells. (c) 2006 American Institute of Physics.

Silicon nanowires grown on a pre-annealed Si substrate

Polycrystalline Si nanowires (poly SiNWS) were successfully synthesized by plasma-enhanced chemical vapor deposition (PECVD) at 440degreesC using silane as the Si source and Au as the catalyst. The diameters of Si nanowires range from 15 to 100nm. The growth process indicates that to fabricate SiNWS by PECVD, pre-annealing at high temperature is necessary. A few interesting nanowires with Au nanoclusters uniformly distributed in the body of the wire were also produced by this technique. (C) 2002 Elsevier Science B.V. All rights reserved.

In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD

The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.