Determining the interfacial density of states in metal-insulator-semiconductor devices based on poly(3-hexylthiophene)

Low frequency admittance measurements are used to determine the density of interface states in metal-insulator-semiconductor diodes based on the unintentionally doped, p-type semiconductor poly(3-hexylthiophene). After vacuum annealing at 90 degrees C, interface hole trapping states are shown to be distributed in energy with their density decreasing approximately linearly from similar to 20x10(10) to 5x10(10) cm(-2) eV(-1) over an energy range extending from 0.05 to 0.25 eV above the bulk Fermi level. (c) 2008 American Institute of Physics.

Observation of persistent photoconductivity in vanadyl phthalocyanine

Persistent photoconductivity (PPC) in vanadyl phthalocyanine (VOPc) organic light-emitting diodes was investigated using photoconductive time response, photocurrent-voltage characteristics and charge extraction in linearly increasing voltage (CELIV) measurements. The experiments were performed in phase 1 (amorphous) and in phase 2 (crystalline) samples obtained by the physical vapour deposition (PVD) technique over ITO/glass electrodes with an Al covering electrode. The results indicated a photoconductivity with a long decay time in phase 1 VOPc described by a stretched exponential relaxation. The device showed a rectifying behaviour and the mobility of holes was measured by CELIV, following a dispersive model. In crystalline samples the PPC effect was not observed and the dominant mechanism of transport of holes was hopping in a Gaussian density of states.

On the origin of exciton formation in dye doped Alq(3) OLEDs

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Kinetics of interface state-limited hole injection in alpha-naphthylphenylbiphenyl diamine (alpha-NPD) thin layers

Injection-limited operation is identified in thin-film, alpha-NPD-based diodes. A detailed model for the impedance of the injection process is provided which considers the kinetics of filling/releasing of interface states as the key factor behind the injection mechanism. The injection model is able to simultaneously account for the steady-state, current-voltage (J-V) characteristics and impedance response. and is based on the sequential injection of holes mediated by energetically distributed surface states at the metal-organic interface. The model takes into account the vacuum level offset caused by the interface dipole, along with the partial shift of the interface level distribution with bias voltage. This approach connects the low-frequency (similar to 1 Hz) capacitance spectra, which exhibits a transition between positive to negative values, to the change in the occupancy of interface states with voltage. Simulations based on the model allow to derive the density of interface states effectively intervening in the carrier injection (similar to 5 x 10(12) cm(-2)), which exhibit a Gaussian-like distribution. A kinetically determined hole barrier is calculated at levels located similar to 0.4 eV below the contact work function. (C) 2008 Elsevier B.V. All rights reserved.

Magnetic field effects on the conductivity of organic bipolar and unipolar devices at room temperature

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Towards coherent optical control of a single hole spin: Rabi rotation of a trion conditional on the spin state of the hole

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Neurophysiological patterns of ulnar nerve neuropathy in leprosy reactions

Background: Leprosy neuropathy, despite being primarily demyelinating, frequently leads to axonal loss. Neurophysiological examination of the nerves during Type 1 (T1R) and Type 2 reactions (T2R) may give some insight into the pathophysiological mechanisms.Methods: Neurophysiological examinations were performed in 28 ulnar nerves during a clinical trial of steroid treatment effectiveness, 19 patients with T1R and nine with T2R. The nerves were monitored during a period of 6 months; there were eight assessments per nerve, for a total of 224 assessments. Nine neurophysiological parameters were assessed at three sites of the ulnar nerve. The compound motor action potential amplitudes elicited at wrist, elbow and above, as well as the conduction velocity and temporal dispersion across the elbow, were chosen to focus on the changes occurring in the parameters at the elbow tunnel.Results and Conclusion: Neurophysiological changes indicating axonal and demyelinating processes during both T1R and T2R were detected across the elbow. Changes in demyelination, i.e. a Conduction Block, as a primary event present during T2R, occurring as an acute phenomenon, were observed regularly; in T1R Temporal Dispersion, a subacute phenomenon, was seen. During treatment remyelination occurred after both types of reactions.

Experimental investigation of smouldering in biomass

The smouldering process of wood logs was studied experimentally in a laboratory facility and in prescribed forest bums. The main goal was to check the parameters that initiate and control the stability of the smouldering process. To do so, sample temperatures at five different locations and concentrations of CO, CO2 and O-2 were measured and discussed. By varying the temperature and air supply of the flow tunnel apparatus, different rates of smoulder propagation were identified. In prescribed bums, the main characteristics of the self-sustained smouldering combustion front in logs of different sizes and species are reported. The average smouldering speed in the field is about one order of magnitude lower than that reported for different materials in laboratory experiments. (C) 2002 Elsevier B.V. Ltd. All rights reserved.

A novel voltage step-down/up ZCS-PWM Zeta converter

This paper presents an analysis of a novel pulse-width-modulated (PWM) voltage step-down/up Zeta converter, featuring zero-current-switching (ZCS) at the active switches. The applications in de to de and ac to de (rectifier) operation modes are used as examples to illustrate the performance of this new ZCS-PWM Zeta converter. Regarding to the new ZCS-PWM Zeta rectifier proposed, it should be noticed that the average-current mode control is used in order to obtain a structure with high power-factor (HPF) and low total harmonic distortion (THD) at the input current.Two active switches (main and auxiliary transistors), two diodes, two small resonant inductors and one small resonant capacitor compose the novel ZCS-PWM soft-commutation cell, used in these new ZCS-PWM Zeta converters. In this cell, the turn-on of the active switches occurs in zero-current (ZC) and their turn-off in zero-current and zero-voltage (ZCZV). For the diodes, their turn-on process occurs in zero-voltage (ZV) and their reverse-recovery effects over the active switches are negligible. These characteristics make this cell suitable for Insulated-Gate Bipolar Transistors (IGBTs) applications.The main advantages of these new Zeta converters, generated from the new soft-commutation cell proposed, are possibility of obtaining isolation (through their accumulation inductors), and high efficiency, at wide load range. In addition, for the rectifier application, a high power factor and low THD in the input current ran be obtained, in agreement with LEC 1000-3-2 standards.The principle of operation, the theoretical analysis and a design example for the new de to de Zeta converter operating in voltage step-down mode are presented. Experimental results are obtained from a test unit with 500W output power, 110V(dc) output voltage, 220V(dc) input voltage, operating at 50kHz switching frequency. The efficiency measured at rated toad is equal to 97.3%for this new Zeta converter.Finally, the new Zeta rectifier is analyzed, and experimental results from a test unit rated at 500W output power, 110V(dc) output voltage, 220V(rms) input voltage, and operating at 50kHz switching frequency, are presented. The measured efficiency is equal to 96.95%, the power-factor is equal to 0.98, and the input current THD is equal to 19.07%, for this new rectifier operating at rated load.

Novel high-power-factor ZCS-PWM preregulators

This paper introduces novel zero-current-switching (ZCS) pulsewidth-modulated (PWM) preregulators based on a new soft-commutation cell, suitable for insulated gate bipolar transistor applications. The active switches in these proposed rectifiers turn on in zero current and turn off in zero current-zero voltage. In addition, the diodes turn on in zero voltage and their reverse-recovery effects over the active switches are negligible. Moreover, based on the proposed cell, an entire family of de-to-de ZCS-PWM converters can be generated, providing conditions to obtain naturally isolated converters, for example, derived buck-boost, Sepic. and Zeta converters. The novel ac-to-dc ZCS-PWM boost and Zeta preregulators are presented in order to verify the operation of this soft-commutation cell, In order to minimize the harmonic contents of the input current, increasing the ac power factor, the average-current-mode control is used, obtaining preregulators with ac power factor near unity and high efficiency at wide load range. The principle of operation, theoretical analysis, design example, and experimental results from test units for the novel preregulators are presented. The new boost preregulator was designed to nominal values of 1.6 kW output power, 220 V(rms) input voltage, 400 V(dc) output voltage, and operating at 20 kHz. The measured efficiency and power factor of the new ZCS-PWM boost preregulator were 96.7% and 0,99, respectively, with an input current total harmonic distortion (THD) equal to 3.42% for an input voltage with THD equal to 1.61%, at rated load, the new ZCS-PWM Zeta preregulator was designed to voltage step-down operation, and the experimental results were obtained from a laboratory prototype rated at 500 W, 220 V(rm), input voltage, 110 V(dc) output voltage, and operating at 50 kHz. The measured efficiency of the new ZCS-PWM Zeta preregulator is approximately 96.9% and the input power factor is 0.98, with an input current THD equal to 19.07% while the input voltage THD is equal to 1.96%, at rated load.

A 2kW interleaved ZCS-FM boost rectifier digitally controlled by FPGA device

This paper presents a 2kW single-phase high power factor boost rectifier with four cells in interleave connection, operating in critical conduction mode, and employing a soft-switching technique, controlled by Field Programmable Gate Array (FPGA). The soft-switching technique Is based on zero-current-switching (ZCS) cells, providing ZC (zero-current) turn-on and ZCZV (zero-current-zero-voltage) turn-off for the active switches, and ZV (zero-voltage) turn-on and ZC (zero-current) turn-off for the boost diodes. The disadvantages related 'to reverse recovery effects of boost diodes operated in continuous conduction mode (additional losses, and electromagnetic interference (EMI) problems) are minimized, due to the operation in critical conduction mode. In addition, due to the Interleaving technique, the rectifer's features include the reduction in the input current ripple, the reduction in the output voltage ripple, the use of low stress devices, low volume for the EMI input filter, high input power factor (PF), and low total harmonic distortion (THD) In the input current, in compliance with the TEC61000-3-2 standards. The digital controller has been developed using a hardware description language (VHDL) and implemented using a XC2S200E-SpartanII-E/Xilinx FPGA device, performing a true critical conduction operation mode for four interleaved cells, and a closed-loop to provide the output voltage regulation, like as a pre-regulator rectifier. Experimental results are presented for a 2kW implemented prototype with four interleaved cells, 400V nominal output voltage and 220V(rms) nominal input voltage, in order to verify the feasibility and performance of the proposed digital control through the use of a FPGA device.

Vibration energy harvesting using piezoelectric transducer and non-controlled rectifiers circuits

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Scanning tunneling microscope operating as a spin diode

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Hematoporphyrin-based photodynamic therapy for cutaneous squamous cell carcinoma in cats

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Clinical evaluation and induced corneal vascularization study by native and anionic collagen membranes in rabbits corneas

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)