Patent DE10 2004 037 519 B4 “Sensor Process and Device for Determining a Physical Value“. A Proof of Concept

At present, a fraction of 0.1 - 0.2% of the patients undergoing surgery become aware during the process. The situation is referred to as anesthesia awareness and is obviously very traumatic for the person experiencing it. The reason for its occurrence is mostly an insufficient dosage of the narcotic Propofol combined with the incapability of the technology monitoring the depth of the patient’s anesthetic state to notice the patient becoming aware. A solution can be a highly sensitive and selective real time monitoring device for Propofol based on optical absorption spectroscopy. Its working principle has been postulated by Prof. Dr. habil. H. Hillmer and formulated in DE10 2004 037 519 B4, filed on Aug 30th, 2004. It consists of the exploitation of Intra Cavity Absorption effects in a two mode laser system. In this Dissertation, a two mode external cavity semiconductor laser, which has been developed previously to this work is enhanced and optimized to a functional sensor. Enhancements include the implementation of variable couplers into the system and the implementation of a collimator arrangement into which samples can be introduced. A sample holder and cells are developed and characterized with a focus on compatibility with the measurement approach. Further optimization concerns the overall performance of the system: scattering sources are reduced by re-splicing all fiber-to-fiber connections, parasitic cavities are eliminated by suppressing the Fresnel reflexes of all one fiber ends by means of optical isolators and wavelength stability of the system is improved by the implementation of thermal insulation to the Fiber Bragg Gratings (FBG). The final laser sensor is characterized in detail thermally and optically. Two separate modes are obtained at 1542.0 and 1542.5 nm, tunable in a range of 1nm each. Mode Full Width at Half Maximum (FWHM) is 0.06nm and Signal to Noise Ratio (SNR) is as high as 55 dB. Independent of tuning the two modes of the system can always be equalized in intensity, which is important as the delicacy of the intensity equilibrium is one of the main sensitivity enhancing effects formulated in DE10 2004 037 519 B4. For the proof of concept (POC) measurements the target substance Propofol is diluted in the solvents Acetone and DiChloroMethane (DCM), which have been investigated for compatibility with Propofol beforehand. Eight measurement series (two solvents, two cell lengths and two different mode spacings) are taken, which draw a uniform picture: mode intensity ratio responds linearly to an increase of Propofol in all cases. The slope of the linear response indicates the sensitivity of the system. The eight series are split up into two groups: measurements taken in long cells and measurements taken in short cells.

Model Calculations and Implementation of Filters and Hybrid Green VCSELs based on Optical Thin Film Stacks

This work introduced the novel conception of complex coupled hybrid VCSELs for the first time. Alternating organic and inorganic layers in the lasers provide periodic variation of refractive index and optical gain, which enable single mode operation and low threshold of the VCSELs. Model calculations revealed great reduction of the lasing threshold with factors over 30, in comparison with the existing micro-cavity lasers. Tunable green VCSEL has been also designed, implemented and analyzed taking advantage of the broad photoluminescence spectra of the organics. Free standing optical thin films without compressive stress are technologically implemented. Multiple membrane stacks with air gap in between have been fabricated for the implementation of complex coupled VCSEL structures. Complex coupled hybrid VCSEL is a very promising approach to fill the gaps in the green spectral range of the semiconductor lasers.

Highly Sensitive Sensor Based On Intracavity Laser Absorption Spectroscopy By Means of Relative Intensity Noise

This thesis concerns with the main aspects of medical trace molecules detection by means of intracavity laser absorption spectroscopy (ICLAS), namely with the equirements for highly sensitive, highly selective, low price, and compact size sensor. A novel two modes semiconductor laser sensor is demonstrated. Its operation principle is based on the competition between these two modes. The sensor sensitivity is improved when the sample is placed inside the two modes laser cavity, and the competition between the two modes exists. The effects of the mode competition in ICLAS are discussed theoretically and experimentally. The sensor selectivity is enhanced using external cavity diode laser (ECDL) configuration, where the tuning range only depends on the external cavity configuration. In order to considerably reduce the sensor cost, relative intensity noise (RIN) is chosen for monitoring the intensity ratio of the two modes. RIN is found to be an excellent indicator for the two modes intensity ratio variations which strongly supports the sensor methodology. On the other hand, it has been found that, wavelength tuning has no effect on the RIN spectrum which is very beneficial for the proposed detection principle. In order to use the sensor for medical applications, the absorption line of an anesthetic sample, propofol, is measured. Propofol has been dissolved in various solvents. RIN has been chosen to monitor the sensor response. From the measured spectra, the sensor sensitivity enhancement factor is found to be of the order of 10^(3) times of the conventional laser spectroscopy.

Absorptionsspektrometrie in der Kavität eines Halbleiterlasers unter Ausnutzung der Modenkonkurrenz zwischen zwei Moden

Motivation dieser Arbeit ist die Idee, ein höchst sensitives und selektives Spektroskop, welches gleichzeitig robust ist, auf Basis von Halbleiterlasern zum Einsatz in der Atemgasdiagnostik zu entwickeln. Technische Grundlage ist die Idee, die Probe innerhalb des Laserresonators zu vermessen (sogenannte intra cavity absorption spectroscopy, ICAS). Im speziellen soll durch die Verwendung des relativen Intensitätsrauschens zur Messwertbestimmung und die Verwendung von nur zwei Moden statt der sonst für ICAS verwendeten multimodigen Laser, die Empfindlichkeit erhöht, sowie die Messwerterfassung vereinfacht werden. Die Probe im Laserresonator zu Messen, hat den Vorteil, dass durch die multiple Hin­ und Rückreflektion die wirksame Pfadlänge durch die Probe vervielfacht wird. Dabei werden Verluste an den Resonatorspiegeln durch die Verstärkung der aktiven Zone des Lasers kompensiert. Außerdem wird durch die Konkurrenz der Moden um die idealerweise homogen verbreiterte Verstärkung im Laser die Empfindlichkeit noch einmal bedeutend erhöht. Schon eine geringe Absorption bei einer bestimmten Wellenlänge wird die Intensität des betroffenen Modes zugunsten der anderen Moden verringern. Die Arbeit beschäftigt sich zum einen mit der spektroskopischen Untersuchung zwei- er für die Atemgasdiagnostik relevanter Stoffe, Aceton und das in der Anästhesie häufig eingesetzte Propofol, um das Umfeld, in dem der Laser Verwendung finden soll, zu beleuchten. Diese Untersuchungen flossen in die Entwicklung des später zum Sensor auszubauenden Lasers ein. Für den Laser wurden in der Telekommunikation übliche, glasfaserbasierte, robuste Standardbauteile wie ein optischer Halbleiterverstärker (semiconductor optical amplifier, SOA), Faserkoppler und Faser­Bragg­Gitter verwendet. Die Bauteile wurden charakterisiert. Teilaspekte des Aufbaus wurden mit der Software CAMFR simuliert. Schließlich wurde der Laser als solcher aufgebaut und charakterisiert. Das Ziel der Zweimodigkeit, in einem Intervall von 2 nm durchstimmbar, konnte erreicht werden. An einem vom Heinrich­Hertz­Institut in Berlin entwickelten zweimodigen Halbleiterlasers wurden Untersuchungen der Idee zur Vereinfachung der Messwerterfassung mittels relativen Intensitätsrauschens (relative intensity noise, RIN) durchgeführt. Als Messgröße stellt das RIN die Amplituden der Intensitätsschwankungen des Lasers gegen die Frequenzen der Intensitätsschwankungen als Rauschspektrum dar. Es konnte nachgewiesen werden, dass das Rauschspektrum charakteristisch für das Oszillationsverhalten des Lasers ist.

Development of directly modulated high speed telecommunication lasers based on surface defined feedback gratings

High-speed semiconductor lasers are an integral part in the implemen- tation of high-bit-rate optical communications systems. They are com- pact, rugged, reliable, long-lived, and relatively inexpensive sources of coherent light. Due to the very low attenuation window that exists in the silica based optical fiber at 1.55 μm and the zero dispersion point at 1.3 μm, they have become the mainstay of optical fiber com- munication systems. For the fabrication of lasers with gratings such as, distributed bragg reflector or distributed feedback lasers, etching is the most critical step. Etching defines the lateral dimmensions of the structure which determines the performance of optoelectronic devices. In this thesis studies and experiments were carried out about the exist- ing etching processes for InP and a novel dry etching process was de- veloped. The newly developed process was based on Cl2/CH4/H2/Ar chemistry and resulted in very smooth surfaces and vertical side walls. With this process the grating definition was significantly improved as compared to other technological developments in the respective field. A surface defined grating definition approach is used in this thesis work which does not require any re-growth steps and makes the whole fabrication process simpler and cost effective. Moreover, this grating fabrication process is fully compatible with nano-imprint lithography and can be used for high throughput low-cost manufacturing. With usual etching techniques reported before it is not possible to etch very deep because of aspect ratio dependent etching phenomenon where with increasing etch depth the etch rate slows down resulting in non-vertical side walls and footing effects. Although with our de- veloped process quite vertical side walls were achieved but footing was still a problem. To overcome the challenges related to grating defini- tion and deep etching, a completely new three step gas chopping dry etching process was developed. This was the very first time that a time multiplexed etching process for an InP based material system was demonstrated. The developed gas chopping process showed extra ordinary results including high mask selectivity of 15, moderate etch- ing rate, very vertical side walls and a record high aspect ratio of 41. Both the developed etching processes are completely compatible with nano imprint lithography and can be used for low-cost high-throughput fabrication. A large number of broad area laser, ridge waveguide laser, distributed feedback laser, distributed bragg reflector laser and coupled cavity in- jection grating lasers were fabricated using the developed one step etch- ing process. Very extensive characterization was done to optimize all the important design and fabrication parameters. The devices devel- oped have shown excellent performance with a very high side mode suppression ratio of more than 52 dB, an output power of 17 mW per facet, high efficiency of 0.15 W/A, stable operation over temperature and injected currents and a threshold current as low as 30 mA for almost 1 mm long device. A record high modulation bandwidth of 15 GHz with electron-photon resonance and open eye diagrams for 10 Gbps data transmission were also shown.

Squeezed thermal phonons precurse nonthermal melting of silicon as a function of fluence

A femtosecond-laser pulse can induce ultrafast nonthermal melting of various materials along pathways that are inaccessible under thermodynamic conditions, but it is not known whether there is any structural modification at fluences just below the melting threshold. Here, we show for silicon that in this regime the room-temperature phonons become thermally squeezed, which is a process that has not been reported before in this material. We find that the origin of this effect is the sudden femtosecond-laser-induced softening of interatomic bonds, which can also be described in terms of a modification of the potential energy surface. We further find in ab initio molecular-dynamics simulations on laser-excited potential energy surfaces that the atoms move in the same directions during the first stages of nonthermal melting and thermal phonon squeezing. Our results demonstrate how femtosecond-laser-induced coherent fluctuations precurse complete atomic disordering as a function of fluence. The common underlying bond-softening mechanism indicates that this relation between thermal squeezing and nonthermal melting is not material specific.

1.55 µm High-Speed QDs Lasers for Optical Telecommunication Applications

In this work investigation of the QDs formation and the fabrication of QD based semiconductor lasers for telecom applications are presented. InAs QDs grown on AlGaInAs lattice matched to InP substrates are used to fabricate lasers operating at 1.55 µm, which is the central wavelength for far distance data transmission. This wavelength is used due to its minimum attenuation in standard glass fibers. The incorporation of QDs in this material system is more complicated in comparison to InAs QDs in the GaAs system. Due to smaller lattice mismatch the formation of circular QDs, elongated QDs and quantum wires is possible. The influence of the different growth conditions, such as the growth temperature, beam equivalent pressure, amount of deposited material on the formation of the QDs is investigated. It was already demonstrated that the formation process of QDs can be changed by the arsenic species. The formation of more round shaped QDs was observed during the growth of QDs with As2, while for As4 dash-like QDs. In this work only As2 was used for the QD growth. Different growth parameters were investigated to optimize the optical properties, like photoluminescence linewidth, and to implement those QD ensembles into laser structures as active medium. By the implementation of those QDs into laser structures a full width at half maximum (FWHM) of 30 meV was achieved. Another part of the research includes the investigation of the influence of the layer design of lasers on its lasing properties. QD lasers were demonstrated with a modal gain of more than 10 cm-1 per QD layer. Another achievement is the large signal modulation with a maximum data rate of 15 Gbit/s. The implementation of optimized QDs in the laser structure allows to increase the modal gain up to 12 cm-1 per QD layer. A reduction of the waveguide layer thickness leads to a shorter transport time of the carriers into the active region and as a result a data rate up to 22 Gbit/s was achieved, which is so far the highest digital modulation rate obtained with any 1.55 µm QD laser. The implementation of etch stop layers into the laser structure provide the possibility to fabricate feedback gratings with well defined geometries for the realization of DFB lasers. These DFB lasers were fabricated by using a combination of dry and wet etching. Single mode operation at 1.55 µm with a high side mode suppression ratio of 50 dB was achieved.

Fabrication of diamond nanostructures and investigation of the imbedded NV centers

Diamant ist ein Material mit vielen außerordentlichen Eigenschaften, die ihn zu einem äußerst vielversprechenden Kandidaten für Anwendungen in Wissen-schaft und Technik machen. In den letzten Jahren wurde Diamant häufig als einzigartige Plattform für neue Anwendungen beispielsweise in der Quanteninformationstechnologie (QIT) oder in der Magnetometrie im Nanometermaßstab eingesetzt, wobei einer der wichtigsten lumineszierenden Gitterdefekte im Diamantgitter eingesetzt wird. Dabei handelt es sich um die sogenannten Stickstoff/Fehlenstellen-Farbzentren (NV-Zentren), die im sichtbaren Bereich mit einer absoluten Photostabilität bei Raumtemperatur emittieren. In dieser Arbeit wurden NV-Zentren in Diamantnanokristalliten und –nanosäulen untersucht, die während des Wachstumsprozesses erzeugt wurden. Einzelne Diamantnanokristallite und nanokristalline Diamantschichten (NCD), aus denen Nanosäulen geätzt wurden, wurden mithilfe der Hot Filament Chemical Vapour Deposition (HFCVD) abgeschieden. Zu Vergleichszwecken wurden auch ultrananokristalline Diamantschichten (UNCD) mittels Mikrowellen-CVD (MWCVD) hergestellt. Die Filme wurden sorgfältig in Bezug auf ihre Morphologie, kristallinen Eigenschaften und Zusammensetzung untersucht. Um die Möglichkeit einer Integration dieser Diamantschichten mit temperaturempfindlichen Materialien wie III/V-Halbleitern, Metallen mit niedrigem Schmelzpunkt oder Polymeren zu untersuchen, wurde der Einfluss der Substrattemperatur ermittelt. Eindimensionale NCD- und UNCD-Diamantnanostrukturen wurden mithilfe der Elektronenstrahllithographie (EBL) und reaktivem Ionenätzen in einem induktiv gekoppelten O2-Plasma (ICP-RIE) hergestellt. Zur Vorbereitung wurden zunächst die Ätzraten in Abhängigkeit von den vier wichtigsten Parametern ermittelt. Weitere Erkenntnisse über die Ätzmechanismen wurden durch Ätzexperiment mit unstrukturierten NCD- und UNCD-Schichten erhalten Mittels der EBL konnten mithilfe von Gold-Ätzmasken Nanosäulen mit Durchmessern von 50 nm bis zu 1 μm hergestellt werden.Eine optische Charakterisierung der NCD- und UNCD-Nanosäulen erfolgte mithilfe von Fluorenzenz-Mapping und Photomumineszenz-Spektroskopie. Diese Messungen ergaben, dass in beiden Arten von Säulen NV-Zentren vorhanden sind. Allerdings wurden nur in NCD-Säulen die gewünschten NV--Zentren gefunden, in UNCD-Säulen hingegen nur NV0-Zentren.

THz Plasma Waves in Field-Effect-Transistors: A Monte Carlo Study

Sensing with electromagnetic waves having frequencies in the Terahertz-range is a very attractive investigative method with applications in fundamental research and industrial settings. Up to now, a lot of sources and detectors are available. However, most of these systems are bulky and have to be used in controllable environments such as laboratories. In 1993 Dyakonov and Shur suggested that plasma waves developing in field-effect-transistors can be used to emit and detect THz-radiation. Later on, it was shown that these plasma waves lead to rectification and allows for building efficient detectors. In contrast to the prediction that these plasma waves lead to new promising solid-state sources, only a few weak sources are known up to now. This work studies THz plasma waves in semiconductor devices using the Monte Carlo method in order to resolve this issue. A fast Monte Carlo solver was developed implementing a nonparabolic bandstructure representation of the used semiconductors. By investigating simplified field-effect-transistors it was found that the plasma frequency follows under equilibrium conditions the analytical predictions. However, no current oscillations were found at room temperature or with a current flowing in the channel. For more complex structures, consisting of ungated and gated regions, it was found that the plasma frequency does not follow the value predicted by the dispersion relation of the gated nor the ungated device.

Amigo Sancho, cabalgamos por la red.

Se presenta memoria final de proyecto educativo que pretende aunar el uso de las TIC de forma significativa con el fomento de la lectura, la comunicación y la educación en valores que propugna la obra de 'El Quijote', utilizando la edición de un periódico realizado por el alumnado con ayuda de internet, cámara digital, ordenador y escáner. Se realiza en el CEIP Reyes Católicos de Vera, Almería. Los objetivos son: familiarizar al alumnado con las TIC; desarrollar habilidades que propicien la alfabetización funcional; posibilitar el incremento de la motivación, el disfrute y el interés en las experiencias de aprendizaje a través de internet; favorecer la oportunidad de intercambios lingüísticos orales, escritos y gráficos en un marco significativo; aprender a escuchar, opinar, debatir, compartir, dialogar y llegar a acuerdos; aprender a asumir responsabilidades; favorecer el trabajo el equipo; brindar la oportunidad para que se establezcan situaciones comunicativas diversas; mejorar la autoestima; crear un ambiente idóneo para investigar y realizar tareas; conocer el funcionamiento y la elaboración de un periódico; implicar a las familias así como a personas de diferentes profesiones en esta tarea investigativa; trabajar al menos durante dos cursos consecutivos bajo este enfoque. Los materiales obtenidos han sido: Cds con los periódicos editados; un ejemplar de cada periódico; libro del quijote interpretado por el alumnado de tercero; disquete con las traducciones al inglés; Don Quijote bilingüe.

Prevalencia de la depresión en una muestra de escolares asturianos.

Indagar en la estructura de la personalidad del sujeto para obtener la tasa de prevalencia de la depresión infantil, y la relación que establecen los problemas de índole afectiva, con el ambiente familiar, social, escolar que rodea al niño. Comprobar en qué medida pueden actuar estos factores inhibiendo el desarrollo intelectual. Para la primera fase de selección de casos se usa una muestra de los 109 sujetos de segunda etapa de EGB de dos colegios públicos de Oviedo. En la segunda fase de exploración de casos patológicos, se utiliza una muestra extraída de la anterior con un total de 44 sujetos divididos en cinco grupos atendiendo a las variables fracaso escolar y depresión. En la fase de selección de casos se analizan las siguientes variables: fracaso escolar, prevalencia de la depresión, aspectos de la historia personal del sujeto (datos de identificación, enfermedades, déficits sensoriomotrices, intelectuales, biológicos relaciones con la familia, etc.). En la fase de exploración de los posibles casos patológicos además de las variables anteriores se miden la inteligencia general, la personalidad, los comportamientos mal adaptados, el desarrollo evolutivo, etc. Expediente académico para medir el fracaso escolar. Cuestionarios de depresión CDS, CDI, SDS. Cuestionario entrevista para conocer la historia del sujeto. Matrices progresivas de Raven para medir la inteligencia general. CPQ de Catell, EPQJ de Eysennck, fábulas de Duss, para el estudio de la personalidad. Cuestionario aplicado a los padres para ver el desarrollo evolutivo del niño. El número de posibles casos patológicos atendiendo a las variables fracaso escolar y depresión fue del 40 por ciento. La tasa de la prevalencia de la depresión, ha sido del 37 por ciento. Existen diferencias significativas, entre los sujetos considerados como posibles casos patológicos y el resto de los sujetos en diferentes aspectos. Las relaciones negativas con los padres condicionan la personalidad del niño y determinan la existencia de trastorno mental tanto en niños que fracasan como en los que no fracasan. Los sujetos que fracasan y manifiestan trastornos mentales se les puede considerar como sujetos de alto riesgo evidenciándose factores negativos en algunos casos: clase social baja, problemas cerebrales, inteligencia baja, etc. La conclusión fundamental es que dentro de los niños que fracasan las neurosis depresivas se presentan con una frecuencia del 20 por ciento. El cuestionario más válido para la evaluación de la depresión en este estudio ha sido el CDI de M. Kovacs y el CDS es el que presenta menor validez en esta investigación.

La ansiedad del niño en el hospital.

Determinar el grado de ansiedad subsecuente a la hospitalización del niño. Comprobar la respuesta de ansiedad del niño a la intervención quirúrgica. Comprobar si diversas técnicas de intervención psicológica tales como la información, comunicación, ludoterapia y terapia de grupo son capaces de moderar la respuesta de ansiedad del niño en el hospital. 135 niños con edad entre 3 y 12 años, 75 de los cuales fueron extraídos al azar de los ingresados en el Hospital Materno Infantil Nuestra Señora de Covadonga Oviedo y constituían el grupo experimental. El resto eran niños no hospitalizados y constituían el grupo de control. Las variables medidas fueron las siguientes: inteligencia, personalidad, estado emocional, ansiedad, frecuencia cardiaca, tensión. El diseño de la investigación se hizo teniendo en cuenta dos subgrupos dentro del grupo experimental: niños hospitalizados para ser intervenidos quirúrgicamente y niños hospitalizados por enfermedad. Tanto estos grupos como el de control se subdividen en tres grupos: de 3 a 5 años, de 6 a 8 años y de 9 a 12. Las variables son medidas en el momento del ingreso y antes de la salida del hospital. Entre ambas mediciones se introducen técnicas de intervención psicológica: información, comunicación, ludoterapia y dinámica de grupos, para comprobar su efecto sobre la ansiedad del niño. Inteligencia: Terman Merril para 3 a 5 años y matrices progresivas de Raven para los niños de 6 a 12 años. Personalidad: ESPO de Coan y Catell, EPQJ de Eysenck. Ansiedad: CDS de Lang y Tisher y una escala de ansiedad elaborada para esta investigación, asimismo se registra periódicamente el ritmo cardiaco y la tensión arterial, estado emocional: test del árbol, de la familia. Se obtienen diferencias significativas entre el grupo de niños hospitalizados y no hospitalizados en: ansiedad, frecuencia cardiaca, tensión máxima y tensión mínima. Idénticas diferencias excepto la tensión mínima se dan entre el grupo de los hospitalizados por enfermedad y los operados. En el análisis por grupos de edad también resultan diferencias significativas en: ansiedad, frecuencia cardiaca y tensión máxima entre los grupos de niños hospitalizados para operar que han recibido intervención psicológica y los que no la han recibido. Igualmente en el análisis de los grupos de edad se encuentran diferencias significativas para los distintos parámetros. La hospitalización aumenta de forma estadísticamente significativa la ansiedad del niño, en todas las edades. La introducción de técnicas psicológicas con el fin de disminuir la ansiedad produjo resultados satisfactorios en función de las significaciones estadísticas obtenidas.

Poly-Si₁₋xGex Film Growth for Ni Germanosilicided Metal Gate

Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 nm CMOS generation. Fully silicidation metal gate (FUSI) is one of the most promising solutions. Furthermore, FUSI metal gate reduces gate-line sheet resistance, prevents boron penetration to channels, and has good process compatibility with high-k gate dielectric. Poly-SiGe gate technology is another solution because of its enhancement of boron activation and compatibility with the conventional CMOS process. Combination of these two technologies for the formation of fully germanosilicided metal gate makes the approach very attractive. In this paper, the deposition of undoped Poly-Si₁₋xGex (0 < x < 30% ) films onto SiO₂ in a low pressure chemical vapor deposition (LPCVD) system is described. Detailed growth conditions and the characterization of the grown films are presented.

A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing

The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.

A Multi-scale Model for Copper Dishing in Chemical-Mechanical Polishing

The present success in the manufacture of multi-layer interconnects in ultra-large-scale integration is largely due to the acceptable planarization capabilities of the chemical-mechanical polishing (CMP) process. In the past decade, copper has emerged as the preferred interconnect material. The greatest challenge in Cu CMP at present is the control of wafer surface non-uniformity at various scales. As the size of a wafer has increased to 300 mm, the wafer-level non-uniformity has assumed critical importance. Moreover, the pattern geometry in each die has become quite complex due to a wide range of feature sizes and multi-level structures. Therefore, it is important to develop a non-uniformity model that integrates wafer-, die- and feature-level variations into a unified, multi-scale dielectric erosion and Cu dishing model. In this paper, a systematic way of characterizing and modeling dishing in the single-step Cu CMP process is presented. The possible causes of dishing at each scale are identified in terms of several geometric and process parameters. The feature-scale pressure calculation based on the step-height at each polishing stage is introduced. The dishing model is based on pad elastic deformation and the evolving pattern geometry, and is integrated with the wafer- and die-level variations. Experimental and analytical means of determining the model parameters are outlined and the model is validated by polishing experiments on patterned wafers. Finally, practical approaches for minimizing Cu dishing are suggested.