862 resultados para Interface modification


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Eukaryotic translation initiation factor 5A (eIF5A) is the only cellular protein that contains the polyamine-modified lysine, hypusine [N(epsilon)-(4-amino-2-hydroxybutyl)lysine]. Hypusine occurs only in eukaryotes and certain archaea, but not in eubacteria. It is formed post-translationally by two consecutive enzymatic reactions catalyzed by deoxyhypusine synthase (DHS) and deoxyhypusine hydroxylase (DOHH). Hypusine modification is essential for the activity of eIF5A and for eukaryotic cell proliferation. eIF5A binds to the ribosome and stimulates translation in a hypusine-dependent manner, but its mode of action in translation is not well understood. Since quantities of highly pure hypusine-modified eIF5A is desired for structural studies as well as for determination of its binding sites on the ribosome, we have used a polycistronic vector, pST39, to express eIF5A alone, or to co-express human eIF5A-1 with DHS or with both DHS and DOHH in Escherichia coli cells, to engineer recombinant proteins, unmodified eIF5A, deoxyhypusine- or hypusine-modified eIF5A. We have accomplished production of three different forms of recombinant eIF5A in high quantity and purity. The recombinant hypusine-modified eIF5A was as active in methionyl-puromycin synthesis as the native, eIF5A (hypusine form) purified from mammalian tissue. The recombinant eIF5A proteins will be useful tools in future structure/function and the mechanism studies in translation.

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We have developed a theoretical study of magnetic bilayers composed by a ferromagnetic film grown in direct contact on an antiferromagnetic one. We have investigated the interface effects in this systems due to the interfilms coupling. We describe the interface effects by a Heisenberg like coupling with an additional unidirectional anisotropy. In the first approach we assume that the magnetic layers are thick enough to be described by the bulk parameters and they are coupled through the interaction between the magnetic moments located at the interface. We use this approach to calculate the modified dynamical response of each material. We use the magnetic permeability of the layers (with corrections introduced by interface interactions) to obtain a correlation between the interface characteristics and the physical behavior of the magnetic excitations propagating in the system. In the second model, we calculated an effective susceptibility of the system considering a nearly microscopical approach. The dynamic response obtained by this approach was used to study the modifications in the spectrum of the polaritons and its consequences on the attenuated total reflection (ATR). In addition, we have calculated the oblique reflectivity. We compare our result with those obtained for the dispersion relation of the magnetostatic modes in these systems

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We study magnetic interface roughness in F/AF bilayers. Two kinds of roughness were considered. The first one consists of isolated defects that divide the substrate in two regions, each one with an AF sub-lattice. The interface exchange coupling is considered uniform and presents a sudden change in the defects line, favoring Neel wall nucleation. Our results show the interface field dependence of the threshold thickness for the reorientation of the magnetization in the ferromagnetic film. Angular profiles show the relaxation of the magnetization, from Neel wall, at the interface, to reoriented state, at the surface. External magnetic field, perpendicular to the easy axis of the substrate, favors the reoriented state. Depending, of the external magnetic field intensity, parallel to the easy axis of the AF, the magnetization profile at surface can be parallel or perpendicular to the field direction. The second one treats of distributed deffects, periodically. The shape hysteresis curves, exchange bias and coercivity were characterized by interface field intensity and roughness pattern. Our results show that dipolar effects decrease the exchange bias and coercivity

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Injection-limited operation is identified in thin-film, alpha-NPD-based diodes. A detailed model for the impedance of the injection process is provided which considers the kinetics of filling/releasing of interface states as the key factor behind the injection mechanism. The injection model is able to simultaneously account for the steady-state, current-voltage (J-V) characteristics and impedance response. and is based on the sequential injection of holes mediated by energetically distributed surface states at the metal-organic interface. The model takes into account the vacuum level offset caused by the interface dipole, along with the partial shift of the interface level distribution with bias voltage. This approach connects the low-frequency (similar to 1 Hz) capacitance spectra, which exhibits a transition between positive to negative values, to the change in the occupancy of interface states with voltage. Simulations based on the model allow to derive the density of interface states effectively intervening in the carrier injection (similar to 5 x 10(12) cm(-2)), which exhibit a Gaussian-like distribution. A kinetically determined hole barrier is calculated at levels located similar to 0.4 eV below the contact work function. (C) 2008 Elsevier B.V. All rights reserved.

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Capacitance spectra of thin (< 200 nm) Alq(3) electron-only devices have been measured as a function of bias voltage. Capacitance spectra exhibit a flat response at high frequencies (> 10(3) Hz) and no feature related to the carrier transit time is observed. Toward low frequencies the spectra reach a maximum and develop a negative excess capacitance. Capacitance response along with current-voltage (J-V) characteristics are interpreted in terms of the injection of electrons mediated by surface states at the metal organic interface. A detailed model for the impedance of the injection process is provided that highlights the role of the filling/releasing kinetics of energetically distributed interface states. This approach connects the whole capacitance spectra to the occupancy of interface states, with no additional information about bulk trap levels. Simulations based on the model allow to derive the density of interface states effectively intervening in the carrier injection (similar to 1.5 x 10(12) cm (2)). (C) 2008 Elsevier B.V. All rights reserved.

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The results of nanohardness measurements at a film surface and film-substrate interface are presented and discussed. An electron beam device was used to deposit a Ti film on a 304 stainless steel (304 SS) substrate. The diluted interface was obtained by thermal activated atomic diffusion. The. Ti film and Ti film-304 SS interface were analyzed by energy dispersive spectrometry and were observed using atomic force microscopy. The nanohardness of the Ti film-304 SS system was measured by a nanoindentation technique. The results showed the Ti film-304 SS interface had a higher hardness value than the Ti film and 304 SS substrate. The Ti film surface had a lower hardness due to the presence of a TiO2 thin layer.

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Silicon carbide (SiC) has been employed in many different fields such as ballistic armor, thermal coating, high performance mirror substrate, semiconductors devices, among other things. Plasma application over the silicon carbide ceramics is relatively recent and it is able to promote relevant superficial modifications. Plasma expander was used in this work which was supplied by nitrogen and switched by a capacitor bank. Nitrogen plasma was applied over ceramic samples for 20 minutes, in a total medium of 1440 plasma pulses. SiC ceramics were produced by uniaxial pressing method (40 MPa) associated to isostatic pressing (300 MPa) and sintered at 1950 degrees C under argon gas atmosphere. Silicon carbide (beta-sic - BF-12) supplied by HC-Starck and sintering additive (7.6% YAG - Yttrium Aluminum Garnet) were used in order to obtain the ceramics. Before and after the plasma application, the samples were characterized by SEM, AFM, contact angle and surface energy measurement.

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Surface treatment of polymers by discharge plasmas has increasingly found industrial applications due to its capability of modifying uniformly the surface without changing the material bulk properties. This work deals with surface modification of polyethylene terephthalate (PET) by a dielectric barrier discharge (DBD) at atmospheric pressure. The treatments were conducted in air, nitrogen or argon plasma. The polymer surface was characterized by contact angle measurement, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The results show that the plasma treatment introduces oxygen-and nitrogen-related polar groups on the polymer surface and promotes the surface roughening. Both plasma-induced surface modifications contribute to the enhancement of the polymer wettability.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)