Asymmetrical low-voltage ride through of brushless doubly fed induction generators for the wind power generation

Compared with the Doubly fed induction generators (DFIG), the brushless doubly fed induction generator (BDFIG) has a commercial potential for wind power generation due to its lower cost and higher reliability. In the most recent grid codes, wind generators are required to be capable of riding through low voltage faults. As a result of the negative sequence, induction generators response differently in asymmetrical voltage dips compared with the symmetrical dip. This paper gave a full behavior analysis of the BDFIG under different types of the asymmetrical fault and proposed a novel control strategy for the BDFIG to ride through asymmetrical low voltage dips without any extra hardware such as crowbars. The proposed control strategies are experimentally verified by a 250-kW BDFIG. © 2012 IEEE.

Instability of the steady-state regime of generation in laser diodes with a broad gain spectrum

The laser-diode parameters at which the steady-state regime of generation becomes unstable are analyzed within the framework of the mode-locking model. The crucial role of the transverse inhomogeneity of the field, pumping intensity, and spectrum width in developing the instabilities of the steady-state regime of generation is demonstrated. The calculated values of the instability threshold are shown to be consistent with the experimental results. © 2008 Springer Science+Business Media, Inc.

Role of a high gain of the medium in superradiance generation and in observation of coherent effects in semiconductor lasers

A theoretical model of superradiant pulse generation in semiconductor laser structures is developed. It is shown that a high optical gain of the medium can overcome phase relaxation and results in a built-up superradiant state (macroscopic dipole) in an assembly of electron - hole pairs on a time scale much longer than the characteristic polarisation relaxation time T2. A criterion of the superradiance generation is the condition acmT2 > 1, where α is the gain coefficient and cm is the speed of light in the medium. The theoretical model describes both qualitatively and quantitatively the author's own experimental results.

High power, low-jitter encoded picosecond pulse generation using an rf-locked self-q-switched multicontact GaAs/GaAlAs diode laser

The RF locking of a self-Q-switching diode laser is shown to reduce the jitter of a 2.48 GHz train of 1 W peak power picosecond pulses to less than 300 fs. By using direct modulation of the loss in the Q-switched laser, direct encoding of data has been achieved at rates in excess of 2 Gbit/s.

Narrow line high power picosecond pulse generation in a multicontact distributed feedback laser using modified Q switching

High power bandwidth-limited picosecond pulses with peak powers in excess of 200 mW have been generated using multi-contact distributed feedback laser diodes for the first time. The pulses have widths typically less than 10 ps, time-bandwidth products of as little as 0·24, and can be generated on demand at generator limited repetition rates of up to 140 MHz.

Ultrashort pulse generation in diode lasers

The basic ideas and current state of the art of ultrashort pulse generation by injection lasers are reviewed. All developed techniques, including gain switching, Q-switching, and mode-locking are described and compared. A simple theoretical treatment of a diode laser which emits picosecond light pulses is discussed. Some fundamental limits of the pulse parameters are discussed. Finally, compression of chirped optical pulses by optical fibres and the soliton effect is considered. © 1992 Chapman & Hall.

Generation of picosecond pulses with a repetition frequency of 100 GHz by a multicomponent injection laser

A mode for generating a sequence of spectrally limited pulses with a duration of 2 nsec and a repetition frequency of approximately 100 GHz in AlGaAs/GaAs by an injection heterolaser, which has amplifying and absorbing parts combined in a common resonator, is discussed.

Generation of bandwidth-limited 2 ps pulses with 100 GHz repetition rate from multisegmented injection laser

A new dynamic regime in a multisegmented AlGaAs/GaAs DH injection laser has been realised. Generation of bandwidth-limited 100 GHz repetition rate pulses has been demonstrated. This value is claimed to be the largest ever reported for an ultrashort pulse repetition frequency obtained directly from a laser.

GENERATION OF PICOSECOND PULSES IN AN INJECTION LASER WITH AN EXTERNAL SELECTIVE RESONATOR.

Pulses of 15 psec duration were generated by an injection laser with an external dispersive resonator operating in the active mode-locking regime. This regime was attained by subjecting the laser diode to a current of high frequency equal to the intermode interval in the external resonator. The duration of the pulses was determined by an autocorrelation method in which the second harmonic was generated in an LiIO//3 crystal.

Generation of SFR few-group constants using the Monte Carlo code serpent

In this study, the Serpent Monte Carlo code was used as a tool for preparation of homogenized few-group cross sections for the nodal diffusion analysis of Sodium cooled Fast Reactor (SFR) cores. Few-group constants for two reference SFR cores were generated by Serpent and then employed by nodal diffusion code DYN3D in 2D full core calculations. The DYN3D results were verified against the references full core Serpent Monte Carlo solutions. A good agreement between the reference Monte Carlo and nodal diffusion results was observed demonstrating the feasibility of using Serpent for generation of few-group constants for the deterministic SFR analysis.

28 Gb/s unequalized PAM3 modulation of an 850 nm VCSEL for next-generation datacommunication links

An 850 nm vertical-cavity surface-emitting laser is modulated at 28 Gb/s using pulseamplitude modulation with three levels. Unequalized transmission over 100 m of OM3 MMF is demonstrated, with advantages over NRZ and PAM4 modulation. © OSA 2012.

Shaping pulse transitions by active voltage control for reduced EMI generation

High-performance power switching devices (IGBT/MOSFET) realise high-performance power converters. Unfortunately, with a high switching speed of the IGBT or MOSFET freewheel diode chopper cell, the circuit has intrinsic sources of high-level EMI. Therefore, costly EMI filters or shielding are normally demanded on the load and supply side. Although an S-shaped voltage transient with a high order of derivation eliminates the discontinuity and could suppress HF spectrum of EMI emissions, a practical control scheme is still under development. In this paper, Active Voltage Control (AVC) is applied to successfully define IGBT switching dynamics with a smoothed Gaussian waveform so a reduced EMI can be achieved without extra EMI suppression devices. © 2013 IEEE.