914 resultados para DC power transmission


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A group of prototype integrated circuits are presented for a wireless neural recording micro-system. An inductive link was built for transcutaneous wireless power transfer and data transmission. Power and data were transmitted by a pair of coils on a same carrier frequency. The integrated receiver circuitry was composed of a full-wave bridge rectifier, a voltage regulator, a date recovery circuit, a clock recovery circuit and a power detector. The amplifiers were designed with a limited bandwidth for neural signals acquisition. An integrated FM transmitter was used to transmit the extracted neural signals to external equipments. 16.5 mW power and 50 bps - 2.5 Kbps command data can be received over 1 MHz carrier within 10 mm. The total gain of 60 dB was obtained by the preamplifier and a main amplifier at 0.95Hz - 13.41 KHz with 0.215 mW power dissipation. The power consumption of the 100 MHz ASK transmitter is 0.374 mW. All the integrated circuits operated under a 3.3 V power supply except the voltage regulator.

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A low-cost low-power single chip WLAN 802.11a transceiver is designed for personal communication terminal and local multimedia data transmission. It has less than 130mA current dissipation, maximal 67dB gain and can be programmed to be 20dB minimal gain. The receiver system noise figure is 6.4dB in hige-gain mode.

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The paper proposes a high efficiency RFID UHF power converter unit to overcome the low efficiency problem. This power converter is mainly composed of an RF-DC converter and a DC-DC converter. In order to overcome the low efficiency problem in low current consuming condition, a DC-DC converter is added to conventional single RF-DC converter rectifier to increase the rectifying efficiency of the RFDC rectifier. The power converter is implemented in a 0.18 um mixed signal, 1p6m CMOS technology. Simulation shows the power converter has an average improvement of 5% and can achieve efficiency as high as 30% with 900MHz, 16uW RF input power and 1.3 V 3.6uA DC output.

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This paper presents a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. The proposed charge pump has been used as a part of the power supply section of fully integrated passive radio frequency identification(RFID) transponder IC, which has been implemented in a 0.35-um CMOS technology with embedded EEPROM offered by Chartered Semiconductor. The proposed DC/DC charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The analytical model of the voltage multiplier, the comparison with other charge pumps, the simulation results, and the chip testing results are presented.

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A DC-offset cancellation scheme in the 5GHz direct-conversion receiver compliant with IEEE 802.11a wireless LAN standard is described in this paper. It uses the analog feedback loop to eliminate the DC-offset at the output of the double-balanced mixer. The mixer has a simulation voltage conversion gain of IMB at 5.2GHz, noise figure of 9.67dB, IIP3 of 7.6dBm. The solution provides 39.1dB reduction according to the leakage value at LO and mixer load resistors, the additional noise figure added to mixer is less than 0.9dB, the added power dissipation is 0.1mW and was fabricated in 60GHz 0.35 mu m SiGe BiCMOS technology.

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This paper presents a power supply solution for fully integrated passive radio-frequency identification(RFID) transponder IC,which has been implemented in 0.35μm CMOS technology with embedded EEPROM from Chartered Semiconductor.The proposed AC/DC and DC/DC charge pumps can generate stable output for RFID applications with quite low power dissipation and extremely high pumping efficiency.An analytical model of the voltage multiplier,comparison with other charge pumps,simulation results,and chip testing results are presented.

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A large area multi-finger configuration power SiGe HBT device(with an emitter area of about 880μm~2)was fabricated with 2μm double-mesa technology.The maximum DC current gain β is 214.The BV_(CEO) is up to 10V,and the BV_(CBO) is up to 16V with a collector doping concentration of 1×10~(17)cm~(-3) and collector thickness of 400nm.The device exhibits a maximum oscillation frequency f_(max) of 19.3GHz and a cut-off frequency f_T of 18.0GHz at a DC bias point of I_C=30mA and V_(CE)=3V.MSG(maximum stable gain)is 24.5dB,and U(Mason unilateral gain)is 26.6dB at 1GHz.Due to the novel distribution layout,no notable current gain fall-off or thermal effects are observed in the I-V characteristics at high collector current.

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A multi-finger structure power SiGe HBT device (with an emitter area of about 166μm^2) is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V.

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This paper reports on the design, fabrication, and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application. This paper mainly aims at two aspects. One is to improve the optical coupling between the laser and modulator; another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator. The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA. Output power at 100mA is more than 10mW. The extinction characteristics,modulation bandwidth, and electrical return loss are measured. 3dB bandwidth more than 10GHz is monitored.

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In this paper we proposed a single ridge waveguide electroabsorption modulated distributed feedback laser (EML) for long-haul high-speed optical fiber communication system. This EML was successfully fabricated by two step metal organic vapor phase epitaxy (MOVPE) including selective area growth (SAG) and helium partially implantation. No obvious changes of the threshold current (< 0.2 mA), extinction ratio (< 0.1 dB), output power (< 0.2 dBm) and isolation resistance were achieved in the preliminary aging test. With 2.5 Gb/s NRZ modulation, no power penalty was observed after the optical signal was transmitted through 280 Km normal single mode fiber.

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We report a 75dB, 2.8mW, 100Hz-10kHz envelope detector in a 1.5mm 2.8V CMOS technology. The envelope detector performs input-dc-insensitive voltage-to-currentconverting rectification followed by novel nanopower current-mode peak detection. The use of a subthreshold wide- linear-range transconductor (WLR OTA) allows greater than 1.7Vpp input voltage swings. We show theoretically that this optimal performance is technology-independent for the given topology and may be improved only by spending more power. A novel circuit topology is used to perform 140nW peak detection with controllable attack and release time constants. The lower limits of envelope detection are determined by the more dominant of two effects: The first effect is caused by the inability of amplified high-frequency signals to exceed the deadzone created by exponential nonlinearities in the rectifier. The second effect is due to an output current caused by thermal noise rectification. We demonstrate good agreement of experimentally measured results with theory. The envelope detector is useful in low power bionic implants for the deaf, hearing aids, and speech-recognition front ends. Extension of the envelope detector to higher- frequency applications is straightforward if power consumption is inc

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This paper reports on the design and the manufacturing of an integrated DCDC converter, which respects the specificity of sensor node network: compactness, high efficiency in acquisition and transmission modes, and compatibility with miniature Lithium batteries. A novel integrated circuit (ASIC) has been designed and manufactured to provide regulated Voltage to the sensor node from miniaturized, thin film Lithium batteries. Then, a 3D integration technique has been used to integrate this ASIC in a 3 layers stack with high efficiency passives components, mixing the wafer level technologies from two different research institutions. Electrical results have demonstrated the feasibility of this integrated system and experiments have shown significant improvements in the case of oscillations in regulated voltage. However, stability of this output voltage toward the input voltage has still to be improved.

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The power consumption of wireless sensor networks (WSN) module is an important practical concern in building energy management (BEM) system deployments. A set of metrics are created to assess the power profiles of WSN in real world condition. The aim of this work is to understand and eventually eliminate the uncertainties in WSN power consumption during long term deployments and the compatibility with existing and emerging energy harvesting technologies. This paper investigates the key metrics in data processing, wireless data transmission, data sensing and duty cycle parameter to understand the system power profile from a practical deployment prospective. Based on the proposed analysis, the impacts of individual metric on power consumption in a typical BEM application are presented and the subsequent low power solutions are investigated.

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In the last decade, we have witnessed the emergence of large, warehouse-scale data centres which have enabled new internet-based software applications such as cloud computing, search engines, social media, e-government etc. Such data centres consist of large collections of servers interconnected using short-reach (reach up to a few hundred meters) optical interconnect. Today, transceivers for these applications achieve up to 100Gb/s by multiplexing 10x 10Gb/s or 4x 25Gb/s channels. In the near future however, data centre operators have expressed a need for optical links which can support 400Gb/s up to 1Tb/s. The crucial challenge is to achieve this in the same footprint (same transceiver module) and with similar power consumption as today’s technology. Straightforward scaling of the currently used space or wavelength division multiplexing may be difficult to achieve: indeed a 1Tb/s transceiver would require integration of 40 VCSELs (vertical cavity surface emitting laser diode, widely used for short‐reach optical interconnect), 40 photodiodes and the electronics operating at 25Gb/s in the same module as today’s 100Gb/s transceiver. Pushing the bit rate on such links beyond today’s commercially available 100Gb/s/fibre will require new generations of VCSELs and their driver and receiver electronics. This work looks into a number of state‐of-the-art technologies and investigates their performance restraints and recommends different set of designs, specifically targeting multilevel modulation formats. Several methods to extend the bandwidth using deep submicron (65nm and 28nm) CMOS technology are explored in this work, while also maintaining a focus upon reducing power consumption and chip area. The techniques used were pre-emphasis in rising and falling edges of the signal and bandwidth extensions by inductive peaking and different local feedback techniques. These techniques have been applied to a transmitter and receiver developed for advanced modulation formats such as PAM-4 (4 level pulse amplitude modulation). Such modulation format can increase the throughput per individual channel, which helps to overcome the challenges mentioned above to realize 400Gb/s to 1Tb/s transceivers.

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This thesis is concerned with inductive charging of electric vehicle batteries. Rectified power form the 50/60 Hz utility feeds a dc-ac converter which delivers high-frequency ac power to the electric vehicle inductive coupling inlet. The inlet configuration has been defined by the Society of Automotive Engineers in Recommended Practice J-1773. This thesis studies converter topologies related to the series resonant converter. When coupled to the vehicle inlet, the frequency-controlled series-resonant converter results in a capacitively-filtered series-parallel LCLC (SP-LCLC) resonant converter topology with zero voltage switching and many other desirable features. A novel time-domain transformation analysis, termed Modal Analysis, is developed, using a state variable transformation, to analyze and characterize this multi-resonant fourth-orderconverter. Next, Fundamental Mode Approximation (FMA) Analysis, based on a voltage-source model of the load, and its novel extension, Rectifier-Compensated FMA (RCFMA) Analysis, are developed and applied to the SP-LCLC converter. The RCFMA Analysis is a simpler and more intuitive analysis than the Modal Analysis, and provides a relatively accurate closed-form solution for the converter behavior. Phase control of the SP-LCLC converter is investigated as a control option. FMA and RCFMA Analyses are used for detailed characterization. The analyses identify areas of operation, which are also validated experimentally, where it is advantageous to phase control the converter. A novel hybrid control scheme is proposed which integrates frequency and phase control and achieves reduced operating frequency range and improved partial-load efficiency. The phase-controlled SP-LCLC converter can also be configured with a parallel load and is an excellent option for the application. The resulting topology implements soft-switching over the entire load range and has high full-load and partial-load efficiencies. RCFMA Analysis is used to analyze and characterize the new converter topology, and good correlation is shown with experimental results. Finally, a novel single-stage power-factor-corrected ac-dc converter is introduced, which uses the current-source characteristic of the SP-LCLC topology to provide power factor correction over a wide output power range from zero to full load. This converter exhibits all the advantageous characteristics of its dc-dc counterpart, with a reduced parts count and cost. Simulation and experimental results verify the operation of the new converter.