Guías y principios que podrían ser usados para un acuerdo legal regional = Principles and guidelines which may be used for a regional legal agreement

Incluye Bibliografía

Survey of the needs for technical assistance and the ability to provide such: a discussion of the survey findings and of the principles and mechanism of technical co-operation among developing countries

Includes bibliography

Suggestions regarding the principles which may be adopted by the Caribbean countries in negotiating agreements for the avoidance of double taxation with developed countries

Includes bibliography

Lineamientos de un programa regional para el fortalecimiento de la cooperación entre redes y sistemas nacionales de información para el desarrollo en América Latina y el Caribe (INFOLAC) = Basic principles for a regional programme to strengthen co-operation among national information networks and systems for development in Latin America and the Caribbean (INFOLAC)

Contiene antecedentes y lineamientos para formular e impulsar un programa regional de cooperacion entre redes y sistemas nacionales de informacion existentes en America Latina y el Caribe.

First-Principles Study of Pressure-Induced Phase Transitions and Electronic Properties of Ag2MoO4

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

First principles investigations on the electronic structure of anchor groups on ZnO nanowires and surfaces

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

First-principles simulation of elastic constants and electronic properties of GaN

The electronic and structural properties and elastic constants of the wurtzite phase of GaN, was investigated by computer simulation at Density Functional Theory level, with B3LYP and B3PW hybrid functional. The electronic properties were investigated through the analysis of the band structures and density of states, and the mechanical properties were studied through the calculus of the elastic constants: C11, C33, C44, C12, and C13. The results show that the maximum of the valence band and the minimum of the conduction band are both located at the Γ point, indicating that GaN is a direct band gap semiconductor. The following constants were obtained for B3LYP and B3PW (in brackets): C11 = 366.9 [372.4], C33 = 390.9 [393.4], C44 = 99.1 [96.9], C12 = 143.6 [155.2], and C13 = 107.6 [121.4].