Storage of classical information in quantum spins

Digital magnetic recording is based on the storage of a bit of information in the orientation of a magnetic system with two stable ground states. Here we address two fundamental problems that arise when this is done on a quantized spin: quantum spin tunneling and backaction of the readout process. We show that fundamental differences exist between integer and semi-integer spins when it comes to both reading and recording classical information in a quantized spin. Our findings imply fundamental limits to the miniaturization of magnetic bits and are relevant to recent experiments where a spin-polarized scanning tunneling microscope reads and records a classical bit in the spin orientation of a single magnetic atom.

Coherent-light emission from exciton condensates in semiconductor quantum wells

We show that a quasi-two dimensional condensate of optically active excitons emits coherent light even in the absence of population inversion. This allows an unambiguous and clear experimental detection of the condensed phase. We prove that, due to the exciton–photon coupling, quantum and thermal fluctuations do not destroy condensation at finite temperature. Suitable conditions to achieve condensation are temperatures of a few K for typical exciton densities and the use of a pulsed and preferably circularly polarized, laser.

Exciton beats in GaAs quantum wells: bosonic representation and collective effects

We discuss light–heavy hole beats observed in transient optical experiments in GaAs quantum wells in terms of a free-boson coherent state model. This approach is compared with descriptions based on few-level representations. Results lead to an interpretation of the beats as due to classical electromagnetic interference. The boson picture correctly describes photon excitation of extended states and accounts for experiments involving coherent control of the exciton density and Rayleigh scattering beating.

Colossal anisotropy in diluted magnetic topological insulators

We consider dilute magnetic doping in the surface of a three dimensional topological insulator where a two dimensional Dirac electron gas resides. We find that exchange coupling between magnetic atoms and the Dirac electrons has a strong and peculiar effect on both. First, the exchange-induced single ion magnetic anisotropy is very large and favors off-plane orientation. In the case of a ferromagnetically ordered phase, we find a colossal magnetic anisotropy energy, of the order of the critical temperature. Second, a persistent electronic current circulates around the magnetic atom and, in the case of a ferromagnetic phase, around the edges of the surface.

Spin-filtered edge states in graphene

Spin–orbit coupling changes graphene, in principle, into a two-dimensional topological insulator, also known as quantum spin Hall insulator. One of the expected consequences is the existence of spin-filtered edge states that carry dissipationless spin currents and undergo no backscattering in the presence of non-magnetic disorder, leading to quantization of conductance. Whereas, due to the small size of spin–orbit coupling in graphene, the experimental observation of these remarkable predictions is unlikely, the theoretical understanding of these spin-filtered states is shedding light on the electronic properties of edge states in other two-dimensional quantum spin Hall insulators. Here we review the effect of a variety of perturbations, like curvature, disorder, edge reconstruction, edge crystallographic orientation, and Coulomb interactions on the electronic properties of these spin filtered states.

Ultrafast coherent spectroscopy of the Fermi edge singularity

Paper submitted to the XVI Sitges Conference on Statistical Mechanics, Sitges, Barcelona, Spain, 7-11 June 1999.

Optical spin transfer in ferromagnetic semiconductors

Circularly polarized laser pulses that excite electron-hole pairs across the band gap of (III,Mn)V ferromagnetic semiconductors can be used to manipulate and to study collective magnetization dynamics. The initial spin orientation of a photocarrier in a (III,V) semiconductors is determined by the polarization state of the laser. We show that the photocarrier spin can be irreversibly transferred to the collective magnetization, whose dynamics can consequently be flexibly controlled by suitably chosen laser pulses. As illustrations we demonstrate the feasibility of all optical ferromagnetic resonance and optical magnetization reorientation.

Optical spin transfer in ferromagnetic semiconductors [poster]

Poster presented in the International Conference of Magnetism, Rome, July 2003.

Tunnel magnetoresistance in GaMnAs: going beyond Jullière formula

The relation between tunnel magnetoresistance (TMR) and spin polarization is explored for GaMnAs∕GaAlAs∕GaMnAs structures where the carriers experience strong spin–orbit interactions. TMR is calculated using the Landauer approach. The materials are described in the 6 band k⋅p model which includes spin–orbit interaction. Ferromagnetism is described in the virtual crystal mean field approximations. Our results indicate that TMR is a function of spin polarization and barrier thickness. As a result of the stong spin–orbit interactions, TMR also depends on the the angle between current flow direction and the electrode magnetization. These results compromise the validity of Julliere formula.

Ballistic spin-valves with Ni nanocontacts

Poster presented in TNT 2005 "Trends in Nanotechnology", Oviedo, Spain, 29 August-02 September, 2005.

Anisotropic magnetoresistance in single electron transport

We study the effect of magnetic anisotropy in a single electron transistor with ferromagnetic electrodes and a non-magnetic island. We identify the variation δμ of the chemical potential of the electrodes as a function of the magnetization orientation as a key quantity that permits to tune the electrical properties of the device. Different effects occur depending on the relative size of δμ and the charging energy. We provide preliminary quantitative estimates of δμ using a very simple toy model for the electrodes.

Mn-doped II-VI quantum dots: artificial molecular magnets

The notion of artificial atom relies on the capability to change the number of carriers one by one in semiconductor quantum dots, and the resulting changes in their electronic structure. Organic molecules with transition metal atoms that have a net magnetic moment and display hysteretic behaviour are known as single molecule magnets (SMM). The fabrication of CdTe quantum dots chemically doped with a controlled number of Mn atoms and with a number of carriers controlled either electrically or optically paves the way towards a new concept in nanomagnetism: the artificial single molecule magnet. Here we study the magnetic properties of a Mn-doped CdTe quantum dot for different charge states and show to what extent they behave like a single molecule magnet.

Electronic structure and transport properties of atomic NiO spinvalves

Ab initio quantum transport calculations show that short NiO chains suspended in Ni nanocontacts present a very strong spin-polarization of the conductance.The generalized gradient approximation we use here predicts a similar polarization of the conductance as the one previously computed with non-local exchange, confirming the robustness of the result. Their use as nanoscopic spinvalves is proposed.

Inelastic electron tunneling spectroscopy of a Mn dimer

A scanning tunneling microscope can probe the inelastic spin excitations of single magnetic atoms in a surface via spin-flip assisted tunneling. A particular and intriguing case is the Mn dimer case. We show here that the existing theories for inelastic transport spectroscopy do not explain the observed spin transitions when both atoms are equally coupled to the scanning tunneling microscope tip and the substrate, the most likely experimental situation. The hyperfine coupling to the nuclear spins is shown to lead to a finite excitation amplitude, but the physical mechanism leading to the large inelastic signal observed is still unknown. We discuss some other alternatives that break the symmetry of the system and allow for larger excitation probabilities.

Probing a single nuclear spin in a silicon single electron transistor

We study single electron transport across a single Bi dopant in a silicon nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin I = 9/2 affects the transport characteristics of the device. In the sequential tunneling regime we find that at, temperatures in the range of 100 mK, dI/dV curves reflect the zero field hyperfine splitting as well as its evolution under an applied magnetic field. Our non-equilibrium quantum simulations show that nuclear spins can be partially polarized parallel or antiparallel to the electronic spin just tuning the applied bias.