Generation of optimized wavelength-tunable optical pulse from an uncooled gain-switched Fabry-Perot semiconductor laser using optical amplifier as external light injection

We present a novel system design that can generate the optimized wavelength-tunable optical pulse streams from an uncooled gain-switched Fabry-Perot semiconductor laser using an optical amplifier as external light source. The timing jitter of gain-switched laser has been reduced from about 3 ps to 600 fs and the pulse width has been optimized by using our system. The stability of the system was also experimentally investigated. Our results show that an uncooled gain-switched FP laser system can feasibly produce the stable optical pulse trains with pulse width of 18 ps at the repetition frequency of 5 GHz during 7 h continuous working. We respectively proved the system feasibility under 1 GHz, 2.5 GHz and 5 GHz operation. (c) 2008 Elsevier B.V. All rights reserved.

Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing

Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.

A new dual injection system for AMS facility

IEECAS SKLLQG

Development of external electron-beam enhancement of the Penning ionization gauge ion source

To study the injection of additional electrons from an external electron gun into the plasma of a Penning ionization gauge (PIG) ion source, a test bench for the external electron-beam enhancement of the PIG (E-PIG) ion source was set up. A source magnet assembly was built to satisfy the request for magnetic field configuration of the E-PIG ion source. Numerical calculations have been done to optimize the magnetic field configuration so as to fit the primary electrons to be fed into the PIG discharge chamber along the spreading magnetic field lines. Many possible methods for improving the performance and stability of the PIG ion source have been used in the E-PIG ion source, including the use of multicrystal LaB6 cathode and optimized axial magnetic field. This article presents a detailed design of the E-PIG ion source. Substantial enhancement of ion charge state is expected to be observed which demonstrates that the E-PIG is a viable alternative to other much more costly and difficult to operate devices for the production of intense ion beams of higher charge state.