948 resultados para C-doped SiO2 films


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The photobleaching of the lasing dye Rhodamine 6G embedded in the solid matrix poly(methyl methacrylate) was investigated using a photoacoustic technique. Chopped laser radiation from an argon ion laser at four different wavelengths was used for the study. Experimental results indicate that the photobleaching rate is directly proportional to the incident laser power while it decreases with increase in concentration of the dye molecules. In the present case we have not observed any dependence of photobleaching on the chopping frequency. One-photon absorption is found to be responsible for the photobleaching of the dye within the selected range of laser power

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The photobleaching of the lasing dye Rhodamine 6G embedded in the solid matrix poly(methyl methacrylate) was investigated using a photoacoustic technique. Chopped laser radiation from an argon ion laser at four different wavelengths was used for the study. Experimental results indicate that the photobleaching rate is directly proportional to the incident laser power while it decreases with increase in concentration of the dye molecules. In the present case we have not observed any dependence of photobleaching on the chopping frequency. One-photon absorption is found to be responsible for the photobleaching of the dye within the selected range of laser power.

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Physical and optical properties of various free base and metallic phthalocyanine (Pc) doped glass matrix are reported for the first time. Absorption spectral measurements of H2Pc, MnPc, NiPc, CoPc, CuPc, MoOPc, ZnPc and FePc doped borate glass matrix have been made in the 200–1100 nm region and the spectra obtained are analyzed in the 2.1–6.2 eV region to obtain the optical band gap (Eg) and the width of the band tail (Et). Other important optical and physical parameters viz. refractive index (n), molar extinction coefficient ("), density (½), glass transition temperature (Tg), molecular concentration (N ), polaron radius (rp), intermolecular separation (R), molar refractivity (Rm) are also reported

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Physical and optical properties of various free base and metallic phthalocyanine (Pc) doped glass matrix are reported for the first time. Absorption spectral measurements of H2Pc, MnPc, NiPc, CoPc, CuPc, MoOPc, ZnPc and FePc doped borate glass matrix have been made in the 200–1100 nm region and the spectra obtained are analyzed in the 2.1–6.2 eV region to obtain the optical band gap (Eg) and the width of the band tail (Et). Other important optical and physical parameters viz. refractive index (n), molar extinction coefficient ("), density (½), glass transition temperature (Tg), molecular concentration (N ), polaron radius (rp), intermolecular separation (R), molar refractivity (Rm) are also reported.

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Physical and optical properties of various free base and metallic phthalocyanine (Pc) doped glass matrix are reported for the first time. Absorption spectral measurements of H2Pc, MnPc, NiPc, CoPc, CuPc, MoOPc, ZnPc and FePc doped borate glass matrix have been made in the 200–1100 nm region and the spectra obtained are analyzed in the 2.1–6.2 eV region to obtain the optical band gap (Eg) and the width of the band tail (Et). Other important optical and physical parameters viz. refractive index (n), molar extinction coefficient ("), density (½), glass transition temperature (Tg), molecular concentration (N ), polaron radius (rp), intermolecular separation (R), molar refractivity (Rm) are also reported.

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The direction dependant wavelength selective transmission mechanism in poly (methyl methacrylate)(PMMA) rods doped with C 540 dye and C 540:Rh.B dye mixture as a combination has been investigated. When a polished slice of pure C 540 doped polymer rod was used side by side with a C540:Rh B doped rod with acceptor concentration [A] = 7x10-4 m/l , we could notice more than 100% change in the transmitted intensity along opposite directions at the C 540, Rh B emission and the excitation wavelengths . A blue high bright LED emitting at a peak wavelength 465nm was used as the excitation source.

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Thermal diffusivity of the composites of camphor sulphonic acid (CSA) doped polyaniline (PANI) and its composites with cobalt phthalocyanine (CoPc) has been measured using open cell photoacoustic technique. Analysis of the data shows that the effective thermal diffusivity value can be tuned by varying the relative volume fraction of the constituents. It is seen that polaron assisted heat transfer mechanism is dominant in CSA doped PANI and these composites exhibit a thermal diffusivity value which is intermediate to that of CSA doped PANI and CoPc. The results obtained are correlated with the electrical conductivity and hardness measurements carried out on the samples

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Thermal diffusivity of the composites of camphor sulphonic acid (CSA) doped polyaniline (PANI) and its composites with cobalt phthalocyanine (CoPc) has been measured using open cell photoacoustic technique. Analysis of the data shows that the effective thermal diffusivity value can be tuned by varying the relative volume fraction of the constituents. It is seen that polaron assisted heat transfer mechanism is dominant in CSA doped PANI and these composites exhibit a thermal diffusivity value which is intermediate to that of CSA doped PANI and CoPc. The results obtained are correlated with the electrical conductivity and hardness measurements carried out on the samples.

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chemical Sciences and Technology Division, National Institute for Interdisciplinary Science and Technology, CSIR

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The annealing effect on the spectral and nonlinear optical NLO characteristics of ZnO thin films deposited on quartz substrates by sol-gel process is investigated. As the annealing temperature increases from 300–1050 °C, there is a decrease in the band gap, which indicates the changes of the interface of ZnO. ZnO is reported to show two emission bands, an ultraviolet UV emission band and another in the green region. The intensity of the UV peak remains the same while the intensity of the visible peak increases with increase in annealing temperature. The role of oxygen in ZnO thin films during the annealing process is important to the change in optical properties. The mechanism of the luminescence suggests that UV luminescence of ZnO thin films is related to the transition from conduction band edge to valence band, and green luminescence is caused by the transition from deep donor level to valence band due to oxygen vacancies. The NLO response of these samples is studied using nanosecond laser pulses at off-resonance wavelengths. The nonlinear absorption coefficient increases from 2.9 ×10−6 to 1.0 ×10−4 m/W when the annealing temperature is increased from 300 to 1050 °C, mainly due to the enhancement of interfacial state and exciton oscillator strength. The third order optical susceptibility x(3) increases with increase in annealing temperature (T) within the range of our investigations. In the weak confinement regime, T2.4 dependence of x(3) is obtained for ZnO thin films. The role of annealing temperature on the optical limiting response is also studied.

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Photoconductivity (PC) processes may be the most suitable technique for obtaining information about the states in the gap. It finds applications in photovoItaics, photo detection and radiation measurements. The main task in the area of photovoltaics, is to increase the efficiency of the device and also to develop new materials with good optoelectronic properties useful for energy conversion, keeping the idea of cost effectiveness. Photoconduction includes generation and recombination of carriers and their transport to the electrodes. So thermal relaxation process, charge carrier statistics, effects of electrodes and several mechanisms of recombination are involved in photoconductivity.A major effect of trapping is to make the experimentally observed decay time of photocurrent, longer than carrier lifetime. If no trapping centers are present, then observed photocurrent will decay in the same way as the density of free carriers and the observed decay time will be equal to carrier lifetime. If the density of free carriers is much less than density of trapped carriers, the entire decay of photocurrent is effectively dominated by the rate of trap emptying rather than by the rate of recombination.In the present study, the decay time of carriers was measured using photoconductive decay (PCD) technique. For the measurements, the film was loaded in a liquid Helium cryostat and the temperature was controlled using Lakshore Auto tuning temperature controller (Model 321). White light was used to illuminate the required area of the sample. Heat radiation from the light source was avoided by passing the light beam through a water filter. The decay current. after switching off the illumination. was measured using a Kiethely 2000 multi meter. Sets of PCD measurements were taken varying sample temperature, sample preparation temperature, thickness of the film, partial pressure of Oxygen and concentration of a particular element in a compound. Decay times were calculated using the rate window technique, which is a decay sampling technique particularly suited to computerized analysis. For PCD curves with two well-defined regions, two windows were chosen, one at the fast decay region and the other at the slow decay region. The curves in a particular window were exponentially fitted using Microsoft Excel 2000 programme. These decay times were plotted against sample temperature and sample preparation temperature to study the effect of various defects in the film. These studies were done in order to optimize conditions of preparation technique so as to get good photosensitive samples. useful for photovoltaic applications.Materials selected for the study were CdS, In2Se3, CuIn2Se3 and CuInS2• Photoconductivity studies done on these samples are organised in six chapters including introduction and conclusion.

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Photothermal effect refers to heating of a sample due to the absorption of electromagnetic radiation. Photothermal (PT) heat generation which is an example of energy conversion has in general three kinds of applications. 1. PT material probing 2. PT material processing and 3. PT material destruction. The temperatures involved increases from 1-. 3. Of the above three, PT material probing is the most important in making significant contribution to the field of science and technology. Photothermal material characterization relies on high sensitivity detection techniques to monitor the effects caused by PT material heating of a sample. Photothermal method is a powerful high sensitivity non-contact tool used for non-destructive thermal characterization of materials. The high sensitivity of the photothermal methods has led to its application for analysis of low absorbance samples. Laser calorimetry, photothermal radiometry, pyroelectric technique, photoacoustic technique, photothermal beam deflection technique, etc. come under the broad class ofphotothermal techniques. However the choice of a suitable technique depends upon the nature of the sample, purpose of measurement, nature of light source used, etc. The present investigations are done on polymer thin films employing photothermal beam deflection technique, for the successful determination of their thermal diffusivity. Here the sample is excited by a He-Ne laser (A = 6328...\ ) which acts as the pump beam. Due to the refractive index gradient established in the sample surface and in the adjacent coupling medium, another optical beam called probe beam (diode laser, A= 6500A ) when passed through this region experiences a deflection and is detected using a position sensitive detector and its output is fed to a lock-in amplifier from which the amplitude and phase of the deflection can be directly obtained. The amplitude and phase of the signal is suitably analysed for determining the thermal diffusivity.The production of polymer thin film samples has gained considerable attention for the past few years. Plasma polymerization is an inexpensive tool for fabricating organic thin films. It refers to formation of polymeric materials under the influence of plasma, which is generated by some kind of electric discharge. Here plasma of the monomer vapour is generated by employing radio frequency (MHz) techniques. Plasma polymerization technique results in homogeneous, highly adhesive, thermally stable, pinhole free, dielectric, highly branched and cross-linked polymer films. The possible linkage in the formation of the polymers is suggested by comparing the FTIR spectra of the monomer and the polymer.Near IR overtone investigations on some organic molecules using local mode model are also done. Higher vibrational overtones often provide spectral simplification and greater resolution of peaks corresponding to nonequivalent X-H bonds where X is typically C, N or O. Vibrational overtone spectroscopy of molecules containing X-H oscillators is now a well established tool for molecular investigations. Conformational and steric differences between bonds and structural inequivalence ofCH bonds (methyl, aryl, acetylenic, etc.) are resolvable in the higher overtone spectra. The local mode model in which the X-H oscillators are considered to be loosely coupled anharmonic oscillators has been widely used for the interpretation of overtone spectra. If we are exciting a single local oscillator from the vibrational ground state to the vibrational state v, then the transition energy of the local mode overtone is given by .:lE a......v = A v + B v2 • A plot of .:lE / v versus v will yield A, the local mode frequency as the intercept and B, the local mode diagonal anharmonicity as the slope. Here A - B gives the mechanical frequency XI of the oscillator and B = X2 is the anharmonicity of the bond. The local mode parameters XI and X2 vary for non-equivalent X-H bonds and are sensitive to the inter and intra molecular environment of the X-H oscillator.

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A novel fibre optic sensor for the in situ measurement of the rate of deposition of thin films has been developed. Evanescent wave in the uncladded portion of a multimode fibre is utilised for this sensor development. In the present paper we demonstrate how this sensor is useful for the monitoring of the deposition rate of polypyrrole thin films, deposited by an AC plasma polymerisation method. This technique is simple, accurate and highly sensitive compared with existing techniques.

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Optical absorption studies of free base and rare earth incorporated phthalocyanine doped borate glass matrix are reported for the first lime. The absorption spectra recorded in the UV- VIS region show two well defined absorption bands of phthalocyanine (Pc) molecule, namely the Soret band (B) and the Q band. The Q band always shows its characteristic splitting in all the doped glass matrices and the intensities of these components are found to vary from one Pc to another. Some of the important optical parameters, namely optical absorption coefficient (a), molar extinction coefficient (ε), absorption cross section (σa), oscillator strength (f), electric dipole strength (q2), absorption half bandwidth (Δλ) of the principal optical transitions have also been evaluated. Moreover, the spectral dependence of refractive index (n) and thereby the optical dielectric constant (ε) on wavelength yielded values of carrier concentration to effective mass ratio (N/m*) of the phthalocyanine molecule in the present glassy systems. Optical band gap (Eg) and width of the band tail (Et) are computed and their variations among the prepared samples are also discussed.

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An open cell photoacoustic (PA) configuration has been employed to evaluate the thermal diffusivity of intrinsic InP as well as InP doped with tin and iron. Thermal diffusivity data have been evaluated from variation of phase of PA signal as a function of modulation frequency. In doped samples, we observe a reduced value for thermal diffusivity in comparison with intrinsic InP. We also observed that, while the phase of the PA signal varies linearly with the square root of chopping frequency for doped samples, the intrinsic material does not exhibit such behaviour in the experimental frequency range. These results have been interpreted in terms of the heat generation and phonon assisted heat diffusion mechanisms in semiconductors.