Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.

Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots

The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally. Such a barrier has been predicted by previous theories. From the deep-level transient spectroscopy (DLTS) measurements, we have obtained the electron and hole energy levels of quantum dots E-e(QD-->GaAs) = 0.13 eV and E-h(QD-->GaAs) = 0.09 eV relative to the bulk unstrained GaAs band edges E-c and E-v. DLTS measurements have also provided evidence to the existence of the capture barriers of quantum dots for electron E-eB = 0.30 eV and hole E-hB = 0.26 eV. The barriers can be explained by the apexes appearing in the interface between InAs and GaAs caused by strain. Combining the photoluminescence results, the band structures of InAs and GaAs have been determined.

Structural and photoelectric studies on double barrier quantum well infrared detectors

GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making 3-5 um photovoltaic infrared (IR) detectors with a peak detectivity of 5 x 10(11) cm Hz(1/2)/W at 80 K. Double crystal X-ray diffraction is combined with synchrotron radiation X-ray analysis to determine successfully the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spectra of the linear array of the detectors are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region. The spectral response of the IR photocurrent of the devices is also measured and compared with the temperature dependent IR absorption of the DBQW samples in order to get a better understanding of the bias-controlled optical and transport behavior of the detector photoresponse and thus to optimize the detector performance. (C) 1999 Elsevier Science Ltd. All rights reserved.

Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D

We have developed a novel InP-based, ridge-waveguide photonic integrated circuit (PIC), which consists of a 1.1-um wavelength Y-branch optical waveguide with low loss and improved far field pattern and a 1.3-um wavelength strained InGaAsP-InP multiple quantum-well superluminescent diode, with bundle integrated guide (BIG) as the scheme for monolithic integration. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10 mW at 120 mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than I dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x8 degrees, resulting in good fiber coupling. The compactness, simplicity in fabrication, good superluminescent performance, low transmission loss and estimated low coupling loss prove the BIG and Y-branch method to be a feasible way for integration and make the photonic integrated circuit of Y-branch and superluminescent diode an promising candidate for transmitter and transceiver used in fiber optic gyroscope.

Growth and characterization of 4H-SiC by horizontal hot-wall CVD

4H-SiC layers have been homoepitaxially grown at 1500 degrees C with the use of a horizontal hot-wall chemical vapor deposition (CVD) system, which was built in the author's group. The typical growth rate was 2 mu m/h at a pressure of 40 Torr. The background donor concentration has been reduced to 2.3 x 10(15) cm(-3) during a prolonged growth run. It confirmed the idea that the high background concentration of thin films was caused by the impurities inside the susceptor and thermal insulator The FWHM of x-ray co-rocking curves show 9 similar to 15 aresecs in five different areas of a 32-mu m-thick 4H-SiC epilayer The free exciton peaks dominated in the near-band-edge low-temperature photoluminescence spectrum (LTPL), indicating high crystal quality.

Effect of a step quantum well structure and an electric-field on the Rashba spin splitting

Spin splitting of conduction subbands in Al_(0.3)Ga_(0.7)As/GaAs/Al_xGa_(1-x)As/Al_(0.3)Ga_(0.7)As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference. The dependence of the spin splitting on the electric field and the well structure, which is controlled by the well width and the step width, is investigated in detail. Without an external electric field, the spin splitting is induced by an in terface related Rashba term due to the built-in structure inversion asymmetry. Applying the external electric field to the step QW, the Rashba effect can be enhanced or weakened, depending on the well structure as well as the direction and the magnitude of the electric field. The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field, and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.

High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD

The high temperature (300～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabricated by low-pressure chemical vapor deposition on Si (100) substrates are investigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage characteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data measured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.

Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.

Structural and photoelectric studies on double barrier quantum well infrared detectors

GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3 similar to 5 mu m photovoltaic infrared (IR) detectors with a peak detectivity of 5x10(11) cmHz(1/2)/W at 80K. The double crystal x-ray diffraction is combined with synchrotron radiation x-ray analysis to determine the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spect ra of the DBQW sample and the spectral response of the IR photocurrent of the devices are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region.

Experiments and modification on electron cyclotron resonance ion sources at the Institute of Modern Physics

Uranium ion beams were produced from electron cyclotron resonance (ECR) ion sources by sputtering method this year at the Institute of Modern Physics. At first, we chose the Lanzhou ECR No. 3 ion source to implement the production experiment of U ion beams. Finally, 11 e mu A of U28+, 5 e mu A of U32+, and 1.5 e mu A of U35+ were obtained. A U26+ ion beam produced by the LECR2 ion source was accelerated successfully by the cyclotron. This means that the Heavy Ion Research Facility in Lanzhou (HIRFL) has accomplished the acceleration of the ion beam of the heaviest element according to the designed parameters. The Lanzhou ECR ion source No. 2 (LECR2), which was built in 1997, has served the HIRFL for eight years and needed to be upgraded to provide more intense high charge state ion beams for HIRFL cooling storage ring. We started the upgrading project of LECR2 last year, and the modified design just has been finished. (c) 2006 American Institute of Physics.

Ordered pattern formation from dewetting of polymer thin film with surface disturbance by capillary force lithography

The dewetting process of thin polystyrene (PS) film with built-in ordered disturbance by capillary force lithography (CFL) has. been investigated in situ by AFM. Two different phenomena are observed depending on the excess surface energy (DeltaF(gamma)) of the system. When DeltaF(gamma) is less than a certain critical value (i.e., the disturbance amplitude is under a critical value), the PS film would be flattened and become stable finally by heating above T-g. While, if the size of the disturbance amplitude is larger than the critical value, ordered PS liquid droplets form by further dewetting. The pattern formation mechanisms and influencing factors have been discussed in detail.

Physical modeling of localized scour for the Yangtze Estuary Waterway Improvement Project, Phase I

In order to examine the effectiveness of engineering protection against localized scour in front of the south groin-group of the Yangtze Estuary Waterway Improvement Project, Phase I, an undistorted physical model on a geometric scale of 1:250 is built in this study, covering two groins and their adacent estuarine areas. By use of rinsing fix-bed model as well as localized mobile-bed model the experiment is undertaken under bi-directional steady flow. According to the experimental results, waterway dredging leads to the increase in steram velocity, the increase being larger during the ebb than during the flood. Construction of the upstream groin has some influence on the flow patterns near the downstream groin. Localized scour in front of the groin-heads is controlled mainly by ebb flow. In the case of a riverbed composed entirely of silt, the depths of localized scour in front of the two groin-heads are 27 m and 29 m, respectively. In reality, the underneath sediment of the prototype riverbed is clay whose threshold velocity is much higher than the stream velocity in the Yangtze Estuary; therefore, the depths of localized scour will not be much larger than the thickness of the silt layer, i. e. 7.4 m and 4.7 m, respectively. The designed aprons covering the riverbed in fron of the groin-heads are very effective in scour control. Aprons of slightly smaller size can also fulfill the task of protection, but the area of localized scour increases significantly.

Characterization of degQ(Vh), a serine protease and a protective immunogen from a pathogenic Vibrio harveyi strain

Vibrio harveyi is an important marine pathogen that can infect a number of aquaculture species. V. harveyi degQ (degQ(Vh)), the gene encoding a DegQ homologue, was cloned from T4, a pathogenic V. harveyi strain isolated from diseased fish. DegQ(Vh) was closely related to the HtrA family members identified in other Vibrio species and could complement the temperature-sensitive phenotype of an Escherichia coli strain defective in degP. Expression of degQVh in T4 was modulated by temperature, possibly through the sigma(E)-like factor. Enzymatic analyses demonstrated that the recombinant DegQVh protein expressed in and purified from E. coli was an active serine protease whose activity required the integrity of the catalytic site and the PDZ domains. The optimal temperature and pH of the recombinant DegQVh protein were 50 C and pH 8.0. A vaccination study indicated that the purified recombinant DegQVh was a protective immunogen that could confer protection upon fish against infection by V. harveyi. In order to improve the efficiency of DegQVh as a vaccine, a genetic construct in the form of the plasmid pAQ1 was built, in which the DNA encoding the processed DegQVh protein was fused with the DNA encoding the secretion region of AgaV, an extracellular beta-agarase. The E.coli strain harboring pAQ1 could express and secrete the chimeric DegQVh protein into the culture supernatant. Vaccination of fish with viable E. coli expressing chimeric degQ(Vh) significantly (P < 0.001) enhanced the survival of fish against V. harveyi challenge, which was possibly due to the relatively prolonged exposure of the immune system to the recombinant antigen produced constitutively, albeit at a gradually decreasing level, by the carrier strain.

Characterization of degQ(Vh), a serine protease and a protective immunogen from a pathogenic Vibrio harveyi strain

Vibrio harveyi is an important marine pathogen that can infect a number of aquaculture species. V. harveyi degQ (degQ(Vh)), the gene encoding a DegQ homologue, was cloned from T4, a pathogenic V. harveyi strain isolated from diseased fish. DegQ(Vh) was closely related to the HtrA family members identified in other Vibrio species and could complement the temperature-sensitive phenotype of an Escherichia coli strain defective in degP. Expression of degQVh in T4 was modulated by temperature, possibly through the sigma(E)-like factor. Enzymatic analyses demonstrated that the recombinant DegQVh protein expressed in and purified from E. coli was an active serine protease whose activity required the integrity of the catalytic site and the PDZ domains. The optimal temperature and pH of the recombinant DegQVh protein were 50 C and pH 8.0. A vaccination study indicated that the purified recombinant DegQVh was a protective immunogen that could confer protection upon fish against infection by V. harveyi. In order to improve the efficiency of DegQVh as a vaccine, a genetic construct in the form of the plasmid pAQ1 was built, in which the DNA encoding the processed DegQVh protein was fused with the DNA encoding the secretion region of AgaV, an extracellular beta-agarase. The E.coli strain harboring pAQ1 could express and secrete the chimeric DegQVh protein into the culture supernatant. Vaccination of fish with viable E. coli expressing chimeric degQ(Vh) significantly (P < 0.001) enhanced the survival of fish against V. harveyi challenge, which was possibly due to the relatively prolonged exposure of the immune system to the recombinant antigen produced constitutively, albeit at a gradually decreasing level, by the carrier strain.

一种平面运动位姿的并联组合测量方法研究

基于特殊的测量环境需要,提出了用于平面运动位姿测量的并联组合测量方法。介绍了并联组合测量方法的测量机构组成和测量原理,并进行了可行性论证;通过建立误差模型,对几何误差源与原始测量参数的映射关系及其对最终位姿测量误差的影响进行了分析,仿真结果和实际应用测量数据验证了分析的正确性。所述并联组合测量方法构思新颖,结构合理,适用于具有一定特殊测量条件的高精度平面大范围运动过程位姿测量。如果在工程应用中有效地控制几何误差源的影响,该方法则具有一定的推广应用价值。