Engineering properties of alkali-activated natural pozzolan concrete

The development of alkali-activated binders with superior engineering properties and longer durability has emerged as an alternative to ordinary portland cement (OPC). It is possible to use alkali-activated natural pozzolans to prepare environmentally friendly geopolymer cement leading to the concept of sustainable development. This paper presents a summary of an experimental work that was conducted to determine mechanical strength, modulus of elasticity, ultrasonic pulse velocity, and shrinkage of different concrete mixtures prepared with alkali-activated Iranian natural pozzolans—namely Taftan andesite and Shahindej dacite, both with and without calcining. Test data were used for Taftan pozzolan to identify the effects of water-binder ratios (w/b) and curing conditions on the properties of the geopolymer concrete, whereas the influence of material composition was studied by activating Shahindej pozzolan both in the natural and calcined states. The results show that alkali-activated natural pozzolan (AANP) concretes develop moderate-to-high mechanical strength with a high modulus of elasticity and a shrinkage much lower than with OPC.

Design and Flux-Weakening Control of an Interior Permanent Magnet Synchronous Motor for Electric Vehicles

Permanent magnet synchronous motors (PMSMs) provide a competitive technology for EV traction drives owing to their high power density and high efficiency. In this paper, three types of interior PMSMs with different PM arrangements are modeled by the finite element method (FEM). For a given amount of permanent magnet materials, the V-shape interior PMSM is found better than the U-shape and the conventional rotor topologies for EV traction drives. Then the V-shape interior PMSM is further analyzed with the effects of stator slot opening and the permanent magnet pole chamfering on cogging torque and output torque performance. A vector-controlled flux-weakening method is developed and simulated in Matlab to expand the motor speed range for EV drive system. The results show good dynamic and steady-state performance with a capability of expanding speed up to four times of the rated. A prototype of the V-shape interior PMSM is also manufactured and tested to validate the numerical models built by the FEM.

Tailoring Magnetic, Mechanical and Dielectric Properties of Magnetorheological Elastomers based on Natural Rubber and Iron by Magnetic Field Assisted Curing for Possible Applications

If magnetism is universal in nature, magnetic materials are ubiquitous. A life without magnetism is unthinkable and a day without the influence of a magnetic material is unimaginable. They find innumerable applications in the form of many passive and active devices namely, compass, electric motor, generator, microphone, loud speaker, maglev train, magnetic resonance imaging, data recording and reading, hadron collider etc. The list is endless. Such is the influence of magnetism and magnetic materials in ones day to day life. With the advent of nanoscience and nanotechnology, along with the emergence of new areas/fields such as spintronics, multiferroics and magnetic refrigeration, the importance of magnetism is ever increasing and attracting the attention of researchers worldwide. The search for a fluid which exhibits magnetism has been on for quite some time. However nature has not bestowed us with a magnetic fluid and hence it has been the dream of many researchers to synthesize a magnetic fluid which is thought to revolutionize many applications based on magnetism. The discovery of a magnetic fluid by Jacob Rabinow in the year 1952 paved the way for a new branch of Physics/Engineering which later became magnetic fluids. This gave birth to a new class of material called magnetorheological materials. Magnetorheological materials are considered superior to electrorheological materials in that magnetorheology is a contactless operation and often inexpensive.Most of the studies in the past on magnetorheological materials were based on magnetic fluids. Recently the focus has been on the solid state analogue of magnetic fluids which are called Magnetorheological Elastomers (MREs). The very word magnetorheological elastomer implies that the rheological properties of these materials can be altered by the influence of an external applied magnetic field and this process is reversible. If the application of an external magnetic field modifies the viscosity of a magnetic fluid, the effect of external magnetic stimuli on a magnetorheological elastomer is in the modification of its stiffness. They are reversible too. Magnetorheological materials exhibit variable stiffness and find applications in adaptive structures of aerospace, automotive civil and electrical engineering applications. The major advantage of MRE is that the particles are not able to settle with time and hence there is no need of a vessel to hold it. The possibility of hazardous waste leakage is no more with a solid MRE. Moreover, the particles in a solid MRE will not affect the performance and durability of the equipment. Usually MR solids work only in the pre yield region while MR fluids, typically work in the post yield state. The application of an external magnetic field modifies the stiffness constant, shear modulus and loss modulus which are complex quantities. In viscoelastic materials a part of the input energy is stored and released during each cycle and a part is dissipated as heat. The storage modulus G′ represents the capacity of the material to store energy of deformation, which contribute to material stiffness. The loss modulusG′′ represents the ability of the material to dissipate the energy of deformation. Such materials can find applications in the form of adaptive vibration absorbers (ATVAs), stiffness tunable mounts and variable impedance surfaces. MREs are an important material for automobile giants and became the focus of this research for eventual automatic vibration control, sound isolation, brakes, clutches and suspension systems

Extending the capabilities of smartphone sensors for applications in interaction and health

Thesis (Ph.D.)--University of Washington, 2016-08

Design and Fabrication of Perovskite Micro-Cavity Lasers

Thesis (Master's)--University of Washington, 2016-08

Synthesis and Characterization of Nanostructured Electro-active Materials

Thesis (Ph.D.)--University of Washington, 2016-08

A touchless passive Infrared gesture sensor.

A sensing device for a touchless, hand gesture, user interface based on an inexpensive passive infrared pyroelectric detector array is presented. The 2 x 2 element sensor responds to changing infrared radiation generated by hand movement over the array. The sensing range is from a few millimetres to tens of centimetres. The low power consumption (< 50 μW) enables the sensor’s use in mobile devices and in low energy applications. Detection rates of 77% have been demonstrated using a prototype system that differentiates the four main hand motion trajectories – up, down, left and right. This device allows greater non-contact control capability without an increase in size, cost or power consumption over existing on/off devices.

CFAR Adaptive PN Code acquisition for DSSS Systems.

Constant false alarm rate (CFAR) techniques can be used in Pseudo-Noise (PN) code acquisition in Spread Spectrum (SS) communication systems, and all the CFAR techniques perform well in homogeneous background PN code acquisition. However, in non-homogeneous background, some CFAR techniques suffer rapid degradation. GO/SO (Greatest-of/Smallest-of) CFAR and adaptive censored mean level detector (ACMLD) are two adaptive CFAR techniques, which are analyzed and compared with other CFAR techniques. The simulation results show that GO/SO CFAR is superior to other CFAR techniques, it maintains short mean acquisition time (MAT) even at environment with strong clutter noise, and ACMLD is suitable for background with strong interfering targets

ENABLING HARDWARE TECHNOLOGIES FOR AUTONOMY IN TINY ROBOTS: CONTROL, INTEGRATION, ACTUATION

The last two decades have seen many exciting examples of tiny robots from a few cm3 to less than one cm3. Although individually limited, a large group of these robots has the potential to work cooperatively and accomplish complex tasks. Two examples from nature that exhibit this type of cooperation are ant and bee colonies. They have the potential to assist in applications like search and rescue, military scouting, infrastructure and equipment monitoring, nano-manufacture, and possibly medicine. Most of these applications require the high level of autonomy that has been demonstrated by large robotic platforms, such as the iRobot and Honda ASIMO. However, when robot size shrinks down, current approaches to achieve the necessary functions are no longer valid. This work focused on challenges associated with the electronics and fabrication. We addressed three major technical hurdles inherent to current approaches: 1) difficulty of compact integration; 2) need for real-time and power-efficient computations; 3) unavailability of commercial tiny actuators and motion mechanisms. The aim of this work was to provide enabling hardware technologies to achieve autonomy in tiny robots. We proposed a decentralized application-specific integrated circuit (ASIC) where each component is responsible for its own operation and autonomy to the greatest extent possible. The ASIC consists of electronics modules for the fundamental functions required to fulfill the desired autonomy: actuation, control, power supply, and sensing. The actuators and mechanisms could potentially be post-fabricated on the ASIC directly. This design makes for a modular architecture. The following components were shown to work in physical implementations or simulations: 1) a tunable motion controller for ultralow frequency actuation; 2) a nonvolatile memory and programming circuit to achieve automatic and one-time programming; 3) a high-voltage circuit with the highest reported breakdown voltage in standard 0.5 μm CMOS; 4) thermal actuators fabricated using CMOS compatible process; 5) a low-power mixed-signal computational architecture for robotic dynamics simulator; 6) a frequency-boost technique to achieve low jitter in ring oscillators. These contributions will be generally enabling for other systems with strict size and power constraints such as wireless sensor nodes.

Experiences of African American male engineering students: a qualitative analysis

Prior to the 1970s, African Americans were essentially invisible in the science and engineering academic and professional communities (Babco, 2001a). The few who did earn degrees in these fields, obtained them primarily from historically Black colleges and universities (HBCUs), and these institutions also served as the primary employer for these graduates in science and engineering (Hines, 1997; Babco, 2001a, 2001b). Since the 1970s, African Americans have made considerable progress, but still are not on a level playing field with White males in terms of opportunities for preparation of science and engineering careers or for employment and advancement in those careers. The purpose of this study was to explore second and third-year African American male engineering students’ perceptions and examine what experiences have contributed to their access to and persistence in engineering. A qualitative research design was employed to gather data necessary to answer the research questions. Eight second and third-year African American male engineering students from Research University (pseudonym) participated in interviews with the researcher. The data from the interviews was used to consider the themes that emerged from the participants. The findings from this study suggest that African American male engineering students at Research University have specific experiences that influence their persistence and academic achievement. Themes identified from the interview data include: (1) pre-college experiences; (2) participation in academic and social networks; (3) institutional programming and organizational support; (4) personal accountability and motivation; and (5) goals outside of engineering. As a result of this research, several future implications are highlighted. These include acknowledging the value of diversity, continued support through organizations, and increased knowledge of best practices.

A III-V channel field effect transistor for non-classical CMOS: process optimisation for improved gate stack function

This thesis describes a collection of studies into the electrical response of a III-V MOS stack comprising metal/GaGdO/GaAs layers as a function of fabrication process variables and the findings of those studies. As a result of this work, areas of improvement in the gate process module of a III-V heterostructure MOSFET were identified. Compared to traditional bulk silicon MOSFET design, one featuring a III-V channel heterostructure with a high-dielectric-constant oxide as the gate insulator provides numerous benefits, for example: the insulator can be made thicker for the same capacitance, the operating voltage can be made lower for the same current output, and improved output characteristics can be achieved without reducing the channel length further. It is known that transistors composed of III-V materials are most susceptible to damage induced by radiation and plasma processing. These devices utilise sub-10 nm gate dielectric films, which are prone to contamination, degradation and damage. Therefore, throughout the course of this work, process damage and contamination issues, as well as various techniques to mitigate or prevent those have been investigated through comparative studies of III-V MOS capacitors and transistors comprising various forms of metal gates, various thicknesses of GaGdO dielectric, and a number of GaAs-based semiconductor layer structures. Transistors which were fabricated before this work commenced, showed problems with threshold voltage control. Specifically, MOSFETs designed for normally-off (VTH > 0) operation exhibited below-zero threshold voltages. With the results obtained during this work, it was possible to gain an understanding of why the transistor threshold voltage shifts as the gate length decreases and of what pulls the threshold voltage downwards preventing normally-off device operation. Two main culprits for the negative VTH shift were found. The first was radiation damage induced by the gate metal deposition process, which can be prevented by slowing down the deposition rate. The second was the layer of gold added on top of platinum in the gate metal stack which reduces the effective work function of the whole gate due to its electronegativity properties. Since the device was designed for a platinum-only gate, this could explain the below zero VTH. This could be prevented either by using a platinum-only gate, or by matching the layer structure design and the actual gate metal used for the future devices. Post-metallisation thermal anneal was shown to mitigate both these effects. However, if post-metallisation annealing is used, care should be taken to ensure it is performed before the ohmic contacts are formed as the thermal treatment was shown to degrade the source/drain contacts. In addition, the programme of studies this thesis describes, also found that if the gate contact is deposited before the source/drain contacts, it causes a shift in threshold voltage towards negative values as the gate length decreases, because the ohmic contact anneal process affects the properties of the underlying material differently depending on whether it is covered with the gate metal or not. In terms of surface contamination; this work found that it causes device-to-device parameter variation, and a plasma clean is therefore essential. This work also demonstrated that the parasitic capacitances in the system, namely the contact periphery dependent gate-ohmic capacitance, plays a significant role in the total gate capacitance. This is true to such an extent that reducing the distance between the gate and the source/drain ohmic contacts in the device would help with shifting the threshold voltages closely towards the designed values. The findings made available by the collection of experiments performed for this work have two major applications. Firstly, these findings provide useful data in the study of the possible phenomena taking place inside the metal/GaGdO/GaAs layers and interfaces as the result of chemical processes applied to it. In addition, these findings allow recommendations as to how to best approach fabrication of devices utilising these layers.