Effect of current stressing on the reliability of 63Sn37Pb solder joints

The effect of current stressing on the reliability of 63Sn37Pb solder joints with Cu pads was investigated at temperatures of −5 °C and 125 °C up to 600 h. The samples were stressed with 3 A current (6.0 × 102 A/cm2 in the solder joint with diameter of 800 μm and 1.7 × 104 A/cm2 in the Cu trace with cross section area of 35 × 500 μm). The temperatures of the samples and interfacial reaction within the solder joints were examined. The microstructural change of the solder joints aged at 125 °C without current flow was also evaluated for comparison. It was confirmed that the current flow could cause the temperature of solder joints to rise rapidly and remarkably due to accumulation of massive Joule heat generated by the Cu trace. The solder joints stressed at 125 °C with 3 A current had an extensive growth of Cu6Sn5 and Cu3Sn intermetallic compounds (IMC) at both top and bottom solder-to-pad interfaces. It was a direct result of accelerated aging rather than an electromigration or thermomigration effect in this experiment. The kinetic is believed to be bulk diffusion controlled solid-state reaction, irrespective of the electron flow direction. When stressed at −5 °C with 3 A current, no significant change in microstructure and composition of the solder joints had occurred due to a very low diffusivity of the atoms as most Joule heat was eliminated at low temperature. The IMC evolution of the solder joints aged at 125 °C exhibited a subparabolic growth behavior, which is presumed to be a combined mechanism of grain boundary diffusion and bulk diffusion. This is mainly ascribed to the retardant effect against the diffusion course by the sufficiently thick IMC layer that was initially formed during the reflow soldering.

Valorização de resíduos industriais na formulação de produtos e pigmentos cerâmicos: processamento e desenvolvimento de cor

A valorização de diferentes resíduos industriais provenientes dosector de tratamento/revestimento de superfícies metálicas pode ser obtida utilizando-os como matérias-primas na formulação de pigmentos cerâmicos, sintetizados pelo método cerâmico convencional. Neste trabalho avaliou-se a viabilidade de incorporar lamas geradas pelos processos de (i) anodização, ricas em alumínio, (ii) de niquelagem e cromagem de torneiras, usadas como fonte de níquel e crómio, e (iii) da decapagem química de aços de uma trefilaria, ricas em ferro, utilizadas por si só, ou em conjunto com matérias-primas comerciais, para a obtenção depigmentos cerâmicos que coram, de forma estável, diversas matrizes cerâmicas e vítreas. Esta solução assegura ainda a inertização de potenciaisespécies perigosas presentes nos resíduos, resultando produtos inócuospara a saúde pública. Procedeu-se à caracterização de cada resíduo, em termos de composição química e mineralógica, comportamento térmico, grau de toxicidade, distribuição granulométrica, teor de humidade, etc. Verificou-se a constância das características das lamas, recorrendo à análise de lotes recolhidos em momentos distintos. Os resíduos são essencialmente constituídos por hidróxidos metálicos e foram utilizados após secagem e desagregação. No entanto, a lama de anodização de alumínio sofreu um tratamento térmico suplementar a 1400ºC. O método de síntese dos pigmentos englobou as seguintes etapas: (i) doseamento; (ii) homogeneização; (iii) calcinação; (iv) lavagem e moagem.Procedeu-se à caracterização dos pigmentos, avaliando a cor por espectroscopia de reflectância difusae pelo método CIELAB e determinando as características físico-químicas relevantes. Posteriormente, testou-se o seu desempenho em produtos cerâmicos distintos (corpos e vidrados), aferindo o desempenho cromático e a estabilidade. Numa primeira fase, desenvolveram-se e caracterizaram-se tipos distintos de pigmentos: (i) com base na estrutura do corundo (ii) verde Victória deuvarovite (iii) violeta de cassiterite com crómio (iv) pigmento carmim de malaiaíte; (v)pretos e castanhos com base na estrutura da espinela. Aprofundaram-se depois os estudos do pigmento carmim de malaiaítee do pigmento preto com base na estrutura da espinela. O pigmento carmim de malaiaíte, CaSnSiO5:Cr2O3, é formulado coma lama gerada no processo de niquelagem e cromagem. Avaliou-se a influência do teor de lama na temperatura de síntese e na qualidade cromática, em comparação com um pigmento formulado com reagentes puros. O pigmento preto com estrutura de espinela de níquel, crómio e ferro, foii formulado exclusivamente a partir das lamas geradas nos processos de cromagem/niquelagem e de decapagem química do aço. Avaliaram-se as características cromáticas e o grau de inertização dos elementos tóxicospresentes, em função da estequiometria e do tratamento térmico. Estudou-se ainda um novo sistema com base na estrutura da hibonite(CaAl12O19), que permite a obtenção de pigmentos azuis e que utiliza a lama de cromagem e niquelagem. As espécies cromóforas (Ni2+ ou Co2+) assumem coordenação tetraédrica quando substituem os iões Al3+ que ocupam as posições M5 da rede da hibonite. A formação simultânea de anortite permite reduzir a temperatura de síntese.Para além do carácter inovador deste pigmento de dissolução sólida, a qualidade cromática e a sua estabilidade são interessantes. Além disso, os teores de cobalto ou níquel são reduzidosrelativamente aos utilizados em formulações comerciais de pigmentos azuis, o que se traduz em importantes vantagens económicas e ambientais.

Preparação e caracterização de materiais com constante dieléctrica colossal baseados em CCTO

A procura de materiais com elevada constante dieléctrica (E’) motivou nos últimos anos uma intensa pesquisa neste domínio. Entre as várias aplicações destes materiais destacam-se os dispositivos de memória baseados em componentes capacitivos, como as DRAM, em que o valor da constante dieléctrica estática (Es) determina o seu nível de miniaturização. Entre estes materiais, o CaCu3Ti4O12 (CCTO) tem sido apontado como sendo bastante interessante na perspectiva das aplicações tecnológicas e do ponto de vista científico. O CCTO tem a estrutura da perovsquite, apresentando valores elevados de E’ e uma grande estabilidade numa vasta gama de temperaturas (100 – 400 K) e frequências (100 Hz – 1 MHz). Contudo, as elevadas perdas dieléctricas (tan ) têm sido um entrave à sua aplicação tecnológica. Neste trabalho foram preparados materiais derivados do CCTO pelos métodos de reacção do estado sólido, sol-gel e fusão de zona com laser, com o principal objectivo de optimizar as amostras preparadas ao nível estrutural e morfológico, de modo a reduzir tan e aumentar a gama de frequências na qual se verifique E’colossal. Do ponto de vista da sua caracterização estrutural e morfológica usaram-se técnicas de difracção de raios X, microscopia electrónica de varrimento, espectroscopia de dispersão de raios X e espectroscopia de Raman. Para a caracterização eléctrica foram medidas a condutividade ac e dc, a impedância complexa e E’ em função da temperatura e frequência. As medidas dieléctricas mostraram a existência de mecanismos de relaxação, que foram ajustados usando o modelo de Cole-Cole. Discutiu-se a correlação entre os parâmetros de relaxação obtidos e os resultados estruturais das amostras. Atendendo a que o mecanismo de polarização que está na origem das propriedades incomuns do CCTO ainda permanece em discussão, foram produzidas amostras com uma grande diversidade morfológica, variando as condições de síntese. Foram ainda dopadas amostras de CCTO com os óxidos TeO2 e GeO2. Constatou-se que a resposta dieléctrica das amostras de CCTO policristalinas é muito dependente do tamanho de grão. Em regra, verificou-se o aumento de Es e a diminuição da resistência dos grãos e fronteiras de grão com o aumento do tamanho de grão.

Persistent luminescence of SrAl2O4:Ce(III), Dy, Eu nanotubes, nanowires and core-shells for people with disabilities: nano-emergency

Este estudo transversal está focado na propriedade de luminescência persistente do aluminato de estrôncio co-dopado com cério (III), disprósio (III) e európio (II), SrAl2O4:Ce3+, Dy3+, Eu2+, em sistemas de sinalização de áreas de risco e emergências para pessoas com deficiências. Na área da ciência e engenharia dos materiais, foram desenvolvidos novos materiais com características nanométricas, nanotubos, nanoarames e nanobastões luminescentes de SrAl2O4:Ce3+, Dy3+, Eu2+ para aplicações na área da reabilitação e acessibilidade de pessoas com deficiências. Os nanotubos foram obtidos a partir de micro- e nano-partículas precursoras sintetizadas por reacção do estado-sólido e tratamento térmico de recozedura (1273-1473 K). Os nanoarames e nanobastões foram preparados por moagem, sonificação e recozedura (373 K). Novas nanocápsulas de aluminatos luminescentes dopados com cério (III) e encapsulados com TiO2 foram criadas de modo a obter-se materiais multifuncionais, designadamente com acção fotocatalítica antimicrobiana, antibacteriana e resistência à água. Tais aluminatos podem ser amplamente aplicados como superfícies higiénicas, auto-limpantes, em biomateriais, no domínio de medicamentos antibióticos, na formulação de vacinas, e com ênfase à aplicação em cerâmicas fotoluminescentes. As metodologias de obtenção de tais nanoestruturas de aluminato de estrôncio dopado com cério (III) e do seu encapsulamento, desenvolvidas no âmbito desta tese, são aplicáveis a diversos aluminatos dopados com outros iões lantanídeos (Ln consiste em La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb, Tm ou Lu) com a fórmula M(1-x-y)N2O4:Cex, Lny, onde M é Be, Mg, Ca, Sr ou Ba. Na área da oftalmologia, foi desenvolvido um equipamento médico para o diagnóstico de biofuncionalidade das células retinais fotoreceptoras, e como suporte à telemedicina oftalmológica. Este equipamento foi utilizado para realizar testes de visão cromática FM100HUE em fundo branco/preto para a personalização de materiais luminescentes. Os resultados demonstraram uma biofuncionalidade celular à visibilidade fotópica das cores em fundo preto superior no grupo de tratamento, composto por pessoas com retinopatia diabética (n=38), em comparação ao grupo de referência (n=38). Estes resultados sugerem a recomendação de materiais com fotoluminescência persistente (λem=485-555 nm), incluindo SrAl2O4:Ce3+, Dy3+, Eu2+, para o referido grupo de tratamento, em sinalização de emergência e em ambientes de baixa iluminação. Na área da arquitectura, foi proposta uma nova aplicação dos referidos nanomateriais luminescentes à base de SrAl2O4:Ce3+, Dy3+, Eu2+ em cerâmica de revestimento, tendo em vista a sua boa visibilidade e uso por pessoas com deficiências. Novos pavimentos, cerâmicos, fotoluminescentes, foram desenhados com propriedades multisensoriais (contraste táctil, sonoro e visual) e antimicrobianas, para pessoas portadoras de deficiências utilizarem, no escuro, com a prioridade de salvar vidas em emergências. Tais pisos, com relevos, podem ser combinados de modo a compor um sistema exclusivo de sinalização fotoluminescente multisensorial que possibilita a rápida evacuação mediante o uso de auxílios de mobilidade (e.g. bengala, cadeira de rodas, andadores, muletas). A solução integrada de tais inovações que potencializa a propriedade de luminescência persistente de SrAl2O4:Ce3+, Dy3+, Eu2+ de modo acessível para as pessoas com deficiências, pode contribuir para salvar vidas, no escuro, em emergências.

Ferroelectric : CNTs structures fabrication for advanced functional nano devices

This work is about the combination of functional ferroelectric oxides with Multiwall Carbon Nanotubes for microelectronic applications, as for example potential 3 Dimensional (3D) Non Volatile Ferroelectric Random Access Memories (NVFeRAM). Miniaturized electronics are ubiquitous now. The drive to downsize electronics has been spurred by needs of more performance into smaller packages at lower costs. But the trend of electronics miniaturization challenges board assembly materials, processes, and reliability. Semiconductor device and integrated circuit technology, coupled with its associated electronic packaging, forms the backbone of high-performance miniaturized electronic systems. However, as size decreases and functionalization increases in the modern electronics further size reduction is getting difficult; below a size limit the signal reliability and device performance deteriorate. Hence miniaturization of siliconbased electronics has limitations. On this background the Road Map for Semiconductor Industry (ITRS) suggests since 2011 alternative technologies, designated as More than Moore; being one of them based on carbon (carbon nanotubes (CNTs) and graphene) [1]. CNTs with their unique performance and three dimensionality at the nano-scale have been regarded as promising elements for miniaturized electronics [2]. CNTs are tubular in geometry and possess a unique set of properties, including ballistic electron transportation and a huge current caring capacity, which make them of great interest for future microelectronics [2]. Indeed CNTs might have a key role in the miniaturization of Non Volatile Ferroelectric Random Access Memories (NVFeRAM). Moving from a traditional two dimensional (2D) design (as is the case of thin films) to a 3D structure (based on a tridimensional arrangement of unidimensional structures) will result in the high reliability and sensing of the signals due to the large contribution from the bottom electrode. One way to achieve this 3D design is by using CNTs. Ferroelectrics (FE) are spontaneously polarized and can have high dielectric constants and interesting pyroelectric, piezoelectric, and electrooptic properties, being a key application of FE electronic memories. However, combining CNTs with FE functional oxides is challenging. It starts with materials compatibility, since crystallization temperature of FE and oxidation temperature of CNTs may overlap. In this case low temperature processing of FE is fundamental. Within this context in this work a systematic study on the fabrication of CNTs - FE structures using low cost low temperature methods was carried out. The FE under study are comprised of lead zirconate titanate (Pb1-xZrxTiO3, PZT), barium titanate (BaTiO3, BT) and bismuth ferrite (BiFeO3, BFO). The various aspects related to the fabrication, such as effect on thermal stability of MWCNTs, FE phase formation in presence of MWCNTs and interfaces between the CNTs/FE are addressed in this work. The ferroelectric response locally measured by Piezoresponse Force Microscopy (PFM) clearly evidenced that even at low processing temperatures FE on CNTs retain its ferroelectric nature. The work started by verifying the thermal decomposition behavior under different conditions of the multiwall CNTs (MWCNTs) used in this work. It was verified that purified MWCNTs are stable up to 420 ºC in air, as no weight loss occurs under non isothermal conditions, but morphology changes were observed for isothermal conditions at 400 ºC by Raman spectroscopy and Transmission Electron Microscopy (TEM). In oxygen-rich atmosphere MWCNTs started to oxidized at 200 ºC. However in argon-rich one and under a high heating rate MWCNTs remain stable up to 1300 ºC with a minimum sublimation. The activation energy for the decomposition of MWCNTs in air was calculated to lie between 80 and 108 kJ/mol. These results are relevant for the fabrication of MWCNTs – FE structures. Indeed we demonstrate that PZT can be deposited by sol gel at low temperatures on MWCNTs. And particularly interesting we prove that MWCNTs decrease the temperature and time for formation of PZT by ~100 ºC commensurate with a decrease in activation energy from 68±15 kJ/mol to 27±2 kJ/mol. As a consequence, monophasic PZT was obtained at 575 ºC for MWCNTs - PZT whereas for pure PZT traces of pyrochlore were still present at 650 ºC, where PZT phase formed due to homogeneous nucleation. The piezoelectric nature of MWCNTs - PZT synthesised at 500 ºC for 1 h was proved by PFM. In the continuation of this work we developed a low cost methodology of coating MWCNTs using a hybrid sol-gel / hydrothermal method. In this case the FE used as a proof of concept was BT. BT is a well-known lead free perovskite used in many microelectronic applications. However, synthesis by solid state reaction is typically performed around 1100 to 1300 ºC what jeopardizes the combination with MWCNTs. We also illustrate the ineffectiveness of conventional hydrothermal synthesis in this process due the formation of carbonates, namely BaCO3. The grown MWCNTs - BT structures are ferroelectric and exhibit an electromechanical response (15 pm/V). These results have broad implications since this strategy can also be extended to other compounds of materials with high crystallization temperatures. In addition the coverage of MWCNTs with FE can be optimized, in this case with non covalent functionalization of the tubes, namely with sodium dodecyl sulfate (SDS). MWCNTs were used as templates to grow, in this case single phase multiferroic BFO nanorods. This work shows that the use of nitric solvent results in severe damages of the MWCNTs layers that results in the early oxidation of the tubes during the annealing treatment. It was also observed that the use of nitric solvent results in the partial filling of MWCNTs with BFO due to the low surface tension (<119 mN/m) of the nitric solution. The opening of the caps and filling of the tubes occurs simultaneously during the refluxing step. Furthermore we verified that MWCNTs have a critical role in the fabrication of monophasic BFO; i.e. the oxidation of CNTs during the annealing process causes an oxygen deficient atmosphere that restrains the formation of Bi2O3 and monophasic BFO can be obtained. The morphology of the obtained BFO nano structures indicates that MWCNTs act as template to grow 1D structure of BFO. Magnetic measurements on these BFO nanostructures revealed a week ferromagnetic hysteresis loop with a coercive field of 956 Oe at 5 K. We also exploited the possible use of vertically-aligned multiwall carbon nanotubes (VA-MWCNTs) as bottom electrodes for microelectronics, for example for memory applications. As a proof of concept BiFeO3 (BFO) films were in-situ deposited on the surface of VA-MWCNTs by RF (Radio Frequency) magnetron sputtering. For in situ deposition temperature of 400 ºC and deposition time up to 2 h, BFO films cover the VA-MWCNTs and no damage occurs either in the film or MWCNTs. In spite of the macroscopic lossy polarization behaviour, the ferroelectric nature, domain structure and switching of these conformal BFO films was verified by PFM. A week ferromagnetic ordering loop was proved for BFO films on VA-MWCNTs having a coercive field of 700 Oe. Our systematic work is a significant step forward in the development of 3D memory cells; it clearly demonstrates that CNTs can be combined with FE oxides and can be used, for example, as the next 3D generation of FERAMs, not excluding however other different applications in microelectronics.

Photopyroelectric study of thermal properties and phase transitions in selected solids

This thesis presents in detail. the theoretical developments and calculations which are used for the simultaneous determination of thermal parameters, namely thermal diffusivity (a). thermal effusivity (e), thermal conductivity (K) and heat capacity (cr ) employing photopyroelectric technique. In our calculations. we have assumed that the pyroelectric detector is supported on a copper backing. so that there will be sufficient heat exchange between the heated pyroelectric detector and the backing so that the signal fluctuations are reduced to a minimum. Since the PPE signal depends on the properties of the detector that are also temperature dependent. a careful temperature calibration of the system need to be carried out. APPE cell has been fabricated for the measurements that can be used to measure the thermal properties of solid samples from ~ 90 K to ~ 350 K. The cell has been calibrated using standard samples and the accuracy of the technique is found to be of the order of± 1%.In this thesis, we have taken up work n photopyroelectric investigation of thermal parameters of ferroelectric crystals such as Glycine phosphite (NH3CH2COOH3P03), Triglycine sulfate and Thiourea as well as mixed valence perovskites samples such as Lead doped Lanthanum Manganate (Lal_xPb~Mn03) Calcium doped (Lal_xCaxMnOJ) and Nickel doped Lanthanum Stroncium Cobaltate (Lao~Sro5Ni,Col_x03).The three ferroelectric crystals are prepared by the slow evaporation technique and the mixed valence perovskites by solid state reaction technique.Mixed valence perovskites, with the general formula RI_xA~Mn03 (R = La. Nd or Pr and A = Ba, Ca, Sr or Pb) have been materials of intense experimental and theoretical studies over the past few years. These materials show . colossal magneloresis/ance' (CMR) in samples with 0.2 < x < 0.5 in such a doping region, resistivity exhibits a peak at T = T p' the metal - insulator transition temperature. The system exhibits metallic characteristics with d %T > Oabove Tp (wherep is the resistivity) and insulating characteristics with d % T < 0 above T p. Despite intensive investigations on the CMR phenomena and associated electrical properties. not much work has been done on the variation of thermal properties of these samples. We have been quite successful in finding out the nature of anomaly associated with thermal properties when the sample undergoes M-I transition.The ferroelectric crystal showing para-ferroelectric phase transitions - Glycine phosphite. Thiourea and Triglycine sulfate - are studied in detail in order to see how well the PPE technique enables one to measure the thermal parameters during phase transitions. It is seen that the phase transition gets clearly reflected in the variation of thermal parameters. The anisotropy in thermal transport along different crystallographic directions are explained in terms of the elastic anisotropy and lattice contribution to the thermal conductivity. Interesting new results have been obtained on the above samples and are presented in three different chapters of the thesis.In summary. we have carried investigations of the variations of the thermal parameters during phase transitions employing photopyroelectric technique. The results obtained on different systems are important not only in understanding the physics behind the transitions but also in establishing the potentiality of the PPE tool. The full potential of PPE technique for the investigation of optical and thermal properties of materials still remains to be taken advantage of by workers in this field.

Investigations on the Multiferroic and Thermoelectric properties of Low and Intermediate band width Manganites

This thesis lays importance in the investigation on the multiferroic and thermooelectric properties of selected representatives of low bandwidth and intermediate band width manganites. The first candidate, Strontium doped Gd manganite, is prepared by wet solid state reaction method and the second candidate, Na doped La manganite, by citrate gel method. In addition to the above mentioned properties, magneto resistance and dielectric properties are investigated. Using dielectric spectroscopic the dispersion parameters are correlated to the relaxation mechanisms and an attempt is made to obtain the grain and grain boundary contribution to the impedance of the sample through impedance spectroscopy studies.

Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications

In the present studies, various copper delafossite materials viz; CuAlO2, CuGaO2, CuFeO2 , CuGa1-xFexO2, CuYO2 and CuCaxY1-xO2 were synthesised by solid state reaction technique. These copper delafossite materials were grown in thin film form by rf magnetron sputtering technique. In general copper delafossites exhibit good optical transparency. The conductivity of the CuYO2 could be improved by Ca doping or by oxygen intercalation by annealing the film in oxygen atmosphere. It has so far been impossible to improve the p-type conductivity of CuGaO2 significantly by doping Mg or Ca on the Ga site. The ptype conductivity is presumed to be due to oxygen doping or Cu Vacancies [6]. Reports in literature show, oxygen intercalation or divalent ion doping on Ga site is not possible for CuGaO2 thin films to improve the p-type conductivity. Sintered powder and crystals of CuFeO2 have been reported as the materials having the highest p-type conductivity [14, 15] among the copper and silver delafossites. However the CuFeO2 films are found to be less transparent in the visible region compared to CuGaO2. Hence in the present work, the solid solution between the CuGaO2 and CuFeO2 was effected by solid state reaction, varying the Fe content. The CuGa1-xFexO2 with Fe content, x=0.5 shows an increase in conductivity by two orders, compared to CuGaO2 but the transparency is only about 50% in the visible region which is less than that of CuGaO2 The synthesis of α−AgGaO2 was carried out by two step process which involves the synthesis of β-AgGaO2 by ion exchange reaction followed by the hydrothermal conversion of the β-AgGaO2 into α-AgGaO2. The trace amount of Ag has been reduced substantially in the two step synthesis compared to the direct hydrothermal synthesis. Thin films of α-AgGaO2 were prepared on silicon and Al2O3 substrates by pulsed laser deposition. These studies indicate the possibility of using this material as p-type material in thin film form for transparent electronics. The room temperature conductivity of α-AgGaO2 was measured as 3.17 x 10-4 Scm-1and the optical band gap was estimated as 4.12 eV. A transparent p-n junction thin film diode on glass substrate was fabricated using p-type α-AgGaO2 and n-ZnO.AgCoO2 thin films with 50% transparency in the visible region were deposited on single crystalline Al2O3 and amorphous silica substrates by RF magnetron sputtering and p type conductivity of AgCoO2 was demonstrated by fabricating transparent p-n junction diode with AgCoO2 as p-side and ZnO: Al as n-side using sputtering. The junction thus obtained was found to be rectifying with a forward to reverse current of about 10 at an applied voltage of 3 V.The present study shows that silver delafossite thin films with p-type conductivity can be used for the fabrication of active devices for transparent electronics applications.

Amorphous Selenium films using CBD: A Novel Selenisation technique for preparing lndium Selenide and Copper lndium Selenide Thin Films

In the present work, we describe our efforts to develop device quality CuInSe2, films through low cost, simple and eco-friendly hybrid techniques. The most important point to be highlighted here is that the method fully avoids the use of poisonous gases such as H2Se/Se vapour. Instead, selenisation is achieved through solid state reaction between amorphous selenium and polycrystalline metal layers resulting in both binary and ternary selenides. Thin films of amorphous selenium (a-Se) used for this is deposited using Chemical Bath Deposition (CBD). CulnSe2 films are prepared through the selenisation process. Another PV material, indium selenide (In2Se3) thin films are also prepared using this process.

Colossal thermoelectric power in Gd-Sr manganites

Manganites belonging to the series Gd1−xSrxMnO3 (x=0.3, 0.4 and 0.5) were prepared by wet solid-state reaction and their thermoelectric power was evaluated. Thermoelectric power measurements revealed a peak value at ∼40 K. All the samples exhibited a colossal thermopower at ∼40K and in that Gd0.5Sr0.5MnO3 exhibited a maximum value of ∼35mV/K, which is the largest reported for these class of materials at this temperature. Temperaturedependent magnetisation measurements showed that the samples exhibit a phase transition from paramagnetic to spin-glass–like state at these temperatures. Plausible mechanisms responsible for the observed colossal thermoelectric power in Gd-Sr manganites are discussed

On conduction mechanism in paramagnetic phase of Gd based manganites

Materials belonging to the family of manganites are technologically important since they exhibit colossal magneto resistance. A proper understanding of the transport properties is very vital in tailoring the properties. A heavy rare earth doped manganite like Gd0·7Sr0·3MnO3 is purported to be exhibiting unusual properties because of smaller ionic radius of Gd. Gd0·7Sr0·3MnO3 is prepared by a wet solid state reaction method. The conduction mechanism in such a compound has been elucidated by subjecting the material to low temperature d.c. conductivity measurement. It has been found that the low band width material follows a variable range hopping (VRH) model followed by a small polaron hopping (SPH) model. The results are presented here

Synthesis and Photoluminescence Properties of Novel Red Phosphors for White Light Emitting Diode Applications

Several series of Eu3+ based red emitting phosphor materials were synthesized using solid state reaction route and their properties were characterized. The present studies primarily investigated the photoluminescence properties of Eu3+ in a family of closely related host structure with a general formula Ln3MO7. The results presented in the previous chapters throws light to a basic understanding of the structure, phase formation and the photoluminescence properties of these compounds and their co-relations. The variation in the Eu3+ luminescence properties with different M cations was studied in Gd3-xMO7 (M = Nb, Sb, Ta) system.More ordering in the host lattice and more uniform distribution of Eu3+ ions resulting in the increased emission properties were observed in tantalate system.Influence of various lanthanide ion (Lu, Y, Gd, La) substitutions on the Eu3+ photoluminescence properties in Ln3MO7 host structures was also studied. The difference in emission profiles with different Ln ions demonstrated the influence of long range ordering, coordination of cations and ligand polarizability in the emission probabilities, intensity and quantum efficiency of these phosphor materials. Better luminescence of almost equally competing intensities from all the 4f transitions of Eu3+ was noticed for La3TaO7 system. Photoluminescence properties were further improved in La3TaO7 : Eu3+ phosphors by the incorporation of Ba2+ ions in La3+ site. New red phosphor materials Gd2-xGaTaO7 : xEu3+ exhibiting intense red emissions under UV excitation were prepared. Optimum doping level of Eu3+ in these different host lattices were experimentally determined. Some of the prepared samples exhibited higher emission intensities than the standard Y2O3 : Eu3+ red phosphors. In the present studies, Eu3+ acts as a structural probe determining the coordination and symmetry of the atoms in the host lattice. Results from the photoluminescence studies combined with the powder XRD and Raman spectroscopy investigations helped in the determination of the correct crystal structures and phase formation of the prepared compounds. Thus the controversy regarding the space groups of these compounds could be solved to a great extent. The variation in the space groups with different cation substitutions were discussed. There was only limited understanding regarding the various influential parameters of the photoluminescence properties of phosphor materials. From the given studies, the dependence of photoluminescence properties on the crystal structure and ordering of the host lattice, site symmetries, polarizability of the ions, distortions around the activator ion, uniformity in the activator distribution, concentration of the activator ion etc. were explained. Although the presented work does not directly evidence any application, the materials developed in the studies can be used for lighting applications together with other components for LED lighting. All the prepared samples were well excitable under near UV radiation. La3TaO7 : 0.15Eu3+ phosphor with high efficiency and intense orange red emissions can be used as a potential red component for the realization of white light with better color rendering properties. Gd2GaTaO7 : Eu3+, Bi2+ red phosphors give good color purity matching to NTSC standards of red. Some of these compounds exhibited higher emission intensities than the standard Y2O3 : Eu3+ red phosphors. However thermal stability and electrical output using these compounds should be studied further before applications. Based on the studies in the closely related Ln3MO7 structures, some ideas on selecting better host lattice for improved luminescence properties could be drawn. Analyzing the CTB position and the number of emission splits, a general understanding on the doping sites can be obtained. These results could be helpful for phosphor designs in other host systems also, for enhanced emission intensity and efficiency.

Synthesis, characterisation and thermoelectric properties of the oxytelluride Bi2O2Te

Bi2O2Te was synthesised from a stoichiometric mixture of Bi, Bi2O3 and Te by a solid state reaction. Analysis of powder X-ray diffraction data indicates that this material crystallises in the anti-ThCr2Si2 structure type (space group I4/mmm), with lattice parameters a = 3.98025(4) and c = 12.70391(16) Å. The electrical and thermal transport properties of Bi2O2Te were investigated as a function of temperature over the temperature range 300 ≤ T/K ≤ 665. These measurements indicate that Bi2O2Te is an n-type semiconductor, with a band gap of 0.23 eV. The thermal conductivity of Bi2O2Te is remarkably low for a crystalline material, with a value of only 0.91 W m-1 K-1 at room temperature.

Synthesis, characterization and physical properties of the skutterudites YbxFe2Ni2Sb12 (0≤x≤0.4)

The skutterudites YbxFe2Ni2Sb12 (0≤x≤0.4) have been prepared by solid-state reaction and characterised by powder X-ray diffraction. The compounds crystallise in the cubic space group Im View the MathML source3¯ (a≈9.1 Å) with Yb atoms partially filling the voids in the skutterudite framework. A neutron time-of-flight diffraction experiment for Fe2Ni2Sb12 confirms the disorder of Fe and Ni atoms on the transition-metal site. Electrical resistivity, Seebeck coefficient and thermal conductivity measurements indicate that the thermoelectric performance of the skutterudites shows a marked dependence on the Yb content. Magnetic measurements over the temperature range 2≤T/K≤300 show paramagnetic behaviour for all compounds. Decomposition studies under an oxidising atmosphere at elevated temperatures have also been carried out by thermogravimetric analysis.