994 resultados para 290900 Electrical and Electronic Engineering


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The performance of a new pointer-based medium-access control protocol that was designed to significantly improve the energy efficiency of user terminals in quality-of-service-enabled wireless local area networks was analysed. The new protocol, pointer-controlled slot allocation and resynchronisation protocol (PCSARe), is based on the hybrid coordination function-controlled channel access mode of the IEEE 802.11e standard. PCSARe reduces energy consumption by removing the need for power-saving stations to remain awake for channel listening. Discrete event network simulations were performed to compare the performance of PCSARe with the non-automatic power save delivery (APSD) and scheduled-APSD power-saving modes of IEEE 802.11e. The simulation results show a demonstrable improvement in energy efficiency without significant reduction in performance when using PCSARe. For a wireless network consisting of an access point and eight stations in power-saving mode, the energy saving was up to 39% when using PCSARe instead of IEEE 802.11e non-APSD. The results also show that PCSARe offers significantly reduced uplink access delay over IEEE 802.11e non-APSD, while modestly improving the uplink throughput. Furthermore, although both had the same energy consumption, PCSARe gave a 25% reduction in downlink access delay compared with IEEE 802.11e S-APSD.

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This paper considers invariant texture analysis. Texture analysis approaches whose performances are not affected by translation, rotation, affine, and perspective transform are addressed. Existing invariant texture analysis algorithms are carefully studied and classified into three categories: statistical methods, model based methods, and structural methods. The importance of invariant texture analysis is presented first. Each approach is reviewed according to its classification, and its merits and drawbacks are outlined. The focus of possible future work is also suggested.

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Key pre-distribution schemes have been proposed as means to overcome Wireless Sensor Networks constraints such as limited communication and processing power. Two sensor nodes can establish a secure link with some probability based on the information stored in their memories though it is not always possible that two sensor nodes may set up a secure link. In this paper, we propose a new approach that elects trusted common nodes called ”Proxies” which reside on an existing secure path linking two sensor nodes. These sensor nodes are used to send the generated key which will be divided into parts (nuggets) according to the number of elected proxies. Our approach has been assessed against previously developed algorithms and the results show that our algorithm discovers proxies more quickly which are closer to both end nodes, thus producing shorter path lengths. We have also assessed the impact of our algorithm on the average time to establish a secure link when the transmitter and receiver of the sensor nodes are ”ON”. The results show the superiority of our algorithm in this regard. Overall, the proposed algorithm is well suited for Wireless Sensor Networks.

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This paper presents a new method for transmission loss allocation. The method is based on tracing the complex power flow through the network and determining the share of each load on the flow and losses through each line. Transmission losses are taken into consideration during power flow tracing. Unbundling line losses is carried out using an equation, which has a physical basis, and considers the coupling between active and reactive power flows as well as the cross effects of active and reactive power on active and reactive losses. A tracing algorithm which can be considered direct to a good extent, as there is no need for exhaustive search to determine the flow paths as these are determined in a systematic way during the course of tracing. Results of application of the proposed method are also presented.

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A three-phase four-wire shunt active power filter for harmonic mitigation and reactive power compensation in power systems supplying nonlinear loads is presented. Three adaptive linear neurons are used to tackle the desired three-phase filter current templates. Another feedforward three-layer neural network is adopted to control the output filter compensating currents online. This is accomplished by producing the appropriate switching patterns of the converter's legs IGBTs. Adequate tracking of the filter current references is obtained by this method. The active filter injects the current required to compensate for the harmonic and reactive components of the line currents, Simulation results of the proposed active filter indicate a remarkable improvement in the source current waveforms. This is reflected in the enhancement of the unified power quality index defined. Also, the filter has exhibited quite a high dynamic response for step variations in the load current, assuring its potential for real-time applications

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A new universal power quality manager is proposed. The proposal treats a number of power quality problems simultaneously. The universal manager comprises a combined series and shunt three-phase PWM controlled converters sharing a common DC link. A control scheme based on fuzzy logic is introduced and the general features of the design and operation processes are outlined. The performance of two configurations of the proposed power quality manager are compared in terms of a recently formulated unified power quality index. The validity and integrity of the proposed system is proved through computer simulated experiments

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We present a novel method for creating damage-free ferroelectric nanostructures with a focused ion beam milling machine. Using a standard e-beam photoresist followed by a dilute acid wash, nanostructures ranging in size from 1 mu m down to 250 nm were created in a 90 nm thick lead zirconate titanate ( PZT) wafer. Transmission electron microscopy and piezoresponse force microscopy ( PFM) confirmed that the surfaces of the nanostructures remained damage free during fabrication, and showed no gallium implantation, and that there was no degradation of ferroelectric properties. In fact DC strain loops, obtained using PFM, demonstrated that the nanostructures have a higher piezoresponse than unmilled films. As the samples did not have any top hard mask, the method presented is unique as it allows for imaging of the top surface to understand edge effects in well-defined nanostructures. In addition, as no post-mill annealing was necessary, it facilitates investigation of nanoscale domain mechanisms without process-induced artefacts.

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Periodic arrays of nanorings of morphotropic phase boundary lead zirconium titanate ( PZT) have been successfully fabricated using a novel self-assembly technique: close-packed monolayers of latex nanospheres were deposited onto Pt-coated silicon substrates, and then plasma cleaned to form ordered arrays of isolated nanospheres, not in contact with each other. Subsequent pulsed laser deposition of PZT, high angle argon ion etching and thermal annealing created the arrays of isolated nanorings, with diameters of similar to 100 nm and wall thicknesses of similar to 10 nm. Energy dispersive x-ray analysis confirms that the rings are compositionally morphotropic phase boundary PZT, and high resolution transmission electron microscopy imaging of lattice fringes demonstrates some periodicities consistent with perovskite rather than pyrochlore material. The dimensions of these nanorings, and the expected 'soft' behaviour of the ferroelectric material from which they are made, means that they offer the most likely opportunity to date for observing whether or not vortex arrangements of electrical dipoles, analogous to those seen in ferromagnetic nanostructures, actually exist.

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A stencilling technique for depositing arrays of nanoscale ferroelectric capacitors on a surface could be useful in data storage devices.

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A modification of liquid source misted chemical deposition process (LSMCD) with heating mist and substrate has developed, and this enabled to control mist penetrability and fluidity on sidewalls of three-dimensional structures and ensure step coverage. A modified LSMCD process allowed a combinatorial approach of Pb(Zr,Ti)O-3 (PZT) thin films and carbon nanotubes (CNTs) toward ultrahigh integration density of ferroelectric random access memories (FeRAMs). The CNTs templates were survived during the crystallization process of deposited PZT film onto CNTs annealed at 650 degrees C in oxygen ambient due to a matter of minute process, so that the thermal budget is quite small. The modified LSMCD process opens up the possibility to realize the nanoscale capacitor structure of ferroelectric PZT film with CNTs electrodes toward ultrahigh integration density FeRAMs.

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This paper summarises some of the most recent work that has been done on nanoscale ferroelectrics as a result of a joint collaborative research effort involving groups in Queen's University Belfast, the University of Cambridge and the University of St. Andrews. Attempts have been made to observe fundamental effects of reduced size, and increasing morphological complexity, on ferroelectric behaviour by studying the functional response and domain characteristics in nanoscale single crystal material, whose size and morphology have been defined by Focused Ion Beam (FIB) patterning. This approach to nanoshape fabrication has allowed the following broad statements to be made: (i) in single crystal BaTiO3 sheets, permittivity and phase transition behaviour is not altered from that of bulk material down to a thickness of similar to 75 nm; (ii) in single crystal BaTiO3 sheets and nanowires changes in observed domain morphologies are consistent with large scale continuum modeling.

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The focused ion beam microscope (FIB) has been used to fabricate thin parallel-sided ferroelectric capacitors from single crystals of BaTiO3 and SrTiO3. A series of nano-sized capacitors ranging in thickness from similar to660 nm to similar to300 nm were made. Cross-sectional high resolution transmission electron microscopy (HRTEM) revealed that during capacitor fabrication, the FIB rendered around 20 nm of dielectric at the electrode-dielectric interface amorphous, associated with local gallium impregnation. Such a region would act electrically in series with the single crystal and would presumably have a considerable negative influence on the dielectric properties. However, thermal annealing prior to gold electrodes deposition was found to fully recover the single crystal capacitors and homogenise the gallium profile. The dielectric testing of the STO ultra-thin single crystal capacitors was performed yielding a room temperature dielectric constant of similar to300, as is the case in bulk. Therefore, there was no evidence of a collapse in dielectric constant associated with thin film dimensions.

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Pulsed Laser Deposition (PLD) was used to make Au/(Ba0.5Sr0.5)TiO3/(La0.5Sr0.5) CoO3/MgO thin film capacitor structures. Functional properties were studied with changing BST thickness from similar to1265 nm to similar to63 nm. The dielectric constant was found to decrease, and migration of T-m (the temperature at which the dielectric constant is maximum) to lower temperatures occurred as thickness was reduced. Curie-Weiss plots of the as-obtained dielectric data, indicated that the Curie temperature was also systemmatically progressively depressed. Further, fitting to expressions previously used to describe diffuse phase transitions suggested increased diffuseness in transformation behaviour as film thickness decreased. This paper discusses the care needed in interpreting the observations given above. We make particular distinction between the apparent Curie-temperature derived from Curie-Weiss plots of as-measured data, and the inherent Curie temperature determined after correction for the interfacial capacitance. We demonstrate that while the apparent Curie temperature decreases as thickness decreases, the inherent Curie temperature is thickness independent. Thickness-invariant phase transition behaviour is confirmed from analysis of polarisation loops, and from examination of the temperature dependence of the loss-tangent. We particularly note that correction of data for interfacial capacitance does not alter the position of T-m. We must therefore conclude that the position of T-m is not related simply to phase transformation behaviour in BST thin films.