Electrical transport and magnetic properties of Mn3O4-La0.7Ca0.3MnO3 ceramic composites prepared by a one-step spray-drying technique

La0.7Ca0.3MnO3/Mn3O4 composites can be synthesized in one step by thermal treatment of a spray-dried precursor, instead of mixing pre-synthesized powders. Another advantage of this composite system is that a long sintering step can be used without leading to significant modification of the manganite composition. The percolation threshold is reached at ∼20 vol% of manganite phase. The 77 K low field magnetoresistance is enhanced to ∼11% at 0.15 T when the composition is close to the percolation threshold. © 2007 Elsevier Ltd. All rights reserved.

YBa 2Cu 3O 7-δ thick films on Ag prepared by the Electrophoretic Deposition technique

YBa 2Cu 3O 7-δ thick films have been deposited onto Ag substrates by the Electrophoretic Deposition (EPD) technique. Different microstructures and electrical behaviours were observed depending on the starting powder. Coatings prepared from commercial powder displayed significant porosity and the superconducting transition width was found to be magnetic-field dependent. Films produced from home-made coprecipitated powder are denser but contain some secondary phases. No dependence of the resistive transition as a function of magnetic field (H 20 Oe) was observed in that case. © 2006 IOP Publishing Ltd.

Investigation of DyBa2Cu3O7-d superconducting domains grown by the infiltration technique starting with small size Dy-211 particles

An infiltration and growth process is here used as an alternative to the classical top-seeded melt-textured growth process for the production of Dy-123 single-domains with finely dispersed small size Dy-211 particles. The starting materials are the 211-particles and a barium and copper rich liquid phase precursor. The infiltration and growth process allows for controlling both the spatial and size distribution of the 211-particles in the final superconducting 123-single-domain. The main parameters (set-ups, maximum processing temperature with respect to the peritectic temperature, nature of reactant, porosity of the 211-preform) of the infiltration and growth process are discussed. Moreover, different processes of chimie douce are shown in order to produce Dy-211 particles with controlled shape and size, particles that can be used as precursors for the infiltration and growth process. © 2005 IOP Publishing Ltd.

Low-field magnetoresistance in La0.7Ca0.3MnO 3 manganite compounds prepared by the spray drying technique

Calcium-substituted lanthanum manganite compounds were synthesized by the spray drying technique. This method - whose main advantages are versatility, high reproducibility and scalability - yields small grain materials of high homogeneity and displaying low-field magnetoresistance effects. We report about the physical and chemical characterizations of these samples in order to investigate the potential interest of spray drying for the production of materials for low-field magnetoresistance applications. We have studied the dependence of the low-field magnetoresistance on the temperature and duration of the thermal treatment applied to the pelletized powders. The issue of the shape anisotropy (demagnetisation effects) influence on the magnetoresistance properties has also been dealt with. © 2005 Springer Science + Business Media, Inc.

Modeling turn-off voltage rise in SOI LIGBT

The behavior of the drain voltage rise of the Lateral IGBT during inductive turn-off is studied in detail. Numerical simulations show that, if compared with the well known vertical IGBT, the Lateral IGBT presents a differences in the on-state stored charge and in the growth of the depleted region that result in a different drain voltage rise. In this paper a complete model for the voltage rise is devised through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turn-off voltage rise in the Lateral IGBT. © Springer Science + Business Media LLC 2006.

Polychromatic single-shot spectroscopy on SOI-FET trapped electrons

The behavior of trapped electrons, in a dielectric close to the channel of a silicon SOI-FET, is studied by cryogenic microwave spectroscopy. On-resonance microwave excitation causes one of these trapped electrons to undergo spatial Rabi oscillations between widely separated trap sites. This charge displacement causes a change in the drain current of the transistor, resulting in high quality factor resonances in continuous wave spectroscopy. The potential of this effect for non-classical information processing is investigated through polychromatic single-shot spectroscopy, using on-resonance and difference frequencies. Interaction between different trapped electrons is seen in the post excitation behavior and the possibilities of quantum gate operations are discussed. © The Electrochemical Society.

Electrical detection of trapped charge displacements using an ultra-thin SOI percolation transistor

Electrical detection of solid-state charge qubits requires ultrasensitive charge measurement, typically using a quantum point contact or single-electron-transistor, which imposes strict limits on operating temperature, voltage and current. A conventional FET offers relaxed operating conditions, but the back-action of the channel charge is a problem for such small quantum systems. Here, we discuss the use of a percolation transistor as a measurement device, with regard to charge sensing and backaction. The transistor is based on a 10nm thick SOI channel layer and is designed to measure the displacement of trapped charges in a nearby dielectric. At cryogenic temperatures, the trapped charges result in strong disorder in the channel layer, so that current is constrained to a percolation pathway in sub-threshold conditions. A microwave driven spatial Rabi oscillation of the trapped charge causes a change in the percolation pathway, which results in a measurable change in channel current. © The Electrochemical Society.

Graphene SOI CMOS sensors for detection of PPB levels of NO2 in air

There is considerable demand for sensors that are capable of detecting ultra-low concentrations (sub-PPM) of toxic gases in air. Of particular interest are NO2 and CO that are exhaust products of internal combustion engines. Electrochemical (EC) sensors are widely used to detect these gases and offer the advantages of low power, good selectivity and temporal stability. However, EC sensors are large (1 cm3), hand-made and thus expensive ($25). Consequently, they are unsuitable for the low-cost automotive market that demands units for less than $10. One alternative technology is SnO2 or WO3 resistive gas sensors that are fabricated in volume today using screen-printed films on alumina substrates and operate at 400°C. Unfortunately, they suffer from several disadvantages: power consumption is high 200 mW; reproducibility of the sensing element is poor; and cross-sensitivity is high. © 2013 IEEE.

A high temperature and low power SOI CMOS MEMS based thermal conductivity gas sensor

The design, 3D FEM modelling and measurement results of a novel high temperature, low power SOI CMOS MEMS thermal conductivity gas sensor are presented here. The sensor consists of a circular membrane with an embedded tungsten micro-heater. The high sensing capability is based on the temperature sensitivity of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm 2. The circular membrane has a 600 μm diameter while the heating element has a 320 μm diameter. Measurement results show that for a constant power consumption of 75 mW the heater temperature was 562.4°C in air, 565.9°C in N2, 592.5°C for 1 % H2 in Ar and 599.5°C in Ar. © 2013 IEEE.

200V superjunction lateral IGBT fabricated on partial SOI

A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore, the p-pillar contributes to the on-state current. Furthermore, the p-pillar contributes to sweep out holes during the turn-off process, thus leading to faster removal of plasma. To realize this device, one additional mask layer is required in the X-FAB 0.18μm partial SOI HV process. © 2013 IEEE.

A thermopile based SOI CMOS MEMS wall shear stress sensor

In this paper we present for the first time, a novel silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal wall shear stress sensor based on a tungsten hot-film and three thermopiles. These devices have been fabricated using a commercial 1 μm SOI-CMOS process followed by a deep reactive ion etch (DRIE) back-etch step to create silicon oxide membranes under the hot-film for effective thermal isolation. The sensors show an excellent repeatability of electro-thermal characteristics and can be used to measure wall shear stress in both constant current anemometric as well as calorimetric modes. The sensors have been calibrated for wall shear stress measurement of air in the range of 0-0.48 Pa using a suction type, 2-D flow wind tunnel. The calibration results show that the sensors have a higher sensitivity (up to four times) in calorimetric mode compared to anemometric mode for wall shear stress lower than 0.3 Pa. © 2013 IEEE.

Generating Options for Active Risk Control (GO-ARC): introducing a novel technique.

BACKGROUND: After investing significant amounts of time and money in conducting formal risk assessments, such as root cause analysis (RCA) or failure mode and effects analysis (FMEA), healthcare workers are left to their own devices in generating high-quality risk control options. They often experience difficulty in doing so, and tend toward an overreliance on administrative controls (the weakest category in the hierarchy of risk controls). This has important implications for patient safety and the cost effectiveness of risk management operations. This paper describes a before and after pilot study of the Generating Options for Active Risk Control (GO-ARC) technique, a novel tool to improve the quality of the risk control options generation process. OUTCOME MEASURES: The quantity, quality (using the three-tiered hierarchy of risk controls), variety, and novelty of risk controls generated. RESULTS: Use of the GO-ARC technique was associated with improvement on all measures. CONCLUSIONS: While this pilot study has some notable limitations, it appears that the GO-ARC technique improved the risk control options generation process. Further research is needed to confirm this finding. It is also important to note that improved risk control options are a necessary, but not sufficient, step toward the implementation of more robust risk controls.

A fixed-grid b-spline finite element technique for fluid-structure interaction

We present a fixed-grid finite element technique for fluid-structure interaction problems involving incompressible viscous flows and thin structures. The flow equations are discretised with isoparametric b-spline basis functions defined on a logically Cartesian grid. In addition, the previously proposed subdivision-stabilisation technique is used to ensure inf-sup stability. The beam equations are discretised with b-splines and the shell equations with subdivision basis functions, both leading to a rotation-free formulation. The interface conditions between the fluid and the structure are enforced with the Nitsche technique. The resulting coupled system of equations is solved with a Dirichlet-Robin partitioning scheme, and the fluid equations are solved with a pressure-correction method. Auxiliary techniques employed for improving numerical robustness include the level-set based implicit representation of the structure interface on the fluid grid, a cut-cell integration algorithm based on marching tetrahedra and the conservative data transfer between the fluid and structure discretisations. A number of verification and validation examples, primarily motivated by animal locomotion in air or water, demonstrate the robustness and efficiency of our approach. © 2013 John Wiley & Sons, Ltd.