Response of Materials during sliding on various surface textures

In the present investigation, basic studies were conducted using Inclined pin-on-plate sliding Tester to understand the role of surface texture of hard material against soft materials during sliding. Soft materials such as Al-Mg alloy, pure Al and pure Mg were used as pins and 080 M40 steel was used as plate in the tests. Two surface parameters of steel plates — roughness and texture — were varied in tests. It was observed that the transfer layer formation and the coefficient of friction which has two components, namely adhesion and plowing component, are controlled by the surface texture of harder material. For the case of Al-Mg alloy, stick-slip phenomenon was absent under both dry and lubricated conditions. However, for the case of Al, it was observed only under lubricated conditions while for the case of Mg, it was observed under both dry and lubricated conditions. Further, it was observed that the amplitude of stick-slip motion primarily depends on plowing component of friction. The plowing component of friction was highest for the surface that promotes plane strain conditions near the surface and was lowest for the surface that promotes plane stress conditions near the surface.

Response of Materials During Sliding on Various Surface Textures

In the present investigation, soft materials, such as Al-4Mg alloy, high-purity Al and pure Mg pins were slid against hard steel plates of various surface textures to study the response of materials during sliding. The experiments were conducted using an inclined pin-on-plate sliding apparatus under both dry and lubricated conditions in an ambient environment. Two kinds of frictional response, namely steady-state and stick-slip, were observed during sliding. In general, the response was dependent on material pair, normal load, lubrication, and surface texture of the harder material. More specifically, for the case of Al-4Mg alloy, the stick-slip response was absent under both dry and lubricated conditions. For Al, stick-slip was observed only under lubricated conditions. For the case of Mg, the stick-slip response was seen under both dry and lubricated conditions. Further, it was observed that the amplitude of stick-slip motion primarily depends on the plowing component of friction. The plowing component of friction was the highest for the surfaces that promoted plane strain conditions and was the lowest for the surfaces that promoted plane stress conditions near the surface.

Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate

InN quantum dots (QDs) were fabricated on silicon nitride/Si (111) substrate by droplet epitaxy. Single-crystalline structure of InN QDs was verified by transmission electron microscopy, and the chemical bonding configurations of InN QDs were examined by x-ray photoelectron spectroscopy. Photoluminescence measurement shows a slight blue shift compared to the bulk InN, arising from size dependent quantum confinement effect. The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of InN QDs were studied in a metal-semiconductor-metal configuration in the temperature range of 80-300K. The I-V characteristics of lateral grown InN QDs were explained by using the trap model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651762]

Evaluation of the reactivity of titanium with mould materials during casting

A methodology for evaluating the reactivity of titanium with mould materials during casting has been developed. Microhardness profiles and analysis of oxygen contamination have provided an index for evaluation of the reactivity of titanium. Microhardness profile delineates two distinct regions, one of which is characterised by a low value of hardness which is invariant with distance. The reaction products are uniformly distributed in the metal in this region. The second is characterised by a sharp decrease in microhardness with distance from the metal-mould interface. It represents a diffusion zone for solutes that dissolve into titanium from the mould. The qualitative profiles for contaminants determined by scanning electron probe microanalyser and secondary ion mass spectroscopy in the as-cast titanium were found to be similar to that of microhardness, implying that microhardness can be considered as an index of the contamination resulting from metal-mould reaction.

Effect of gate-drain/source overlap on the noise in 90 nm N-channel metal oxide semiconductor field effect transistors

In this paper, we have studied the effect of gate-drain/source overlap (LOV) on the drain channel noise and induced gate current noise (SIg) in 90 nm N-channel metal oxide semiconductor field effect transistors using process and device simulations. As the change in overlap affects the gate tunneling leakage current, its effect on shot noise component of SIg has been taken into consideration. It has been shown that “control over LOV” allows us to get better noise performance from the device, i.e., it allows us to reduce noise figure, for a given leakage current constraint. LOV in the range of 0–10 nm is recommended for the 90 nm gate length transistors, in order to get the best performance in radio frequency applications.

Simple theoretical analysis of the Fowler-Nordheim field emission from microstructures and quantum wires of optoelectronic materials

We present a simplified theoretical formulation of the Fowler-Nordheim field emission (FNFE) under magnetic quantization and also in quantum wires of optoelectronic materials on the basis of a newly formulated electron dispersion law in the presence of strong electric field within the framework of k.p formalism taking InAs, InSb, GaAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x) As(y)P(1-y) lattice matched to InP as examples. The FNFE exhibits oscillations with inverse quantizing magnetic field and electron concentration due to SdH effect and increases with increasing electric field. For quantum wires the FNFE increases with increasing film thickness due to the existence van-Hove singularity and the magnitude of the quantum jumps are not of same height indicating the signature of the band structure of the material concerned. The appearance of the humps of the respective curves is due to the redistribution of the electrons among the quantized energy levels when the quantum numbers corresponding to the highest occupied level changes from one fixed value to the others. Although the field current varies in various manners with all the variables in all the limiting cases as evident from all the curves, the rates of variations are totally band-structure dependent. Under certain limiting conditions, all the results as derived in this paper get transformed in to well known Fowler-Nordheim formula. (C) 2011 Elsevier Ltd. All rights reserved.

Materials, Processing, and Testing of Flexible Image Sensor Arrays

Editors' note:Flexible, large-area display and sensor arrays are finding growing applications in multimedia and future smart homes. This article first analyzes and compares current flexible devices, then discusses the implementation, requirements, and testing of flexible sensor arrays.—Jiun-Lang Huang (National Taiwan University) and Kwang-Ting (Tim) Cheng (University of California, Santa Barbara)