Fuzzy Expert Approach with Curtailed Controllers for Improved Reactive Power Dispatch

This paper addresses the problem of curtailing the number of control actions using fuzzy expert approach for voltage/reactive power dispatch. It presents an approach using fuzzy set theory for reactive power control with the purpose of improving the voltage profile of a power system. To minimize the voltage deviations from pre-desired values of all the load buses, using the sensitivities with respect to reactive power control variables form the basis of the proposed Fuzzy Logic Control (FLC). Control variables considered are switchable VAR compensators, On Load Tap Changing (OLTC) transformers and generator excitations. Voltage deviations and controlling variables are translated into fuzzy set notations to formulate the relation between voltage deviations and controlling ability of controlling devices. The developed fuzzy system is tested on a few simulated practical Indian power systems and modified IEEE-30 bus system. The performance of the fuzzy system is compared with conventional optimization technique and results obtained are encouraging. Results obtained for a modified IEEE-30 bus test system and a 205-node equivalent EHV system a part of Indian southern grid are presented for illustration purposes. The proposed fuzzy-expert technique is found suitable for on-line applications in energy control centre as the solution is obtained fast with significant speedups with few number of controllers.

Identification of fault location in power distribution system with distributed generation using support vector machines

This paper presents a multi-class support vector machine (SVMs) approach for locating and diagnosing faults in electric power distribution feeders with the penetration of Distributed Generations (DGs). The proposed approach is based on the three phase voltage and current measurements which are available at all the sources i.e. substation and at the connection points of DG. To illustrate the proposed methodology, a practical distribution feeder emanating from 132/11kV-grid substation in India with loads and suitable number of DGs at different locations is considered. To show the effectiveness of the proposed methodology, practical situations in distribution systems (DS) such as all types of faults with a wide range of varying fault locations, source short circuit (SSC) levels and fault impedances are considered for studies. The proposed fault location scheme is capable of accurately identify the fault type, location of faulted feeder section and the fault impedance. The results demonstrate the feasibility of applying the proposed method in practical in smart grid distribution automation (DA) for fault diagnosis.

Optimum design of 1.4KV trench IGBTs - The next generation of high power switching devices

The Trench Insulated Gate Bipolar Transistor (IGBT) is the most promising structure for the next generation of power semiconductor devices with wide applications ranging from motor control (1-4 kV) to HVDC (6.5 kV). Here we present for the first time an optimum design of a 1.4kV Trench IGBT using a new, fully integrated optimisation system comprising process and device simulators and the RSM optimiser. The use of this new TCAD system has contributed largely to realizing devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4kV Trench IGBTs which are in excellent agreement with the TCAD predictions are reported.

High power short pulse generation at high repetition rate from InGaN violet laser diodes

The generation of 22 ps pulses with peak powers of 0.74 W by a gain-switched InGaN violet laser diode is reported. Significant pulse width dependence on repetition rate is observed. © 2011 OSA.

High-power and picosecond pulse generation from a passively Q-switched tapered InGaAs/GaAs laser

Tapered waveguides have been used for enhancing pulse powers in Q-switched AlGaAs and InGaAsP lasers. This paper reports on passively Q-switched pulses with 1.53 W peak power and 41-ps FWHM from an InGaAs/GasAs (970 nm) double-contact tapered semiconductor laser in a well defined single-lobed far-field.